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1.发明授权公开(公告)号：US11921270B2
公开(公告)日：2024-03-05
申请号：US17561276
申请日：2021-12-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sungil Choi , Yeeun Park , Kyungbeom Kim , Sungyoon Ryu , Jinwoo Ahn , Sunhong Jun
CPC classification number: G02B21/0004 , G01J3/2823 , G02B21/02 , G02B21/36
Abstract: An inspection system includes a main support die configured to receive a target specimen; an auxiliary support die adjacent to the main support die and configured to receive a reference specimen; a cleaning device configured to remove contaminants from the reference specimen; an objective lens unit configured to direct light to main support die from a light source adjacent to the objective lens unit; a spectroscope between the objective lens unit and the light source; a detector adjacent to the objective lens unit; an imaging device between the objective lens unit and the detector; and a computer system in communication with the detector.
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2.发明公开公开(公告)号：US20230194567A1
公开(公告)日：2023-06-22
申请号：US17878414
申请日：2022-08-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kwangeun Kim , Seungbum Hong , Sungyoon Ryu , Hoon Kim , Jiwon Yeom , Seokjung Yun , Souk Kim , Younghoon Sohn , Yusin Yang
CPC classification number: G01Q40/00 , H01L22/12 , G01Q70/10 , H01L27/10876
Abstract: A method of operating an atomic force microscope (AFM) is provided. The method includes inspecting a sample by using the AFM and inspecting a tip of a probe of the AFM by using a characterization sample. The characterization sample includes a first characterization pattern that includes a line and space pattern of a first height, a second characterization pattern that includes a line and space pattern of a second height that is lower than the first height, and a third characterization pattern that includes a line and space pattern of a third height that is lower than the second height, and includes a rough surface.
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公开(公告)号：US20250003734A1
公开(公告)日：2025-01-02
申请号：US18639332
申请日：2024-04-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sungyoon Ryu , Ingi Kim , Suhwan Park , Inkeun Baek , Younghoon Sohn , Soobin Sinn , Yusin Yang , Sunhong Jun , Ikseon Jeon
IPC: G01B11/06
Abstract: A measuring system measures an overall resistance of two or more films on a substrate/measurement object by a terahertz absorption measurement and an overall film thickness by a photoacoustic measurement. The system estimates a first film thickness based on the overall resistance, then subtracts this estimated thickness from the overall film thickness measured by the photoacoustic measurement. The system includes a source unit to output a laser beam. A first pump-probe unit receives the laser beam and performs a photoacoustic test on the measurement object. A second pump-probe unit receives the laser beam and performs a terahertz signal test on the measurement object. The system also includes a stage to support the measurement object and controls for controlling elements and calculating the film thicknesses
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公开(公告)号：US12092656B2
公开(公告)日：2024-09-17
申请号：US17721522
申请日：2022-04-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sungyoon Ryu , Seungbum Hong , Kwangeun Kim , Hoon Kim , Jiwon Yeom , Seokjung Yun , Souk Kim , Younghoon Sohn , Yusin Yang
CPC classification number: G01R1/06727 , G01R1/04
Abstract: A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.
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公开(公告)号：US20240230528A1
公开(公告)日：2024-07-11
申请号：US18389028
申请日：2023-11-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sunhong Jun , Inkeun Baek , Wontae Kim , Namil Koo , Ingi Kim , Sungyoon Ryu , Younghoon Sohn , Yusin Yang , Ikseon Jeon , Eunhyuk Choi
IPC: G01N21/3581 , G01N21/95 , H01L21/66
CPC classification number: G01N21/3581 , G01N21/9501 , H01L22/12
Abstract: A measuring apparatus includes a stage including a transmissive wafer chuck on which a sample wafer is provided, where the sample wafer includes a silicon substrate and at least one material layer on the silicon substrate, a light source unit including a light source configured to generate and output a femtosecond laser beam, and a confocal laser-induced terahertz (THz) emission microscopy (LTEM) unit configured to generate multi-photon excitation by splitting the femtosecond laser beam into four sub-laser beams and causing three sub-laser beams among the four sub-laser beams to be incident in an overlapping manner on a measurement position of the sample wafer, where the confocal LTEM unit is configured to generate the multi-photon excitation based on the three sub-laser beams being incident on a lower surface of the silicon substrate.
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Patent Agency Ranking
公开(公告)号：US11428645B2
公开(公告)日：2022-08-30
申请号：US17026494
申请日：2020-09-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kihak Nam , Sungyoon Ryu , Kwangeun Kim , Hwiwoo Park , Dayoung Yoon , Myoungkyu Choi
IPC: G01N21/95 , H01L21/687 , G01N21/55 , G01N21/21
Abstract: According to embodiments, a wafer inspection device is provided. The wafer inspection device includes a porous chuck including a plurality of pores formed all over the porous chuck to allow pressure for fixing a wafer to be applied thereto, a chuck driving device, a back side inspection optical system configured to inspect a portion of a back surface of the wafer, and a position identification optical system, wherein the porous chuck includes a plurality of holes uniformly formed all over the porous chuck to partially expose the back surface of the wafer and a slit exposing the back surface of the wafer and extending in one direction parallel to a top surface of the porous chuck.
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公开(公告)号：US20210396510A1
公开(公告)日：2021-12-23
申请号：US17156049
申请日：2021-01-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwangsoo Kim , Sungyoon Ryu , Daejun Park , Seong Yun , Seungryeol Oh , Sujin Lee , Jaeyong Lee , Minho Rim , Chungsam Jun , Myungjun Lee
Abstract: Provided is a through-focus image-based metrology device including an optical device, and a computing device configured to acquire at least one through-focus image of a target from the optical device, generate an intensity profile based on the acquired at least one through-focus image, and perform metrology on the target based on the generated intensity profile, wherein the optical device includes a stage on which the target is disposed, the stage being configured to move by one step in at least one direction based on control of the computing device, and to acquire the at least one through-focus image, an image sensor disposed on the stage, an objective lens disposed between the image sensor and the stage, the objective lens being configured to transmit reflected light from the target, and a light source configured to emit illumination light to the target through the objective lens.
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公开(公告)号：US20240255439A1
公开(公告)日：2024-08-01
申请号：US18367784
申请日：2023-09-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Heeyoon Han , Donghoon Kim , Sungyoon Ryu , Younghoon Sohn , Sunhong Jun
CPC classification number: G01N21/9501 , G01N21/31 , G06N20/00
Abstract: A defect detection method includes radiating light onto a substrate, obtaining a spectrum image, performing an electrical die sorting (EDS) test on the substrate, inspecting defects of each of a plurality of blocks of the substrate based on a result of the EDS test, generating a defect map, generating spectrum image information by matching the spectrum image with the defect map, training a defect detection model by using the defect grade as an output value and the spectrum image information as an input value, obtaining a target spectrum image with respect to a target substrate, extracting a feature vector from the target spectrum image by using the defect detection model, and detecting a target defect grade of the target spectrum image based on the feature vector, and generating a target defect map based on the target defect grade.
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公开(公告)号：US11988495B2
公开(公告)日：2024-05-21
申请号：US17156049
申请日：2021-01-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwangsoo Kim , Sungyoon Ryu , Daejun Park , Seong Yun , Seungryeol Oh , Sujin Lee , Jaeyong Lee , Minho Rim , Chungsam Jun , Myungjun Lee
CPC classification number: G01B11/02 , G01N21/8806 , G01N21/8851 , G03F7/70625 , G03F7/7065 , G01B2210/56 , G01N2021/8887
Abstract: Provided is a through-focus image-based metrology device including an optical device, and a computing device configured to acquire at least one through-focus image of a target from the optical device, generate an intensity profile based on the acquired at least one through-focus image, and perform metrology on the target based on the generated intensity profile, wherein the optical device includes a stage on which the target is disposed, the stage being configured to move by one step in at least one direction based on control of the computing device, and to acquire the at least one through-focus image, an image sensor disposed on the stage, an objective lens disposed between the image sensor and the stage, the objective lens being configured to transmit reflected light from the target, and a light source configured to emit illumination light to the target through the objective lens.
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10.发明公开公开(公告)号：US20230384212A1
公开(公告)日：2023-11-30
申请号：US18097924
申请日：2023-01-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Donghyun LEE , Sungyoon Ryu , Sooseok Lee , Younghoon Sohn
CPC classification number: G01N21/1702 , G01N21/9501 , H01L22/30 , H01L22/12 , H10B43/27 , G01N2021/1706
Abstract: An inspection method is provided. The inspection method includes inspecting a plurality of first observation sites by detecting ultrasonic signals emitted from the plurality of first observation sites, inspecting a plurality of second observation sites by detecting ultrasonic signals emitted from the plurality of second observation sites; and inspecting a target structure by detecting an ultrasonic signal emitted from the target structure, where the target structure includes a structure of interest, and wherein the plurality of first observation sites are intermediate results of forming the target structure, respectively, and the plurality of second observation sites are structures modified from the target structure.
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