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公开(公告)号：US11692261B2
公开(公告)日：2023-07-04
申请号：US16923600
申请日：2020-07-08
Applicant: Applied Materials, Inc.
Inventor： Alexander N. Lerner , Roey Shaviv , Satish Radhakrishnan
IPC: C23C14/24 , C23C14/04 , C23C14/50 , C23C16/455
CPC classification number: C23C14/24 , C23C14/042 , C23C14/505 , C23C16/45565
Abstract: One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, process chamber is provided that includes a lid plate having a plurality of cooling channels formed therein, a pedestal, the pedestal having a plurality of cooling channels formed therein, and a showerhead, wherein the showerhead comprises a plurality of segments and each segment is at least partially surrounded by a shield.
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公开(公告)号：US20230121513A1
公开(公告)日：2023-04-20
申请号：US18068469
申请日：2022-12-19
Applicant: APPLIED MATERIALS, INC.
Inventor： Kartik B. Shah , Satish Radhakrishnan , Karthik Ramanathan , Karthikeyan Balaraman , Adolph Miller Allen , Xinyuan Chong , Mitrabhanu Sahu , Wenjing Xu , Michael Sterling Jackson , Weize Hu , Feng Chen
Abstract: Process recipe data associated a process to be performed for a substrate at a process chamber is provided as input to a trained machine learning model. A set of process recipe settings for the process that minimizes scratching on one or more surfaces of the substrate is determined based on one or more outputs of the machine learning model. The process is performed for the substrate at the process chamber in accordance with the determined set of process recipe settings.
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公开(公告)号：US11505863B2
公开(公告)日：2022-11-22
申请号：US16854893
申请日：2020-04-21
Applicant: Applied Materials, Inc.
Inventor： Alexander N. Lerner , Roey Shaviv , Prashanth Kothnur , Satish Radhakrishnan , Xiaozhou Che
IPC: C23C16/448 , C23C16/458 , C23C16/455 , C23C16/52 , C23C14/00 , C23C16/00
Abstract: Methods and systems for forming films on substrates in semiconductor processes are disclosed. The method includes providing different materials each contained in separate ampoules. Material is flowed from each ampoule into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.
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公开(公告)号：US20220122822A1
公开(公告)日：2022-04-21
申请号：US17076639
申请日：2020-10-21
Applicant: Applied Materials, Inc.
Inventor： Venkata Sharat Chandra Parimi , Satish Radhakrishnan , Diwakar Kedlaya , Fang Ruan , Amit Bansal
Abstract: Semiconductor processing systems according to embodiments of the present technology may include a chamber body having sidewalls and a base. The chamber body may define an internal volume. The systems may include a substrate support assembly having a shaft and a platen coupled with the shaft along a first surface of the platen. The semiconductor processing systems may include a cover plate positioned on the platen of the substrate support assembly along a second surface of the platen opposite the first surface. The cover plate may include a flange extending about an exterior region of the cover plate. The flange may be in direct contact with the platen. The cover plate may include an upper wall vertically offset from the flange. An interior volume may be defined between the upper wall and the platen of the substrate support assembly.
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公开(公告)号：US12062567B2
公开(公告)日：2024-08-13
申请号：US16844764
申请日：2020-04-09
Applicant: Applied Materials, Inc.
Inventor： Zubin Huang , Rui Cheng , Diwakar Kedlaya , Satish Radhakrishnan , Anton V. Baryshnikov , Venkatanarayana Shankaramurthy , Karthik Janakiraman , Paul L. Brillhart , Badri N. Ramamurthi
IPC: H01L21/683 , H01J37/32 , H01L21/67
CPC classification number: H01L21/6838 , H01J37/32724 , H01L21/67017 , H01L21/67167 , H01L21/67253 , H01J2237/186 , H01J2237/24585
Abstract: Exemplary methods of semiconductor processing may include coupling a fluid conduit within a substrate support in a semiconductor processing chamber to a system foreline. The coupling may vacuum chuck a substrate with the substrate support. The methods may include flowing a gas into the fluid conduit. The methods may include maintaining a pressure between the substrate and the substrate support at a pressure higher than the pressure at the system foreline.
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Patent Agency Ranking
公开(公告)号：US11830706B2
公开(公告)日：2023-11-28
申请号：US16703140
申请日：2019-12-04
Applicant: Applied Materials, Inc.
Inventor： Venkata Sharat Chandra Parimi , Zubin Huang , Jian Li , Satish Radhakrishnan , Rui Cheng , Diwakar N. Kedlaya , Juan Carlos Rocha-Alvarez , Umesh M. Kelkar , Karthik Janakiraman , Sarah Michelle Bobek , Prashant Kumar Kulshreshtha , Vinay K. Prabhakar , Byung Seok Kwon
CPC classification number: H01J37/32724 , C23C16/4583 , C23C16/4586 , C23C16/46 , C23C16/50 , H01J37/32715 , H01L21/67103 , H05B3/10 , H05B3/143 , H01J2237/2007 , H01J2237/3321
Abstract: Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.
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公开(公告)号：US20230294116A1
公开(公告)日：2023-09-21
申请号：US17699971
申请日：2022-03-21
Applicant: Applied Materials, Inc.
Inventor： Prahallad Iyengar , Dhritiman Subha Kashyap , Parth Swaroop , Satish Radhakrishnan
Abstract: Dual channel showerhead assemblies are described. In some embodiments, the dual channel showerhead assemblies, which include a showerhead upper plate and a showerhead lower plate, enable delivery of mutually incompatible precursors along separate channels that mix in the process zone above a wafer. The dual channel showerhead assemblies provide at least two separate gas paths. In some embodiments, the hole design and hole distribution are configured for minimal jetting effect and plenum volumes for fast purging. The dual channel showerhead assemblies described herein may have a reduced purge out time compared to single channel showerheads, spiral dual channel showerheads, and bonded dual channel showerheads.
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公开(公告)号：US11515129B2
公开(公告)日：2022-11-29
申请号：US16701986
申请日：2019-12-03
Applicant: Applied Materials, Inc.
Inventor： Elizabeth Neville , Satish Radhakrishnan , Kartik Shah , Vinay Prabhakar , Venkata Sharat Chandra Parimi , Sungwon Ha
IPC: H01J37/32 , H01L21/67 , H01L21/687
Abstract: An example semiconductor processing system may include a chamber body having sidewalls and a base. The processing system may also include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate, and a shaft coupled with the support platen. The processing system may further include a plate coupled with the shaft of the substrate support. The plate may have an emissivity greater than 0.5. In some embodiments, the plate may include a radiation shied disposed proximate the support platen. In some embodiments, the plate may include a pumping plate disposed proximate the base of the chamber body. In some embodiments, the emissivity of the plate may range between about 0.5 and about 0.95.
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公开(公告)号：US11834743B2
公开(公告)日：2023-12-05
申请号：US16570317
申请日：2019-09-13
Applicant: APPLIED MATERIALS, INC.
Inventor： Alexander Lerner , Prashanth Kothnur , Roey Shaviv , Satish Radhakrishnan
IPC: C23C16/455
CPC classification number: C23C16/45565 , C23C16/4557 , C23C16/45525 , C23C16/45574
Abstract: Apparatus for supplying vaporized reactants to a reaction chamber are described herein. In some embodiments, a showerhead assembly for depositing multiple materials on a substrate includes a plurality of gas delivery portions, each gas delivery portion having an inlet, a wedge shaped body that defines a plenum, and a plurality of openings disposed on a bottom surface of the gas delivery portion, wherein each of the plenums are fluidly isolated from each other.
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公开(公告)号：US20230356354A1
公开(公告)日：2023-11-09
申请号：US17735655
申请日：2022-05-03
Applicant: Applied Materials, Inc.
Inventor： Jeonghoon Oh , Andrew Nagengast , Steven M. Zuniga , Eric L. Lau , Hari Prasath Rajendran , Satish Radhakrishnan , Kuen-Hsiang Chen , Ekaterina A. Mikhaylichenko
CPC classification number: B24B37/32 , B24B37/042
Abstract: Exemplary carrier heads for a chemical mechanical polishing apparatus may include a carrier body. The carrier heads may include a substrate mounting surface coupled with the carrier body. The carrier heads may include an inner ring that is sized and shaped to circumferentially surround a peripheral edge of a substrate positioned against the substrate mounting surface. The inner ring may be characterized by a first end having a first surface that faces the carrier body and a second end having a second surface opposite the first surface. The second end of the inner ring may be radially displaceable. The carrier heads may include an outer ring having an inner surface that is disposed against an outer surface of the inner ring.
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