公开(公告)号：US10541168B2

公开(公告)日：2020-01-21

申请号：US15799011

申请日：2017-10-31

Applicant: LAM RESEARCH CORPORATION

Inventor： Ali Sucipto Tan ,  Haoquan Yan ,  Marc Estoque ,  Damon Tyrone Genetti ,  Jon McChesney ,  Alexander Miller Paterson

IPC: H01L21/68 ,  H01L21/687

Abstract: A system for determining an alignment of an edge ring on a substrate support includes a robot control module configured to control a robot to place the edge ring onto the substrate support and retrieve the edge ring from the substrate support. An alignment module is configured to determine a plurality of first positions of the edge ring on the robot prior to being placed onto the substrate support and determine a plurality of second positions of the edge ring on the robot subsequent to being retrieved from the substrate support. An edge ring position module configured to determine a centered position of the edge ring relative to the substrate support based on offsets between the plurality of first positions and the plurality of second positions.

公开(公告)号：US20210183687A1

公开(公告)日：2021-06-17

申请号：US17181571

申请日：2021-02-22

Applicant: Lam Research Corporation

Inventor： Haoquan Yan ,  Robert Griffith O'Neill ,  Raphael Casaes ,  Jon McChesney ,  Alex Paterson

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/02 ,  H01J37/20 ,  H01J37/32

Abstract: An edge ring arrangement for a processing chamber includes a first ring configured to surround and overlap a radially outer edge of an upper plate of a pedestal arranged in the processing chamber, a second ring arranged below the first moveable ring, wherein a portion of the first ring overlaps the second ring, a first actuator configured to actuate a first pillar to selectively move the first ring to a raised position and a lowered position relative to the pedestal, and a second actuator configured to actuate a second pillar to selectively move the second ring to a raised position and a lowered position relative to the pedestal.

公开(公告)号：US12087561B2

公开(公告)日：2024-09-10

申请号：US18329791

申请日：2023-06-06

Applicant: Lam Research Corporation

Inventor： John Stephen Drewery ,  Tom A. Kamp ,  Haoquan Yan ,  John Edward Daugherty ,  Ali Sucipto Tan ,  Ming-Kuei Tseng ,  Bruce Edmund Freeman

IPC: H01J37/32 ,  C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32862 ,  C23C16/0236 ,  C23C16/4405 ,  C23C16/45544 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/67069 ,  H01J37/3211 ,  H01J37/32715 ,  H01J2237/1825 ,  H01J2237/186 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01L21/02164 ,  H01L21/6833

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

公开(公告)号：US11710623B2

公开(公告)日：2023-07-25

申请号：US17302622

申请日：2021-05-07

Applicant: Lam Research Corporation

Inventor： John Stephen Drewery ,  Tom A. Kamp ,  Haoquan Yan ,  John Edward Daugherty ,  Ali Sucipto Tan ,  Ming-Kuei Tseng ,  Bruce Freeman

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  C23C16/02 ,  C23C16/455 ,  C23C16/44 ,  H01L21/683

CPC classification number: H01J37/32862 ,  C23C16/0236 ,  C23C16/4405 ,  C23C16/45544 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/0228 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/67069 ,  H01J37/3211 ,  H01J37/32715 ,  H01J2237/186 ,  H01J2237/1825 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01L21/02164 ,  H01L21/6833

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

公开(公告)号：US11031215B2

公开(公告)日：2021-06-08

申请号：US16584095

申请日：2019-09-26

Applicant: Lam Research Corporation

Inventor： John Stephen Drewery ,  Tom A. Kamp ,  Haoquan Yan ,  John Edward Daugherty ,  Ali Sucipto Tan ,  Ming-Kuei Tseng ,  Bruce Edmund Freeman

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  C23C16/02 ,  C23C16/455 ,  C23C16/44 ,  H01L21/683

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

公开(公告)号：US10658222B2

公开(公告)日：2020-05-19

申请号：US14705430

申请日：2015-05-06

Applicant: Lam Research Corporation

Inventor： Haoquan Yan ,  Robert Griffith O'Neill ,  Raphael Casaes ,  Jon McChesney ,  Alex Paterson

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32 ,  H01J37/02 ,  H01J37/20

Abstract: A substrate processing system includes a processing chamber and a pedestal arranged in the processing chamber. An edge coupling ring is arranged adjacent to a radially outer edge of the pedestal. A first actuator is configured to selectively move the edge coupling ring to a raised position, relative to the pedestal to provide clearance between the edge coupling ring and the pedestal to allow a robot arm to remove the edge coupling ring from the processing chamber.

公开(公告)号：US20160211166A1

公开(公告)日：2016-07-21

申请号：US14705430

申请日：2015-05-06

Applicant: Lam Research Corporation

Inventor： Haoquan Yan ,  Robert Griffith O'Neill ,  Raphael Casaes ,  Jon McChesney ,  Alex Paterson

IPC: H01L21/687 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01L21/68742 ,  H01J37/023 ,  H01J37/20 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/67069 ,  H01L21/68735

Abstract: A substrate processing system includes a processing chamber and a pedestal arranged in the processing chamber. An edge coupling ring is arranged adjacent to a radially outer edge of the pedestal. A first actuator is configured to selectively move the edge coupling ring to a raised position, relative to the pedestal to provide clearance between the edge coupling ring and the pedestal to allow a robot arm to remove the edge coupling ring from the processing chamber.

Abstract translation: 基板处理系统包括处理室和布置在处理室中的基座。 边缘联接环布置成邻近基座的径向外边缘。 第一致动器构造成相对于基座选择性地将边缘联接环移动到升高位置，以在边缘联接环和基座之间提供间隙，以允许机器人臂从处理室移除边缘联接环。

公开(公告)号：US12027410B2

公开(公告)日：2024-07-02

申请号：US17181571

申请日：2021-02-22

Applicant: LAM RESEARCH CORPORATION

Inventor： Haoquan Yan ,  Robert Griffith O'Neill ,  Raphael Casaes ,  Jon Mcchesney ,  Alex Paterson

IPC: H01L21/687 ,  H01J37/02 ,  H01J37/20 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/68742 ,  H01J37/023 ,  H01J37/20 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/67069 ,  H01L21/68735

Abstract: An edge ring arrangement for a processing chamber includes a first ring configured to surround and overlap a radially outer edge of an upper plate of a pedestal arranged in the processing chamber, a second ring arranged below the first moveable ring, wherein a portion of the first ring overlaps the second ring, a first actuator configured to actuate a first pillar to selectively move the first ring to a raised position and a lowered position relative to the pedestal, and a second actuator configured to actuate a second pillar to selectively move the second ring to a raised position and a lowered position relative to the pedestal.

公开(公告)号：US20190341275A1

公开(公告)日：2019-11-07

申请号：US15972927

申请日：2018-05-07

Applicant: Lam Research Corporation

Inventor： Yansha JIN ,  Zhongkui Tan ,  Tyler Kent ,  Haoquan Yan ,  Qian Fu ,  Anthony Contreras

IPC: H01L21/67 ,  H01J37/32 ,  B08B7/00 ,  B08B5/00

Abstract: A method for performing a cleaning process in a processing chamber includes, without a substrate arranged on a substrate support of the processing chamber, supplying reactant gases in a side gas flow via side tuning holes of a gas distribution device to effect deposition of a coating on an edge ring of the substrate support. The side gas flow targets an outer region of the processing chamber above the edge ring, and the reactant gases are supplied at a first flow rate. The method further includes, while supplying the reactant gases via the side tuning holes, supplying inert gases in a center gas flow via center holes of the gas distribution device. The inert gases are supplied at a second flow rate that is greater than the first flow rate.

公开(公告)号：US20180138069A1

公开(公告)日：2018-05-17

申请号：US15799011

申请日：2017-10-31

Applicant: Lam Research Corporation

Inventor： Ali Sucipto Tan ,  Haoquan Yan ,  Marc Estoque ,  Damon Tyrone Genetti ,  Jon McChesney ,  Alexander Miller Paterson

IPC: H01L21/68 ,  H01L21/687

Abstract: A system for determining an alignment of an edge ring on a substrate support includes a robot control module configured to control a robot to place the edge ring onto the substrate support and retrieve the edge ring from the substrate support. An alignment module is configured to determine a plurality of first positions of the edge ring on the robot prior to being placed onto the substrate support and determine a plurality of second positions of the edge ring on the robot subsequent to being retrieved from the substrate support. An edge ring position module configured to determine a centered position of the edge ring relative to the substrate support based on offsets between the plurality of first positions and the plurality of second positions.