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33 条记录 (耗时 0.021 秒)

    Method of entraining dislocations and other crystalline defects in heated film contacting patterned region
    3.
    发明授权
    Method of entraining dislocations and other crystalline defects in heated film contacting patterned region 失效
    加热膜接触图案区域夹带位错和其他晶体缺陷的方法

    公开(公告)号：US4479846A

    公开(公告)日：1984-10-30

    申请号：US391130

    申请日：1982-06-23

    申请人： Henry I. Smith ,  Michael W. Geis

    发明人： Henry I. Smith ,  Michael W. Geis

    IPC分类号： C30B13/00 ,  C30B13/28 ,  C30B27/00 ,  H01L21/20 ,  C30B13/06

    CPC分类号： H01L21/2022 ,  C30B13/00 ,  C30B13/28 ,  C30B27/00 ,  C30B29/60 ,  Y10S117/913 ,  Y10S148/123 ,  Y10S148/152

    摘要： A process for entraining dislocations and other crystalline defects in a thin film includes coating a substrate, such as a layer of thermally grown silicon dioxide on a silicon wafer with the thin film of polycrystalline or amorphous silicon in the thickness range 0.05-10.mu. deposited by chemical vapor deposition. An encapsulation layer that is a composite of 2 .mu.m thickness SiO.sub.2, 30 nm of Si.sub.3 N.sub.4 is deposited on the thin film. A pattern of stripes is created on this encapsulation layer made of materials, such as titanium, silicon, silicon dioxide and photoresist. A long and narrow molten zone is created in the film with its long axis oriented perpendicular to the lines and is moved with a movable strip-heater over in a direction parallel to the lines in the recrystallization process to establish the dislocation and other crystalline defects in the film entrained to follow the pattern of stripes at locations related to the stripes.

    摘要翻译： 夹杂在薄膜中的位错和其它结晶缺陷的方法包括在硅晶片上涂覆基底，例如多晶硅或非晶硅薄膜，厚度范围为0.05-10微米的硅片上的一层热生长二氧化硅 化学气相沉积。 作为2μm厚的SiO 2，30nm的Si 3 N 4的复合体的封装层沉积在薄膜上。 在由诸如钛，硅，二氧化硅和光致抗蚀剂的材料制成的该封装层上形成条纹图案。 在薄膜中产生长而窄的熔融区，其长轴垂直于线，并且在可再循环过程中与可行的带状加热器在平行于线的方向上移动，以建立位错和其它结晶缺陷 电影夹带着跟踪条纹相关的条纹。

    Product made by method of entraining dislocations and other crystalline defects
    5.
    发明授权
    Product made by method of entraining dislocations and other crystalline defects 失效
    通过夹带位错和其他结晶缺陷的方法制成的产品

    公开(公告)号：US4562106A

    公开(公告)日：1985-12-31

    申请号：US617311

    申请日：1984-06-04

    申请人： Michael W. Geis ,  Henry I. Smith

    发明人： Michael W. Geis ,  Henry I. Smith

    IPC分类号： C30B13/00 ,  C30B13/28 ,  C30B27/00 ,  B32B33/00

    CPC分类号： C30B27/00 ,  C30B13/00 ,  C30B13/28 ,  C30B29/60 ,  Y10S148/06 ,  Y10T428/24802

    摘要： A substrate, such as a film of thermally grown silicon dioxide on a silicon wafer is coated with a thin film of polycrystalline or amorphous silicon in the thickness range 0.05-10.mu. deposited by chemical vapor deposition. An encapsulation layer that is a composite of 2 .mu.m thickness SiO.sub.2, 30 nm of Si.sub.3 N.sub.4 is deposited on the thin film. A pattern of stripes is created on this encapsulation layer made of materials, such as titanium, silicon, silicon dioxide and photoresist. A long and narrow molten zone is created in the film with its long axis oriented perpendicular to the lines and is moved with a movable strip-heater over in a direction parallel to the lines in the recrystallization process to establish dislocation and crystalline defects in the film entrained to follow the pattern of the stripes at locations related to the stripes.

    摘要翻译： 诸如硅晶片上的热生长二氧化硅的薄膜的衬底涂覆有通过化学气相沉积沉积的厚度范围为0.05-10μm的多晶或非晶硅薄膜。 作为2μm厚的SiO 2，30nm的Si 3 N 4的复合体的封装层沉积在薄膜上。 在由诸如钛，硅，二氧化硅和光致抗蚀剂的材料制成的该封装层上形成条纹图案。 在膜中产生长而窄的熔融区，其长轴垂直于线，并且在可再循环过程中与可行的带状加热器在平行于线的方向上移动，以在膜中形成位错和晶体缺陷 夹带在与条纹相关的位置跟随条纹图案。

    Orientation filtering for crystalline films
    6.
    发明授权
    Orientation filtering for crystalline films 失效
    晶体膜的取向过滤

    公开(公告)号：US4632723A

    公开(公告)日：1986-12-30

    申请号：US481096

    申请日：1983-03-31

    申请人： Henry I. Smith ,  Harry A. Atwater ,  Carl V. Thompson ,  Michael W. Geis

    发明人： Henry I. Smith ,  Harry A. Atwater ,  Carl V. Thompson ,  Michael W. Geis

    IPC分类号： C30B13/34 ,  C30B13/06

    CPC分类号： C30B13/34 ,  Y10S117/913 ,  Y10S117/918

    摘要： A substrate is coated with a film to be recrystallized. A pattern of crystallization barriers is created in the film, for example, by etching voids in the film. An encapsulation layer is generally applied to protect the film, fill the voids and otherwise enhance a recrystallization process. Recrystallization is carried out such that certain orientations pass preferentially through the barrier, generally as a result of growth-velocity anisotropy. The result is a film of a specific predetermined crystallographic orientation, a range of orientations or a set of discrete orientations.

    摘要翻译： 将基材涂覆以重结晶的膜。 在膜中产生结晶阻挡层的图案，例如通过蚀刻膜中的空隙。 通常应用包封层以保护膜，填充空隙，否则增强再结晶过程。 进行重结晶，使得某些取向通常优先通过势垒，通常由于生长速度各向异性。 结果是具有特定的预定晶体取向，取向范围或一组离散取向的薄膜。

    Ionic liquid-channel charge-coupled device
    8.
    发明授权
    Ionic liquid-channel charge-coupled device 失效

    公开(公告)号：US5582701A

    公开(公告)日：1996-12-10

    申请号：US360260

    申请日：1994-12-20

    申请人： Michael W. Geis ,  Stephanie A. Gajar ,  Nancy Geis

    发明人： Michael W. Geis ,  Stephanie A. Gajar ,  Nancy Geis

    IPC分类号： B03C5/02 ,  G01N27/447 ,  B01D57/02 ,  G01N27/26

    CPC分类号： G01N27/44752 ,  B03C5/026 ,  B03C5/028 ,  Y10S257/912

    摘要： An ionic liquid-channel charge-coupled device that separates ions in a liquid sample according to ion mobility characteristics includes a channel having an inner wall that has a matrix liquid disposed within. An insulating material surrounds the channel, and an introduction element introduces a liquid sample into the channel. The sample is preferably a liquid solution that has at least one ionic specie present in the solution. The device further includes a gating element that establishes at least one charge packet in the channel in response to an externally applied input signal, and a transport element that induces the charge packet to migrate through the channel. The gate element can be a plurality of spaced-apart, electrically conductive, gate structures that are alternately disposable between a high voltage state and a low voltage state. The transport element further includes an application element that applies a variable voltage to the gating element. This application of voltage induces the charge packets to form under the gate structures and, when the voltage applied to an adjacent gate has a higher potential, induces the packet to migrate through the channel in that direction.

    Surface-emission cathodes having cantilevered electrodes
    9.
    发明授权
    Surface-emission cathodes having cantilevered electrodes 失效
    具有悬臂电极的表面发射阴极

    公开(公告)号：US07443090B2

    公开(公告)日：2008-10-28

    申请号：US11237637

    申请日：2005-09-28

    申请人： Michael W. Geis ,  Theodore H. Fedynyshyn ,  Sandra J. Deneault ,  Keith E. Krohn ,  Theodore M. Lyszczarz ,  Michael F. Marchant

    发明人： Michael W. Geis ,  Theodore H. Fedynyshyn ,  Sandra J. Deneault ,  Keith E. Krohn ,  Theodore M. Lyszczarz ,  Michael F. Marchant

    IPC分类号： H01J1/00

    CPC分类号： H01J1/304 ,  H01J1/32

    摘要： A surface-emission cathode formed on an insulating surface having cantilevered, i.e. “undercut,” electrodes. Suitable insulating surfaces include negative electron affinity (NEA) insulators such as glass or diamond. The cathode can operate in a comprised vacuum (e.g., 10−7 Torr) with no bias on the electrodes and low vacuum electric fields (e.g., at least 10 V cm−1). Embodiments of the present invention are inexpensive to fabricate, requiring lithographic resolution of approximately 10 micrometers. These cathodes can be formed over large areas for use in lighting and displays and are suitable for satellite applications, such as cathodes for tethers, thrusters and space-charging neutralizers.

    摘要翻译： 形成在具有悬臂的绝缘表面上的表面发射阴极，即“底切”电极。 合适的绝缘表面包括负电子亲和力（NEA）绝缘体，如玻璃或金刚石。 阴极可以在电极和低真空电场（例如，至少10V cm -1 -1以上）没有偏压的情况下在包含的真空（例如，10 -7托）中操作 >）。 本发明的实施例制造成本低廉，需要约10微米的光刻分辨率。 这些阴极可以形成在用于照明和显示器的大面积上，并且适用于卫星应用，例如系绳阴极，推进器和空间充电中和剂。