公开(公告)号：US20240145288A1

公开(公告)日：2024-05-02

申请号：US18323719

申请日：2023-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngbok LEE ,  Yihwan KIM ,  Seongkeun CHO ,  Sangchul HAN

IPC: H01L21/683 ,  C23C16/458

CPC classification number: H01L21/6833 ,  C23C16/4583

Abstract: A substrate processing apparatus includes a chamber providing a space where a semiconductor process is performed on a semiconductor substrate, a substrate plate configured to support the semiconductor substrate, the substrate plate having a central region and a peripheral region surrounding the central region, a central embossing pattern on the central region and configured to support a central portion of the semiconductor substrate, a plurality of first embossing patterns radially arranged around the central embossing pattern on the peripheral region, each of the plurality of first embossing patterns extending radially outward from the central embossing pattern with a first length, and a plurality of second embossing patterns respectively provided between the first embossing patterns on the peripheral region, each of the plurality of second embossing patterns extending radially outward from the central embossing pattern with a second length that is less than the first length.

公开(公告)号：US20180073979A1

公开(公告)日：2018-03-15

申请号：US15459393

申请日：2017-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seongkeun CHO ,  Sang-woo BAE ,  Won-don JOO ,  Sang-don JANG

IPC: G01N21/21 ,  G01N21/95 ,  G01N21/88 ,  H04N5/225 ,  H04N5/247

CPC classification number: G01N21/211 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2021/8848 ,  G01N2201/0683 ,  H04N5/2256 ,  H04N5/247

Abstract: Provided are a defect inspection system and a method of inspecting a defect, by which a defect in an inspection target may be precisely detected at a high speed. The defect inspection system includes a light source, a linear polarizer to linearly polarize light from the light source, a compensator to circularly or elliptically polarize light from the linear polarizer, a stage on which an inspection target is located, a polarization analyzer to selectively transmit light reflected by the inspection target, and a first camera to collect light from the polarization analyzer. Light transmitted through the compensator is obliquely incident to the inspection target, and reference light, which corresponds to light reflected in a defectless state, from among the light reflected by the inspection target, is blocked by the polarization analyzer.

公开(公告)号：US20190113463A1

公开(公告)日：2019-04-18

申请号：US15940011

申请日：2018-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seongkeun CHO ,  Akinori OKUBO ,  Tae Hyun KIM ,  Sangwoo BAE ,  Janghwi LEE

IPC: G01N21/88 ,  G01N21/21 ,  G01N21/95 ,  H01L21/66 ,  H01L21/67

CPC classification number: G01N21/8806 ,  G01N21/21 ,  G01N21/9501 ,  G01N2021/8848 ,  G01N2201/0683 ,  H01L21/67288 ,  H01L22/12

Abstract: An optical test system includes a stage region to accommodate an object to be tested, a first incident optical system which changes a first polarization state of a first light beam to a second polarization state and provide the first light beam in the second polarization state to the stage region in a first direction at a first incident angle which is not a right angle, a second incident optical system which changes a third polarization state of a second light beam to a fourth polarization state and inputs the second light beam in the fourth polarization state to the stage region in a second direction at a second incident angle which is not a right angle, and a main optical system to detect a first reflected light beam reflected from the stage region at a first reflection angle different from the first and second incident.

公开(公告)号：US20240381616A1

公开(公告)日：2024-11-14

申请号：US18636744

申请日：2024-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongkeun CHO ,  Suhwan HWANG ,  Kanguk KIM ,  Yihwan KIM ,  Jihoon KIM ,  Jinhyung PARK ,  Hyunsu SHIN ,  Taemin EARMME ,  Sungwook JUNG

IPC: H10B12/00

Abstract: A method may include forming a first gate structure on a first region of a substrate, forming a bit line structure on the first gate structure, forming a preliminary contact plug layer including amorphous silicon on the substrate, forming a reflective layer structure on the preliminary contact plug layer, forming a contact plug layer from the preliminary contact plug layer, and forming a capacitor on the contact plug layer. The reflective layer structure may include first and second reflective layers. A refractive index of the second reflective layer may be being greater than that of the first reflective layer. Portions of the second reflective layer may have different thicknesses on first and second regions of the substrate. The forming the contact plug layer may include performing a melting laser annealing (MLA) process on the reflective layer structure to convert the amorphous silicon of the preliminary contact plug layer into polysilicon.

公开(公告)号：US20230128492A1

公开(公告)日：2023-04-27

申请号：US18049732

申请日：2022-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongkeun CHO ,  Hee Young Park ,  Jin Hyung Park ,  Kun Tack Lee ,  Jung Hyuk Jang ,  Chun Hyung Chung

IPC: H01L27/108

Abstract: There is provided a semiconductor memory device capable of improving the performance and/or the reliability of a device. The semiconductor memory device includes a substrate having a cell area and a peripheral area defined along a periphery of the cell area, wherein the cell area includes an active area defined by a cell element separation film, a cell area separation film in the substrate and defining the cell area, and a plurality of storage contacts connected to the active area, and arranged along a first direction. The plurality of storage contacts includes a first storage contact, a second storage contact, and a third storage contact, wherein the second storage contact is between the first storage contact and the third storage contact, each of the first storage contact and the third storage contact contains or surrounds or defines an airgap, and the second storage contact is free of an airgap.

公开(公告)号：US20230247823A1

公开(公告)日：2023-08-03

申请号：US18056085

申请日：2022-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongkeun CHO ,  Jae Seong Park ,  Youngseok Kim ,  Young Sin Kim ,  Daeyoung Moon ,  Keum Joo Lee ,  Sung-Wook Jung ,  Sungduk Hong ,  Suhwan Hwang

IPC: H01L29/94 ,  G11C5/06

CPC classification number: H01L27/10814 ,  G11C5/063 ,  H01L27/10897

Abstract: A semiconductor memory device includes a substrate including a cell area and a peripheral area defined by a periphery of the cell area, the cell area including a dummy cell area and a normal cell area, and an active area defined by a cell element isolation film. The device includes a cell area separation film defining the cell area in the substrate, the dummy cell area defining a boundary with the cell area separation film between the normal cell area and the cell area separation film. The device includes a normal bit-line on the normal cell area and extending in a first direction, a dummy bit-line group on the dummy cell area, the dummy bit-line group including a plurality of dummy bit-lines extending in the first direction, and a plurality of storage contacts connected to the active area and located along a second direction perpendicular to the first direction.

公开(公告)号：US20220262621A1

公开(公告)日：2022-08-18

申请号：US17478619

申请日：2021-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongkeun CHO ,  Young Hoo KIM ,  Seung Min SHIN ,  Tae Min EARMME ,  Kun Tack LEE ,  Hun Jae JANG ,  Eun Hee JEANG

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/428 ,  B08B3/08

Abstract: A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

公开(公告)号：US20220199473A1

公开(公告)日：2022-06-23

申请号：US17386323

申请日：2021-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seongkeun CHO ,  Eunhee JEANG ,  Jihun LEE ,  Gyumin JEONG ,  Hyunjae KANG ,  Taemin EARMME

IPC: H01L21/66 ,  H01L21/311

Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.