公开(公告)号：US07365029B2

公开(公告)日：2008-04-29

申请号：US11152501

申请日：2005-06-14

申请人： R. Suryanarayanan Iyer ,  Sean M. Seutter ,  Sanjeev Tandon ,  Errol Antonio C. Sanchez ,  Shulin Wang

发明人： R. Suryanarayanan Iyer ,  Sean M. Seutter ,  Sanjeev Tandon ,  Errol Antonio C. Sanchez ,  Shulin Wang

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02208 ,  H01L21/02271 ,  H01L21/3185

摘要： Embodiments of the invention generally provide a method for depositing a film containing silicon (Si) and nitrogen (N). In one embodiment, the method includes heating a substrate disposed in a processing chamber to a temperature less than about 650 degrees Celsius, flowing a nitrogen-containing gas into the processing chamber, flowing a silicon-containing gas into the processing chamber, and depositing a SiN-containing layer on a substrate. The silicon-containing gas is at least one of a gas identified as NR2—Si(R′2)—Si(R′2)—NR2 (amino(di)silanes), R3—Si—N═N═N (silyl azides), R′3—Si—NR—NR2 (silyl hydrazines) or 1,3,4,5,7,8-hexamethytetrasiliazane, wherein R and R′ comprise at least one functional group selected from the group of a halogen, an organic group having one or more double bonds, an organic group having one or more triple bonds, an aliphatic alkyl group, a cyclical alkyl group, an aromatic group, an organosilicon group, an alkyamino group, or a cyclic group containing N or Si.

摘要翻译： 本发明的实施方案通常提供一种沉积含有硅（Si）和氮（N）的膜的方法。 在一个实施例中，该方法包括将设置在处理室中的基板加热至低于约650摄氏度的温度，使含氮气体流入处理室，使含硅气体流入处理室，并将 衬底上的含SiN层。 含硅气体是被鉴定为NR 2 -Si（R'2）-Si（R'2）-Si（R'2）-Si ）-NR 2（氨基（二）硅烷），R 3 -Si-NNN（甲硅烷基叠氮化物），R'3 -Si- NR-NR 2（甲硅烷基肼）或1,3,4,5,7,8-六甲基四硅氮烷，其中R和R'包含至少一个选自以下的官能团：卤素， 具有一个或多个双键的有机基团，具有一个或多个三键的有机基团，脂肪族烷基，环状烷基，芳族基团，有机硅基团，烷基氨基或含有N或Si的环状基团。

公开(公告)号：US20090111284A1

公开(公告)日：2009-04-30

申请号：US12348382

申请日：2009-01-05

申请人： Yaxin Wang ,  Yuji Maeda ,  Thomas C. Mele ,  Sean M. Seutter ,  Sanjeev Tandon ,  R. Suryanarayanan Iyer

发明人： Yaxin Wang ,  Yuji Maeda ,  Thomas C. Mele ,  Sean M. Seutter ,  Sanjeev Tandon ,  R. Suryanarayanan Iyer

IPC分类号： H01L21/314

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/3185 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7834

摘要： Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes heating a substrate disposed in a processing chamber to a temperature less than about 550 degrees Celsius; flowing a nitrogen and carbon containing chemical comprising (H3C)—N═N—H into the processing chamber; flowing a silicon-containing source chemical with silicon-nitrogen bonds into the processing chamber; and depositing a silicon and nitrogen containing film on the substrate.

摘要翻译： 本发明的实施方案通常提供一种沉积含硅膜的方法。 在一个实施例中，用于在衬底上沉积含硅材料膜的方法包括将设置在处理室中的衬底加热到​​低于约550摄氏度的温度; 将含有（H3C）-N-N-H的含氮和碳的化学品流入处理室; 将含有硅 - 氮键的含硅源化学品流入处理室; 以及在衬底上沉积含硅和氮的膜。

公开(公告)号：US07473655B2

公开(公告)日：2009-01-06

申请号：US11155646

申请日：2005-06-17

申请人： Yaxin Wang ,  Yuji Maeda ,  Thomas C. Mele ,  Sean M. Seutter ,  Sanjeev Tandon ,  R. Suryanarayanan Iyer

发明人： Yaxin Wang ,  Yuji Maeda ,  Thomas C. Mele ,  Sean M. Seutter ,  Sanjeev Tandon ,  R. Suryanarayanan Iyer

IPC分类号： H01L21/31

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45553 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7834

摘要： Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.

摘要翻译： 本发明的实施方案通常提供一种沉积含硅膜的方法。 在一个实施例中，将含​​硅材料膜沉积在基板上的方法包括将含氮和碳的化学品流入沉积室，将含有硅 - 氮键的含硅源化学品流入处理室，并加热基板 置于室内至低于约550摄氏度的温度。 在另一个实施方案中，含硅化学品是三甲基胺，含氮和碳的化学品是（CH 3）3 -N。

公开(公告)号：US07488690B2

公开(公告)日：2009-02-10

申请号：US10885969

申请日：2004-07-06

申请人： R. Suryanarayanan Iyer ,  Andrew M. Lam ,  Yuji Maeda ,  Thomas Mele ,  Jacob W. Smith ,  Sean M. Seutter ,  Sanjeev Tandon ,  Randhir P. Singh Thakur ,  Sunderraj Thirupapuliyur

发明人： R. Suryanarayanan Iyer ,  Andrew M. Lam ,  Yuji Maeda ,  Thomas Mele ,  Jacob W. Smith ,  Sean M. Seutter ,  Sanjeev Tandon ,  Randhir P. Singh Thakur ,  Sunderraj Thirupapuliyur

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/425 ,  H01L21/336

CPC分类号： H01L21/324 ,  H01L29/1054 ,  H01L29/6656 ,  H01L29/7842 ,  H01L29/7843

摘要： An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.

摘要翻译： 组件包括具有形成在彼此之上的氮化物蚀刻停止层的多层氮化物堆叠，每个氮化物蚀刻停止层使用成膜工艺形成。 制造多层氮化物堆叠的方法包括将衬底放置在单个晶片沉积室中，并在沉积之前瞬间热冲击衬底。 在衬底上沉积第一氮化物蚀刻停止层。 在第一氮化物蚀刻停止层上沉积第二氮化物蚀刻停止层。

公开(公告)号：US06884464B2

公开(公告)日：2005-04-26

申请号：US10288358

申请日：2002-11-04

申请人： Lee Luo ,  R. Suryanarayanan Iyer ,  Janardhanan Anand Subramony ,  Errol Antonio C. Sanchez ,  Xiaoliang Jin ,  Aihua Chen ,  Chang-Lian Yan ,  Nobuo Tokai ,  Yuji Maeda ,  Randhir P. Singh Thakur

发明人： Lee Luo ,  R. Suryanarayanan Iyer ,  Janardhanan Anand Subramony ,  Errol Antonio C. Sanchez ,  Xiaoliang Jin ,  Aihua Chen ,  Chang-Lian Yan ,  Nobuo Tokai ,  Yuji Maeda ,  Randhir P. Singh Thakur

IPC分类号： C23C16/24 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  C23C16/22

CPC分类号： C23C16/45512 ,  C23C16/24 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4411 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/3185

摘要： A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.

摘要翻译： 描述了包含硅的硅及其制造方法。 包含硅的膜在衬底上生长。 六氯二硅烷（HCD）源气体是用于形成含硅膜的反应物质之一。 包含硅的膜在10托和350托之间的压力下形成。

公开(公告)号：US07601652B2

公开(公告)日：2009-10-13

申请号：US11157567

申请日：2005-06-21

申请人： Kaushal K. Singh ,  Sean M. Seutter ,  Jacob Smith ,  R. Suryanarayanan Iyer ,  Steve G. Ghanayem ,  Adam Brailove ,  Robert Shydo ,  Jeannot Morin

发明人： Kaushal K. Singh ,  Sean M. Seutter ,  Jacob Smith ,  R. Suryanarayanan Iyer ,  Steve G. Ghanayem ,  Adam Brailove ,  Robert Shydo ,  Jeannot Morin

IPC分类号： H01L21/31

CPC分类号： H01L21/0217 ,  C23C16/0227 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45591 ,  C23C16/482 ,  C23C16/488 ,  C23C16/52 ,  H01L21/0228 ,  H01L21/3185

摘要： Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.

摘要翻译： 本发明的实施方案通常提供使用光激发沉积膜的方法。 光致激发可以用于在沉积之前处理衬底，在沉积期间处理衬底和/或气体，处理沉积膜或用于增强腔室清洁中的至少一种。 在一个实施例中，用于在衬底上沉积硅和含氮膜的方法包括加热设置在处理室中的衬底，产生约1至约10eV的能量束，将能量转移到衬底的表面 ; 使含氮化学物质流入处理室，使含有硅 - 氮的键的含硅化学物质流入处理室，并在衬底上沉积含硅和氮的膜。

公开(公告)号：US20080197125A1

公开(公告)日：2008-08-21

申请号：US11675856

申请日：2007-02-16

申请人： ANQING CUI ,  Sean M. Seutter ,  Jacob W. Grayson ,  R. Suryanarayanan Iyer

发明人： ANQING CUI ,  Sean M. Seutter ,  Jacob W. Grayson ,  R. Suryanarayanan Iyer

IPC分类号： H05B3/10 ,  G06F19/00

CPC分类号： H01L21/67103 ,  H01L21/67109 ,  H01L21/6875

摘要： Embodiments of substrate heating methods and apparatus are provided herein. In one embodiment, a substrate heater is provided including a heater plate having a top surface and an opposing bottom surface, a recess formed in the top surface, the recess having a feature having an upper surface for supporting a substrate, wherein the depth from a bottom surface of the recess to the upper surface of the feature is at least 5 mils. One or more pads may be disposed in the recess for supporting a substrate. The heater plate may have a thickness of about 19 mm. One or more indentations may be formed in the bottom surface of the recess for altering the rate of heat transfer to a portion of a substrate disposed above the indentation during processing. The heater plate may be utilized in a process chamber for performing heat-assisted processes.

摘要翻译： 本文提供了基板加热方法和装置的实施例。 在一个实施例中，提供了一种衬底加热器，其包括具有顶表面和相对底表面的加热器板，在顶表面中形成的凹部，该凹部具有用于支撑衬底的上表面的特征，其中， 该凹槽的底表面至该特征的上表面至少为5密耳。 一个或多个垫可以设置在凹槽中用于支撑基底。 加热器板可以具有约19mm的厚度。 可以在凹部的底表面中形成一个或多个凹口，用于改变在处理期间设置在压痕上方的衬底的一部分的热传递速率。 加热器板可以用在用于执行热辅助工艺的处理室中。

公开(公告)号：US20080145536A1

公开(公告)日：2008-06-19

申请号：US11610424

申请日：2006-12-13

申请人： KANGZHAN ZHANG ,  Sean M. Seutter ,  Jacob Grayson ,  R. Suryanarayanan Iyer

发明人： KANGZHAN ZHANG ,  Sean M. Seutter ,  Jacob Grayson ,  R. Suryanarayanan Iyer

IPC分类号： C23C16/00

CPC分类号： C23C16/34 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/31111 ,  H01L21/318 ,  H01L29/4966 ,  H01L29/6659

摘要： A method and apparatus for depositing silicon boron nitride films is provided. The apparatus comprises a chamber, a gas mixing block connected to the chamber, and separate boron-containing precursor, silicon-containing precursor, and nitrogen-containing precursor gas line systems that are connected to the gas mixing block. Methods of depositing a silicon boron nitride film in the apparatus are provided. In another aspect, a method of depositing a silicon boron nitride film includes reacting a boron-containing precursor, silicon-containing precursor, and nitrogen-containing precursor in a chamber, wherein a ratio of the flow rate of the nitrogen-containing precursor into the chamber to the flow rate of the boron-containing precursor is greater than or equal to about 10.

摘要翻译： 提供了一种用于沉积硅氮化硼膜的方法和装置。 所述装置包括连接到所述室的室，气体混合块和连接到所述气体混合块的分离的含硼前体，含硅前体和含氮前体气体管线系统。 提供了在该装置中沉积硅氮化硼膜的方法。 在另一方面，沉积硅氮化硼膜的方法包括在室中使含硼前体，含硅前体和含氮前体反应，其中含氮前体的流速与 所述含硼前体的流速大于或等于约10。

公开(公告)号：US09892941B2

公开(公告)日：2018-02-13

申请号：US12485160

申请日：2009-06-16

申请人： Anqing Cui ,  Binh Tran ,  Alexander Tam ,  Jacob W. Smith ,  R. Suryanarayanan Iyer ,  Joseph Yudovsky ,  Sean M. Seutter

发明人： Anqing Cui ,  Binh Tran ,  Alexander Tam ,  Jacob W. Smith ,  R. Suryanarayanan Iyer ,  Joseph Yudovsky ,  Sean M. Seutter

IPC分类号： H05B3/68 ,  H01L21/67

CPC分类号： H01L21/67103 ,  H01L21/67248 ,  H05B3/68

摘要： Apparatus, reactors, and methods for heating substrates are disclosed. The apparatus comprises a stage comprising a body and a surface having an area to support a substrate, a shaft coupled to the stage, a first heating element disposed within a central region of the body of the stage, and at least second and third heating elements disposed within the body of the stage, the at least second and third heating elements each partially surrounding the first heating element and wherein the at least second and third heating elements are circumferentially adjacent to each other.

公开(公告)号：US20090314762A1

公开(公告)日：2009-12-24

申请号：US12485160

申请日：2009-06-16

申请人： Anqing Cui ,  Binh Tran ,  Alexander Tam ,  Jacob W. Smith ,  R. Suryanarayanan Iyer ,  Joseph Yudovsky ,  Sean M. Seutter

发明人： Anqing Cui ,  Binh Tran ,  Alexander Tam ,  Jacob W. Smith ,  R. Suryanarayanan Iyer ,  Joseph Yudovsky ,  Sean M. Seutter

IPC分类号： H05B3/68

CPC分类号： H01L21/67103 ,  H01L21/67248 ,  H05B3/68

摘要： Apparatus, reactors, and methods for heating substrates are disclosed. The apparatus comprises a stage comprising a body and a surface having an area to support a substrate, a shaft coupled to the stage, a first heating element disposed within a central region of the body of the stage, and at least second and third heating elements disposed within the body of the stage, the at least second and third heating elements each partially surrounding the first heating element and wherein the at least second and third heating elements are circumferentially adjacent to each other.

摘要翻译： 公开了用于加热基底的装置，反应器和方法。 该装置包括一个舞台，包括主体和具有支撑衬底的区域的表面，耦合到舞台的轴，设置在舞台的身体的中心区域内的第一加热元件，以及至少第二和第三加热元件 设置在所述台体内，所述至少第二和第三加热元件各自部分地围绕所述第一加热元件，并且其中所述至少第二和第三加热元件彼此周向相邻。