公开(公告)号：US08294245B2

公开(公告)日：2012-10-23

申请号：US12797617

申请日：2010-06-10

申请人： Hideaki Nakahata ,  Shinsuke Fujiwara ,  Takashi Sakurada ,  Yoshiyuki Yamamoto ,  Seiji Nakahata ,  Tomoki Uemura

发明人： Hideaki Nakahata ,  Shinsuke Fujiwara ,  Takashi Sakurada ,  Yoshiyuki Yamamoto ,  Seiji Nakahata ,  Tomoki Uemura

IPC分类号： H01L29/20

CPC分类号： H01L29/872 ,  C30B25/00 ,  C30B29/406 ,  H01L21/02008 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205

摘要： Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass 10 has a wurtzitic crystalline structure and, at 30° C., its elastic constant C11 is from 348 GPa to 365 GPa and its elastic constant C13 is from 90 GPa to 98 GPa; alternatively its elastic constant C11 is from 352 GPa to 362 GPa.

摘要翻译： 提供GaN单晶体，其制造方法以及其制造的半导体器件及其制造方法，由此当生长GaN单晶质量时，并且当将生长的GaN单晶体块加工成 衬底或类似形式，以及当至少单层GaN半导体层以衬底形式形成在单晶GaN块上以制造半导体器件时，将裂纹控制到最小。 GaN单晶块10具有纤锌矿结晶结构，在30℃下，其弹性常数C11为348GPa至365GPa，其弹性常数C13为90GPa至98GPa; 或者其弹性常数C11为352GPa至362GPa。

公开(公告)号：US20090208749A1

公开(公告)日：2009-08-20

申请号：US12305001

申请日：2006-06-16

申请人： Michimasa Miyanaga ,  Naho Mizuhara ,  Shinsuke Fujiwara ,  Seiji Nakahata ,  Hideaki Nakahata

发明人： Michimasa Miyanaga ,  Naho Mizuhara ,  Shinsuke Fujiwara ,  Seiji Nakahata ,  Hideaki Nakahata

IPC分类号： B32B5/16 ,  C30B23/00

CPC分类号： C30B23/005 ,  C30B29/403 ,  C30B35/002 ,  Y10T428/2982

摘要： Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a III nitride single crystal (3) inside a crystal-growth vessel (11), the method being characterized in that a porous body formed from a metal carbide, whose porosity is between 0.1% and 70% is employed in at least a portion of the crystal-growth vessel (11). Employing the crystal-growth vessel (11) makes it possible to discharge from 1% to 50% of a source gas (4) inside the crystal-growth vessel (11) via the pores in the porous body to the outside of the crystal-growth vessel (11).

摘要翻译： 提供具有良好重现性的具有良好结晶度的III族氮化物单晶的方法和通过生长方法获得的III族氮化物晶体。 一种方法是在晶体生长容器（11）的内部生长III族氮化物单晶（3），其特征在于，至少使用由孔隙率在0.1％至70％之间的金属碳化物形成的多孔体 晶体生长容器（11）的一部分。 采用晶体生长容器（11）使得可以通过多孔体中的孔将晶体生长容器（11）内的源气体（4）的1％〜50％排出到晶体生长容器 生长容器（11）。

公开(公告)号：US08377204B2

公开(公告)日：2013-02-19

申请号：US12305001

申请日：2006-06-16

申请人： Michimasa Miyanaga ,  Naho Mizuhara ,  Shinsuke Fujiwara ,  Seiji Nakahata ,  Hideaki Nakahata

发明人： Michimasa Miyanaga ,  Naho Mizuhara ,  Shinsuke Fujiwara ,  Seiji Nakahata ,  Hideaki Nakahata

IPC分类号： C30B23/00 ,  B32B5/16

CPC分类号： C30B23/005 ,  C30B29/403 ,  C30B35/002 ,  Y10T428/2982

摘要： Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a III nitride single crystal (3) inside a crystal-growth vessel (11), the method being characterized in that a porous body formed from a metal carbide, whose porosity is between 0.1% and 70% is employed in at least a portion of the crystal-growth vessel (11). Employing the crystal-growth vessel (11) makes it possible to discharge from 1% to 50% of a source gas (4) inside the crystal-growth vessel (11) via the pores in the porous body to the outside of the crystal-growth vessel (11).

摘要翻译： 提供具有良好重现性的具有良好结晶度的III族氮化物单晶的方法和通过生长方法获得的III族氮化物晶体。 一种方法是在晶体生长容器（11）的内部生长III族氮化物单晶（3），其特征在于，至少使用由孔隙率在0.1％至70％之间的金属碳化物形成的多孔体 晶体生长容器（11）的一部分。 采用晶体生长容器（11）使得可以通过多孔体中的孔将晶体生长容器（11）内的源气体（4）的1％〜50％排出到晶体生长容器 生长容器（11）。

公开(公告)号：US20070145376A1

公开(公告)日：2007-06-28

申请号：US11616016

申请日：2006-12-26

申请人： Manabu Okui ,  Ken-ichiro Miyatake ,  Hideaki Nakahata ,  Shinsuke Fujiwara ,  Seiji Nakahata

发明人： Manabu Okui ,  Ken-ichiro Miyatake ,  Hideaki Nakahata ,  Shinsuke Fujiwara ,  Seiji Nakahata

IPC分类号： H01L29/15

CPC分类号： C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262

摘要： Affords GaN crystal substrates that can reduce the occurring of cracks and fractures in the GaN crystal substrates when the semiconductor devices are manufactured, semiconductor devices including them, methods of manufacturing the semiconductor devices, and methods of identifying the GaN crystal substrates. A gallium nitride crystal substrate has a surface area of 10 cm2 or more. The difference between the maximum and the minimum of Raman shifts corresponding to the E2H phonon mode in a region except for a region from the outer periphery in the surface of the gallium nitride crystal substrate to a line 5 mm radially inward from the outer periphery of the surface is 0.5 cm−1 or less. And also affords semiconductor devices including them, methods of manufacturing the semiconductor devices, and methods of identifying the GaN crystal substrates.

摘要翻译： 提供了当制造半导体器件时可以减少GaN晶体衬底中的裂纹和断裂的发生的GaN晶体衬底，包括它们的半导体器件，半导体器件的制造方法以及识别GaN晶体衬底的方法。 氮化镓晶体基板的表面积为10cm 2以上。 在除了从氮化镓晶体基板的表面的外周到管线5mm的区域以外的区域中，对应于E＆lt; 2H＆gt;声子模式的拉曼位移的最大值和最小值之间的差异 从表面的外周向内径向内侧为0.5cm -1以下。 并且还提供包括它们的半导体器件，制造半导体器件的方法以及识别GaN晶体衬底的方法。

公开(公告)号：US20100322841A1

公开(公告)日：2010-12-23

申请号：US12864874

申请日：2008-12-24

申请人： Takuji Okahisa ,  Seiji Nakahata ,  Tomoki Uemura

发明人： Takuji Okahisa ,  Seiji Nakahata ,  Tomoki Uemura

IPC分类号： C30B23/02 ,  C01B21/06

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B29/406 ,  C30B33/12

摘要： Affords Group-III nitride single-crystal ingots and III-nitride single-crystal substrates manufactured utilizing the ingots, as well as methods of manufacturing III-nitride single-crystal ingots and methods of manufacturing III-nitride single-crystal substrates, wherein the incidence of cracking during length-extending growth is reduced. Characterized by including a step of etching the edge surface of a base substrate, and a step of epitaxially growing onto the base substrate hexagonal-system III-nitride monocrystal having crystallographic planes on its side surfaces. In order to reduce occurrences of cracking during length-extending growth of the ingot, depositing-out of polycrystal and out-of-plane oriented crystal onto the periphery of the monocrystal must be controlled. A layer of the base substrate edge surface, as just described, where it has been mechanically altered is removed beforehand by etching, whereby crystallographic planes form on the side surfaces of the III-nitride single-crystal ingot that is formed onto the base substrate, which therefore controls depositing-out of polycrystal and out-of-plane oriented crystal and reduces occurrences of cracking.

摘要翻译： 提供利用晶锭制造的III族氮化物单晶锭和III族氮化物单晶衬底，以及III族氮化物单晶锭的制造方法和III族氮化物单晶衬底的制造方法， 在长度延长生长期间的裂纹减少。 其特征在于包括蚀刻基底衬底的边缘表面的步骤，以及在其基底上外延生长六面体系III族氮化物单晶的步骤，在其侧表面上具有晶面。 为了减少晶锭的长度延长生长期间的裂纹发生，必须控制将多晶和面外取向的晶体沉积到单晶的周围。 如已经机械地改变的刚刚描述的基底边缘表面的层通过蚀刻预先去除，由此在形成在基底基板上的III族氮化物单晶锭的侧表面上形成结晶平面， 因此控制多晶体和面外取向晶体的沉积并减少裂纹发生。

公开(公告)号：US08845992B2

公开(公告)日：2014-09-30

申请号：US12864874

申请日：2008-12-24

申请人： Takuji Okahisa ,  Seiji Nakahata ,  Tomoki Uemura

发明人： Takuji Okahisa ,  Seiji Nakahata ,  Tomoki Uemura

IPC分类号： C01B21/06 ,  C01C1/02 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B29/40 ,  C30B33/12 ,  C30B25/02

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B29/406 ,  C30B33/12

摘要： Affords Group-III nitride single-crystal ingots and III-nitride single-crystal substrates manufactured utilizing the ingots, as well as methods of manufacturing III-nitride single-crystal ingots and methods of manufacturing III-nitride single-crystal substrates, wherein the incidence of cracking during length-extending growth is reduced. Characterized by including a step of etching the edge surface of a base substrate, and a step of epitaxially growing onto the base substrate hexagonal-system III-nitride monocrystal having crystallographic planes on its side surfaces. In order to reduce occurrences of cracking during length-extending growth of the ingot, depositing-out of polycrystal and out-of-plane oriented crystal onto the periphery of the monocrystal must be controlled. A layer of the base substrate edge surface, as just described, where it has been mechanically altered is removed beforehand by etching, whereby crystallographic planes form on the side surfaces of the III-nitride single-crystal ingot that is formed onto the base substrate, which therefore controls depositing-out of polycrystal and out-of-plane oriented crystal and reduces occurrences of cracking.

摘要翻译： 提供利用晶锭制造的III族氮化物单晶锭和III族氮化物单晶衬底，以及III族氮化物单晶锭的制造方法和III族氮化物单晶衬底的制造方法， 在长度延长生长期间的裂纹减少。 其特征在于包括蚀刻基底衬底的边缘表面的步骤，以及在其基底上外延生长六面体系III族氮化物单晶的步骤，在其侧表面上具有晶面。 为了减少晶锭的长度延长生长期间的裂纹发生，必须控制将多晶和面外取向的晶体沉积到单晶的周围。 如已经机械地改变的刚刚描述的基底边缘表面的层通过蚀刻预先去除，由此在形成在基底基板上的III族氮化物单晶锭的侧表面上形成结晶平面， 因此控制多晶体和面外取向晶体的沉积并减少裂纹发生。

公开(公告)号：US08362521B2

公开(公告)日：2013-01-29

申请号：US12767783

申请日：2010-04-26

申请人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

发明人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

IPC分类号： H01L31/102 ,  H01L29/20

CPC分类号： H01L33/007 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L33/0075 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width.

摘要翻译： 尺寸适合于半导体器件的III族氮化物半导体晶体及其制造方法，III族氮化物半导体器件及其制造方法以及发光器具。 制造III族氮化物半导体晶体的方法包括在起始衬底上生长至少一种III族氮化物半导体晶体衬底的工艺，在III族氮化物半导体晶体衬底上生长至少一种III族氮化物半导体晶体层的工艺 以及从起始基板分离由III族氮化物半导体晶体基板和III族氮化物半导体晶体层构成的III族氮化物半导体晶体的工序，其特征在于，所述III族氮化物半导体晶体为10μm 以上且600μm以下，宽度为0.2mm以上且50mm以下。

公开(公告)号：US08258051B2

公开(公告)日：2012-09-04

申请号：US12467297

申请日：2009-05-17

申请人： Naho Mizuhara ,  Koji Uematsu ,  Michimasa Miyanaga ,  Keisuke Tanizaki ,  Hideaki Nakahata ,  Seiji Nakahata ,  Takuji Okahisa

发明人： Naho Mizuhara ,  Koji Uematsu ,  Michimasa Miyanaga ,  Keisuke Tanizaki ,  Hideaki Nakahata ,  Seiji Nakahata ,  Takuji Okahisa

IPC分类号： H01L21/20 ,  C30B19/12 ,  C30B25/18

CPC分类号： H01L29/045 ,  C30B19/02 ,  C30B23/025 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/2003 ,  Y10T428/24752

摘要： The present III-nitride crystal manufacturing method, a method of manufacturing a III-nitride crystal (20) having a major surface (20m) of plane orientation other than {0001}, designated by choice, includes: a step of slicing III-nitride bulk crystal (1) into a plurality of III-nitride crystal substrates (10p), (10q) having major surfaces (10pm), (10qm) of the designated plane orientation; a step of disposing the substrates (10p), (10q) adjoining each other sideways in such a way that the major surfaces (10pm), (10qm) of the substrates (10p), (10q) parallel each other and so that the [0001] directions in the substrates (10p), (10q) are oriented in the same way; and a step of growing III-nitride crystal (20) onto the major surfaces (10pm), (10qm) of the substrates (10p), (10q).

摘要翻译： 本III-氮化物晶体制造方法，通过选择指定的具有除{0001}以外的面取向主面（20m）的III族氮化物晶体（20）的制造方法包括：将III族氮化物晶体 大块晶体（1）分成多个具有指定平面取向的主表面（10pm），（10qm）的III族氮化物晶体基板（10p），（10q） 将基板（10p），（10q），（10q）的主表面（10pm），（10qm）彼此平行的方式设置为彼此相邻的基板（10p），（10q）的步骤， （10p），（10q）的方向相同的方向取向; 以及在衬底（10p），（10q）的主表面（10μm），（10qm）上生长III族氮化物晶体（20）的步骤。

公开(公告)号：US07834423B2

公开(公告)日：2010-11-16

申请号：US12409752

申请日：2009-03-24

申请人： Seiji Nakahata ,  Koji Uematsu ,  Hideaki Nakahata

发明人： Seiji Nakahata ,  Koji Uematsu ,  Hideaki Nakahata

IPC分类号： H01L29/20

CPC分类号： H01L21/7813 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/34 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/872 ,  H01L33/007 ,  H01L33/0079

摘要： AlxInyGa1-x-yN (0≦x≦1; 0≦x≦1; 0≦x+y≦1) layered device chips are produced by the steps of preparing a defect position controlled substrate of AlxInyGa1-x-yN (0≦x≦1; 0≦y≦1; 0≦x+y≦1) having a closed loop network defect accumulating region H of slow speed growth and low defect density regions ZY of high speed growth enclosed by the closed loop network defect accumulating region H, growing epitaxial upper layers B selectively on the low defect density regions ZY, harmonizing outlines and insides of device chips composed of the upper layers B with the defect accumulating region H and the low defect density regions ZY respectively, forming upper electrodes on the upper layers B or not forming the electrodes, dissolving bottom parts of the upper layers B by laser irradiation or mechanical bombardment, and separating the upper layer parts B as device chips C from each other and from the substrate S. Chip-separation is done instantly by the high power laser irradiation or mechanical shock without cutting the substrate S. The defect position controlled substrate S is repeatedly reused.

摘要翻译： AlxInyGa1-x-yN（0＆nlE; x＆nlE; 1; 0＆nlE; x＆nlE; 1; 0＆nlE; x + y＆nlE; 1）层状器件芯片是通过制备Al x In y Ga 1-x-y N的缺陷位置受控衬底（0＆ 具有由闭环网络缺陷累积区域包围的高速增长的低速增长的闭环网络缺陷累积区域H和低缺陷密度区域ZY的x＆lt; 1; 0＆nlE; y＆nlE; 1; 0＆nlE; x + y＆ H，选择性地在低缺陷密度区域ZY上生长外延上层B，分别与缺陷累积区域H和低缺陷密度区域ZY一起构成由上层B组成的器件芯片的外形和内部，在上部形成上部电极 层B或不形成电极，通过激光照射或机械轰击溶解上层B的底部，并将上层部分B作为器件芯片C彼此分离，并从衬底S分离。芯片分离通过 高宝 激光照射或机械冲击而不切割基板S.缺陷位置控制的基板S被重复使用。

公开(公告)号：US07772585B2

公开(公告)日：2010-08-10

申请号：US11446955

申请日：2006-06-06

申请人： Koji Uematsu ,  Fumitaka Sato ,  Ryu Hirota ,  Seiji Nakahata ,  Hideaki Nakahata

发明人： Koji Uematsu ,  Fumitaka Sato ,  Ryu Hirota ,  Seiji Nakahata ,  Hideaki Nakahata

IPC分类号： H01L31/00 ,  C30B25/00 ,  H01L21/00

CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647

摘要： A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, forming outlining concavities on mask-covered parts , not burying the facets, maintaining the convex facet hills on Π and the network concavities on , excluding dislocations in the facet hills down to the outlining concavities on , forming a defect accumulating region H on , decreasing dislocations in the facet hills and improving the facet hills to low defect density single crystal regions Z, producing a rugged nitride crystal, and slicing and polishing the nitride crystal into mirror nitride crystal wafers. After the fabrication of devices on the nitride wafer, dry-etching or wet etching of hot KOH or NaOH divides the device-carrying wafer into chips by corroding the network defect accumulating region H.

摘要翻译： 通过在下衬底上形成重复闭环单元形状的网络掩模，在气相中生长氮化物半导体晶体，产生在暴露部分“Pgr”上覆盖有小面的凸面小丘，从而形成氮化物半导体晶体衬底; 覆盖部分，不掩埋小面，保持凸面小丘在＆Pgr; 和网络凹面，不考虑小平面上的位错，形成凹陷凹陷，形成缺陷积聚区H，减小了小平面山丘的位错，改善了小丘到低缺陷密度单晶区Z，产生了坚固的 氮化物晶体，并将氮化物晶体切割和研磨成镜状氮化物晶片。 在氮化物晶片上的器件制造之后，通过腐蚀网络缺陷累积区域H将热的KOH或NaOH的干蚀刻或湿法蚀刻将装载的晶片分成芯片。