公开(公告)号：US20220076915A1

公开(公告)日：2022-03-10

申请号：US17015545

申请日：2020-09-09

Applicant: Applied Materials, Inc.

Inventor： Venkataramana R. Chavva ,  KyuHa Shim ,  Hans Gossmann ,  Edwin Arevalo ,  Scott Falk ,  Rajesh Prasad

IPC: H01J37/20 ,  H01L21/265 ,  H01L21/225 ,  H01J37/317

Abstract: A system and method that allows higher energy implants to be performed, wherein the peak concentration depth is shallower than would otherwise occur is disclosed. The system comprises an ion source, an accelerator, a platen and a platen orientation motor that allows large tilt angles. The system may be capable of performing implants of hydrogen ions at an implant energy of up to 5 MeV. By tilting the workpiece during an implant, the system can be used to perform implants that are typically performed at implant energies that are less than the minimum implant energy allowed by the system. Additionally, the resistivity profile of the workpiece after thermal treatment is similar to that achieved using a lower energy implant. In certain embodiments, the peak concentration depth may be reduced by 3 μm or more using larger tilt angles.

公开(公告)号：US12112949B2

公开(公告)日：2024-10-08

申请号：US17963059

申请日：2022-10-10

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Sarah Bobek ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee ,  Harry Whitesell ,  Hidetaka Oshio ,  Dong Hyung Lee ,  Deven Matthew Raj Mittal ,  Scott Falk ,  Venkataramana R. Chavva

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3115

CPC classification number: H01L21/0338 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31122 ,  H01L21/31155

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

公开(公告)号：US20230369050A1

公开(公告)日：2023-11-16

申请号：US18013675

申请日：2020-08-21

Applicant: Applied Materials, Inc.

Inventor： Qintao Zhang ,  Rajesh Prasad ,  Jun-Feng Lu

IPC: H01L21/265 ,  H01L21/311

CPC classification number: H01L21/265 ,  H01L21/31116

Abstract: A method of forming a semiconductor device may include forming a plurality of fins extending from a buried oxide layer, wherein a masking layer is disposed atop each of the plurality of fins, and performing a high-temperature ion implant to the semiconductor device. The method may further include performing an etch process to remove the masking layer from atop each of the plurality of fins, wherein the etch process does not remove the buried oxide layer.

公开(公告)号：US11756796B2

公开(公告)日：2023-09-12

申请号：US17318843

申请日：2021-05-12

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Martin Seamons ,  Shan Tang ,  Qi Gao ,  Deven Raj Mittal ,  Kyuha Shim

IPC: H01L21/02 ,  H01L21/3115 ,  H01L21/311

CPC classification number: H01L21/31155 ,  H01L21/0234 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02321 ,  H01L21/31116

Abstract: A method may include providing a substrate having, on a first surface of the substrate, a low dielectric constant layer characterized by a layer thickness. The method may include heating the substrate to a substrate temperature in a range of 200° C. to 550° C.; and directing an ion implant treatment to the low dielectric constant layer, while the substrate temperature is in the range of 200° C. to 550° C. As such, the ion implant treatment may include implanting a low weight ion species, at an ion energy generating an implant depth equal to 40% to 175% of the layer thickness.

公开(公告)号：US20220262619A1

公开(公告)日：2022-08-18

申请号：US17667704

申请日：2022-02-09

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Shuaidl Zhang ,  Mihaela A. Balseanu ,  Qi Gao ,  Rajesh Prasad ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Deven Matthew Raj Mittal ,  Kyu-Ha Shim

IPC: H01L21/02

Abstract: Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800 ° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 Å/min.

公开(公告)号：US20250037989A1

公开(公告)日：2025-01-30

申请号：US18907769

申请日：2024-10-07

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Shuaidi Zhang ,  Mihaela A. Balseanu ,  Qi Gao ,  Rajesh Prasad ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Deven Matthew Raj Mittal ,  Kyu-Ha Shim

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/56 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 Å/min.

公开(公告)号：US12142475B2

公开(公告)日：2024-11-12

申请号：US17667704

申请日：2022-02-09

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Shuaidi Zhang ,  Mihaela A. Balseanu ,  Qi Gao ,  Rajesh Prasad ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Deven Matthew Raj Mittal ,  Kyu-Ha Shim

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/56 ,  H10B41/27 ,  H10B41/35 ,  H10B43/35 ,  H10B43/27

Abstract: Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800 ° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 Å/min.

公开(公告)号：US20240332009A1

公开(公告)日：2024-10-03

申请号：US18616689

申请日：2024-03-26

Applicant: Applied Materials, Inc.

Inventor： Qixin Shen ,  Chuanxi Yang ,  Hang Yu ,  Deenesh Padhi ,  Prashanthi Para ,  Miguel S. Fung ,  Rajesh Prasad ,  Fenglin Wang ,  Shan Tang ,  Kyu-Ha Shim

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02321 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/67213

Abstract: Exemplary methods of semiconductor processing may include forming a layer of silicon nitride on a semiconductor substrate. The layer of silicon nitride may be characterized by a first roughness. The methods may include performing a post-deposition treatment on the layer of silicon nitride. The methods may include reducing a roughness of the layer of silicon nitride such that the layer of silicon nitride may be characterized by a second roughness less than the first roughness.

公开(公告)号：US12014927B2

公开(公告)日：2024-06-18

申请号：US17963841

申请日：2022-10-11

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Sarah Bobek ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee ,  Harry Whitesell ,  Hidetaka Oshio ,  Dong Hyung Lee ,  Deven Matthew Raj Mittal ,  Scott Falk ,  Venkataramana R. Chavva

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3115

CPC classification number: H01L21/0338 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31122 ,  H01L21/31155

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

公开(公告)号：US11469107B2

公开(公告)日：2022-10-11

申请号：US16939316

申请日：2020-07-27

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Sarah Bobek ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee ,  Harry Whitesell ,  Hidetaka Oshio ,  Dong Hyung Lee ,  Deven Matthew Raj Mittal ,  Scott Falk ,  Venkataramana R. Chavva

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3115

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.