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54 条记录 (耗时 0.023 秒)

    Orientation filtering for crystalline films
    1.
    发明授权
    Orientation filtering for crystalline films 失效
    晶体膜的取向过滤

    公开(公告)号：US4632723A

    公开(公告)日：1986-12-30

    申请号：US481096

    申请日：1983-03-31

    申请人： Henry I. Smith ,  Harry A. Atwater ,  Carl V. Thompson ,  Michael W. Geis

    发明人： Henry I. Smith ,  Harry A. Atwater ,  Carl V. Thompson ,  Michael W. Geis

    IPC分类号： C30B13/34 ,  C30B13/06

    CPC分类号： C30B13/34 ,  Y10S117/913 ,  Y10S117/918

    摘要： A substrate is coated with a film to be recrystallized. A pattern of crystallization barriers is created in the film, for example, by etching voids in the film. An encapsulation layer is generally applied to protect the film, fill the voids and otherwise enhance a recrystallization process. Recrystallization is carried out such that certain orientations pass preferentially through the barrier, generally as a result of growth-velocity anisotropy. The result is a film of a specific predetermined crystallographic orientation, a range of orientations or a set of discrete orientations.

    摘要翻译： 将基材涂覆以重结晶的膜。 在膜中产生结晶阻挡层的图案，例如通过蚀刻膜中的空隙。 通常应用包封层以保护膜，填充空隙，否则增强再结晶过程。 进行重结晶，使得某些取向通常优先通过势垒，通常由于生长速度各向异性。 结果是具有特定的预定晶体取向，取向范围或一组离散取向的薄膜。

    Product made by method of entraining dislocations and other crystalline defects
    4.
    发明授权
    Product made by method of entraining dislocations and other crystalline defects 失效
    通过夹带位错和其他结晶缺陷的方法制成的产品

    公开(公告)号：US4562106A

    公开(公告)日：1985-12-31

    申请号：US617311

    申请日：1984-06-04

    申请人： Michael W. Geis ,  Henry I. Smith

    发明人： Michael W. Geis ,  Henry I. Smith

    IPC分类号： C30B13/00 ,  C30B13/28 ,  C30B27/00 ,  B32B33/00

    CPC分类号： C30B27/00 ,  C30B13/00 ,  C30B13/28 ,  C30B29/60 ,  Y10S148/06 ,  Y10T428/24802

    摘要： A substrate, such as a film of thermally grown silicon dioxide on a silicon wafer is coated with a thin film of polycrystalline or amorphous silicon in the thickness range 0.05-10.mu. deposited by chemical vapor deposition. An encapsulation layer that is a composite of 2 .mu.m thickness SiO.sub.2, 30 nm of Si.sub.3 N.sub.4 is deposited on the thin film. A pattern of stripes is created on this encapsulation layer made of materials, such as titanium, silicon, silicon dioxide and photoresist. A long and narrow molten zone is created in the film with its long axis oriented perpendicular to the lines and is moved with a movable strip-heater over in a direction parallel to the lines in the recrystallization process to establish dislocation and crystalline defects in the film entrained to follow the pattern of the stripes at locations related to the stripes.

    摘要翻译： 诸如硅晶片上的热生长二氧化硅的薄膜的衬底涂覆有通过化学气相沉积沉积的厚度范围为0.05-10μm的多晶或非晶硅薄膜。 作为2μm厚的SiO 2，30nm的Si 3 N 4的复合体的封装层沉积在薄膜上。 在由诸如钛，硅，二氧化硅和光致抗蚀剂的材料制成的该封装层上形成条纹图案。 在膜中产生长而窄的熔融区，其长轴垂直于线，并且在可再循环过程中与可行的带状加热器在平行于线的方向上移动，以在膜中形成位错和晶体缺陷 夹带在与条纹相关的位置跟随条纹图案。

    Method of entraining dislocations and other crystalline defects in heated film contacting patterned region
    6.
    发明授权
    Method of entraining dislocations and other crystalline defects in heated film contacting patterned region 失效
    加热膜接触图案区域夹带位错和其他晶体缺陷的方法

    公开(公告)号：US4479846A

    公开(公告)日：1984-10-30

    申请号：US391130

    申请日：1982-06-23

    申请人： Henry I. Smith ,  Michael W. Geis

    发明人： Henry I. Smith ,  Michael W. Geis

    IPC分类号： C30B13/00 ,  C30B13/28 ,  C30B27/00 ,  H01L21/20 ,  C30B13/06

    CPC分类号： H01L21/2022 ,  C30B13/00 ,  C30B13/28 ,  C30B27/00 ,  C30B29/60 ,  Y10S117/913 ,  Y10S148/123 ,  Y10S148/152

    摘要： A process for entraining dislocations and other crystalline defects in a thin film includes coating a substrate, such as a layer of thermally grown silicon dioxide on a silicon wafer with the thin film of polycrystalline or amorphous silicon in the thickness range 0.05-10.mu. deposited by chemical vapor deposition. An encapsulation layer that is a composite of 2 .mu.m thickness SiO.sub.2, 30 nm of Si.sub.3 N.sub.4 is deposited on the thin film. A pattern of stripes is created on this encapsulation layer made of materials, such as titanium, silicon, silicon dioxide and photoresist. A long and narrow molten zone is created in the film with its long axis oriented perpendicular to the lines and is moved with a movable strip-heater over in a direction parallel to the lines in the recrystallization process to establish the dislocation and other crystalline defects in the film entrained to follow the pattern of stripes at locations related to the stripes.

    摘要翻译： 夹杂在薄膜中的位错和其它结晶缺陷的方法包括在硅晶片上涂覆基底，例如多晶硅或非晶硅薄膜，厚度范围为0.05-10微米的硅片上的一层热生长二氧化硅 化学气相沉积。 作为2μm厚的SiO 2，30nm的Si 3 N 4的复合体的封装层沉积在薄膜上。 在由诸如钛，硅，二氧化硅和光致抗蚀剂的材料制成的该封装层上形成条纹图案。 在薄膜中产生长而窄的熔融区，其长轴垂直于线，并且在可再循环过程中与可行的带状加热器在平行于线的方向上移动，以建立位错和其它结晶缺陷 电影夹带着跟踪条纹相关的条纹。

    Maskless lithography using a multiplexed array of fresnel zone plates
    8.
    发明授权
    Maskless lithography using a multiplexed array of fresnel zone plates 无效
    使用菲涅耳带片复用阵列的无掩模光刻

    公开(公告)号：US5900637A

    公开(公告)日：1999-05-04

    申请号：US866550

    申请日：1997-05-30

    申请人： Henry I. Smith

    发明人： Henry I. Smith

    IPC分类号： G03F7/20 ,  H01J37/317

    CPC分类号： G03F7/70383 ,  G03F7/70291 ,  G03F7/704

    摘要： An array of Fresnel zone plates is illuminated by parallel beamlets of narrow-band electromagnetic radiation. The individual zone plates focus a significant fraction of the incident radiation to foci on a substrate located at least several micrometers distant. The beamlets are capable of being individually turned on or off by shutters, or by deflecting small mirrors that would otherwise direct a beamlet to its Fresnel zone plate. Pattern generation is accomplished by moving the substrate while multiplexing the individual beamlets on or off.

    摘要翻译： 菲涅尔区域阵列由窄带电磁辐射的平行子束照射。 单个区域板将入射辐射的大部分聚焦在位于至少几微米远的基底上。 小梁能够通过百叶窗单独打开或关闭，或者通过偏转否则将小射束引导到其菲涅尔区域板的小反射镜。 通过移动衬底，同时复用各个子束来进行图案生成。

    X-ray lithography masking
    9.
    发明授权
    X-ray lithography masking 失效
    X射线光刻掩模

    公开(公告)号：US5809103A

    公开(公告)日：1998-09-15

    申请号：US770678

    申请日：1996-12-20

    申请人： Henry I. Smith ,  Michael Lim ,  James Carter ,  Mark Schattenburg

    发明人： Henry I. Smith ,  Michael Lim ,  James Carter ,  Mark Schattenburg

    IPC分类号： G03F1/22 ,  G03F1/62 ,  G03F1/64 ,  G21K1/10 ,  G21K5/00

    CPC分类号： G03F1/22 ,  G03F1/62 ,  G03F1/64 ,  G21K1/10

    摘要： X-ray masking apparatus includes a frame having a supporting rim surrounding an x-ray transparent region, a thin membrane of hard inorganic x-ray transparent material attached at its periphery to the supporting rim covering the x-ray transparent region and a layer of x-ray opaque material on the thin membrane inside the x-ray transparent region arranged in a pattern to selectively transmit x-ray energy entering the x-ray transparent region through the membrane to a predetermined image plane separated from the layer by the thin membrane. A method of making the masking apparatus includes depositing back and front layers of hard inorganic x-ray transparent material on front and back surfaces of a substrate, depositing back and front layers of reinforcing material on the back and front layers, respectively, of the hard inorganic x-ray transparent material, removing the material including at least a portion of the substrate and the back layers of an inside region adjacent to the front layer of hard inorganic x-ray transparent material, removing a portion of the front layer of reinforcing material opposite the inside region to expose the surface of the front layer of hard inorganic x-ray transparent material separated from the inside region by the latter front layer, and depositing a layer of x-ray opaque material on the surface of the latter front layer adjacent to the inside region.

    摘要翻译： X射线掩蔽装置包括具有围绕x射线透明区域的支撑边缘的框架，在其外围附着到覆盖x射线透明区域的支撑边缘的硬质无机x射线透明材料薄膜和一层 x射线不透明材料在x射线透明区域内的薄膜上，以图案方式布置，以选择性地将通过膜进入x射线透明区域的x射线能量传递到由薄膜与层隔开的预定图像平面 。 一种制造掩模装置的方法包括在基片的前表面和后表面上沉积硬的无机x射线透明材料的背层和前层，分别在硬背面和前层上沉积后层和前层的增强材料 无机x射线透明材料，去除包括基材的至少一部分的材料和与硬无机x射线透明材料的前层相邻的内部区域的背层，去除增强材料的前层的一部分 与内部区域相对，以暴露由后者前层从内部区域分离的硬质无机x射线透明材料的前层的表面，并且在相邻的前面层的表面上沉积一层x射线不透明材料 到内部区域。

    Spatial period division exposing
    10.
    发明授权
    Spatial period division exposing 失效
    空间分裂暴露

    公开(公告)号：US4360586A

    公开(公告)日：1982-11-23

    申请号：US140150

    申请日：1980-04-14

    申请人： Dale C. Flanders ,  Henry I. Smith

    发明人： Dale C. Flanders ,  Henry I. Smith

    IPC分类号： G02B5/18 ,  G03F7/20 ,  B05D3/06 ,  G03F9/00

    CPC分类号： G03F7/70325 ,  G02B5/1857 ,  G03F7/2039

    摘要： Soft carbon-K X-rays (38) expose a PMMA photoresist (31) on an oxide layer (32) of a silicon substrate (33) through a parent mask (30) separated a distance S from the resist by a spacer (34) with the parent mask slits (12, 17) defining a spatial period p to establish an intensity pattern of period p/n at the photomask with S=p.sup.2 /n.lambda., where .lambda. is the wavelength of the incident radiation and .lambda.

    摘要翻译： 软碳-K X射线（38）通过母屏蔽（30）在硅衬底（33）的氧化物层（32）上暴露PMMA光致抗蚀剂（31），所述母掩模（30）通过间隔物（34）与光刻胶隔开距离S ），其中母掩模狭缝（12,17）限定空间周期p以在S = p2 /nλ的光掩模处建立周期p / n的强度图案，其中λ是入射辐射的波长，λ