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公开(公告)号：US10553752B2
公开(公告)日：2020-02-04
申请号：US15270156
申请日：2016-09-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Nam-goo Cha , Young-soo Park , Dong-hyun Cho
Abstract: A light-emitting device includes a substrate including a top surface and a first side surface, wherein an area of the top surface is larger than an area of the first side surface, and a light-emitting structure on the first side surface of the substrate, the light-emitting structure having a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer, wherein the light-emitting structure emits a first light having a first peak wavelength, and wherein an emission area of a first light emitted through the top surface of the substrate is larger than an emission area of a first light emitted through the first side surface of the substrate.
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2.发明授权公开(公告)号：US09159877B2
公开(公告)日：2015-10-13
申请号：US14071411
申请日：2013-11-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam-goo Cha , Dong-ho Kim , Geon-wook Yoo , Dong-hoon Lee
CPC classification number: H01L33/0075 , B82Y20/00 , H01L33/002 , H01L33/04 , H01L33/06 , H01L33/10 , H01L33/24 , H01L33/44 , H01L33/46 , H01L2933/0025
Abstract: A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized. A conductive layer surrounds sides of the nano structure, a first electrode is electrically connected to the first semiconductor layer and a second electrode is electrically connected to the conductive layer.
Abstract translation: 一种纳米结构的发光器件，包括第一半导体层; 形成在第一半导体层上的纳米结构。 纳米结构包括纳米孔，以及形成在纳米孔的表面上并且其表面被平坦化的有源层和第二半导体层。 导电层包围纳米结构的侧面，第一电极电连接到第一半导体层，第二电极电连接到导电层。
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公开(公告)号：US20190221730A1
公开(公告)日：2019-07-18
申请号：US16361823
申请日：2019-03-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ha-nul Yoo , Yong-il Kim , Nam-goo Cha , Wan-tae Lim , Kyung-wook Hwang , Sung-hyun Sim , Hye-seok Noh
CPC classification number: H01L33/60 , H01L25/0753 , H01L33/06 , H01L33/145 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/50 , H01L33/502 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
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4.发明授权Light-emitting device having dielectric reflector and method of manufacturing the same 有权具有介质反射体的发光装置及其制造方法公开(公告)号：US08847265B2
公开(公告)日：2014-09-30
申请号：US13873688
申请日：2013-04-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong-hoon Lee , Geon-wook Yoo , Nam-goo Cha , Kyung-wook Hwang
CPC classification number: H01L33/60 , B82Y20/00 , H01L27/15 , H01L33/08 , H01L33/14 , H01L33/24 , H01L33/46 , Y10S977/762 , Y10S977/949 , Y10S977/95
Abstract: A light-emitting device includes a first conductive semiconductor layer formed on a substrate, a mask layer formed on the first conductive semiconductor layer and having a plurality of holes, a plurality of vertical light-emitting structures vertically grown on the first conductive semiconductor layer through the plurality of holes, a current diffusion layer surrounding the plurality of vertical light-emitting structures on the first conductive semiconductor layer, and a dielectric reflector filling a space between the plurality of vertical light-emitting structures on the current diffusion layer.
Abstract translation: 发光装置包括形成在基板上的第一导电半导体层，形成在第一导电半导体层上并具有多个孔的掩模层，在第一导电半导体层上垂直生长的多个垂直发光结构，通过 所述多个孔，围绕所述第一导电半导体层上的所述多个垂直发光结构的电流扩散层，以及填充所述电流扩散层上的所述多个垂直发光结构之间的空间的电介质反射器。
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公开(公告)号：US09419176B2
公开(公告)日：2016-08-16
申请号：US14651974
申请日：2013-12-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung-wook Hwang , Han-kyu Seong , Hun-jae Chung , Nam-goo Cha
IPC: H01L33/16 , H01L33/06 , H01L27/15 , H01L33/40 , H01L33/42 , H01L33/00 , H01L33/62 , H01L33/24 , H01L33/08 , H01L33/20
CPC classification number: H01L33/16 , H01L27/153 , H01L33/0054 , H01L33/0075 , H01L33/06 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/405 , H01L33/42 , H01L33/62 , H01L2933/0016 , H01L2933/0066
Abstract: A three-dimensional (3D) light-emitting device may include a plurality of 3D light-emitting structures formed apart from one another, each 3D light-emitting structure including: a semiconductor core vertically grown on one surface and doped in a first conductive type; an active layer formed so as to surround a surface of the semiconductor core; and a first semiconductor layer formed so as to surround a surface of the active layer and doped in a second conductive type. The 3D light-emitting device may include: a first porous insulating layer formed between lower corner portions of the 3D light-emitting structures so as to expose upper end portions of the 3D light-emitting structures; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the semiconductor core.
Abstract translation: 三维（3D）发光装置可以包括彼此分开形成的多个3D发光结构，每个3D发光结构包括：在一个表面上垂直生长并以第一导电类型掺杂的半导体芯 ; 形成为包围半导体芯的表面的有源层; 以及形成为围绕有源层的表面并以第二导电类型掺杂的第一半导体层。 3D发光装置可以包括：形成在3D发光结构的下角部之间以暴露3D发光结构的上端部的第一多孔绝缘层; 电连接到第一半导体层的第一电极; 和与半导体芯电连接的第二电极。
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Patent Agency Ranking
公开(公告)号：US09287445B2
公开(公告)日：2016-03-15
申请号：US14106186
申请日：2013-12-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Geon-wook Yoo , Nam-goo Cha , Dong-koog Lee , Dong-hoon Lee
CPC classification number: H01L33/08 , H01L27/156 , H01L33/24 , H01L33/387
Abstract: A nano-structured light-emitting device includes a plurality of light-emitting nanostructures each having a resistant layer disposed thereon. The device includes a first semiconductor layer of a first conductivity type, and a plurality of nanostructures disposed on the first semiconductor layer. Each nanostructure includes a nanocore, and an active layer and a second semiconductor layer of a second conductivity type that enclose surfaces of the nanocores. An electrode layer encloses and covers the plurality of nanostructures A plurality of resistant layers are disposed on the electrode layer and each corresponds to a respective nanostructure of the plurality of nanostructures.
Abstract translation: 纳米结构发光器件包括多个发光纳米结构，每个发光纳米结构具有设置在其上的电阻层。 该器件包括第一导电类型的第一半导体层和设置在第一半导体层上的多个纳米结构。 每个纳米结构包括纳米孔，以及包围纳米孔表面的第二导电类型的有源层和第二半导体层。 包围并覆盖多个纳米结构的电极层多个电阻层设置在电极层上，并且每个对应于多个纳米结构的相应纳米结构。
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公开(公告)号：US10243123B2
公开(公告)日：2019-03-26
申请号：US15705069
申请日：2017-09-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ha-nul Yoo , Yong-il Kim , Nam-goo Cha , Wan-tae Lim , Kyung-wook Hwang , Sung-hyun Sim , Hye-seok Noh
IPC: H01L25/075 , H01L33/00 , H01L33/60 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/50 , H01L33/38 , H01L33/44
Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
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8.发明授权公开(公告)号：US09583672B2
公开(公告)日：2017-02-28
申请号：US14879013
申请日：2015-10-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam-goo Cha , Dong-ho Kim , Geon-wook Yoo , Dong-hoon Lee
CPC classification number: H01L33/0075 , B82Y20/00 , H01L33/002 , H01L33/04 , H01L33/06 , H01L33/10 , H01L33/24 , H01L33/44 , H01L33/46 , H01L2933/0025
Abstract: A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized. A conductive layer surrounds sides of the nano structure, a first electrode is electrically connected to the first semiconductor layer and a second electrode is electrically connected to the conductive layer.
Abstract translation: 一种纳米结构的发光器件，包括第一半导体层; 形成在第一半导体层上的纳米结构。 纳米结构包括纳米孔，以及形成在纳米孔的表面上并且其表面被平坦化的有源层和第二半导体层。 导电层包围纳米结构的侧面，第一电极电连接到第一半导体层，第二电极电连接到导电层。
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公开(公告)号：US09525100B2
公开(公告)日：2016-12-20
申请号：US15042283
申请日：2016-02-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Geon-Wook Yoo , Nam-goo Cha , Dong-kuk Lee , Dong-hoon Lee
CPC classification number: H01L33/08 , H01L27/156 , H01L33/24 , H01L33/387
Abstract: Provided is a nano-structured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures which are formed on the first type semiconductor layer and include nanocores, and active layers and second type semiconductor layers that enclose surfaces of the nanocores; an electrode layer which encloses and covers the plurality of nanostructures; and a plurality of resistant layers which are formed on the electrode layer and respectively correspond to the plurality of nanostructures.
Abstract translation: 本发明提供一种纳米结构发光器件，其包括：第一类型半导体层; 形成在第一类型半导体层上并包括纳米孔的多个纳米结构体，以及包围纳米孔表面的活性层和第二类型半导体层; 包围并覆盖多个纳米结构的电极层; 以及形成在电极层上并分别对应于多个纳米结构的多个电阻层。
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公开(公告)号：US10734559B2
公开(公告)日：2020-08-04
申请号：US16361823
申请日：2019-03-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ha-nul Yoo , Yong-il Kim , Nam-goo Cha , Wan-tae Lim , Kyung-wook Hwang , Sung-hyun Sim , Hye-seok Noh
IPC: H01L33/00 , H01L25/075 , H01L33/60 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/50 , H01L33/38 , H01L33/44
Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
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