公开(公告)号：US20210408093A1

公开(公告)日：2021-12-30

申请号：US17470208

申请日：2021-09-09

Applicant: Micron Technology, Inc.

Inventor： Salman Akram

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0288

Abstract: An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

公开(公告)号：US20160372505A1

公开(公告)日：2016-12-22

申请号：US15254745

申请日：2016-09-01

Applicant: Micron Technology, Inc.

Inventor： Salman Akram

IPC: H01L27/146 ,  H01L31/0376 ,  H01L31/0352 ,  H01L31/0288 ,  H01L31/0224

CPC classification number: H01L27/14607 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/03762 ,  H01L31/1804

Abstract: An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

公开(公告)号：US11127769B2

公开(公告)日：2021-09-21

申请号：US16698262

申请日：2019-11-27

Applicant: Micron Technology, Inc.

Inventor： Salman Akram

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0288

Abstract: An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

公开(公告)号：US10446440B2

公开(公告)日：2019-10-15

申请号：US16106611

申请日：2018-08-21

Applicant: Micron Technology, Inc.

Inventor： Salman Akram ,  James M. Wark ,  William Mark Hiatt

IPC: H01L21/768 ,  C23C18/18 ,  C23C18/16 ,  H01L21/288 ,  C23C18/34 ,  C23C18/36

Abstract: A method of activating a metal structure on an intermediate semiconductor device structure toward metal plating. The method comprises providing an intermediate semiconductor device structure comprising at least one first metal structure and at least one second metal structure on a semiconductor substrate. The at least one first metal structure comprises at least one aluminum structure, at least one copper structure, or at least one structure comprising a mixture of aluminum and copper and the at least one second metal structure comprises at least one tungsten structure. One of the at least one first metal structure and the at least one second metal structure is activated toward metal plating without activating the other of the at least one first metal structure and the at least one second metal structure. An intermediate semiconductor device structure is also disclosed.

公开(公告)号：US10181486B2

公开(公告)日：2019-01-15

申请号：US15896686

申请日：2018-02-14

Applicant: Micron Technology, Inc.

Inventor： Salman Akram

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0288

Abstract: An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

公开(公告)号：US09911769B2

公开(公告)日：2018-03-06

申请号：US15254745

申请日：2016-09-01

Applicant: Micron Technology, Inc.

Inventor： Salman Akram

IPC: H01L27/148 ,  H01L27/146 ,  H01L31/0352 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0288

CPC classification number: H01L27/14607 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/03762 ,  H01L31/1804

Abstract: An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

公开(公告)号：US09437762B2

公开(公告)日：2016-09-06

申请号：US14448756

申请日：2014-07-31

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Salman Akram

IPC: H01L27/148 ,  H01L31/0352 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0376 ,  H01L31/18

CPC classification number: H01L27/14607 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/03762 ,  H01L31/1804

Abstract: An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

Abstract translation: 用于图像传感器的升高的光电传感器和形成光电传感器的方法。 光传感器可以具有具有凹陷特征的光传感器，包括但不限于v形，u形或其它成形特征。 具有这种压痕特征的光传感器可以将不被光电传感器的一部分吸收的入射光重定向到光传感器的另一部分以便额外吸收。 此外，升高的光电传感器减小像素单元的尺寸，同时减少泄漏，图像滞后和屏障问题。

公开(公告)号：US20130295766A1

公开(公告)日：2013-11-07

申请号：US13940034

申请日：2013-07-11

Applicant: Micron Technology, Inc.

Inventor： Salman Akram ,  Charles M. Watkins ,  William M. Hiatt ,  David R. Hembree ,  James M. Wark ,  Warren M. Farnworth ,  Mark E. Tuttle ,  Sidney B. Rigg ,  Steven D. Oliver ,  Kyle K. Kirby ,  Alan G. Wood ,  Lu Velicky

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/45 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.

Abstract translation: 公开了一种用于成像器，存储器和其他集成电路应用的透晶片互连，从而消除了对引线接合的需要，使得结合这种互连的器件可堆叠并且实现成像器件的晶片级封装。 此外，实现了更小且更可靠的管芯封装，并且由于信号路径长度的减小，电路寄生（例如，L和R）被减小。

公开(公告)号：US11664396B2

公开(公告)日：2023-05-30

申请号：US17470208

申请日：2021-09-09

Applicant: Micron Technology, Inc.

Inventor： Salman Akram

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0288

CPC classification number: H01L27/14607 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/0352 ,  H01L31/03762 ,  H01L31/035281 ,  H01L31/1804

Abstract: An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

公开(公告)号：US20180358263A1

公开(公告)日：2018-12-13

申请号：US16106611

申请日：2018-08-21

Applicant: Micron Technology, Inc.

Inventor： Salman Akram ,  James M. Wark ,  William Mark Hiatt

IPC: H01L21/768 ,  C23C18/18 ,  C23C18/16 ,  H01L21/288 ,  C23C18/34 ,  C23C18/36

CPC classification number: H01L21/76879 ,  C23C18/1607 ,  C23C18/1637 ,  C23C18/1831 ,  C23C18/1834 ,  C23C18/34 ,  C23C18/36 ,  H01L21/288 ,  H01L21/76898 ,  H01L2924/00013 ,  Y10T428/12528 ,  Y10T428/24917 ,  H01L2224/29099

Abstract: A method of activating a metal structure on an intermediate semiconductor device structure toward metal plating. The method comprises providing an intermediate semiconductor device structure comprising at least one first metal structure and at least one second metal structure on a semiconductor substrate. The at least one first metal structure comprises at least one aluminum structure, at least one copper structure, or at least one structure comprising a mixture of aluminum and copper and the at least one second metal structure comprises at least one tungsten structure. One of the at least one first metal structure and the at least one second metal structure is activated toward metal plating without activating the other of the at least one first metal structure and the at least one second metal structure. An intermediate semiconductor device structure is also disclosed.