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    HIGH-EFFICIENCY LONG-WAVELENGTH LIGHT-EMITTING DEVICE
    1.
    发明申请
    HIGH-EFFICIENCY LONG-WAVELENGTH LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20190296187A1

    公开(公告)日：2019-09-26

    申请号：US16304387

    申请日：2017-05-23

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Hong Jae YOO ,  Hyo Shik CHOI ,  Hyung Ju LEE

    IPC: H01L33/06 ,  H01L33/32 ,  H01L33/14 ,  H01L33/00

    Abstract: A long-wavelength light emitting device is disclosed. The long-wavelength light emitting device comprises: a first conductive semi-conductor layer; an active layer that is located on the first conductive semi-conductor layer and that has a quantum well structure; and a second conductive semi-conductor layer that is located on the active layer. The active layer comprises: one or more well layers including a nitride-based semi-conductor having 21% or more In; two barrier layers located in upper and lower parts of the well layers, and located between the well layers and the barrier layers, wherein the upper capping layers have a bigger band-gap energy relative to the barrier layers, and the upper capping layers and the well layers are in contact.

    LIGHT EMITTING MODULE AND SYSTEM INCLUDING THE SAME
    3.
    发明公开
    LIGHT EMITTING MODULE AND SYSTEM INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240304605A1

    公开(公告)日：2024-09-12

    申请号：US18585828

    申请日：2024-02-23

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Hyo Shik CHOI

    IPC: H01L25/075 ,  H01L25/16 ,  H01L33/52 ,  H01L33/60

    CPC classification number: H01L25/0753 ,  H01L25/167 ,  H01L33/52 ,  H01L33/60

    Abstract: A light emitting module includes a light emitting device. The light emitting device includes: a substrate; a first window layer supplying electrons; a second window layer supplying holes; an active layer disposed between the first window layer and the second window layer; a first ohmic electrode electrically connected to the first window layer; and a second ohmic electrode electrically connected to the second window layer. The first window layer includes a first high-level doped layer having a higher doping level applied than other portions thereof. The first ohmic electrode is electrically connected to the first high-level doped layer.

    NEAR UV LIGHT EMITTING DEVICE
    5.
    发明申请
    NEAR UV LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20160225950A1

    公开(公告)日：2016-08-04

    申请号：US15096252

    申请日：2016-04-11

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Chang Suk HAN ,  Hwa Mok KIM ,  Hyo Shik CHOI ,  Mi So KO ,  A Ram Cha LEE

    IPC: H01L33/14 ,  H01L33/32 ,  H01L33/06

    CPC classification number: H01L33/14 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32

    Abstract: Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area.

    LIGHT EMITTING DEVICE AND DISPLAY DEVICE HAVING THE SAME
    6.
    发明申请
    LIGHT EMITTING DEVICE AND DISPLAY DEVICE HAVING THE SAME 有权

    公开(公告)号：US20240379910A1

    公开(公告)日：2024-11-14

    申请号：US18656810

    申请日：2024-05-07

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Yeon Kyu PARK ,  Hyo Shik CHOI

    IPC: H01L33/40 ,  H01L33/30

    Abstract: A light emitting device according to an embodiment includes: a substrate; a first conductivity type window layer and a mesa disposed on one region of the first conductivity type window layer, in which the mesa is a semiconductor stack including an active layer and a second conductivity type window layer; an adhesive layer disposed between the semiconductor stack and the substrate; a first ohmic layer electrically connected to the first conductivity type window layer; a second ohmic layer electrically connected to the second conductivity type window layer; and a first electrode pad and a second electrode pad disposed on the semiconductor stack to face the substrate, and electrically connected to the first ohmic layer and the second ohmic layer, respectively.

    METHOD OF FABRICATING A NITRIDE SUBSTRATE
    8.
    发明申请
    METHOD OF FABRICATING A NITRIDE SUBSTRATE 有权
    制备氮化物基板的方法

    公开(公告)号：US20150364319A1

    公开(公告)日：2015-12-17

    申请号：US14833732

    申请日：2015-08-24

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Ki Yon PARK ,  Hwa Mok KIM ,  Chang Suk HAN ,  Hyo Shik CHOI ,  Mi So KO

    IPC: H01L21/02 ,  H01L21/308 ,  H01L29/20 ,  H01L21/306

    CPC classification number: H01L21/0254 ,  C30B25/00 ,  C30B25/02 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02002 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/30621 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/2003

    Abstract: A method of fabricating a nitride substrate including preparing a growth substrate and disposing a sacrificial layer on the growth substrate. The sacrificial layer includes a nitride horizontal etching layer including an indium-based nitride and an upper nitride sacrificial layer formed on the nitride horizontal etching layer. The method of fabricating the nitride substrate also includes horizontally etching the nitride horizontal etching layer, forming at least one etching hole at least partially through the upper nitride sacrificial layer such that the at least one etching hole expands in the nitride horizontal etching layer in a horizontal direction during horizontal etching of the nitride horizontal etching layer, forming a nitride epitaxial layer on the upper nitride sacrificial layer by hydride vapor phase epitaxy (HVPE) and separating the nitride epitaxial layer from the growth substrate at the nitride horizontal etching layer.

    Abstract translation: 一种制造氮化物衬底的方法，包括制备生长衬底并在生长衬底上设置牺牲层。 牺牲层包括氮化物水平蚀刻层，其包括形成在氮化物水平蚀刻层上的铟基氮化物和上部氮化物牺牲层。 制造氮化物衬底的方法还包括水平蚀刻氮化物水平蚀刻层，至少部分地通过上部氮化物牺牲层形成至少一个蚀刻孔，使得至少一个蚀刻孔在氮化物水平蚀刻层中在水平方向上扩展 在氮化物水平蚀刻层的水平蚀刻期间，通过氢化物气相外延（HVPE）在上部氮化物牺牲层上形成氮化物外延层，并在氮化物水平蚀刻层从生长衬底分离氮化物外延层。

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