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14 条记录 (耗时 0.02 秒)

    Addition of D2 to H2 to Detect and Calibrate Atomic Hydrogen Formed By Dissociative Electron attachment
    1.
    发明申请
    Addition of D2 to H2 to Detect and Calibrate Atomic Hydrogen Formed By Dissociative Electron attachment 审中-公开
    添加D2至H2以检测和校准通过分离电子附着形成的原子氢

    公开(公告)号：US20090008426A1

    公开(公告)日：2009-01-08

    申请号：US12233678

    申请日：2008-09-19

    申请人： Chun Christine Dong ,  Eugene Joseph Karwacki, JR. ,  Richard E. Patrick

    发明人： Chun Christine Dong ,  Eugene Joseph Karwacki, JR. ,  Richard E. Patrick

    IPC分类号： B23K37/00

    CPC分类号： B23K1/206 ,  H01L2924/0002 ,  H05K3/3489 ,  H01L2924/00

    摘要： A method of detecting and calibrating dry fluxing metal surfaces of one or more components to be soldered by electron attachment using a gas mixture of reducing gas comprising hydrogen and deuterium, comprising the steps of: a) providing one or more components to be soldered which are connected to a first electrode as a target assembly; b) providing a second electrode adjacent the target assembly; c) providing a gas mixture comprising a reducing gas comprising hydrogen and deuterium between the first and second electrodes; d) providing a direct current (DC) voltage to the first and second electrodes to form an emission current between the electrodes and donating electrons to the reducing gas to form negatively charged ionic reducing gas and molecules of hydrogen bonded to deuterium; e) contacting the target assembly with the negatively charged ionic reducing gas and reducing oxides on the target assembly. Related apparatus is also disclosed.

    摘要翻译： 一种通过使用包括氢和氘的还原气体的气体混合物通过电子附着来检测和校准要焊接的一种或多种组分的干熔剂金属表面的方法，包括以下步骤：a）提供一种或多种待焊接的组分， 连接到作为目标组件的第一电极; b）提供邻近目标组件的第二电极; c）在所述第一和第二电极之间提供包含包含氢和氘的还原气体的气体混合物; d）向所述第一和第二电极提供直流（DC）电压以在所述电极之间形成发射电流并且将电子供给到所述还原气体以形成带负电荷的离子还原气体和键合到氘的氢分子; e）使目标组件与负电荷的离子还原气体和目标组件上的还原氧化物接触。 还公开了相关装置。

    Selective Etching and Formation of Xenon Difluoride
    2.
    发明申请
    Selective Etching and Formation of Xenon Difluoride 有权
    氙氟化物的选择性蚀刻和形成

    公开(公告)号：US20100022095A1

    公开(公告)日：2010-01-28

    申请号：US12360588

    申请日：2009-01-27

    申请人： Dingjun Wu ,  Eugene Joseph Karwacki, JR. ,  Anupama Mallikarjunan ,  Andrew David Johnson

    发明人： Dingjun Wu ,  Eugene Joseph Karwacki, JR. ,  Anupama Mallikarjunan ,  Andrew David Johnson

    IPC分类号： H01L21/3065 ,  H01L21/302 ,  H01L21/306 ,  C01B23/00

    CPC分类号： B08B7/0035 ,  C23C16/4405 ,  C23F4/00 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67028

    摘要： This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.

    摘要翻译： 本发明涉及从二氧化硅，硅，硅，钼，钨，钨，钛，锆，铪，钒，钽，铌，硼，磷，锗，砷及其混合物中选择性地去除材料的方法 氮化物，镍，铝，TiNi合金，光致抗蚀剂，磷硅酸盐玻璃，硼磷硅酸盐玻璃，聚酰亚胺，金，铜，铂，铬，氧化铝，碳化硅及其混合物。 该过程涉及用于半导体沉积室和半导体工具，微机电系统（MEMS）中的器件和离子注入系统的清洁或蚀刻工艺中的重要应用。 还提供了通过使Xe与含氟化合物反应形成XeF 2的方法，其中含氟化学物质选自由F2，NF3，C2F6，CF4，C3F8，SF6组成的组，含有从上游等离子体产生的F原子的等离子体 发电机及其混合物。