公开(公告)号：US20210151628A1

公开(公告)日：2021-05-20

申请号：US17157600

申请日：2021-01-25

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu KIM ,  Min Woo KANG ,  Se Hee OH ,  Hyoung Jin LIM

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/44

Abstract: A chip-scale package type light emitting diode includes a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer. The openings of the dielectric layer include openings that have different sizes from one another.

公开(公告)号：US20200176636A1

公开(公告)日：2020-06-04

申请号：US16782969

申请日：2020-02-05

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon CHAE ,  Joon Sup LEE ,  Daewoong SUH ,  Won Young ROH ,  Min Woo KANG ,  Jong Min JANG ,  Se Hee OH ,  Hyun A KIM

IPC: H01L33/38

Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

公开(公告)号：US20220208851A1

公开(公告)日：2022-06-30

申请号：US17697410

申请日：2022-03-17

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu KIM ,  So Ra LEE ,  Yeo Jin YOON ,  Jae Kwon KIM ,  Joon Sup LEE ,  Min Woo KANG ,  Se Hee OH ,  Hyun A. KIM ,  Hyoung Jin LIM

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/64 ,  H01L33/36 ,  H01L33/62

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

公开(公告)号：US20200295229A1

公开(公告)日：2020-09-17

申请号：US16885536

申请日：2020-05-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu KIM ,  Min Woo KANG ,  Se Hee OH ,  Hyoung Jin LIM

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/44

Abstract: A chip-scale package type light emitting diode includes: a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer, in which the openings of the dielectric layer include a narrow and elongated bar-shaped opening adjacent to at least one of the first openings of the lower insulation layer.

公开(公告)号：US20200098949A1

公开(公告)日：2020-03-26

申请号：US16660460

申请日：2019-10-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Joon Sup LEE ,  Won Young ROH ,  Min Woo KANG ,  Jong Min JANG ,  Hyun A KIM ,  Daewoong SUH

IPC: H01L33/44 ,  H01L23/00 ,  H01L33/24 ,  H01L33/14 ,  H01L33/10 ,  H01L33/62 ,  H01L33/54 ,  H01L33/40 ,  H01L27/15 ,  H01L33/20 ,  H01L33/38 ,  H01L25/075 ,  H01L33/08

Abstract: A light emitting diode apparatus includes a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a mesa, a lower insulating layer, a first pad and a second pad. The substrate has a first surface and a second surface opposite to the first surface. The first conductivity type semiconductor layer is disposed on the first surface of the substrate. The mesa is disposed on the first conductive semiconductor layer and has an active layer and the second conductive semiconductor layer. A peripheral edge of the first conductive semiconductor layer is exposed. The lower insulating layer covers the mesa and the first conductive semiconductor layer and has a plurality of first openings exposing the first conductive semiconductor layer along a peripheral edge of the substrate.

公开(公告)号：US20190189867A1

公开(公告)日：2019-06-20

申请号：US16266717

申请日：2019-02-04

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Jong Min JANG ,  Won Young ROH ,  Dae Woong SUH ,  Min Woo KANG ,  Joon Sub LEE ,  Hyun A. KIM ,  Kyoung Wan KIM ,  Chang Yeon KIM

IPC: H01L33/50 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L33/38 ,  H01L33/40 ,  H01L33/20

Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.

公开(公告)号：US20150325752A1

公开(公告)日：2015-11-12

申请号：US14807290

申请日：2015-07-23

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon CHAE ,  Chung Hoon LEE ,  Daewoong SUH ,  Jong Min JANG ,  Joon Sup LEE ,  Won Young ROH ,  Min Woo KANG ,  Hyun A KIM ,  Seon Min BAE

IPC: H01L33/44 ,  H01L33/00 ,  H01L33/20

CPC classification number: H01L33/44 ,  H01L27/153 ,  H01L33/005 ,  H01L33/007 ,  H01L33/08 ,  H01L33/20 ,  H01L33/387 ,  H01L33/405 ,  H01L2933/0025

Abstract: A light emitting device having a wide beam angle and a method of fabricating the same. The light emitting device includes a light emitting structure, a substrate disposed on the light emitting structure, and an anti-reflection layer covering side surfaces of the light emitting structure and the substrate, and at least a portion of an upper surface of the substrate is exposed.

公开(公告)号：US20210005785A1

公开(公告)日：2021-01-07

申请号：US17024167

申请日：2020-09-17

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon CHAE ,  Joon Sup LEE ,  Daewoong SUH ,  Won Young ROH ,  Min Woo KANG ,  Jong Min JANG ,  Se Hee OH ,  Hyun A KIM

IPC: H01L33/38

Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

公开(公告)号：US20200295232A1

公开(公告)日：2020-09-17

申请号：US16889525

申请日：2020-06-01

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Jong Min JANG ,  Won Young ROH ,  Dae Woong SUH ,  Min Woo KANG ,  Joon Sub LEE ,  Hyun A. KIM

IPC: H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/00 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L33/12 ,  H01L33/06 ,  H01L33/32 ,  H01L33/20 ,  H01L33/38

Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.

公开(公告)号：US20190341527A1

公开(公告)日：2019-11-07

申请号：US16511921

申请日：2019-07-15

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Jong Min JANG ,  Won Young ROH ,  Dae Woong SUH ,  Min Woo KANG ,  Joon Sub LEE ,  Hyun A. KIM

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/20 ,  H01L33/44 ,  H01L33/46 ,  H01L33/00 ,  H01L33/32 ,  H01L33/06 ,  H01L33/12 ,  H01L33/62 ,  H01L33/60 ,  H01L33/48

Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.