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1.发明申请公开(公告)号：US20130248911A1
公开(公告)日：2013-09-26
申请号：US13844632
申请日：2013-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung-wook HWANG , Seong-eun PARK , Huj-jae CHUNG
IPC: H01L33/60
Abstract: A light-emitting device includes a nitride-based semiconductor reflector. The light-emitting device includes a nitride-based reflector and a light-emitting unit that is disposed on the nitride-based reflector. The nitride-based reflector includes undoped nitride semiconductor layers and heavily-doped nitride semiconductor layers that are alternately stacked. The heavily doped nitride semiconductor layers are etched at their edges to form air layers between adjacent undoped nitride semiconductor layers.
Abstract translation: 发光器件包括氮化物基半导体反射器。 发光装置包括氮化物类反射器和设置在氮化物类反射器上的发光单元。 基于氮化物的反射器包括交替层叠的未掺杂的氮化物半导体层和重掺杂的氮化物半导体层。 在其边缘蚀刻重掺杂的氮化物半导体层，以在相邻的未掺杂的氮化物半导体层之间形成空气层。
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公开(公告)号：US20170279009A1
公开(公告)日：2017-09-28
申请号：US15401604
申请日：2017-01-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： SUNG-MOK HONG , Kyung-wook HWANG
CPC classification number: H01L33/46 , H01L21/764 , H01L33/483 , H01L33/486 , H01L33/502 , H01L33/52 , H01L33/56 , H01L33/62 , H01L33/64 , H01L33/641 , H01L2224/32257 , H01L2224/48091 , H01L2224/48257 , H01L2224/73265 , H01L2224/83385 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A light-emitting device package includes a supporting substrate, a light-emitting device on the supporting substrate, an adhesive layer on at least a portion of a side surface or lower surface of the light-emitting device, the adhesive layer connecting the light-emitting device to the supporting substrate, and an air layer in a space defined by the supporting substrate, the light-emitting device, and the adhesive layer.
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公开(公告)号：US20170244010A1
公开(公告)日：2017-08-24
申请号：US15362966
申请日：2016-11-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung-sub KIM , Yong-il KIM , Dong-gun LEE , Kyung-wook HWANG , Jin-sub LEE , Min-gyeong GWON
CPC classification number: H01L33/58 , G02B5/208 , H01L25/0753 , H01L33/0079 , H01L33/06 , H01L33/32 , H01L33/44 , H01L33/504 , H01L33/508 , H01L33/56 , H01L33/60 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
Abstract: A light-emitting device package includes a plurality of luminescent structures arranged spaced apart from each other in a horizontal direction, an intermediate layer on the plurality of luminescent structures, and wavelength conversion layers on the intermediate layer, the wavelength conversion layers vertically overlapping separate, respective luminescent structures of the plurality of luminescent structures. The intermediate layer may include a plurality of layers, the plurality of layers associated with different refractive indexes, respectively. The intermediate layer may include a plurality of sets of holes, each set of holes may include a separate plurality of holes, and each wavelength conversion layer may vertically overlap a separate set of holes on the intermediate layer.
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Patent Agency Ranking
4.发明申请LIGHT-EMITTING DIODE (LED), LED PACKAGE AND APPARATUS INCLUDING THE SAME 有权发光二极管（LED），LED封装和设备，包括它们公开(公告)号：US20170062680A1
公开(公告)日：2017-03-02
申请号：US15201384
申请日：2016-07-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ha-nul YOO , Yong-il KIM , Nam-goo CHA , Wan-tae LIM , Kyung-wook HWANG , Sung-hyun SIM , Hye-seok NOH
CPC classification number: H01L33/60 , H01L25/0753 , H01L33/06 , H01L33/145 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/50 , H01L33/502 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
Abstract translation: 发光二极管（LED）封装包括发光结构，发光结构上的光波长转换层和光波长转换层上的滤光层。 发光结构包括第一导电型半导体层，第一导电型半导体层上的有源层和有源层上的第二导电型半导体层，并且发射具有第一导电型半导体层的第一光 波长。 光波长转换层吸收从发光结构发射的第一光，并发射具有与第一峰值波长不同的第二峰值波长的第二光。 光学滤波器层反射从发光结构发射的第一光，并透射从光波长转换层发射的第二光。
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5.发明申请LIGHT-EMITTING DEVICE HAVING DIELECTRIC REFLECTOR AND METHOD OF MANUFACTURING THE SAME 有权具有电介质反射器的发光装置及其制造方法公开(公告)号：US20130341658A1
公开(公告)日：2013-12-26
申请号：US13873688
申请日：2013-04-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-hoon LEE , Geon-wook YOO , Nam-goo CHA , Kyung-wook HWANG
CPC classification number: H01L33/60 , B82Y20/00 , H01L27/15 , H01L33/08 , H01L33/14 , H01L33/24 , H01L33/46 , Y10S977/762 , Y10S977/949 , Y10S977/95
Abstract: A light-emitting device includes a first conductive semiconductor layer formed on a substrate, a mask layer formed on the first conductive semiconductor layer and having a plurality of holes, a plurality of vertical light-emitting structures vertically grown on the first conductive semiconductor layer through the plurality of holes, a current diffusion layer surrounding the plurality of vertical light-emitting structures on the first conductive semiconductor layer, and a dielectric reflector filling a space between the plurality of vertical light-emitting structures on the current diffusion layer.
Abstract translation: 发光装置包括形成在基板上的第一导电半导体层，形成在第一导电半导体层上并具有多个孔的掩模层，在第一导电半导体层上垂直生长的多个垂直发光结构，通过 所述多个孔，围绕所述第一导电半导体层上的所述多个垂直发光结构的电流扩散层，以及填充所述电流扩散层上的所述多个垂直发光结构之间的空间的电介质反射器。
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公开(公告)号：US20180013042A1
公开(公告)日：2018-01-11
申请号：US15705069
申请日：2017-09-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ha-nul YOO , Yong-il KIM , Nam-goo CHA , Wan-tae LIM , Kyung-wook HWANG , Sung-hyun SIM , Hye-seok NOH
CPC classification number: H01L33/60 , H01L25/0753 , H01L33/06 , H01L33/145 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/50 , H01L33/502 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
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公开(公告)号：US20150325745A1
公开(公告)日：2015-11-12
申请号：US14651974
申请日：2013-12-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung-wook HWANG , Han-kyu SEONG , Hun-jae CHUNG , Nam-goo CHA
CPC classification number: H01L33/16 , H01L27/153 , H01L33/0054 , H01L33/0075 , H01L33/06 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/405 , H01L33/42 , H01L33/62 , H01L2933/0016 , H01L2933/0066
Abstract: A three-dimensional (3D) light-emitting device may include a plurality of 3D light-emitting structures formed apart from one another, each 3D light-emitting structure including: a semiconductor core vertically grown on one surface and doped in a first conductive type; an active layer formed so as to surround a surface of the semiconductor core; and a first semiconductor layer formed so as to surround a surface of the active layer and doped in a second conductive type. The 3D light-emitting device may include: a first porous insulating layer formed between lower corner portions of the 3D light-emitting structures so as to expose upper end portions of the 3D light-emitting structures; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the semiconductor core.
Abstract translation: 三维（3D）发光装置可以包括彼此分开形成的多个3D发光结构，每个3D发光结构包括：在一个表面上垂直生长并以第一导电类型掺杂的半导体芯 ; 形成为包围半导体芯的表面的有源层; 以及形成为围绕有源层的表面并以第二导电类型掺杂的第一半导体层。 3D发光装置可以包括：形成在3D发光结构的下角部之间以暴露3D发光结构的上端部的第一多孔绝缘层; 电连接到第一半导体层的第一电极; 和与半导体芯电连接的第二电极。
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公开(公告)号：US20140183546A1
公开(公告)日：2014-07-03
申请号：US13973720
申请日：2013-08-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jung-sub KIM , Jin-sub LEE , Cheol-soo SONE , Kyung-wook HWANG
IPC: H01L33/32
CPC classification number: H01L33/38 , H01L33/405
Abstract: A nitride-based semiconductor light-emitting device includes an n-type nitride-based semiconductor layer, an active layer, a p-type nitride-based semiconductor layer, an ohmic contact layer covering a portion of the p-type nitride-based semiconductor layer upper surface, and a p electrode including a first portion contacting the p-type nitride-based semiconductor layer and a second portion contacting the ohmic contact layer.
Abstract translation: 氮化物系半导体发光元件包括n型氮化物系半导体层，有源层，p型氮化物系半导体层，覆盖p型氮化物系半导体的一部分的欧姆接触层 以及包括与p型氮化物类半导体层接触的第一部分和与欧姆接触层接触的第二部分的p电极。
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