公开(公告)号：US07112961B2

公开(公告)日：2006-09-26

申请号：US10685210

申请日：2003-10-14

申请人： Lawrence C. Lei ,  Siqing Lu ,  Yu Chang ,  Cecilia Martner ,  Quyen Pham ,  Yu Ping Gu ,  Joel Huston ,  Paul Smith ,  Gabriel Lorimer Miller

发明人： Lawrence C. Lei ,  Siqing Lu ,  Yu Chang ,  Cecilia Martner ,  Quyen Pham ,  Yu Ping Gu ,  Joel Huston ,  Paul Smith ,  Gabriel Lorimer Miller

IPC分类号： G01B7/06 ,  G01N27/72

CPC分类号： G01B7/105

摘要： A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.

摘要翻译： 提供了一种用于测量被测物体的厚度的方法和装置。 该装置包括具有第一和第二传感器头的涡流传感器。 传感器头被定位成在其间具有预定的间隙，以通过该测试对象的至少一部分通过间隙。 当测试对象移动通过间隙时，传感器头在测试对象上的给定采样位置进行测量。 该装置还包括位置检测机构，用于确定测试对象上的采样位置的位置。 该装置还包括与涡流传感器和位置感测机构通信的评估电路，用于确定采样位置处的测试对象的厚度。

公开(公告)号：US20080186022A1

公开(公告)日：2008-08-07

申请号：US12099747

申请日：2008-04-08

申请人： Lawrence C. Lei ,  Siqing Lu ,  Yu Chang ,  Cecilia Martner ,  Quyen Pham ,  Yu Ping Gu ,  Joel Huston ,  Paul Smith ,  Gabriel Lorimer Miller

发明人： Lawrence C. Lei ,  Siqing Lu ,  Yu Chang ,  Cecilia Martner ,  Quyen Pham ,  Yu Ping Gu ,  Joel Huston ,  Paul Smith ,  Gabriel Lorimer Miller

IPC分类号： G01B7/06

CPC分类号： G01B7/105

摘要： A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.

摘要翻译： 提供了一种用于测量被测物体的厚度的方法和装置。 该装置包括具有第一和第二传感器头的涡流传感器。 传感器头被定位成在其间具有预定的间隙，以通过该测试对象的至少一部分通过间隙。 当测试对象移动通过间隙时，传感器头在测试对象上的给定采样位置进行测量。 该装置还包括位置检测机构，用于确定测试对象上的采样位置的位置。 该装置还包括与涡流传感器和位置感测机构通信的评估电路，用于确定采样位置处的测试对象的厚度。

公开(公告)号：US07777483B2

公开(公告)日：2010-08-17

申请号：US12099747

申请日：2008-04-08

申请人： Lawrence C. Lei ,  Siqing Lu ,  Yu Chang ,  Cecilia Martner ,  Quyen Pham ,  Yu Ping Gu ,  Joel Huston ,  Paul Smith ,  Gabriel Lorimer Miller

发明人： Lawrence C. Lei ,  Siqing Lu ,  Yu Chang ,  Cecilia Martner ,  Quyen Pham ,  Yu Ping Gu ,  Joel Huston ,  Paul Smith ,  Gabriel Lorimer Miller

IPC分类号： G01B7/06 ,  G01N27/72

CPC分类号： G01B7/105

摘要： A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.

摘要翻译： 提供了一种用于测量被测物体的厚度的方法和装置。 该装置包括具有第一和第二传感器头的涡流传感器。 传感器头被定位成在其间具有预定的间隙，以通过该测试对象的至少一部分通过间隙。 当测试对象移动通过间隙时，传感器头在测试对象上的给定采样位置进行测量。 该装置还包括位置检测机构，用于确定测试对象上的采样位置的位置。 该装置还包括与涡流传感器和位置感测机构通信的评估电路，用于确定采样位置处的测试对象的厚度。

公开(公告)号：US07355394B2

公开(公告)日：2008-04-08

申请号：US11522416

申请日：2006-09-18

申请人： Lawrence C. Lei ,  Siqing Lu ,  Yu Chang ,  Cecilia Martner ,  Quyen Pham ,  Yu P. Gu ,  Joel Huston ,  Paul Smith ,  G. Lorimer Miller

发明人： Lawrence C. Lei ,  Siqing Lu ,  Yu Chang ,  Cecilia Martner ,  Quyen Pham ,  Yu P. Gu ,  Joel Huston ,  Paul Smith ,  G. Lorimer Miller

IPC分类号： G01B7/06 ,  G01N27/72

CPC分类号： G01B7/105

摘要： A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.

摘要翻译： 提供了一种用于测量被测物体的厚度的方法和装置。 该装置包括具有第一和第二传感器头的涡流传感器。 传感器头被定位成在其间具有预定的间隙，以通过该测试对象的至少一部分通过间隙。 当测试对象移动通过间隙时，传感器头在测试对象上的给定采样位置进行测量。 该装置还包括位置检测机构，用于确定测试对象上的采样位置的位置。 该装置还包括与涡流传感器和位置感测机构通信的评估电路，用于确定采样位置处的测试对象的厚度。

公开(公告)号：US20070063698A1

公开(公告)日：2007-03-22

申请号：US11522416

申请日：2006-09-18

申请人： Lawrence Lei ,  Siqing Lu ,  Yu Chang ,  Cecilia Martner ,  Quyen Pham ,  Yu Gu ,  Joel Huston ,  Paul Smith ,  Gabriel Miller

发明人： Lawrence Lei ,  Siqing Lu ,  Yu Chang ,  Cecilia Martner ,  Quyen Pham ,  Yu Gu ,  Joel Huston ,  Paul Smith ,  Gabriel Miller

IPC分类号： G01B7/06

CPC分类号： G01B7/105

摘要： A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.

摘要翻译： 提供了一种用于测量被测物体的厚度的方法和装置。 该装置包括具有第一和第二传感器头的涡流传感器。 传感器头被定位成在其间具有预定的间隙，以通过该测试对象的至少一部分通过间隙。 当测试对象移动通过间隙时，传感器头在测试对象上的给定采样位置进行测量。 该装置还包括位置检测机构，用于确定测试对象上的采样位置的位置。 该装置还包括与涡流传感器和位置感测机构通信的评估电路，用于确定采样位置处的测试对象的厚度。

公开(公告)号：US20050205110A1

公开(公告)日：2005-09-22

申请号：US11137609

申请日：2005-05-24

申请人： Chien-Teh Kao ,  Jing-Pei (Connie) Chou ,  Chiukin (Steven) Lai ,  Sal Umotoy ,  Joel Huston ,  Son Trinh ,  Mei Chang ,  Xiaoxiong (John) Yuan ,  Yu Chang ,  Xinliang Lu ,  Wei Wang ,  See-Eng Phan

发明人： Chien-Teh Kao ,  Jing-Pei (Connie) Chou ,  Chiukin (Steven) Lai ,  Sal Umotoy ,  Joel Huston ,  Son Trinh ,  Mei Chang ,  Xiaoxiong (John) Yuan ,  Yu Chang ,  Xinliang Lu ,  Wei Wang ,  See-Eng Phan

IPC分类号： H01L21/28 ,  C23C16/455 ,  C23F1/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/8238 ,  H01L23/12 ,  H01L23/52 ,  C25F1/00

CPC分类号： H01L21/02104 ,  C23C14/022 ,  C23C14/50 ,  C23C14/541 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32862 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.

摘要翻译： 提供了从衬底表面去除天然氧化物的方法。 在至少一个实施例中，该方法包括将基板表面支撑在真空室中，并从室内的气体混合物产生反应物质。 然后将衬底表面在腔室内冷却，并且反应物质被引导到冷却的衬底表面以与其上的天然氧化物反应并在衬底表面上形成膜。 然后将衬底表面在室内加热以使膜蒸发。

公开(公告)号：US20050230350A1

公开(公告)日：2005-10-20

申请号：US11063645

申请日：2005-02-22

申请人： Chien-Teh Kao ,  Jing-Pei Chou ,  Chiukin Lai ,  Sal Umotoy ,  Joel Huston ,  Son Trinh ,  Mei Chang ,  Xiaoxiong Yuan ,  Yu Chang ,  Xinliang Lu ,  Wei Wang ,  See-Eng Phan

发明人： Chien-Teh Kao ,  Jing-Pei Chou ,  Chiukin Lai ,  Sal Umotoy ,  Joel Huston ,  Son Trinh ,  Mei Chang ,  Xiaoxiong Yuan ,  Yu Chang ,  Xinliang Lu ,  Wei Wang ,  See-Eng Phan

IPC分类号： H01L21/28 ,  C23C16/455 ,  C23F1/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/8238 ,  H01L23/12 ,  H01L23/52

CPC分类号： H01L21/02104 ,  C23C14/022 ,  C23C14/50 ,  C23C14/541 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32862 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the chamber comprises a chamber body and a support assembly at least partially disposed within the chamber body and adapted to support a substrate thereon. The support assembly includes one or more fluid channels at least partially formed therein and capable of cooling the substrate. The chamber further comprises a lid assembly disposed on an upper surface of the chamber body. The lid assembly includes a first electrode and a second electrode which define a plasma cavity therebetween, wherein the second electrode is adapted to connectively heat the substrate.

摘要翻译： 提供了一种从衬底表面去除天然氧化物的方法和装置。 在一个方面，腔室包括室主体和至少部分地设置在腔体内并适于在其上支撑衬底的支撑组件。 支撑组件包括至少部分地形成在其中并能够冷却基底的一个或多个流体通道。 所述室还包括设置在所述室主体的上表面上的盖组件。 盖组件包括在其间限定等离子体腔的第一电极和第二电极，其中第二电极适于连接地加热衬底。

公开(公告)号：US20050218507A1

公开(公告)日：2005-10-06

申请号：US11137199

申请日：2005-05-24

申请人： Chien-Teh Kao ,  Jing-Pei (Connie) Chou ,  Chiukin (Steven) Lai ,  Sal Umotoy ,  Joel Huston ,  Son Trinh ,  Mei Chang ,  Xiaoxiong (John) Yuan ,  Yu Chang ,  Xinliang Lu ,  Wei Wang ,  See-Eng Phan

发明人： Chien-Teh Kao ,  Jing-Pei (Connie) Chou ,  Chiukin (Steven) Lai ,  Sal Umotoy ,  Joel Huston ,  Son Trinh ,  Mei Chang ,  Xiaoxiong (John) Yuan ,  Yu Chang ,  Xinliang Lu ,  Wei Wang ,  See-Eng Phan

IPC分类号： H01L21/28 ,  C23C16/455 ,  C23F1/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/8238 ,  H01L23/12 ,  H01L23/52

CPC分类号： H01L21/02104 ,  C23C14/022 ,  C23C14/50 ,  C23C14/541 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32862 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L2924/0002 ,  H01L2924/00

摘要： A lid assembly for semiconductor processing is provided. In at least one embodiment, the lid assembly includes a first electrode comprising an expanding section that has a gradually increasing inner diameter. The lid assembly also includes a second electrode disposed opposite the first electrode. A plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode.

摘要翻译： 提供了一种用于半导体处理的盖组件。 在至少一个实施例中，盖组件包括第一电极，其包括具有逐渐增加的内径的扩张部分。 盖组件还包括与第一电极相对设置的第二电极。 在第一电极的扩展部分的内径和第二电极的第一表面之间限定等离子体腔。

公开(公告)号：US20050221552A1

公开(公告)日：2005-10-06

申请号：US11137090

申请日：2005-05-24

申请人： Chien-Teh Kao ,  Jing-Pei (Connie) Chou ,  Chiukin (Steven) Lai ,  Sal Umotoy ,  Joel Huston ,  Son Trinh ,  Mei Chang ,  Xiaoxiong (John) Yuan ,  Yu Chang ,  Xinliang Lu ,  Wei Wang ,  See-Eng Phan

发明人： Chien-Teh Kao ,  Jing-Pei (Connie) Chou ,  Chiukin (Steven) Lai ,  Sal Umotoy ,  Joel Huston ,  Son Trinh ,  Mei Chang ,  Xiaoxiong (John) Yuan ,  Yu Chang ,  Xinliang Lu ,  Wei Wang ,  See-Eng Phan

IPC分类号： H01L21/28 ,  C23C16/455 ,  C23F1/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/8238 ,  H01L23/12 ,  H01L23/52

CPC分类号： H01L21/02104 ,  C23C14/022 ,  C23C14/50 ,  C23C14/541 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32862 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L2924/0002 ,  H01L2924/00

摘要： A substrate support assembly and method for supporting a substrate are provided. In at least one embodiment, the support assembly includes a body having one or more fluid conduits disposed therethrough, and a support member disposed on a first end of the body. The support member includes one or more fluid channels formed in an upper surface thereof, wherein each fluid channel is in communication with the one or more of the fluid conduits. The support assembly also includes a cooling medium source in fluid communication with the one or more fluid conduits, and a first electrode having a plurality of holes formed therethrough. The first electrode is disposed on the upper surface of the support member such that each of the plurality of holes is in fluid communication with at least one of the one or more fluid channels formed in the upper surface of the support member.

摘要翻译： 提供了一种用于支撑衬底的衬底支撑组件和方法。 在至少一个实施例中，支撑组件包括具有设置在其中的一个或多个流体导管的主体和设置在主体的第一端上的支撑构件。 支撑构件包括形成在其上表面中的一个或多个流体通道，其中每个流体通道与一个或多个流体导管连通。 支撑组件还包括与一个或多个流体导管流体连通的冷却介质源，以及具有穿过其形成的多个孔的第一电极。 第一电极设置在支撑构件的上表面上，使得多个孔中的每一个与形成在支撑构件的上表面中的一个或多个流体通道中的至少一个流体连通。

公开(公告)号：US06364954B2

公开(公告)日：2002-04-02

申请号：US09211998

申请日：1998-12-14

申请人： Salvador P. Umotoy ,  Steve H. Chiao ,  Anh N. Nguyen ,  Be V. Vo ,  Joel Huston ,  James J. Chen ,  Lawrence Chung-Lai Lei

发明人： Salvador P. Umotoy ,  Steve H. Chiao ,  Anh N. Nguyen ,  Be V. Vo ,  Joel Huston ,  James J. Chen ,  Lawrence Chung-Lai Lei

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/45514 ,  C23C16/45574 ,  C23C16/4584 ,  C23C16/5096

摘要： An apparatus for wafer processing, which comprises a chamber body and a heated liner which are thermally isolated from each other by isolating pins. During wafer processing, e.g., deposition of titanium nitride film by thermal reaction between titanium tetrachloride and ammonia, a wafer substrate is heated to a reaction temperature in the range of 600-700° C. by a heated support pedestal. The chamber liner and the interior chamber walls are maintained at a temperature between 150-250° C. to prevent deposition of undesirable by-products inside the chamber. This facilitates the chamber cleaning procedure, which can be performed using an in-situ chlorine-based process. The excellent thermal isolation between the heated liner and the chamber body allows the chamber exterior to be maintained at a safe operating temperature of 60-65° C. A heated exhaust assembly is also used in conjunction with the process chamber to remove exhaust gases and reaction by-products. External heaters are used to maintain the exhaust assembly at a temperature of about 150-200° C. to minimize undesirable deposits on the interior surfaces of the exhaust assembly.

摘要翻译： 一种用于晶片处理的装置，其包括通过隔离销彼此热隔离的室主体和加热衬套。 在晶片加工期间，例如通过四氯化钛和氨之间的热反应沉积氮化钛膜，通过加热的支撑基座将晶片基板加热至600-700℃范围内的反应温度。 腔室衬里和内部室壁保持在150-250℃之间的温度，以防止在室内沉积不期望的副产物。 这有助于室清洁程序，其可以使用原位氯基方法进行。 加热的衬套和腔体之间的良好的隔热能使室外保持在60-65℃的安全工作温度。加热排气组件还与处理室结合使用以除去废气和反应 副产品。 使用外部加热器将排气组件保持在约150-200℃的温度下，以使排气组件的内表面上的不期望的沉积物最小化。