中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

7 records (took 0.015 seconds)

    Device and method for producing a device
    2.
    发明授权
    Device and method for producing a device 有权

    公开(公告)号：US10204880B2

    公开(公告)日：2019-02-12

    申请号：US15754872

    申请日：2016-08-23

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Barbara Behr ,  Mathias Wendt ,  Marcus Zenger

    IPC: H01L23/485 ,  H01L23/00 ,  H01L33/62 ,  H01L23/532 ,  B23K35/32 ,  B23K35/30

    Abstract: A device and a method for producing a device are disclosed. In an embodiment the device includes a first component, a second component and a connecting element directly arranged between the first component and the second component, wherein the connecting element includes at least a first metal, which is formed as an adhesive layer, a diffusion barrier and a component of a first phase and a second phase of the connecting element, wherein the adhesive layer is arranged on the first component and/or the second component, wherein the first phase and/or the second phase includes, besides the first metal, further metals different from the first metal, wherein a concentration of the first metal in the first phase is greater than a concentration of the first metal in the second phase, and wherein the connecting element includes a layer of a silicide of the first metal.

    Device and method for producing a device
    5.
    发明授权
    Device and method for producing a device 有权

    公开(公告)号：US10431715B2

    公开(公告)日：2019-10-01

    申请号：US15754959

    申请日：2016-08-23

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Barbara Behr ,  Andreas Weimar ,  Mathias Wendt ,  Marcus Zenger

    IPC: H01L33/00 ,  H01L23/00 ,  H01L33/62 ,  H01L33/32

    Abstract: A device and a method for producing a device are disclosed. In an embodiment the device includes a first component; a second component; and a connecting element arranged between the first component and the second component, wherein the connecting element comprises at least a first phase and a second phase, wherein the first phase comprises a first metal having a first concentration, a second metal having a second concentration and a third metal having a third concentration, wherein the second phase comprises the first metal having a fourth concentration, the second metal and the third metal, wherein the first metal, the second metal and the third metal are different from one another and are suitable for reacting at a processing temperature of less than 200° C., and wherein the following applies: c11≥c25 and c11≥c13≥c12.

    Optoelectronic component
    7.
    发明授权
    Optoelectronic component 有权
    光电元件

    公开(公告)号：US09391252B2

    公开(公告)日：2016-07-12

    申请号：US14524914

    申请日：2014-10-27

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Georg Hartung ,  Marcus Zenger ,  Barbara Behr

    IPC: H01L33/62 ,  H01L33/48 ,  H01L33/60 ,  H01L33/38 ,  H01L33/44

    CPC classification number: H01L33/62 ,  H01L33/382 ,  H01L33/44 ,  H01L33/486 ,  H01L33/60

    Abstract: An optoelectronic component comprising a semiconductor body, a first connection layer, an insulation layer and a second connection layer, wherein the semiconductor body has an active region for generating electromagnetic radiation and the second connection layer comprises a first partial layer and a second partial layer is specified, wherein the insulation layer electrically insulates the first connection layer from the second connection layer, the first partial layer is arranged between the second partial layer and the semiconductor body in a vertical direction, in a plan view of the semiconductor body the first connection layer overlaps the first partial layer and is spaced apart from the second partial layer in a lateral direction, and the first connection layer has a first layer thickness and the second partial layer has a second layer thickness, wherein the first layer thickness and the second layer thickness differ from one another at most by 20%.

    Abstract translation: 一种包括半导体本体，第一连接层，绝缘层和第二连接层的光电子元件，其中所述半导体本体具有用于产生电磁辐射的有源区，所述第二连接层包括第一部分层和第二部分层 其中所述绝缘层将所述第一连接层与所述第二连接层电绝缘，所述第一部分层在垂直方向上布置在所述第二部分层和所述半导体本体之间，在所述半导体本体的平面图中，所述第一连接层 与第一部分层重叠并且在横向方向上与第二部分层间隔开，并且第一连接层具有第一层厚度，并且第二部分层具有第二层厚度，其中第一层厚度和第二层厚度 最多相差20％。

Patent Agency Ranking