公开(公告)号：US11906569B2

公开(公告)日：2024-02-20

申请号：US17519679

申请日：2021-11-05

Applicant: SHOWA DENKO K.K.

Inventor： Koichi Murata ,  Isaho Kamata ,  Hidekazu Tsuchida ,  Akira Miyasaka

IPC: G01R1/06 ,  G01R31/26 ,  H01L21/66 ,  G01R1/067 ,  C30B29/36 ,  C23C16/32 ,  C23C16/52 ,  C30B25/16 ,  G01R31/265 ,  C30B35/00

CPC classification number: G01R31/2601 ,  C23C16/325 ,  C23C16/52 ,  C30B25/16 ,  C30B29/36 ,  G01R1/06783 ,  G01R31/2648 ,  G01R31/2656 ,  H01L22/20 ,  C30B35/00

Abstract: A semiconductor wafer evaluation apparatus brings a contact maker (mercury liquefied at room temperature), as a Schottky electrode, into contact with a semiconductor wafer, intermittently applies a voltage from a pulse power supply, and evaluates the state (kinds, density) of point defects by an evaluation means based on the status of the electrostatic capacity of the semiconductor wafer. In this manner, the state (kinds, density) of the point defects in the plane of a large-diameter semiconductor wafer is directly evaluated using a large table.

公开(公告)号：US10896831B2

公开(公告)日：2021-01-19

申请号：US16118734

申请日：2018-08-31

Applicant: NUFLARE TECHNOLOGY, INC. ,  SHOWA DENKO K.K. ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

Inventor： Kunihiko Suzuki ,  Naohisa Ikeya ,  Keisuke Fukada ,  Masahiko Ito ,  Isaho Kamata ,  Hidekazu Tsuchida ,  Hiroaki Fujibayashi ,  Hideyuki Uehigashi ,  Masami Naito ,  Kazukuni Hara ,  Hirofumi Aoki ,  Takahiro Kozawa

IPC: C23C16/40 ,  H01L21/67 ,  H01L21/205 ,  C23C16/455 ,  B01F3/02 ,  H01L21/02

Abstract: A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.

公开(公告)号：US10262863B2

公开(公告)日：2019-04-16

申请号：US15534317

申请日：2015-12-08

Applicant: SHOWA DENKO K.K. ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

Inventor： Keisuke Fukada ,  Masahiko Ito ,  Isaho Kamata ,  Hidekazu Tsuchida ,  Hideyuki Uehigashi ,  Hiroaki Fujibayashi ,  Masami Naito ,  Kazukuni Hara ,  Takahiro Kozawa ,  Hirofumi Aoki

IPC: H01L21/205 ,  C23C16/32 ,  C30B25/14 ,  C23C16/42 ,  C23C16/455 ,  C30B29/36 ,  C30B25/18 ,  C30B25/20 ,  H01L21/02

Abstract: A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.

公开(公告)号：US11600538B2

公开(公告)日：2023-03-07

申请号：US17456506

申请日：2021-11-24

Applicant: SHOWA DENKO K.K.

Inventor： Naoto Ishibashi ,  Koichi Murata ,  Hidekazu Tsuchida

IPC: H01L21/02 ,  H01L21/66 ,  C23C16/32

Abstract: A SiC epitaxial wafer according to an embodiment includes: a SiC substrate; and a SiC epitaxial layer formed on a first surface of the SiC substrate. The in-plane uniformity of a density of Z1/2 centers of the SiC epitaxial layer is 5% or less.

公开(公告)号：US20180374721A1

公开(公告)日：2018-12-27

申请号：US16118734

申请日：2018-08-31

Applicant: NUFLARE TECHNOLOGY, INC. ,  SHOWA DENKO K.K. ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

Inventor： Kunihiko Suzuki ,  Naohisa Ikeya ,  Keisuke Fukada ,  Masahiko Ito ,  Isaho Kamata ,  Hidekazu Tsuchida ,  Hiroaki Fujibayashi ,  Hideyuki Uehigashi ,  Masami Naito ,  Kazukuni Hara ,  Hirofumi Aoki ,  Takahiro Kozawa

IPC: H01L21/67 ,  H01L21/205 ,  C23C16/455

Abstract: A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.

公开(公告)号：US11107892B2

公开(公告)日：2021-08-31

申请号：US16616780

申请日：2018-04-19

Applicant: SHOWA DENKO K.K. ,  Central Research Institute of Electric Power Industry ,  DENSO CORPORATION

Inventor： Keisuke Fukada ,  Naoto Ishibashi ,  Akira Bando ,  Masahiko Ito ,  Isaho Kamata ,  Hidekazu Tsuchida ,  Kazukuni Hara ,  Masami Naito ,  Hideyuki Uehigashi ,  Hiroaki Fujibayashi ,  Hirofumi Aoki ,  Toshikazu Sugiura ,  Katsumi Suzuki

IPC: H01L29/16 ,  C23C16/42 ,  C30B29/36 ,  H01L21/02

Abstract: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.