公开(公告)号：US4232219A

公开(公告)日：1980-11-04

申请号：US15615

申请日：1979-02-27

申请人： Hideaki Yamamoto ,  Toshihisa Tsukada ,  Eiichi Maruyama ,  Hiroya Inagaki

发明人： Hideaki Yamamoto ,  Toshihisa Tsukada ,  Eiichi Maruyama ,  Hiroya Inagaki

IPC分类号： H04N1/028 ,  G03F3/08 ,  H04N1/04 ,  H04N1/46 ,  H04N1/48 ,  G02B5/14

CPC分类号： H04N1/486

摘要： A photosensor including a fiber substrate having a light receiving window formed in a surface thereof spaced from an information surface to be read, a bundle of optical fibers disposed in the fiber substrate and positioned in the light receiving window. A plurality of color filters of different characteristics are disposed on an end face of the bundle of optical fibers, and a plurality of arrays of photosensitive elements corresponding to the color filters are also provided. The arrays of photosensitive elements are integrally provided with the fiber substrate and disposed in the region of the end face of the bundle of the optical fibers farthest away from the information surface.

摘要翻译： 一种光传感器，包括具有形成在与要读取的信息表面间隔开的表面中的光接收窗口的光纤基板，设置在光纤基板中并位于光接收窗口中的一束光纤。 具有不同特性的多个滤色器设置在光纤束的端面上，并且还提供了与滤色器对应的多个感光元件阵列。 感光元件阵列与光纤基片一体地设置，并且设置在离信息表面最远的光纤束的端面的区域中。

公开(公告)号：US4233506A

公开(公告)日：1980-11-11

申请号：US903161

申请日：1978-05-05

申请人： Hideaki Yamamoto ,  Makoto Matsui ,  Toshihisa Tsukada ,  Yoshizumi Eto ,  Tadaaki Hirai ,  Eiichi Maruyama

发明人： Hideaki Yamamoto ,  Makoto Matsui ,  Toshihisa Tsukada ,  Yoshizumi Eto ,  Tadaaki Hirai ,  Eiichi Maruyama

IPC分类号： G02B6/42 ,  G02B27/00 ,  G02B27/02 ,  G06K9/20 ,  H01L27/144 ,  H04N1/028 ,  H04N1/031 ,  G02B5/14

CPC分类号： H04N1/0312 ,  G02B6/421 ,  G02B6/4249 ,  G06K9/2009 ,  H01L27/1446 ,  H04N1/0311 ,  H04N1/0315

摘要： A pboto-sensor wherein a bundle of optical fibers is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate and being formed to be flat, an array of photosensitive elements which have photosensitive parts on an open end face of the optical fibers at the first surface of the substrate is disposed integrally with the substrate, and an end face of the optical fibers at the second surface of the substrate serves as an information reading surface.

摘要翻译： 一种光束传感器，其中一束光纤被布置在预定的衬底内，光纤束从衬底的第一表面延伸到第二表面并且被形成为平坦的，具有光敏部件的光敏元件阵列 在基板的第一表面处的光纤的开口端面与基板一体地设置，并且在基板的第二表面处的光纤的端面用作信息读取表面。

公开(公告)号：US4227078A

公开(公告)日：1980-10-07

申请号：US918273

申请日：1978-06-22

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Makoto Matsui ,  Toshihisa Tsukada ,  Tadaaki Hirai ,  Eiichi Maruyama

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Makoto Matsui ,  Toshihisa Tsukada ,  Tadaaki Hirai ,  Eiichi Maruyama

IPC分类号： H04N1/028 ,  G02B6/42 ,  G06K9/20 ,  H01L27/144 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0232 ,  H04N1/031 ,  G02B5/14

CPC分类号： H04N1/0312 ,  G02B6/421 ,  G02B6/4249 ,  G06K9/2009 ,  H01L27/1446 ,  H04N1/0311 ,  H04N1/0315

摘要： A photo-sensor wherein a bundle of optical fibers in the form of a sheet is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate, an array of photosensitive elements is disposed integrally with the substrate in such a manner that at least one transparent insulating layer intervenes between the photoelectric elements and the optical fiber bundle on, at least, an end face of the optical fiber bundle on the first surface side of the substrate, and an end face of the optical fiber bundle open to the second surface of the substrate serves as an information reading face.

摘要翻译： 一种光传感器，其中将片状形式的一束光纤设置在预定的基板内，光纤束从基板的第一表面延伸到第二表面，光敏元件阵列与 基板，使得至少一个透明绝缘层介于光电元件和光纤束之间，至少在基板的第一表面侧上的光纤束的端面和 向基板的第二表面开放的光纤束用作信息读取面。

公开(公告)号：US4394749A

公开(公告)日：1983-07-19

申请号：US154999

申请日：1980-05-30

申请人： Toshihisa Tsukada ,  Yukio Takasaki ,  Tadaaki Hirai ,  Toru Baji ,  Hideaki Yamamoto ,  Yasuo Tanaka ,  Eiichi Maruyama ,  Sachio Ishioka

发明人： Toshihisa Tsukada ,  Yukio Takasaki ,  Tadaaki Hirai ,  Toru Baji ,  Hideaki Yamamoto ,  Yasuo Tanaka ,  Eiichi Maruyama ,  Sachio Ishioka

IPC分类号： H01L27/146 ,  G11C13/00

CPC分类号： H01L27/14665

摘要： A photoelectric device having at least a predetermined impurity region which is disposed in a semiconductor substrate, and a photoelectric conversion portion which is constructed by stacking an electrode layer lying in contact with at least a part of the impurity region, a photoconductive material layer overlying the electrode layer, and a transparent electrode overlying the photoconductive material layer, characterized in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se, is disclosed. It is very favorable that the photoelectric conversion material layer made of the amorphous material principally containing Se is partially doped with Te so as to enhance its sensitivity. The amorphous chalcogenide material is very useful in the following point. In the course of forming, or after having formed, at least one photoconductive layer on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided.

摘要翻译： 具有至少设置在半导体衬底中的预定杂质区域的光电器件和通过堆叠与至少一部分杂质区域接触的电极层构成的光电转换部分，覆盖 电极层和覆盖光导材料层的透明电极，其特征在于，所述光导材料层由主要包含Se的无定形硫族化物材料制成。 非常有利的是，由主要含有Se的非晶体材料制成的光电转换材料层部分地掺杂有Te以提高其灵敏度。 无定形硫族化物材料在以下方面非常有用。 在形成表面不均匀的半导体本体上形成或形成至少一个光电导层的过程中，至少在光电导体的软化点的温度下进行热处理以使层平坦化，由此 可以避免归因于半导体本体的不平坦表面的感光体的不连续部分。

公开(公告)号：US4323912A

公开(公告)日：1982-04-06

申请号：US152690

申请日：1980-05-23

申请人： Norio Koike ,  Toshihisa Tsukada ,  Haruhisa Ando ,  Hideaki Yamamoto ,  Tadaaki Hirai ,  Masaharu Kubo ,  Eiichi Maruyama ,  Toru Baji ,  Yukio Takasaki ,  Shusaku Nagahara

发明人： Norio Koike ,  Toshihisa Tsukada ,  Haruhisa Ando ,  Hideaki Yamamoto ,  Tadaaki Hirai ,  Masaharu Kubo ,  Eiichi Maruyama ,  Toru Baji ,  Yukio Takasaki ,  Shusaku Nagahara

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H01L27/14

CPC分类号： H01L27/14665

摘要： In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.

摘要翻译： 在具有半导体集成电路的固态成像装置中，其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上， 设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极，施加到光透射电极的电压，从而偏压光电导区域 相对于其相对侧的区域，光入射侧的膜是正或负的; 一种固态成像装置，其特征在于，所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。

公开(公告)号：US4351856A

公开(公告)日：1982-09-28

申请号：US170185

申请日：1980-07-18

申请人： Makoto Matsui ,  Yasuhiro Shiraki ,  Yoshifumi Katayama ,  Toshihisa Tsukada ,  Eiichi Maruyama

发明人： Makoto Matsui ,  Yasuhiro Shiraki ,  Yoshifumi Katayama ,  Toshihisa Tsukada ,  Eiichi Maruyama

IPC分类号： G09G3/36 ,  H01L21/203 ,  H01L21/336 ,  H01L27/12 ,  H01L27/146 ,  H01L29/04 ,  H01L29/78 ,  H01L29/786 ,  B05D3/06 ,  B05D5/12 ,  B32B17/06

CPC分类号： H01L29/66757 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02639 ,  H01L27/12 ,  H01L27/14643 ,  H01L27/14665 ,  H01L29/04 ,  H01L29/78675 ,  Y10S148/169 ,  Y10S438/909

摘要： A semiconductor device is disclosed wherein a polycrystalline film whose principal constituent is silicon is formed on an amorphous or polycrystalline substrate, the polycrystalline film having a carrier mobility of at least 1 cm.sup.2 /V.multidot.sec, and wherein at least one active device is formed by employing the polycrystalline film as its material. A large-area or elongate active device can be provided. The polycrystalline film for such semiconductor device is formed by a method wherein the amorphous or polycrystalline substrate is mounted in a vacuum chamber and wherein the polycrystalline film whose principal constituent is silicon is evaporated on the substrate under the conditions that the pressure during the evaporation is below 1.times.10.sup.-8 Torr and that the partial pressure of oxygen during the evaporation is below 1.times.10.sup.-9 Torr.

摘要翻译： 公开了一种半导体器件，其中主要成分为硅的多晶膜形成在非晶或多晶衬底上，所述多晶膜的载流子迁移率为至少1cm 2 / Vxsec，并且其中至少一个有源器件通过使用 多晶膜作为其材料。 可以提供大面积或细长的有源装置。 用于这种半导体器件的多晶膜通过一种方法形成，其中非晶或多晶衬底安装在真空室中，其中主要成分为硅的多晶膜在蒸发过程中的压力低于条件下在衬底上蒸发 1×10 -8乇，蒸发时的氧分压低于1×10 -9乇。

公开(公告)号：US4249106A

公开(公告)日：1981-02-03

申请号：US92021

申请日：1979-11-07

申请人： Eiichi Maruyama ,  Saburo Ataka ,  Kiyohisa Inao ,  Yoshinori Imamura ,  Toshihisa Tsukada ,  Yukio Takasaki ,  Tadaaki Hirai

发明人： Eiichi Maruyama ,  Saburo Ataka ,  Kiyohisa Inao ,  Yoshinori Imamura ,  Toshihisa Tsukada ,  Yukio Takasaki ,  Tadaaki Hirai

IPC分类号： H01J9/233 ,  H01J29/39 ,  H01J29/45

CPC分类号： H01J29/39 ,  H01J29/45 ,  H01J9/233

摘要： A radiation sensitive screen comprising a crystalline silicon substrate which is located on a side of incidence of radiation, and an amorphous silicon film which contains hydrogen and which is located on the opposite side of the substrate to the side of the incidence of the radiation. The radiation sensitive screen of this invention can be manufactured by a simple method, and can achieve a high resolution. It is useful for the target of an image pickup tube, the electron bombardment target of an X-ray fluorescence multiplier tube, etc.

摘要翻译： 一种辐射敏感屏幕，其包括位于辐射入射侧的晶体硅衬底和包含氢的位于辐射入射侧的衬底相对侧上的非晶硅膜。 本发明的辐射敏感屏可以通过简单的方法制造，并且可以实现高分辨率。 对于图像拾取管的目标，X射线荧光倍增管的电子轰击靶等等是有用的

公开(公告)号：US4360821A

公开(公告)日：1982-11-23

申请号：US66230

申请日：1979-08-13

申请人： Toshihisa Tsukada ,  Eiichi Maruyama ,  Toru Baji ,  Saburo Ataka ,  Yoshinori Imamura ,  Akira Sasano ,  Masaharu Kubo ,  Norio Koike ,  Shusaku Nagahara

发明人： Toshihisa Tsukada ,  Eiichi Maruyama ,  Toru Baji ,  Saburo Ataka ,  Yoshinori Imamura ,  Akira Sasano ,  Masaharu Kubo ,  Norio Koike ,  Shusaku Nagahara

IPC分类号： H01L27/146 ,  H01L27/14

CPC分类号： H01L27/14665

摘要： In a solid-state imaging device having a plurality of photosensitive portions and a semiconductor substrate which includes at least scanning means for scanning the photosensitive portions, the photosensitive portions including a layer of a photosensitive material overlying the semiconductor substrate and a transparent electrically conductive film overlying the photosensitive material layer; a solid-state imaging device characterized in that the photosensitive material is an amorphous material whose indispensable constituent is silicon and which contains hydrogen. The hydrogen content of the photosensitive material is preferably 5 atomic-% to 30 atomic-%, especially 10 atomic-% to 25 atomic-%.

摘要翻译： 在具有多个感光部分的固态成像装置和至少包括用于扫描感光部分的扫描装置的半导体衬底上，感光部分包括覆盖在半导体衬底上的感光材料层和覆盖着透明导电膜的透明导电膜 感光材料层; 一种固态成像装置，其特征在于感光材料是不可缺少的成分是硅并且含有氢的无定形材料。 感光材料的氢含量优选为5原子％至30原子％，特别是10原子％至25原子％。

公开(公告)号：US4255686A

公开(公告)日：1981-03-10

申请号：US39580

申请日：1979-05-16

申请人： Eiichi Maruyama ,  Yoshinori Imamura ,  Saburo Ataka ,  Kiyohisa Inao ,  Yukio Takasaki ,  Toshihisa Tsukada ,  Tadaaki Hirai

发明人： Eiichi Maruyama ,  Yoshinori Imamura ,  Saburo Ataka ,  Kiyohisa Inao ,  Yukio Takasaki ,  Toshihisa Tsukada ,  Tadaaki Hirai

IPC分类号： H01J29/45 ,  H01L31/0248 ,  H01J31/38

CPC分类号： H01J29/45

摘要： In a photosensor having at least a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the light incidence; a photosensor characterized in that at least a region of said photoconductive layer for storing the charges is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is not lower than 10.sup.10 .OMEGA..multidot.cm.

摘要翻译： 在具有布置在光入射侧的至少一个透光导电层的光电传感器中，以及与光入射相对应地存储电荷的光电导层; 一种光电传感器，其特征在于，用于存储电荷的所述光电导层的至少一个区域由含有氢和硅作为其不可缺少的构成元素的非晶材料制成，其中硅占至少50原子％，氢相当于 至少10原子％且至多50原子％，并且其电阻率不低于1010欧米加×厘米2。

公开(公告)号：US5719408A

公开(公告)日：1998-02-17

申请号：US803011

申请日：1997-02-21

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L27/108 ,  H01L31/036

CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

摘要： In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

摘要翻译： 在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜 由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。 在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。 本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。 也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。