公开(公告)号：US20240025770A1

公开(公告)日：2024-01-25

申请号：US18373283

申请日：2023-09-27

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jae Young Choi ,  Woong Ki Jeong ,  Kyu Won Han ,  Yeo Jin Yoon

IPC: C02F1/32

CPC classification number: C02F1/325 ,  C02F2201/322 ,  C02F2303/04

Abstract: A light emitting module including a light source configured to irradiate ultraviolet light, a board on which the light source is disposed, a tube accommodating the board and including a transparent region to transmit the ultraviolet light emitted from the light source, a first base coupled to one side of the tube, a second base coupled to the other side of the tube, a fixation groove disposed in the tube and connected to at least one of the first and second bases, in which the board is coupled to be inserted into the fixation groove, and the fixation groove is spaced apart from a center of the first base when viewed in a cross-section perpendicular to a length direction of the tube.

公开(公告)号：US10559715B2

公开(公告)日：2020-02-11

申请号：US16259478

申请日：2019-01-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Mae Yi Kim ,  Jin Woong Lee ,  Yeo Jin Yoon ,  Seom Geun Lee ,  Yong Woo Ryu ,  Keum Ju Lee

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/14 ,  H01L33/42 ,  H01L33/32 ,  H01L33/20

Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

公开(公告)号：US10340309B2

公开(公告)日：2019-07-02

申请号：US15898644

申请日：2018-02-18

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

IPC: H01L27/15 ,  H01L33/32 ,  H01L33/08 ,  H01L33/24 ,  H01L33/62 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L27/32 ,  H01L33/28 ,  H01L51/52

Abstract: A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.

公开(公告)号：US10243109B2

公开(公告)日：2019-03-26

申请号：US15965757

申请日：2018-04-27

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim

IPC: H01L33/40 ,  H01L33/44 ,  H01L33/42 ,  H01L33/38 ,  H01L33/22 ,  H01L33/20

Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

公开(公告)号：US20180261739A1

公开(公告)日：2018-09-13

申请号：US15758302

申请日：2016-09-07

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jun Yong Park ,  In Kyu Park ,  Yeo Jin Yoon

IPC: H01L33/60 ,  H01L33/62 ,  H01L33/64 ,  H01L33/46

CPC classification number: H01L33/60 ,  H01L23/3114 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/46 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/48091 ,  H01L2224/48111 ,  H01L2924/00014

Abstract: A light-emitting diode package comprising: a substrate having one or more first pads, one or more second pads, a first terminal, and a second terminal, which are all formed on the upper surface; a plurality of light-emitting diode chips loaded on the one or more first pads and electrically connected to the first pad and the second pad; and a reflector coupled to an upper part of the substrate and having an opening part through which the plurality of light-emitting diode chips is exposed, wherein the first pad is formed as one body with the substrate, and the first terminal or the second terminal are connected to an external power source and formed to have a predetermined height at the upper surface of the substrate.

公开(公告)号：US20180261723A1

公开(公告)日：2018-09-13

申请号：US15971974

申请日：2018-05-04

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seong Kyu Jang ,  Kyu Ho Lee ,  Yeo Jin Yoon ,  Chi Hyun In ,  Jong Hyeon Chae ,  Hong Suk Cho

IPC: H01L33/20 ,  H01L33/40 ,  H01L33/62 ,  H01L33/46 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/00

CPC classification number: H01L33/20 ,  H01L21/76 ,  H01L23/00 ,  H01L33/00 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/46 ,  H01L33/48 ,  H01L33/62 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/19107 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: An ultraviolet light emitting device is disclosed. An ultraviolet light emitting device according to a first embodiment of the disclosed technology comprises: a substrate having a first surface and a second surface facing the first surface; and a light emitting diode comprising a first type semiconductor layer, an active layer which emits ultraviolet light, and a second type semiconductor layer, the light emitting diode being formed on the first surface of the substrate, wherein the surface area of the substrate divided by the light emitting area of the light emitting diode may be ≤6.5.

公开(公告)号：US20180219130A1

公开(公告)日：2018-08-02

申请号：US15936321

申请日：2018-03-26

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

IPC: H01L33/36 ,  H01L33/62 ,  H01L33/38 ,  H01L33/20 ,  H01L33/42 ,  H01L33/46 ,  H01L33/08 ,  H01L33/14

CPC classification number: H01L33/36 ,  H01L33/08 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

公开(公告)号：US09929208B2

公开(公告)日：2018-03-27

申请号：US15461026

申请日：2017-03-16

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

IPC: H01L29/18 ,  H01L27/15 ,  H01L33/62 ,  H01L33/24 ,  H01L33/08 ,  H01L27/32

CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.

公开(公告)号：US09905729B2

公开(公告)日：2018-02-27

申请号：US15354928

申请日：2016-11-17

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Mae Yi Kim ,  Jin Woong Lee ,  Yeo Jin Yoon ,  Seom Geun Lee ,  Yong Woo Ryu ,  Keum Ju Lee

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/14 ,  H01L33/42 ,  H01L33/32

CPC classification number: H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62

Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

公开(公告)号：US09893051B2

公开(公告)日：2018-02-13

申请号：US14991829

申请日：2014-07-10

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun Lee ,  Yeo Jin Yoon ,  Jae Kwon Kim ,  So Ra Lee ,  Myoung Hak Yang

IPC: H01L27/02 ,  H01L33/62 ,  H01L27/15 ,  H01L33/40 ,  H01L25/16 ,  H01L33/06 ,  H01L33/32 ,  H01L33/44

CPC classification number: H01L27/0255 ,  H01L25/167 ,  H01L27/15 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed herein is a light emitting diode chip having ESD protection. An exemplary embodiment provides a flip-chip type light emitting diode chip, which includes a light emitting diode part aligned on a substrate, and a reverse-parallel diode part disposed on the substrate and connected to the light emitting diode part. Within the flip-chip type light emitting diode chip, the light emitting diode part is placed together with reverse-parallel diode part, thereby providing a light emitting diode chip exhibiting strong resistance to electrostatic discharge.