Megasonic cleaning system
    3.
    发明授权
    Megasonic cleaning system 失效
    超声波清洗系统

    公开(公告)号:US5247954A

    公开(公告)日:1993-09-28

    申请号:US791094

    申请日:1991-11-12

    IPC分类号: B08B3/12 H01L21/00

    CPC分类号: H01L21/67057 B08B3/12

    摘要: Megasonic cleaning system for use in cleaning of electronic or other items such as semiconductor wafers or semiconductor substrates in a wafer carrier. Formed piezoelectric transducers are bonded to a tubular envelope at a low temperature and are excited at a first frequency or a second higher frequency for cleaning of items in a cleaning tank. A novel sealing assembly accommodates tubular envelopes of varying diameters.

    摘要翻译: 用于清洁晶片载体中的诸如半导体晶片或半导体衬底的电子或其它物品的超声波清洗系统。 形成的压电换能器在低温下被结合到管状外壳上,并以第一频率或第二较高频率被激发以清洁清洗槽中的物品。 新颖的密封组件适应不同直径的管状包络。

    Chemical processing system for maintaining concentration of
semiconductor processing solution
    4.
    发明授权
    Chemical processing system for maintaining concentration of semiconductor processing solution 失效
    用于保持半导体处理溶液浓度的化学处理系统

    公开(公告)号:US5437710A

    公开(公告)日:1995-08-01

    申请号:US356048

    申请日:1994-12-14

    摘要: A chemical processing system for generating ultra-pure chemicals near the site of use. The system includes in series a supply of chemical or the site of use which may be a tank or drum and may be a point of use for semiconductor manufacturing, a concentrate sensor, a pump, a filter, a reactor vessel, and an optional heat exchanger, all connected by Kel-F tubing. Sources of pure filtered gas connect to the reactor vessel. An ozone generator can likewise connect to the reactor vessel. An optional isolation coil can likewise connect between the gas source and the reactor vessel.

    摘要翻译: 用于在使用场所附近生成超纯化学品的化学处理系统。 该系统包括一系列化学品或使用场所,其可以是罐或桶,并且可以是半导体制造的使用点,浓缩物传感器,泵,过滤器,反应器容器和可选的热量 交换器,全部由Kel-F管连接。 纯过滤气体的来源连接到反应堆容器。 臭氧发生器也可以连接到反应堆容器。 可选的隔离线圈也可以连接在气体源和反应器容器之间。

    Process for etching oxide films in a sealed photochemical reactor
    5.
    发明授权
    Process for etching oxide films in a sealed photochemical reactor 失效
    在密封的光化学反应器中蚀刻氧化膜的方法

    公开(公告)号:US5234540A

    公开(公告)日:1993-08-10

    申请号:US876043

    申请日:1992-04-30

    IPC分类号: H01L21/302 H01L21/311

    CPC分类号: H01L21/31116

    摘要: A process for etching oxide films on the semiconductor, or other substrates, in a sealed photochemical reactor. Anhydrous hydrogen fluoride (AHF) gas, or other halogen containing gases, and alcohol vapor carried by an inert gas, such as nitrogen, are passed over the oxides to be etched. The UV radiation shines through a window, which passes the UV radiation onto the oxides while the gases are flowing, and enhances and controls etching of the oxides. The UV window is impervious to the etch process gases. The etch rates are modified, providing for improved oxide etching characteristics.

    摘要翻译: 一种用于在密封的光化学反应器中在半导体或其它基底上蚀刻氧化膜的方法。 无水氟化氢(AHF)气体或其它含卤素气体,以及惰性气体如氮气携带的醇蒸气通过待蚀刻的氧化物。 UV辐射通过窗口照射,该窗口在气体流动时将UV辐射传递到氧化物上,并增强和控制氧化物的蚀刻。 UV窗口不受蚀刻工艺气体的影响。 修改蚀刻速率,提供改善的氧化物蚀刻特性。

    Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor
    6.
    发明授权
    Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor 失效
    快速热处理反应器中均匀直接辐射加热的方法和装置

    公开(公告)号:US06391804B1

    公开(公告)日:2002-05-21

    申请号:US09590824

    申请日:2000-06-09

    IPC分类号: H01L21324

    CPC分类号: H01L21/67115 H01L21/67109

    摘要: Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor where uniformity of temperature across the width and breadth of a semiconductor wafer is achieved by placement of a dome-shaped thermal insert in close proximity to a semiconductor wafer in process. Thermal energy is absorbed by the thermal insert from the semiconductor wafer at a high rate where the spacing between the thermal insert and semiconductor wafer is at a minimum and at a gradually reduced rate where the spacing between the thermal insert and semiconductor wafer is gradually increased. A guard ring is also incorporated to negate bottom side reflective thermal energy exposure.

    摘要翻译: 在快速热处理反应器中用于均匀直接辐射加热的方法和装置,其中半导体晶片的宽度和宽度上的温度均匀度通过将半圆形热插入件放置在非常接近半导体晶片的过程中来实现。 热能被热插入物从半导体晶片以高速率吸收,其中热插入物和半导体晶片之间的间隔处于最小并且逐渐降低的速率,其中热插入物和半导体晶片之间的间隔逐渐增加。 还结合了保护环以抵消底部反射热能暴露。

    High frequency sonic substrate processing module
    7.
    发明授权
    High frequency sonic substrate processing module 失效
    高频声波底物处理模块

    公开(公告)号:US5017236A

    公开(公告)日:1991-05-21

    申请号:US396116

    申请日:1989-08-21

    IPC分类号: B08B3/12 H01L21/00

    摘要: A single substrate high frequency sonic processing module uses a substrate chamber dimensionally sized to the substrate for immersing the substrate in processing solution. Sonic wave permeable membranes form two ends of the substrate chamber along a sonic wave path therethrough. A sonic wave generated by a transducer external to the substrate chamber, travels through sonic wave conducting liquid in contact with the first membrane, external to the substrate chamber. The liquid is shaped by a sonic wave guide of continuously diminishing cross sectional area along the sonic wave path therethrough, thus intensifying and concentrating the sonic wave entering the substrate chamber. The sonic wave passes through the second membrane to a sonic absorbing and dissipating ante chamber. A method for sonic processing of substrates is disclosed. The individual sonic processing modules are combined into a single system for simultaneously processing plural substrates. The minimal sized substrate chamber provides effective processing with minimal processing solution, minimizing cost and disposal. The shaped wave guide concentrates and intensifies the sonic wave guide to provide enhanced processing.

    摘要翻译: 单个基板高频声波处理模块使用尺寸适合于基板的基板室,将基板浸入处理溶液中。 声波透过膜沿着声波通道从基底腔的两端形成。 由衬底室外部的换能器产生的声波通过与衬底室外部的第一膜接触的声波导电液体传播。 液体由声波引导器形成,声波导体沿着声波通道的横截面积不断减小,从而增强和集中进入基底腔室的声波。 声波通过第二个膜通过声波吸收和消散的前室。 公开了一种用于基底的声处理的方法。 单独的声处理模块被组合成单个系统以同时处理多个基板。 最小尺寸的基板腔室提供有效的处理,最少的处理解决方案,最大限度地降低成本和 成形波导集中和强化声波引导,以提供增强的处理。

    Methods for producing textured electrode based energy storage device
    9.
    发明授权
    Methods for producing textured electrode based energy storage device 失效
    用于生产基于感应电极的储能装置的方法

    公开(公告)号:US08529746B2

    公开(公告)日:2013-09-10

    申请号:US13018586

    申请日:2011-02-01

    IPC分类号: H01M4/139 C25D9/02

    摘要: This method enables the use of nanowire or nano-textured forms of Polyaniline and other conductive polymers in energy storage components. The delicate nature of these very high surface area materials are preserved during the continuous electrochemical synthesis, drying, solvent application and physical assembly. The invention also relates to a negative electrode that is comprised of etched, lithiated aluminum that is safer and lighter weight than conventional carbon based lithium-ion negative electrodes. The invention provides for improved methods for making negative and positive electrodes and for energy storage devices containing them. The invention provides sufficient stability in organic solvent and electrolyte solutions, where the prior art processes commonly fail. The invention further provides stability during repetitive charge and discharge. The invention also provides for novel microstructure protecting support membranes to be used in an energy storage device.

    摘要翻译: 该方法能够在能量存储组件中使用纳米线或纳米纹理形式的聚苯胺和其它导电聚合物。 在连续电化学合成,干燥,溶剂应用和物理组装过程中,这些非常高的表面积材料的微妙性质得以保留。 本发明还涉及一种负极,其由蚀刻的锂化铝组成,其比常规碳基锂离子负极更安全和更轻。 本发明提供了用于制造负极和正极以及包含它们的储能装置的改进方法。 本发明在有机溶剂和电解质溶液中提供足够的稳定性,其中现有技术的方法通常失效。 本发明进一步提供重复充电和放电期间的稳定性。 本发明还提供了用于能量存储装置中的用于新颖的微结构保护支撑膜。