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公开(公告)号:US11774919B2
公开(公告)日:2023-10-03
申请号:US17125768
申请日:2020-12-17
申请人: Intel Corporation
发明人: Suyoung Bang , Wootaek Lim , Eric Samson , Charles Augustine , Muhammad Khellah
摘要: A distributed and scalable all-digital LDO (D-DLDO) voltage regulator allowing rapid scaling across technology nodes. The distributed DLDO includes many tillable DLDO units regulating a single supply voltage with a shared power distribution network (PDN). The D-DLDO includes an all-digital proportional-integral-derivative (PID) controller that receives a first code indicative of a voltage behavior on a power supply rail. A droop detector is provided to compare the first code with a threshold to determine a droop event, wherein information about the droop event is provided to the PID controller, wherein the PID controller generates a second code according to the first code and the information about the droop event. The DLDO includes a plurality of power gates that receive the second code.
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公开(公告)号:US11450672B2
公开(公告)日:2022-09-20
申请号:US16859600
申请日:2020-04-27
申请人: Intel Corporation
IPC分类号: G11C17/16 , H01L27/11 , G11C11/418 , G11C11/419 , G11C11/412
摘要: An ultra-deep compute Static Random Access Memory (SRAM) with high compute throughput and multi-directional data transfer capability is provided. Compute units are placed in both horizontal and vertical directions to achieve a symmetric layout while enabling communication between the compute units. An SRAM array supports simultaneous read and write to the left and right section of the same SRAM subarray by duplicating pre-decoding logic inside the SRAM array. This allows applications with non-overlapping read and write address spaces to have twice the bandwidth as compared to a baseline SRAM array.
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公开(公告)号:US20210242872A1
公开(公告)日:2021-08-05
申请号:US17020667
申请日:2020-09-14
申请人: Intel Corporation
发明人: Suyoung Bang , Eric Samson , Wootaek Lim , Charles Augustine , Muhammad Khellah
摘要: An all-digital voltage monitor (ADVM) generates a multi-bit output code that changes in proportion to a voltage being monitored, by leveraging the voltage impact on a gate delay. ADVM utilizes a simple delay chain, which receives a clock-cycle-long pulse every clock cycle, such that the monitored supply voltage is sampled for one full cycle every cycle. The outputs of all delay cells of the delay chain collectively represents a current voltage state as a digital thermometer code. In AVDM, a voltage droop event thus results in a decrease in the output code from a nominal value, while an overshoot results in an increase in the output code.
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公开(公告)号:US10600462B2
公开(公告)日:2020-03-24
申请号:US15495936
申请日:2017-04-24
申请人: INTEL CORPORATION
摘要: In accordance with various embodiments of this disclosure, stray magnetic field mitigation in an MRAM memory such as a spin transfer torque (STT) random access memory (RAM), STTRAM is described. In one embodiment, retention of bitcell bit value storage states in an STTRAM may be facilitated by generating magnetic fields to compensate for stray magnetic fields which may cause bitcells of the memory to change state. In another embodiment, retention of bitcell bit value storage states in an STTRAM may be facilitated by selectively suspending access to a row of memory to temporarily terminate stray magnetic fields which may cause bitcells of the memory to change state. Other aspects are described herein.
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公开(公告)号:US10423203B2
公开(公告)日:2019-09-24
申请号:US15392559
申请日:2016-12-28
申请人: Intel Corporation
IPC分类号: G06F1/26 , H03K3/012 , G06F1/3293 , H03K3/356
摘要: Embodiments include apparatuses, methods, and systems for a flip-flop circuit with low-leakage transistors. The flip-flop circuit may be coupled to a logic circuit of an integrated circuit to store data for the logic circuit when the logic circuit is in a sleep state. The flip-flop circuit may pass a data signal for the logic circuit along a signal path. A capacitor may be coupled between the signal path and ground to store a value of the data signal when the logic circuit is in the sleep state. A low-leakage transistor, such as an IGZO transistor, may be coupled between the capacitor and the signal path and may selectively turn on when the logic circuit transitions from the active state to the sleep state to store the value of the data signal in the capacitor. Other embodiments may be described and claimed.
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公开(公告)号:US20180107922A1
公开(公告)日:2018-04-19
申请号:US15294666
申请日:2016-10-14
申请人: Intel Corporation
摘要: A processor or integrated circuit includes a memory to store weight values for a plurality neuromorphic states and a circuitry coupled to the memory. The circuitry is to detect an incoming data signal for a pre-synaptic neuromorphic state and initiate a time window for the pre-synaptic neuromorphic state in response to detecting the incoming data signal. The circuitry is further to, responsive to detecting an end of the time window: retrieve, from the memory, a weight value for a post-synaptic neuromorphic state for which an outgoing data signal is generated during the time window, the post-synaptic neuromorphic state being a fan-out connection of the pre-synaptic neuromorphic state; perform a causal update to the weight value, according to a learning function, to generate an updated weight value; and store the updated weight value back to the memory.
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公开(公告)号:US20180107919A1
公开(公告)日:2018-04-19
申请号:US15370542
申请日:2016-12-06
申请人: Intel Corporation
摘要: Systems, apparatuses and methods may provide a hybrid compression scheme to store synaptic weights in neuromorphic cores. The hybrid compression scheme utilizes a run-length encoding (RLE) compression approach, a dictionary-based encode compression scheme, and a compressionless encoding scheme to store the weights for valid synaptic connections in a synaptic weight memory.
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公开(公告)号:US09934082B2
公开(公告)日:2018-04-03
申请号:US15374922
申请日:2016-12-09
申请人: Intel Corporation
发明人: Shigeki Tomishima , Charles Augustine , Wei Wu , Shih Lien L. Lu
IPC分类号: G11C7/02 , G06F11/07 , G11C13/00 , G11C11/16 , G11C29/42 , G11C29/52 , G06F3/06 , G06F11/10 , H03M13/15 , H03M13/37 , H03M13/00
CPC分类号: G06F11/073 , G06F3/0619 , G06F3/064 , G06F3/0679 , G06F11/0751 , G06F11/079 , G06F11/0793 , G06F11/1048 , G06F11/1076 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/004 , G11C29/42 , G11C29/52 , G11C2013/0042 , G11C2213/79 , G11C2213/82 , H03M13/1575 , H03M13/373 , H03M13/6502
摘要: Described is an apparatus which comprises: a complementary resistive memory bit-cell; a first sense amplifier coupled to the complementary resistive memory bit-cell via access devices; a second sense amplifier coupled to the first sense amplifier and to the complementary resistive memory bit-cell via the access devices, wherein the second sense amplifier is operable to detect an error in the complementary resistive memory bit-cell.
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9.
公开(公告)号:US09373395B1
公开(公告)日:2016-06-21
申请号:US14638942
申请日:2015-03-04
申请人: Intel Corporation
IPC分类号: G11C13/00 , G11C11/419
CPC分类号: G11C13/0069 , G11C7/1006 , G11C11/1673 , G11C11/1675 , G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/0021 , G11C13/0033 , G11C13/004 , G11C2013/0042 , G11C2213/79 , G11C2213/82
摘要: Described is an apparatus which comprises: a complementary resistive memory bit-cell; and a sense amplifier coupled to the complementary resistive memory bit-cell, wherein the sense amplifier includes: a first output node; and a first transistor which is operable to cause a deterministic output on the first output node.
摘要翻译: 描述了一种装置,其包括:互补电阻存储器位单元; 以及耦合到所述互补电阻存储器位单元的读出放大器,其中所述读出放大器包括:第一输出节点; 以及第一晶体管,其可操作以在所述第一输出节点上产生确定性输出。
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公开(公告)号:US11211935B2
公开(公告)日:2021-12-28
申请号:US17020667
申请日:2020-09-14
申请人: Intel Corporation
发明人: Suyoung Bang , Eric Samson , Wootaek Lim , Charles Augustine , Muhammad Khellah
摘要: An all-digital voltage monitor (ADVM) generates a multi-bit output code that changes in proportion to a voltage being monitored, by leveraging the voltage impact on a gate delay. ADVM utilizes a simple delay chain, which receives a clock-cycle-long pulse every clock cycle, such that the monitored supply voltage is sampled for one full cycle every cycle. The outputs of all delay cells of the delay chain collectively represents a current voltage state as a digital thermometer code. In AVDM, a voltage droop event thus results in a decrease in the output code from a nominal value, while an overshoot results in an increase in the output code.
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