摘要:
A high bright LED comprises a substrate, a conductive layer, a first semiconductor layer, a luminous layer, a second semiconductor layer, a first electrode, a second electrode and an insulation structure. The conductive layer, the first semiconductor layer, the luminous layer and the second semiconductor layer are disposed upwards from an upper solder layer of the substrate in order. The first electrode is electrically connected to the conductive layer The second electrode penetrates through the conductive layer, the first semiconductor layer and the luminous layer to make the upper solder and the second semiconductor layer electrically connected. The insulation structure comprises at least two passivation layers peripherally wrapping the second electrode. The thicknesses of the at least two passivation layers are conformed to the distributed Bragg reflection technique to make the passivation layers jointly used as a reflector with high reflectance.
摘要:
A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The surface has a first region and a second region alternately distributed over the surface. The semiconductor stacking layer is disposed on the conductive substrate, and the surface of the conductive substrate faces the semiconductor stacking layer. The patterned seed crystal layer is disposed on the first region of the surface of the conductive substrate and between the conductive substrate and the semiconductor stacking layer. The patterned seed crystal layer separates the semiconductor stacking layer from the first region. The semiconductor stacking layer covers the patterned seed crystal layer and the second region, and is electrically connected to the conductive substrate through the second region. A fabrication method of the light-emitting diode chip structure is also provided.
摘要:
A light-emitting diode structure is disclosed. A substrate has a first semiconductor layer, a light-emitting layer and a second semiconductor layer formed thereon. The first and second semiconductor layers are of opposite conductivity types. A first contact electrode is disposed between the first semiconductor layer and the substrate, and has a protruding portion extending into the second semiconductor layer. A barrier layer is conformally formed on the first contact electrode and exposes a top surface of the protruding portion. A current blocking member is disposed on the barrier layer and around at least a sidewall of the protruding portion. A second contact electrode is disposed between the first semiconductor layer and the first contact electrode, and in direct contact with the first semiconductor layer, wherein the second contact electrode is electrically insulated from the first contact electrode by the barrier layer.
摘要:
A method for fabricating a light-emitting device is provided. The method includes: providing a substrate; forming a sacrificial dielectric layer on the substrate, wherein the sacrificial dielectric layer is a structure containing voids; forming a buffer layer on the sacrificial dielectric layer; forming an epitaxial light-emitting structure on the buffer layer; forming a metal bonding layer on the epitaxial light-emitting structure; bonding the metal bonding layer to a thermally conductive substrate; and wet etching the sacrificial dielectric layer for to remove the substrate.
摘要:
A method for fabricating a light-emitting device is provided. The method includes: providing a substrate; forming a sacrificial dielectric layer on the substrate, wherein the sacrificial dielectric layer is a structure containing voids; forming a buffer layer on the sacrificial dielectric layer; forming an epitaxial light-emitting structure on the buffer layer; forming a metal bonding layer on the epitaxial light-emitting structure; bonding the metal bonding layer to a thermally conductive substrate; and wet etching the sacrificial dielectric layer for to remove the substrate.
摘要:
Disclosed is an organic non-volatile memory (ONVM) material including nanoparticles evenly dispersed in a first polymer. The nanoparticles have a metal core covered by a second polymer to form a core/shell structure, and the first polymer has a higher polymerization degree and molecular weight than the second polymer. The ONVM material of the invention has high uniformity, thereby stabilizing the electric properties of the memory device, such as increasing rewrite counts, increasing data retention time, reducing driving voltage, reducing write current, and enhancing current on/off ratio.
摘要:
A patterned substrate of a light emitting semiconductor device has a plurality of convex members on a top surface thereof. Each convex member has a substantially flat top surface and a plurality of convex arc-shaped sidewalls.
摘要:
Disclosed is an organic non-volatile memory (ONVM) material including nanoparticles evenly dispersed in a first polymer. The nanoparticles have a metal core covered by a second polymer to form a core/shell structure, and the first polymer has a higher polymerization degree and molecular weight than the second polymer. The ONVM material of the invention has high uniformity, thereby stabilizing the electric properties of the memory device, such as increasing rewrite counts, increasing data retention time, reducing driving voltage, reducing write current, and enhancing current on/off ratio.
摘要:
A conductive paste is provided. The conductive paste includes a conductive powder and a resin composition. The resin composition includes a polyester acrylate oligomer, a hydroxyalkyl acrylate (HAA) and a polyvinylpyrrolidone (PVP) derivative. The conductive powder and the resin composition have a weight ratio of 40-85:15-60. The polyester acrylate oligomer, the hydroxyalkyl acrylate (HAA) and the polyvinylpyrrolidone (PVP) derivative have a weight ratio of 15-70:10-60:3-40.
摘要:
A conductive paste is provided. The conductive paste includes a conductive powder and a resin composition. The resin composition includes a polyester acrylate oligomer, a hydroxyalkyl acrylate (HAA) and a polyvinylpyrrolidone (PVP) derivative. The conductive powder and the resin composition have a weight ratio of 40-85:15-60. The polyester acrylate oligomer, the hydroxyalkyl acrylate (HAA) and the polyvinylpyrrolidone (PVP) derivative have a weight ratio of 15-70:10-60:3-40.