公开(公告)号：US20170244010A1

公开(公告)日：2017-08-24

申请号：US15362966

申请日：2016-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-sub KIM ,  Yong-il KIM ,  Dong-gun LEE ,  Kyung-wook HWANG ,  Jin-sub LEE ,  Min-gyeong GWON

IPC: H01L33/58 ,  H01L33/50 ,  G02B5/20 ,  H01L33/32 ,  H01L33/60 ,  H01L33/00 ,  H01L33/56 ,  H01L33/06

CPC classification number: H01L33/58 ,  G02B5/208 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32 ,  H01L33/44 ,  H01L33/504 ,  H01L33/508 ,  H01L33/56 ,  H01L33/60 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0058

Abstract: A light-emitting device package includes a plurality of luminescent structures arranged spaced apart from each other in a horizontal direction, an intermediate layer on the plurality of luminescent structures, and wavelength conversion layers on the intermediate layer, the wavelength conversion layers vertically overlapping separate, respective luminescent structures of the plurality of luminescent structures. The intermediate layer may include a plurality of layers, the plurality of layers associated with different refractive indexes, respectively. The intermediate layer may include a plurality of sets of holes, each set of holes may include a separate plurality of holes, and each wavelength conversion layer may vertically overlap a separate set of holes on the intermediate layer.

公开(公告)号：US20190067257A1

公开(公告)日：2019-02-28

申请号：US16178025

申请日：2018-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-hye YEON ,  Wan-tae LIM ,  Young-soo PARK ,  Jung-sub KIM ,  Jin-sub LEE ,  Ha-nul YOO ,  Hye-seok NOH

IPC: H01L25/075 ,  H01L33/50

Abstract: A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer.

公开(公告)号：US20200066689A1

公开(公告)日：2020-02-27

申请号：US16662714

申请日：2019-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-hye YEON ,  Wan-tae LIM ,  Young-soo PARK ,  Jung-sub KIM ,  Jin-sub LEE ,  Ha-nul YOO ,  Hye-seok NOH

IPC: H01L25/075 ,  H01L33/50

Abstract: A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer.

公开(公告)号：US20140183546A1

公开(公告)日：2014-07-03

申请号：US13973720

申请日：2013-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-sub KIM ,  Jin-sub LEE ,  Cheol-soo SONE ,  Kyung-wook HWANG

IPC: H01L33/32

CPC classification number: H01L33/38 ,  H01L33/405

Abstract: A nitride-based semiconductor light-emitting device includes an n-type nitride-based semiconductor layer, an active layer, a p-type nitride-based semiconductor layer, an ohmic contact layer covering a portion of the p-type nitride-based semiconductor layer upper surface, and a p electrode including a first portion contacting the p-type nitride-based semiconductor layer and a second portion contacting the ohmic contact layer.

Abstract translation: 氮化物系半导体发光元件包括n型氮化物系半导体层，有源层，p型氮化物系半导体层，覆盖p型氮化物系半导体的一部分的欧姆接触层 以及包括与p型氮化物类半导体层接触的第一部分和与欧姆接触层接触的第二部分的p电极。

公开(公告)号：US20140014897A1

公开(公告)日：2014-01-16

申请号：US13923048

申请日：2013-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-sub KIM ,  Denis SANNIKOV ,  Cheol-soo SONE ,  Jin-sub LEE

IPC: H01L33/06

CPC classification number: H01L33/06 ,  H01L33/12 ,  H01L33/32

Abstract: According to example embodiments, a semiconductor light emitting device including a doped buffer layer includes a substrate and a buffer layer on the substrate. The doping layer may include aluminum nitride (AlN) and the buffer layer may include a doping layer. An n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer may be on the buffer layer. An n-side electrode may be on the n-type nitride semiconductor layer. A p-side electrode may be on the p-type nitride semiconductor layer.

Abstract translation: 根据示例性实施例，包括掺杂缓冲层的半导体发光器件包括衬底和衬底上的缓冲层。 掺杂层可以包括氮化铝（AlN），并且缓冲层可以包括掺杂层。 n型氮化物半导体层，有源层和p型氮化物半导体层可以在缓冲层上。 n侧电极可以在n型氮化物半导体层上。 p侧电极可以在p型氮化物半导体层上。