SEMICONDUCTOR PACKAGES AND METHODS FOR MANUFACTURING THEREOF

    公开(公告)号:US20230117806A1

    公开(公告)日:2023-04-20

    申请号:US17952688

    申请日:2022-09-26

    Abstract: Semiconductor packages and methods for manufacturing are disclosed. In one example, a method for manufacturing a semiconductor package includes providing an electrically conductive chip carrier including a mounting surface and a protrusion extending out of the mounting surface. At least one semiconductor chip is arranged on the mounting surface. The method further includes encapsulating the protrusion and the at least one semiconductor chip in an encapsulation material, wherein surfaces of the protrusion and the at least one semiconductor chip facing away from the mounting surface remain uncovered by the encapsulation material. An electrical redistribution layer is formed over the surfaces of the protrusion and the at least one semiconductor chip facing away from the mounting surface. The electrical redistribution layer provides an electrical connection between the protrusion and the at least one semiconductor chip.

    SEMICONDUCTOR PACKAGES INCLUDING ELECTRICAL REDISTRIBUTION LAYERS OF DIFFERENT THICKNESSES AND METHODS FOR MANUFACTURING THEREOF

    公开(公告)号:US20220157774A1

    公开(公告)日:2022-05-19

    申请号:US17502163

    申请日:2021-10-15

    Abstract: A semiconductor package is disclosed. In one example, the package includes a non-power chip including a first electrical contact arranged at a first main surface of the non-power chip. The semiconductor package further includes a power chip comprising a second electrical contact arranged at a second main surface of the power chip. A first electrical redistribution layer coupled to the first electrical contact and a second electrical redistribution layer coupled to the second electrical contact. When measured in a first direction vertical to at least one of the first main surface or the second main surface, a maximum thickness of at least a section of the first electrical redistribution layer is smaller than a maximum thickness of the second electrical redistribution layer.

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