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    Powder metallurgy crucible for aluminum nitride crystal growth
    3.
    发明申请
    Powder metallurgy crucible for aluminum nitride crystal growth 有权
    粉末冶金坩埚用于氮化铝晶体生长

    公开(公告)号：US20050223967A1

    公开(公告)日：2005-10-13

    申请号：US10822336

    申请日：2004-04-12

    申请人： Leo Schowalter ,  Glen Slack

    发明人： Leo Schowalter ,  Glen Slack

    IPC分类号： C30B1/00 ,  C30B13/00 ,  C30B21/04 ,  C30B23/00 ,  C30B25/00 ,  C30B28/08 ,  C30B28/12 ,  C30B28/14 ,  C30B29/40 ,  C30B35/00

    CPC分类号： C30B29/40 ,  C30B11/002 ,  C30B23/00 ,  C30B23/066 ,  C30B29/403 ,  C30B35/002 ,  Y10T117/10 ,  Y10T117/108 ,  Y10T117/1084

    摘要： A crucible for growing III-nitride (e.g., aluminum nitride) single crystals is provided. The crucible includes an elongated wall structure defining an interior crystal growth cavity. Embodiments include a plurality of grains and a wall thickness of at least about 1.5 times the average grain size. In particular embodiments, the crucible includes first and second layers of grains the first layer including grains forming an inside surface thereof and the second layer being superposed with the first layer. The crucible may be fabricated from tungsten-rhenium (W—Re) alloys; rhenium (Re); tantalum monocarbide (TaC); tantalum nitride (Ta2N); hafnium nitride (HfN); a mixture of tungsten and tantalum (W—Ta); tungsten (W); and combinations thereof.

    摘要翻译： 提供了用于生长III族氮化物（例如氮化铝）单晶的坩埚。 坩埚包括限定内部晶体生长腔的细长壁结构。 实施例包括多个晶粒和至少约平均晶粒尺寸的1.5倍的壁厚。 在具体实施方案中，坩埚包括第一和第二颗粒层，第一层包括形成内表面的颗粒，第二层与第一层重叠。 坩埚可以由钨 - 铼（W-Re）合金制成; 铼（Re）; 钽单体碱（TaC）; 氮化钽（Ta 2 N）; 氮化铪（HfN）; 钨和钽的混合物（W-Ta）; 钨（W）; 及其组合。

    Optical detector having a plurality of matrix layers with cobalt disilicide particles embedded therein
    4.
    发明授权
    Optical detector having a plurality of matrix layers with cobalt disilicide particles embedded therein 失效
    具有嵌入其中的二硅化钴颗粒的多个矩阵层的光学检测器

    公开(公告)号：US5365054A

    公开(公告)日：1994-11-15

    申请号：US115962

    申请日：1993-08-25

    申请人： Robert W. Fathauer ,  Leo Schowalter

    发明人： Robert W. Fathauer ,  Leo Schowalter

    IPC分类号： C30B23/02 ,  H01J40/14

    CPC分类号： C30B23/02 ,  C30B23/002 ,  C30B29/10 ,  Y10S117/918 ,  Y10S438/929

    摘要： Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow particles of metal silicide embedded in a matrix of single crystal epitaxially grown silicon. The particles interact with incident photons by resonant optical absorption at the surface plasmon resonance frequency. Controlling the substrate temperature and deposition rate and time allows the aspect ratio of the particles to be tailored to desired wavelength photons and polarizations. The plasmon energy may decay as excited charge carriers or phonons, either of which can be monitored to indicate the amount of incident radiation at the selected frequency and polarization.

    摘要翻译： 硅和金属在具有大于化学计量的硅的分子束外延系统中共蒸发到硅衬底上，以外延生长嵌入单晶外延生长硅的基体中的金属硅化物的颗粒。 颗粒通过在表面等离子体共振频率处的共振光吸收与入射光子相互作用。 控制衬底温度和沉积速率和时间允许颗粒的纵横比定制成所需的波长光子和极化。 等离子体激元能量可以衰减为激发的电荷载体或声子，其中任一个可以被监测以指示所选频率和极化处的入射辐射的量。

    Method of forming silicon structures with selectable optical characteristics
    7.
    发明授权
    Method of forming silicon structures with selectable optical characteristics 失效
    形成具有可选光学特性的硅结构的方法

    公开(公告)号：US5273617A

    公开(公告)日：1993-12-28

    申请号：US912961

    申请日：1992-07-10

    申请人： Robert W. Fathauer ,  Leo Schowalter

    发明人： Robert W. Fathauer ,  Leo Schowalter

    IPC分类号： C30B23/02

    CPC分类号： C30B23/02 ,  C30B23/002 ,  C30B29/10 ,  Y10S117/918 ,  Y10S438/929

    摘要： Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow particles of metal silicide embedded in a matrix of single crystal epitaxially grown silicon. The particles interact with incident photons by resonant optical absorption at the surface plasmon resonance frequency. Controlling the substrate temperature and deposition rate and time allows the aspect ratio of the particles to be tailored to desired wavelength photons and polarizations. The plasmon energy may decay as excited charge carriers or phonons, either of which can be monitored to indicate the amount of incident radiation at the selected frequency and polarization.

    摘要翻译： 硅和金属在具有大于化学计量的硅的分子束外延系统中共蒸发到硅衬底上，以外延生长嵌入单晶外延生长硅的基体中的金属硅化物的颗粒。 颗粒通过在表面等离子体共振频率处的共振光吸收与入射光子相互作用。 控制衬底温度和沉积速率和时间允许颗粒的纵横比定制成所需的波长光子和极化。 等离子体激元能量可以衰减为激发的电荷载体或声子，其中任一个可以被监测以指示所选频率和极化处的入射辐射的量。

    Method and apparatus for producing large, single-crystals of aluminum nitride
    8.
    发明申请
    Method and apparatus for producing large, single-crystals of aluminum nitride 有权
    用于生产大型单晶氮化铝的方法和装置

    公开(公告)号：US20080006200A1

    公开(公告)日：2008-01-10

    申请号：US11265909

    申请日：2005-11-03

    申请人： Leo Schowalter ,  Glen Slack ,  J. Rojo

    发明人： Leo Schowalter ,  Glen Slack ,  J. Rojo

    IPC分类号： C30B25/00 ,  C30B23/00 ,  C30B28/12

    CPC分类号： C30B23/00 ,  C30B11/003 ,  C30B29/403 ,  H01L33/0075 ,  H01L33/025 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm−2 or less includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than stoichiometric pressure relative to the Al within the crystal growth enclosure, while maintaining the total vapor pressure in the crystal growth enclosure at super-atmospheric pressure. At least one nucleation site is provided in the crystal growth enclosure, and provision is made for cooling the nucleation site relative to other locations in the crystal growth enclosure. The Al and N2 vapor is then deposited to grow single crystalline low dislocation density AlN at the nucleation site. High efficiency ultraviolet light emitting diodes and ultraviolet laser diodes are fabricated on low defect density AlN substrates, which are cut from the low dislocation density AlN crystals. Bulk crystals of ZnO may also be produced using the method.

    摘要翻译： 具有约10,000cm -2以下的位错密度低的AlN的本体单晶的方法和装置包括其中具有Al和N 2源材料的晶体生长封壳 ，能够形成块状晶体。 该装置相对于晶体生长封壳内的Al以大于化学计量压力保持N 2分压，同时在超大气压下保持晶体生长封壳中的总蒸气压。 在晶体生长封壳中提供至少一个成核位置，并且提供相对于晶体生长封壳中的其它位置来冷却成核位置。 然后沉积Al和N 2 H 2蒸气以在成核位点生长单晶低位错密度AlN。 在低缺陷密度AlN衬底上制造高效紫外发光二极管和紫外激光二极管，其从低位错密度AlN晶体切割。 也可以使用该方法制造ZnO的块状晶体。

    METHOD FOR POLISHING A SUBSTRATE SURFACE
    9.
    发明申请
    METHOD FOR POLISHING A SUBSTRATE SURFACE 有权
    抛光基材表面的方法

    公开(公告)号：US20070289946A1

    公开(公告)日：2007-12-20

    申请号：US11363816

    申请日：2006-02-28

    申请人： Leo Schowalter ,  Javier Lopez ,  Juan Rojo ,  Kenneth Morgan

    发明人： Leo Schowalter ,  Javier Lopez ,  Juan Rojo ,  Kenneth Morgan

    IPC分类号： C03C15/00 ,  H01L21/461 ,  H01L21/302

    CPC分类号： H01L21/02024 ,  B24B37/0056 ,  B24B37/044 ,  B24B49/006 ,  H01L21/02052

    摘要： According to one aspect of the invention, an improved process for preparing a surface of substrate is provided wherein the surface of the substrate is prepared for a chemical mechanical polishing (CMP) process, the CMP process is performed on the surface of the substrate, and the surface of the substrate is finished to clear the substrate surface of any active ingredients from the CMP process. Also, an improved substrate produced by the method is provided. According to one aspect of the invention, particular polishing materials and procedures may be used that allow for increased quality of AlN substrate surfaces.

    摘要翻译： 根据本发明的一个方面，提供了一种用于制备衬底表面的改进方法，其中衬底的表面准备用于化学机械抛光（CMP）工艺，在衬底的表面上进行CMP工艺，以及 完成基材的表面以从CMP工艺中清除任何活性成分的基材表面。 此外，提供了通过该方法制备的改进的基板。 根据本发明的一个方面，可以使用允许增加AlN衬底表面质量的特定抛光材料和程序。