High efficiency group III nitride LED with lenticular surface
    4.
    发明授权
    High efficiency group III nitride LED with lenticular surface 有权
    高效率III族氮化物LED带透镜表面

    公开(公告)号:US08878209B2

    公开(公告)日:2014-11-04

    申请号:US14183955

    申请日:2014-02-19

    Applicant: Cree, Inc.

    CPC classification number: H01L33/007 H01L33/22 H01L33/44

    Abstract: A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a Group III nitride-based light emitting region including a plurality of Group III nitride-based layers. A lenticular surface directly contacts one of the Group III nitride-based layers of the light emitting region. The lenticular surface includes a transparent material that is different from the Group III nitride-based layer of the light emitting region that the lenticular surface directly contacts.

    Abstract translation: 公开了一种高效率III族氮化物发光二极管。 二极管包括包含多个III族氮化物基层的III族氮化物基发光区域。 透镜表面直接接触发光区域的III族氮化物基层之一。 透镜表面包括与透镜面直接接触的发光区域的III族氮化物基层不同的透明材料。

    HIGH EFFICIENCY GROUP III NITRIDE LED WITH LENTICULAR SURFACE
    5.
    发明申请
    HIGH EFFICIENCY GROUP III NITRIDE LED WITH LENTICULAR SURFACE 有权
    高效率III类氮化物LED与光泽表面

    公开(公告)号:US20140167089A1

    公开(公告)日:2014-06-19

    申请号:US14183955

    申请日:2014-02-19

    Applicant: Cree, Inc.

    CPC classification number: H01L33/007 H01L33/22 H01L33/44

    Abstract: A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a Group III nitride-based light emitting region including a plurality of Group III nitride-based layers. A lenticular surface directly contacts one of the Group III nitride-based layers of the light emitting region. The lenticular surface includes a transparent material that is different from the Group III nitride-based layer of the light emitting region that the lenticular surface directly contacts.

    Abstract translation: 公开了一种高效率III族氮化物发光二极管。 二极管包括包含多个III族氮化物基层的III族氮化物基发光区域。 透镜表面直接接触发光区域的III族氮化物基层之一。 透镜表面包括与透镜面直接接触的发光区域的III族氮化物基层不同的透明材料。

    SEMICONDUCTOR LIGHT EMITTING APPARATUS INCLUDING BULB AND SCREW-TYPE BASE
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING APPARATUS INCLUDING BULB AND SCREW-TYPE BASE 审中-公开
    半导体发光装置,包括大型和螺旋型基座

    公开(公告)号:US20130107522A1

    公开(公告)日:2013-05-02

    申请号:US13720193

    申请日:2012-12-19

    Applicant: Cree, Inc.

    Abstract: A semiconductor light emitting apparatus includes an elongated hollow wavelength conversion tube that includes an elongated wavelength conversion tube wall having wavelength conversion material, such as phosphor, dispersed therein. A semiconductor light emitting device is oriented to emit light inside the elongated hollow wavelength conversion tube to impinge upon the elongated wavelength conversion tube wall and the wavelength conversion material dispersed therein. The elongated hollow wavelength conversion tube may have an open end, a crimped end, a reflective end, and/or other configurations. Multiples tubes and/or multiple semiconductor light emitting devices may also be used in various configurations. Related assembling methods are also described.

    Abstract translation: 半导体发光装置包括细长的中空波长转换管,其包括分散在其中的波长转换材料(例如磷光体)的细长波长转换管壁。 半导体发光器件被定向以在细长的中空波长转换管内发光,以照射到分散在其中的细长波长转换管壁和波长转换材料。 细长的中空波长转换管可以具有开口端,压接端,反射端和/或其它构造。 多个管和/或多个半导体发光器件也可以以各种配置使用。 还描述了相关的组装方法。

Patent Agency Ranking