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    Adjustable dual frequency voltage dividing plasma reactor
    1.
    发明申请
    Adjustable dual frequency voltage dividing plasma reactor 有权
    可调双频分压等离子体反应堆

    公开(公告)号：US20030037881A1

    公开(公告)日：2003-02-27

    申请号：US09931324

    申请日：2001-08-16

    Applicant: Applied Materials, Inc.

    Inventor： Michael S. Barnes ,  John Holland ,  Alexander Paterson ,  Valentin Todorov ,  Farhad Moghadam

    IPC: H01L021/302 ,  C23F001/00 ,  C23C016/00

    CPC classification number: H01J37/3244 ,  H01J37/32082

    Abstract: Apparatus and method for processing a substrate are provided. The apparatus for processing a substrate comprises: a chamber having a first electrode; a substrate support disposed in the chamber and providing a second electrode; a high frequency power source electrically connected to either the first or the second electrode; a low frequency power source electrically connected to either the first or the second electrode; and a variable impedance element connected to one or more of the electrodes. The variable impedance element may be tuned to control a self bias voltage division between the first electrode and the second electrode. Embodiments of the invention substantially reduce erosion of the electrodes, maintain process uniformity, improve precision of the etch process for forming high aspect ratio sub-quarter-micron interconnect features, and provide an increased etch rate which reduces time and costs of production of integrated circuits.

    Abstract translation: 提供了用于处理基板的设备和方法。 用于处理衬底的设备包括：具有第一电极的腔室; 设置在所述室中并提供第二电极的衬底支撑件; 电连接到第一或第二电极的高频电源; 电连接到第一或第二电极的低频电源; 以及连接到一个或多个电极的可变阻抗元件。 可调谐可变阻抗元件以控制第一电极和第二电极之间的自偏压分压。 本发明的实施例大大减少电极的侵蚀，保持工艺均匀性，提高用于形成高纵横比亚微米互连特征的蚀刻工艺的精度，并提供增加的蚀刻速率，从而减少集成电路的生产时间和成本 。

    Plasma processes for depositing low dielectric constant films
    4.
    发明申请
    Plasma processes for depositing low dielectric constant films 有权
    用于沉积低介电常数膜的等离子体工艺

    公开(公告)号：US20020045361A1

    公开(公告)日：2002-04-18

    申请号：US09957551

    申请日：2001-09-19

    Applicant: Applied Materials, Inc.

    Inventor： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

    IPC: B32B009/00 ,  H01L021/4763 ,  H01L021/31 ,  H01L021/469

    CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L2221/1031 ,  Y10T428/31663

    Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2nullSiHnullOnullSiHnull(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.

    Abstract translation: 一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和设备或从约20W至约500W的脉冲RF功率水平。 在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。 氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。 氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜是通过甲基硅烷，CH3SiH3，二甲基硅烷，（CH3）2SiH2或1,1,3,3-四甲基 - 二硅氧烷，（CH3）2-SiH-O-SiH-（CH3）2， 和一氧化二氮，N2O，在约10W至约150W的恒定RF功率水平下，或在占空比的10％至30％期间的约20W至约250W的脉冲RF功率水平。

    Plasma processes for depositing low dielectric constant films
    6.
    发明申请
    Plasma processes for depositing low dielectric constant films 有权
    用于沉积低介电常数膜的等离子体工艺

    公开(公告)号：US20040038545A1

    公开(公告)日：2004-02-26

    申请号：US10648616

    申请日：2003-08-26

    Applicant: Applied Materials, Inc.

    Inventor： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

    IPC: H01L021/302 ,  H01L021/461

    CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L2221/1031 ,  Y10T428/31663

    Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2nullSiHnullOnullSiHnull(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10% to 30% of the duty cycle.

    Abstract translation: 一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和装置或约20W至约500W的脉冲RF功率水平。 在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。 氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。 氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜是通过甲基硅烷，CH3SiH3，二甲基硅烷，（CH3）2SiH2或1,1,3,3-四甲基 - 二硅氧烷，（CH3）2-SiH-O-SiH-（CH3）2， 和一氧化二氮，N2O，在约10W至约150W的恒定RF功率水平，或占空比的10％至30％期间的约20W至约250W的脉冲RF功率水平。

    Apparatus and method for heating substrates
    7.
    发明申请
    Apparatus and method for heating substrates 失效
    用于加热基材的装置和方法

    公开(公告)号：US20030138560A1

    公开(公告)日：2003-07-24

    申请号：US10278615

    申请日：2002-10-22

    Applicant: Applied Materials, Inc.

    Inventor： Jun Zhao ,  David Quach ,  Timothy Weidman ,  Rick J. Roberts ,  Farhad Moghadam ,  Dan Maydan

    IPC: B05D005/12 ,  C23C016/00 ,  B05D003/02

    CPC classification number: H01L21/67109 ,  Y10S414/139

    Abstract: An apparatus for processing substrates is disclosed. In one embodiment, the apparatus includes a housing and a plurality of stacked cell structures in the housing. An actuator is adapted to move the plurality of stacked cell structures inside of the housing while substrates in the stacked cell structures are being heated.

    Abstract translation: 公开了一种处理衬底的设备。 在一个实施例中，该装置包括外壳和壳体中的多个堆叠的电池结构。 致动器适于在堆叠的电池结构中的衬底被加热的同时将多个堆叠的电池结构移动到壳体内部。

    Apparatus for improving barrier layer adhesion to HDP-FSG thin films
    8.
    发明申请
    Apparatus for improving barrier layer adhesion to HDP-FSG thin films 失效
    用于改善与HDP-FSG薄膜的屏障层粘附性的装置

    公开(公告)号：US20020150682A1

    公开(公告)日：2002-10-17

    申请号：US10120713

    申请日：2002-04-10

    Applicant: Applied Materials, Inc.

    Inventor： Hichem M'Saad ,  Dana Tribula ,  Manoj Vellaikal ,  Farhad Moghadam ,  Sameer Desai

    IPC: C23C016/00 ,  C23C008/00 ,  C23C010/10 ,  C23C016/24 ,  C23C016/08

    CPC classification number: H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31629

    Abstract: A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.

    Abstract translation: 在HDP-CVD系统中形成对氮化硅具有良好粘附性的镶嵌FSG膜的方法。 使用硅烷（SiH 4），四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体。 SiH4，SiF4和O2反应形成FSG。 引入Ar来促进气体分解。 所有四种气体都用于沉积大部分FSG膜。 在沉积FSG膜的界面部分期间不使用SiH4。 如果要将FSG沉积在氮化硅的顶部，则FSG膜的界面部分指的是最高部分，如果氮化硅沉积在FSG或底部的顶部。 SiF4与SiF4的共同作用倾向于减少SiF4在大部分沉积过程中的破坏作用。 通过从FSG膜的界面部分的沉积中除去SiH 4，在界面区域中较少的氢被引入到膜中，并且改善了覆盖或下面的氮化硅的粘合性。

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