公开(公告)号：US11346008B2

公开(公告)日：2022-05-31

申请号：US16692834

申请日：2019-11-22

Applicant: ENTEGRIS, INC.

Inventor： Steven Lippy ,  Emanuel I. Cooper

IPC: C23F1/40 ,  C23F1/30 ,  C23F1/38 ,  C23F1/34 ,  C09K13/04 ,  C09K13/02

Abstract: The invention provides compositions useful for selectively etching ruthenium and/or copper. The compositions comprise certain periodate compounds, alkylammonium or alkylphosphonium hydroxides, carbonate or bicarbonate buffers, and water, wherein the pH of the composition is about 9 to about 12.5. The compositions of the invention are effectively utilized in the method of the invention and have been found to be capable of etching Cu and Ru at similar rates, i.e., >20 Å/min, while minimizing etch rates of dielectrics (

公开(公告)号：US10138117B2

公开(公告)日：2018-11-27

申请号：US14908888

申请日：2014-07-31

Applicant: Entegris, Inc.

Inventor： Li-Min Chen ,  Steven Lippy ,  Daniela White ,  Emanuel I. Cooper

IPC: B81C1/00 ,  C09K13/08 ,  G03F7/40 ,  H01L21/3213 ,  C09K13/10 ,  H01L21/02 ,  H01L21/311

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions are low pH and contain at least one oxidizing agent and at least one etchant as well as corrosion inhibitors to minimize metal erosion and passivating agents to protect dielectric materials.

公开(公告)号：US11476158B2

公开(公告)日：2022-10-18

申请号：US15510732

申请日：2015-09-03

Applicant: Entegris, Inc.

Inventor： Philip S. H. Chen ,  William Hunks ,  Steven Lippy ,  Ruben Remco Lieten

IPC: C23C16/02 ,  H01L21/768 ,  H01L21/285 ,  H01L21/02 ,  C23C16/56 ,  C23C16/04 ,  C23C16/18 ,  H01L21/3213 ,  C23C16/06 ,  C23C16/455 ,  H01L23/532 ,  H01L21/311

Abstract: A process for forming cobalt on a substrate, comprising: volatilizing a cobalt precursor of the disclosure, to form, a precursor vapor: and contacting the precursor vapor with the substrate under vapor deposition conditions effective for depositing cobalt on the substrate from the precursor vapor, wherein the vapor deposition conditions include temperature not exceeding 200° C., wherein: the substrate includes copper surface and dielectric material, e.g., ultra-low dielectric material. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms a capping layer, encapsulating layer, electrode, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel, display, or solar panel. A cleaning composition containing base and oxidizing agent components may be employed to clean the copper prior to deposition of cobalt thereon, to achieve substantially reduced defects in the deposited cobalt.

公开(公告)号：US10460954B2

公开(公告)日：2019-10-29

申请号：US15316358

申请日：2015-06-02

Applicant: ENTEGRIS, INC.

Inventor： Emanuel I. Cooper ,  Steven Lippy ,  Lingyan Song

IPC: C23F1/10 ,  H01L21/311 ,  C23F1/26 ,  H01L21/02 ,  C09K13/08 ,  C09K13/10 ,  C11D7/08 ,  C11D7/14 ,  C11D7/22 ,  C11D7/26 ,  C11D7/28 ,  C11D7/32 ,  C11D7/34 ,  C11D7/36 ,  C11D7/50 ,  C11D11/00 ,  H01L21/027

Abstract: A liquid removal composition and process for removing anti-reflective coating (ARC) material and/or post-etch residue from a substrate having same thereon. The composition achieves at least partial removal of ARC material and/or post-etch residue in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric and nitride-containing materials employed in the semiconductor architecture.

公开(公告)号：US11978622B2

公开(公告)日：2024-05-07

申请号：US15324588

申请日：2015-06-24

Applicant: Entegris, Inc.

Inventor： Lingyan Song ,  Steven Lippy ,  Emanuel I. Cooper

IPC: H01L21/02 ,  B08B3/08 ,  C11D1/00 ,  C11D1/66 ,  C11D3/04 ,  C11D3/24 ,  C11D3/30 ,  C11D3/36 ,  C11D3/37 ,  C11D3/43 ,  C11D7/08 ,  C11D7/10 ,  C11D7/28 ,  C11D11/00

CPC classification number: H01L21/02068 ,  B08B3/08 ,  C11D1/008 ,  C11D1/667 ,  C11D3/042 ,  C11D3/046 ,  C11D3/245 ,  C11D3/30 ,  C11D3/361 ,  C11D3/3707 ,  C11D3/43 ,  C11D7/08 ,  C11D7/10 ,  C11D7/28 ,  C11D11/0047 ,  H01L21/02063

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

公开(公告)号：US10472567B2

公开(公告)日：2019-11-12

申请号：US14772652

申请日：2014-03-04

Applicant: Entegris, Inc.

Inventor： Li-Min Chen ,  Emanuel I. Cooper ,  Steven Lippy ,  Lingyan Song ,  Chia-Jung Hsu ,  Sheng-Hung Tu ,  Chieh Ju Wang

IPC: C09K13/00 ,  H01L21/3213 ,  C23F1/14 ,  C23F1/26 ,  C23G1/02 ,  C09K13/08 ,  C09K13/10 ,  G03F7/42

Abstract: Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.

公开(公告)号：US10428271B2

公开(公告)日：2019-10-01

申请号：US14914418

申请日：2014-08-28

Applicant: Entegris, Inc.

Inventor： Emanuel I. Cooper ,  Li-Min Chen ,  Steven Lippy ,  Chia-Jung Hsu ,  Sheng-hung Tu ,  Chieh Ju Wang

IPC: C09K13/00 ,  C09K13/06 ,  H01L21/311 ,  H01L21/3213

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant, one etchant, and one activator to enhance the etch rate of titanium nitride.

公开(公告)号：US10392560B2

公开(公告)日：2019-08-27

申请号：US15407850

申请日：2017-01-17

Applicant: ENTEGRIS, INC.

Inventor： Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Li-Min Chen ,  Steven Lippy ,  Rekha Rajaram ,  Sheng-Hung Tu

IPC: C09K13/10 ,  H01L21/3213 ,  C09K13/00 ,  C09K13/06 ,  C09K13/08 ,  C23F1/02 ,  C23F1/30 ,  C23F1/40 ,  H01L21/02 ,  C11D11/00 ,  C11D7/02 ,  C11D7/08 ,  C11D7/32 ,  H01L21/311

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

公开(公告)号：US20180130706A1

公开(公告)日：2018-05-10

申请号：US15510732

申请日：2015-09-03

Applicant: Entegris, inc.

Inventor： Philip S.H. Chen ,  William Hunks ,  Steven Lippy ,  Ruben Remco Lieten

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285 ,  C23C16/02 ,  C23C16/56 ,  C23C16/455 ,  C23C16/06 ,  H01L21/02

CPC classification number: H01L21/76879 ,  C23C16/02 ,  C23C16/0227 ,  C23C16/04 ,  C23C16/06 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45559 ,  C23C16/56 ,  H01L21/02063 ,  H01L21/28562 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/76814 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/53238 ,  H01L23/53266

Abstract: A process for forming cobalt on a substrate, comprising: volatilizing a cobalt precursor of the disclosure, to form, a precursor vapor: and contacting the precursor vapor with the substrate under vapor deposition conditions effective for depositing cobalt on the substrate from the precursor vapor, wherein the vapor deposition conditions include temperature not exceeding 200° C., wherein: the substrate includes copper surface and dielectric material, e.g., ultra-low dielectric material. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms a capping layer, encapsulating layer, electrode, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel, display, or solar panel. A cleaning composition containing base and oxidizing agent components may be employed to clean the copper prior to deposition of cobalt thereon, to achieve substantially reduced defects in the deposited cobalt.