公开(公告)号：US09749562B2

公开(公告)日：2017-08-29

申请号：US14941254

申请日：2015-11-13

Applicant: OmniVision Technologies, Inc.

Inventor： Takayuki Goto ,  Yin Qian ,  Chen-wei Lu

IPC: H04N5/225 ,  H04N5/369 ,  H04N5/33 ,  G06F3/01 ,  G02B27/01 ,  G02B27/00 ,  G02F1/1337 ,  H01L27/146

CPC classification number: H04N5/3696 ,  G02B27/0093 ,  G02B27/0172 ,  G02B2027/0138 ,  G02F1/13318 ,  G02F1/133723 ,  G02F1/133784 ,  G02F1/136277 ,  G02F2001/13312 ,  G02F2203/11 ,  G06F3/013 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14649 ,  H01L27/14685 ,  H04N5/33

Abstract: A novel head mounted display includes a display/image sensor. In a particular embodiment the display/image sensor is formed on a single silicon die, which includes display pixels and light sensor pixels. The display pixels and light sensor pixels are each arranged in rows and columns, and the arrays of light sensor pixels and display pixels are interlaced. The center of each light sensor pixel is located between adjacent rows and adjacent columns of display pixels.

公开(公告)号：US20180302579A1

公开(公告)日：2018-10-18

申请号：US15485534

申请日：2017-04-12

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Duli Mao ,  Hiroaki Ebihara ,  Kazufumi Watanabe

IPC: H04N5/355 ,  H04N5/378 ,  H04N5/3745 ,  H01L27/146

CPC classification number: H04N5/3559 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14643 ,  H04N5/37452 ,  H04N5/378

Abstract: A pixel circuit for use in a high dynamic range (HDR) image sensor includes a photodiode and a floating diffusion is disposed in the first semiconductor wafer. A transfer transistor is disposed in the first semiconductor wafer and is adapted to be switched on to transfer the charge carriers photogenerated in the photodiode to the floating diffusion. An in-pixel capacitor is disposed in a second semiconductor wafer. The first semiconductor wafer is stacked with and coupled to the second semiconductor wafer. A dual floating diffusion (DFD) transistor is disposed in the first semiconductor wafer. The in-pixel capacitor is selectively coupled to the floating diffusion through the DFD transistor. The floating diffusion is set to low conversion gain in response to the in-pixel capacitor being coupled to the floating diffusion, and high conversion gain in response to the in-pixel capacitor being decoupled from the floating diffusion.

公开(公告)号：US09967504B1

公开(公告)日：2018-05-08

申请号：US15480833

申请日：2017-04-06

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Gang Chen

IPC: H04N5/374 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/378 ,  H01L27/14605 ,  H01L27/1463 ,  H01L27/14643 ,  H04N5/374

Abstract: A pixel circuit for use in an image sensor includes an unpinned photodiode disposed in a semiconductor material. The unpinned photodiode adapted to photogenerate charge carriers in response to incident light. A floating diffusion is disposed in the semiconductor and coupled to receive the charge carriers photogenerated in the unpinned photodiode. A transfer transistor is disposed in the semiconductor material and coupled between the unpinned photodiode and the floating diffusion. The transfer transistor is adapted to be switched on to transfer the charge carriers photogenerated in the unpinned photodiode to the floating diffusion. A boost capacitor is disposed over a surface of the semiconductor material proximate to the unpinned photodiode. The boost capacitor is coupled to receive a photodiode boost signal while the transfer transistor is switched on to further drive the charge carriers photogenerated in the unpinned photodiode to the floating diffusion.

公开(公告)号：US20180097030A1

公开(公告)日：2018-04-05

申请号：US15284961

申请日：2016-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Vincent Venezia ,  Boyd Albert Fowler ,  Eric A. G. Webster

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/1469

Abstract: An image sensor includes a pixel array having plurality of pixel cells arranged into a plurality of rows and a plurality of columns of pixel cells in a first semiconductor die. A plurality of pixel support circuits are arranged in a second semiconductor die that is stacked and coupled together with the first semiconductor die. A plurality of interconnect lines are coupled between the first and second semiconductor dies, and each one of the plurality of pixel cells is coupled to a corresponding one of the plurality of pixel support circuits through a corresponding one plurality of interconnect lines. A plurality of shield bumps are disposed proximate to corners of the pixel cells in the pixel array and between the first and second semiconductor dies such that each one of the plurality of shield bumps is disposed between adjacent interconnect lines along a diagonal of the pixel array.

公开(公告)号：US20240405039A1

公开(公告)日：2024-12-05

申请号：US18204261

申请日：2023-05-31

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yaxin Zheng ,  Takayuki Goto ,  Rui Wang ,  Kazufumi Watanabe

IPC: H01L27/146

Abstract: An image sensor comprising a semiconductor substrate, a first source region, a second source region, and a shared gate electrode is described. The semiconductor substrate includes a first side and a second side opposite the first side. The first source region and the second source region are each disposed within the semiconductor substrate proximate to the first side. The first source region is separated from the second source region by an isolation structure disposed within the semiconductor substrate between the first source region and the second source region. The shared gate electrode is disposed proximate to the first side of the semiconductor substrate and coupled to the first source region and the second source region to respectively form a first transistor and a second transistor.

公开(公告)号：US20240055463A1

公开(公告)日：2024-02-15

申请号：US17886945

申请日：2022-08-12

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Takayuki Goto

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14689

Abstract: A pixel cell for an image sensor including a first semiconductor substrate, a photodiode, and a transfer gate is described. The first semiconductor substrate includes a first side and a second side. The first side is opposite the second side. The photodiode is disposed within the first semiconductor substrate between the first and the second side. The transfer gate is disposed proximate to the first side of the first semiconductor substrate. The transfer gate includes a planar region. The first side of the semiconductor substrate is disposed between the planar region and the photodiode. A lateral area of the photodiode is less than or equal to a lateral area of the planar region of the transfer gate.

公开(公告)号：US20240355858A1

公开(公告)日：2024-10-24

申请号：US18136762

申请日：2023-04-19

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Takayuki Goto ,  Kazufumi Watanabe ,  Rui Wang

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14636 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L27/14634 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/0615 ,  H01L2224/0616 ,  H01L2224/06505 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/08501

Abstract: A stacked semiconductor device comprising a first semiconductor substrate, a second semiconductor substrate, an insulating medium disposed between the first semiconductor substrate and the second semiconductor substrate, a plurality of connection pads including a first connection pad and a second connection pad, a first connection pad shield structure, and a second connection pad shield structure. The plurality of connection pads is disposed within the insulating medium and configured to provide one or more electrical connections extending between the first semiconductor substrate and the second semiconductor substrate. The first connection pad is disposed between the first connection pad shield structure and the second connection pad shield structure.

公开(公告)号：US20240355765A1

公开(公告)日：2024-10-24

申请号：US18136757

申请日：2023-04-19

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Takayuki Goto ,  Kazufumi Watanabe ,  Rui Wang

IPC: H01L23/00 ,  H01L27/146

CPC classification number: H01L24/06 ,  H01L24/05 ,  H01L24/08 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/0615 ,  H01L2224/0616 ,  H01L2224/06177 ,  H01L2224/06505 ,  H01L2224/06517 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/08501 ,  H01L2224/09505

Abstract: A stacked semiconductor device comprising a first semiconductor substrate, a second semiconductor substrate, an insulating medium disposed between the first semiconductor substrate and the second semiconductor substrate, a plurality of connection pads including a first connection pad and a second connection pad adjacent to the first connection pad, and a first connection pad shield structure disposed within the insulating medium between at least the first connection pad and the second connection pad is described. The plurality of connection pads is disposed within the insulating medium and configured to provide one or more electrical connections extending between the first semiconductor substrate and the second semiconductor substrate.

公开(公告)号：US20240055445A1

公开(公告)日：2024-02-15

申请号：US17886955

申请日：2022-08-12

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Takayuki Goto

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14689

Abstract: An image sensor comprising a semiconductor substrate and pixel cell circuitry is described. The semiconductor substrate includes a first side and a second side opposite the first site. The pixel cell circuitry is disposed proximate to the first side of the semiconductor substrate. The pixel cell circuitry includes an arrangement of individual groups of components, each including a reset gate, a source-follower gate, and a row select gate. The individual groups of components included in the pixel cell circuitry includes a first group and a second group adjacent to the first group, and wherein the source-follower gate of the first group is disposed adjacent to the source-follower of the second group.

公开(公告)号：US10218924B2

公开(公告)日：2019-02-26

申请号：US15485534

申请日：2017-04-12

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Duli Mao ,  Hiroaki Ebihara ,  Kazufumi Watanabe

IPC: H04N5/335 ,  H01L27/146 ,  H04N5/374 ,  H04N5/378 ,  H04N5/355 ,  H04N5/3745

Abstract: A pixel circuit for use in a high dynamic range (HDR) image sensor includes a photodiode and a floating diffusion is disposed in the first semiconductor wafer. A transfer transistor is disposed in the first semiconductor wafer and is adapted to be switched on to transfer the charge carriers photogenerated in the photodiode to the floating diffusion. An in-pixel capacitor is disposed in a second semiconductor wafer. The first semiconductor wafer is stacked with and coupled to the second semiconductor wafer. A dual floating diffusion (DFD) transistor is disposed in the first semiconductor wafer. The in-pixel capacitor is selectively coupled to the floating diffusion through the DFD transistor. The floating diffusion is set to low conversion gain in response to the in-pixel capacitor being coupled to the floating diffusion, and high conversion gain in response to the in-pixel capacitor being decoupled from the floating diffusion.