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公开(公告)号：US5106778A
公开(公告)日：1992-04-21
申请号：US481860
申请日：1990-02-16
IPC分类号： H01L21/28 , H01L21/335 , H01L21/338 , H01L23/36 , H01L29/06 , H01L29/772 , H01L29/812
CPC分类号： H01L29/66454 , H01L21/28 , H01L23/36 , H01L29/0653 , H01L29/66856 , H01L29/7722 , H01L29/8122 , H01L2924/0002 , Y10S148/026 , Y10S148/05 , Y10S148/088 , Y10S148/142
摘要： A vertical transistor device is characterized by active regions vertically separated by a narrower control region. The control region is defined by conducting layer extensions which extend into a groove within which semiconductor material is regrown during device fabrication. The device is further characterized by regions of isolating material, located horizontally adjacent to the active regions, said isolating material serving to reduce parasitic capacitance and improve thermal distribution within the device, thereby improving frequency and power performance.
摘要翻译： 垂直晶体管器件的特征在于由较窄的控制区域垂直分隔的有源区。 控制区域通过导电层延伸来限定，延伸到在器件制造期间半导体材料重新生长的沟槽中。 该器件的特征还在于隔离材料的区域，水平地邻近有源区域，所述隔离材料用于减小寄生电容并改善器件内的热分布，从而提高频率和功率性能。
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公开(公告)号：US4903089A
公开(公告)日：1990-02-20
申请号：US151395
申请日：1988-02-02
IPC分类号： H01L21/28 , H01L21/335 , H01L21/338 , H01L23/36 , H01L29/06 , H01L29/772 , H01L29/812
CPC分类号： H01L29/66454 , H01L21/28 , H01L23/36 , H01L29/0653 , H01L29/66856 , H01L29/7722 , H01L29/8122 , H01L2924/0002
摘要： A vertical transistor device is characterized by active regions vertically separated by a narrower control region. The control region is defined by conducting layer extensions which extend into a groove within which semiconductor material is regrown during device fabrication. The device is further characterized by regions of isolating material, located horizontally adjacent to the active regions, said isolating material serving to reduce parasitic capacitance and improve thermal distribution within the device, thereby improving frequency and power performance.
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公开(公告)号：US4839310A
公开(公告)日：1989-06-13
申请号：US149125
申请日：1988-01-27
IPC分类号： C23C14/22 , H01L21/285 , H01L21/335 , H01L21/338 , H01L29/06 , H01L29/10 , H01L29/423 , H01L29/778 , H01L29/812
CPC分类号： C23C14/225 , H01L21/28587 , H01L21/28593 , H01L29/0653 , H01L29/0657 , H01L29/1029 , H01L29/42316 , H01L29/66462 , H01L29/66856 , H01L29/7785 , H01L29/7787 , H01L29/7788 , H01L29/7789 , H01L29/8122 , Y10S438/944
摘要： Horizontal and vertical transistors, such as, HEMT/SDHT devices are described with opposed gates for preventing substrate leakage current along with the methods for making same. Also a process for making single gate angled V-HEMT devices is described.
摘要翻译： 描述了HEMT / SDHT器件的水平和垂直晶体管，其具有用于防止衬底漏电流的相对栅极及其制造方法。 还描述了制造单门角V-HEMT器件的过程。
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4.发明授权Permeable base transistor having an electrode configuration for heat dissipation 失效具有用于散热的电极配置的可渗透的基底晶体管
公开(公告)号：US5155561A
公开(公告)日：1992-10-13
申请号：US140820
申请日：1988-01-05
IPC分类号： H01L21/28 , H01L21/335 , H01L29/06 , H01L29/41 , H01L29/737 , H01L29/772
CPC分类号： H01L29/66454 , H01L21/28 , H01L29/0649 , H01L29/0692 , H01L29/41 , H01L29/7371 , H01L29/7722
摘要： The base layer of a power permeable base transistor is formed as comb structures with grating teeth of the combs extending into active regions of semiconductor material. Extended active regions are separated by inactive regions over which collector contacts extend. Large devices have digitated base layers. The comb structures are fabricated by sputtering a uniform layer of tungsten and forming a nickel mask over the tungsten by both X-ray and photolithography techniques. The tungsten exposed by the nickel mask is then etched to leave the comb structures.
摘要翻译： 功率可透的基极晶体管的基极层形成为具有延伸到半导体材料的有源区域中的梳状光栅齿的梳结构。 扩展的活动区域由收集器触点延伸的非活动区域分开。 大型设备具有数字化的基础层。 通过X射线和光刻技术通过溅射均匀的钨层并在钨上形成镍掩模来制造梳状结构。 然后蚀刻由镍掩模曝光的钨离开梳结构。
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5.发明授权Field effect transistors with gate electrodes having Ni and Ti metal layers 有权具有栅电极的场效应晶体管具有Ni和Ti金属层公开(公告)号：US09136111B1
公开(公告)日：2015-09-15
申请号：US13537538
申请日：2012-06-29
申请人： Kanin Chu , Pane-Chane Chao , Kirby B. Nichols , Gabriel Cueva
发明人： Kanin Chu , Pane-Chane Chao , Kirby B. Nichols , Gabriel Cueva
CPC分类号： H01L21/02458 , H01L29/2003 , H01L29/475 , H01L29/7786
摘要： A field effect transistor and method for making such a transistor is provided, the field effect transistor comprising: a gate layer stack comprising a layer of a first metal is disposed proximate to at least one layer of a second metal, wherein the first metal alloys with the second metal to form a shape memory alloy. The shape metal allow may be NiTi, and at the contact plane between the layers, the alloy is formed when the transistor is heated to an elevated temperature.
摘要翻译： 提供了一种用于制造这种晶体管的场效应晶体管和方法，所述场效应晶体管包括：包括第一金属层的栅层叠层设置在至少一层第二金属附近，其中所述第一金属合金与 第二金属形成形状记忆合金。 形状金属允许可以是NiTi，并且在层之间的接触平面处，当晶体管被加热到升高的温度时，形成合金。
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6.发明授权
公开(公告)号：US5105248A
公开(公告)日：1992-04-14
申请号：US463839
申请日：1990-01-11
IPC分类号： G02F1/017 , H01L27/148 , H01L29/765
CPC分类号： B82Y20/00 , G02F1/017 , H01L27/148 , H01L29/765 , G02F2203/12
摘要： An electro-optical device comprising a CCD structure having charge wells, the charges therein being controlled by a modulating signal applied to said CCD structure. A multiple quantum well structure having quantum well regions associated with the charge wells of said CCD structure, the charges in the CCD charge wells determining the value of the electric fields at said quantum well regions and, hence, the electro-absorption effects at said quantum well regions. The intensity of an input electromagnetic wave signal directed through said electro-optical device is thereby spatially modulated by the electro-absorption effects at the quantum well regions of the multiple quantum well structure. A novel CCD structure using quantum well regions to form the charge wells thereof can be used as the CCD structure for controlling the electric fields at the multiple quantum well structure.
摘要翻译： 一种包括具有电荷阱的CCD结构的电光装置，其中的电荷由施加到所述CCD结构的调制信号控制。 具有与所述CCD结构的电荷阱相关联的量子阱区的多量子阱结构，CCD电荷阱中的电荷确定所述量子阱区的电场的值，因此确定在所述量子阱处的电吸收效应 井区。 因此，通过所述电光装置的输入电磁波信号的强度由多量子阱结构的量子阱区域的电吸收效应进行空间调制。 可以使用使用量子阱区形成其电荷阱的新型CCD结构作为用于控制多量子阱结构的电场的CCD结构。
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公开(公告)号：US4985621A
公开(公告)日：1991-01-15
申请号：US336109
申请日：1989-04-11
IPC分类号： G02F3/02 , H01L27/15 , H03K17/785
CPC分类号： G02F3/028 , H01L27/15 , H03K17/785
摘要： An electrooptical switch for modulating a bias light beam in response to a control beam. The switch includes a modulator for modulating the bias beam to produce an output light beam therefrom, the modulator having a variable transmissivity; a detector module for receiving the control beam and generating a control signal therefrom, the detector module exhibiting switching operation in response to the control beam; and an amplifier for amplifiying the control signal to modulate the transmissivity of the modulator.
摘要翻译： 一种用于响应于控制光束调制偏光束的电光开关。 开关包括用于调制偏置光束以从其产生输出光束的调制器，调制器具有可变的透射率; 检测器模块，用于接收所述控制光束并从其产生控制信号，所述检测器模块响应于所述控制光束而呈现切换操作; 以及用于放大控制信号以调制调制器的透射率的放大器。
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8.发明授权公开(公告)号：US07842972B2
公开(公告)日：2010-11-30
申请号：US11632670
申请日：2005-12-01
申请人： Kirby B. Nichols , Robert Actis , Dong Xu , Wendell M. T. Kong
发明人： Kirby B. Nichols , Robert Actis , Dong Xu , Wendell M. T. Kong
IPC分类号： H01L29/24
CPC分类号： H01L29/42376 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02631 , H01L21/314 , H01L29/66462 , H01L29/7784
摘要： A pseudomorphic-high-electron-mobility-transistor (PHEMT) includes a substrate, a low-temperature-grown (LTG) GaAs gate-insulator layer disposed on the substrate, and a gate electrode disposed on the gate-insulator layer.
摘要翻译： 伪高电子迁移率晶体管（PHEMT）包括衬底，设置在衬底上的低温生长（LTG）GaAs栅极 - 绝缘体层以及设置在栅绝缘体层上的栅电极。
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