公开(公告)号：US10899945B2

公开(公告)日：2021-01-26

申请号：US15751612

申请日：2016-08-09

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza M. Golzarian ,  Te Yu Wei ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

公开(公告)号：US10214663B2

公开(公告)日：2019-02-26

申请号：US15502932

申请日：2015-07-24

Applicant: BASF SE

Inventor： Yongqing Lan ,  Bastian Marten Noller ,  Yuzhuo Li ,  Liang Jiang ,  Daniel Kwo-Hung Shen ,  Reza Golzarian

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321

Abstract: Described are a chemical-mechanical polishing (CMP) composition comprising abrasive particles in the form of organic/inorganic composite particles as well as the use of said composite particles as abrasive particles in a CMP composition and processes for the manufacture of a semiconductor device comprising chemical mechanical polishing of a substrate in the presence said CMP composition.

公开(公告)号：US11993729B2

公开(公告)日：2024-05-28

申请号：US16765665

申请日：2018-11-12

Applicant: BASF SE

Inventor： Christian Daeschlein ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza M Golzarian ,  Te Yu Wei ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) composition comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.

公开(公告)号：US10738219B2

公开(公告)日：2020-08-11

申请号：US15538313

申请日：2015-12-16

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza M Golzarian ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: H01L21/321 ,  H01L21/306 ,  H01L21/304 ,  H01L21/302 ,  C09K3/14 ,  C09G1/04 ,  C09G1/02 ,  C09G1/00 ,  C09D7/63 ,  C09D5/00 ,  C09D133/08 ,  C08K5/5435 ,  B24B37/04

Abstract: Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and/or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a substituted tetrazole derivative of the general formula (I), wherein R1 is H, hydroxy, alkyl, aryl, alkylaryl, amino, carboxyl, alkylcarboxyl, thio or alkylthio. (C) at least one amino acid (D) at least one oxidizer, (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US11286402B2

公开(公告)日：2022-03-29

申请号：US15538334

申请日：2015-12-11

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza Golzarian ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  C09K13/00 ,  H01L21/461 ,  C09G1/04

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a triazine derivative of the general formula (I) wherein R1, R2, R3, R4, R5 and R6 are independently from each other H, methyl, ethyl, propyl, butyl, pentyl, C2-C10-alkylcarboxylic acid, hydroxymethyl, vinyl or allyl (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US10227506B2

公开(公告)日：2019-03-12

申请号：US15536447

申请日：2015-12-04

Applicant: BASF SE

Inventor： Max Siebert ,  Michael Lauter ,  Yongqing Lan ,  Robert Reichardt ,  Alexandra Muench ,  Manuel Six ,  Gerald Daniel ,  Bastian Marten Noller ,  Kevin Huang ,  Sheik Ansar Usman Ibrahim

IPC: C09G1/04 ,  C09G1/02 ,  C09K13/00 ,  H01L21/304 ,  H01L21/461

Abstract: Disclosed herein is a chemical mechanical polishing (CMP) composition (Q) containing (A) inorganic particles, (B) a compound of general formula (I) below, and (C) an aqueous medium, in which the composition (Q) has a pH of from 2 to 6.

公开(公告)号：US09862862B2

公开(公告)日：2018-01-09

申请号：US14891175

申请日：2014-05-05

Applicant: BASF SE

Inventor： Yongqing Lan ,  Peter Przybylski ,  Zhenyu Bao ,  Julian Proelss

IPC: C09G1/02 ,  H01L21/306 ,  C09K3/14 ,  H01L21/02

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30612 ,  H01L21/30625

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more polyethylene imines (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

公开(公告)号：US09828527B2

公开(公告)日：2017-11-28

申请号：US15336245

申请日：2016-10-27

Applicant: BASF SE

Inventor： Yongqing Lan ,  Peter Przybylski ,  Zhenyu Bao ,  Julian Proelss

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/30625

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

公开(公告)号：US20170044402A1

公开(公告)日：2017-02-16

申请号：US15336245

申请日：2016-10-27

Applicant: BASF SE

Inventor： Yongqing Lan ,  Peter Przybylski ,  Zhenyu Bao ,  Julian Proelss

IPC: C09G1/02 ,  H01L21/306 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/30625

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components:(A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6(B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid(C) water(D) optionally one or more further constituents,wherein the pH of the composition is in the range of from 2 to 6.

Abstract translation: 其中所述组合物的pH在2至6的范围内。

公开(公告)号：US11264250B2

公开(公告)日：2022-03-01

申请号：US16094381

申请日：2016-04-27

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza M Golzarian ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  H01L21/321 ,  C09K3/14

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) an anionic surfactant of the general formula (I) R-S wherein R is C5-C20-alkyl, C5-C20-alkenyl, C5-C20-alkylacyl or C5-C20-alkenylacyl and S is a sulfonic acid derivative, an amino acid derivative or a phosphoric acid derivative or salts or mixtures thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.