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公开(公告)号：US20190195441A1
公开(公告)日：2019-06-27
申请号：US16203045
申请日：2018-11-28
Applicant: SORAA, INC.
Inventor： Aurelien J.F. David , Troy A. Trottier , Michael R. Krames
IPC: F21K9/64 , F21V23/02 , F21K9/232 , F21K9/27 , F21K9/23 , F21V23/04 , H01L33/32 , H01L33/48 , H01L33/50 , F21V29/70 , H01L33/60 , H01L25/075 , F21V9/30 , F21V13/08 , F21V3/00 , F21V7/04 , F21K9/62 , F21K9/233 , H01L27/15
CPC classification number: F21K9/64 , F21K9/23 , F21K9/232 , F21K9/233 , F21K9/27 , F21K9/62 , F21V3/00 , F21V7/04 , F21V9/30 , F21V13/08 , F21V23/02 , F21V23/04 , F21V29/70 , F21Y2101/00 , F21Y2113/13 , F21Y2115/10 , H01L25/0753 , H01L27/153 , H01L33/20 , H01L33/32 , H01L33/483 , H01L33/502 , H01L33/504 , H01L33/505 , H01L33/60 , H01L2924/0002 , H01L2924/00
Abstract: LED lamp systems having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm.
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公开(公告)号：US10147850B1
公开(公告)日：2018-12-04
申请号：US14531545
申请日：2014-11-03
Applicant: Soraa, Inc.
Inventor： Michael R. Krames , Troy Trottier , Frank M. Steranka , William D. Houck , Arpan Chakraborty
IPC: H01L33/50 , H01L27/15 , H01L25/075 , F21K9/64 , F21Y113/13 , F21Y101/00
Abstract: An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.
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公开(公告)号：US09985179B2
公开(公告)日：2018-05-29
申请号：US15700562
申请日：2017-09-11
Applicant: SORAA, INC.
Inventor： Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames , Aurelien J. F. David
CPC classification number: H01L33/20 , H01L33/0075 , H01L33/02 , H01L33/16 , H01L33/32 , H01L33/405 , H05B33/0842
Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.
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公开(公告)号：US09915775B2
公开(公告)日：2018-03-13
申请号：US14996143
申请日：2016-01-14
Applicant: Soraa, Inc.
Inventor： Michael R. Krames , Aurelien J. F. David , Emil Radkov , Willem Smitt
IPC: F21V8/00 , G02F1/1335 , F21S4/20 , F21K9/23 , A61M21/00 , F21V23/00 , H05B33/08 , H05B37/02 , F21W101/02 , F21V29/74 , F21Y105/10 , F21Y115/10 , F21Y113/13 , F21Y105/18 , F21K9/238
CPC classification number: G02B6/0073 , A61M21/00 , A61M2021/0044 , F21K9/23 , F21K9/238 , F21S4/20 , F21V23/006 , F21V29/74 , F21W2102/00 , F21W2107/10 , F21Y2105/10 , F21Y2105/18 , F21Y2113/13 , F21Y2115/10 , G02F1/133603 , H05B33/086 , H05B37/0281 , A61M2230/205 , A61M2230/005
Abstract: Methods and apparatus for providing circadian-friendly LED light sources are disclosed. A light source is formed to include a first LED emission (e.g., one or more LEDs emitting a first spectrum) and a second LED emission (e.g., one or more LEDs emitting a second spectrum) wherein the first and second LED emissions are combined in a first ratio and in a second ratio such that while changing from the first ratio to the second ratio the relative circadian stimulation is varied while maintaining a color rendering index above 80.
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公开(公告)号：US08686458B2
公开(公告)日：2014-04-01
申请号：US13931359
申请日：2013-06-28
Applicant: Soraa, Inc.
Inventor： Michael R. Krames , Mark P. D'Evelyn , James W. Raring , Thomas M. Katona
CPC classification number: H05B37/02 , H01L33/16 , H01L33/32 , H01L33/405 , H01L2224/16 , H01L2224/48
Abstract: A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.
Abstract translation: 发射波长为390-415nm的发光二极管器件具有具有活性区域的大量含镓和氮的衬底。 该器件的电流密度大于约175安培/厘米2，外部量子效率具有小于约5％的绝对效率。
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Patent Agency Ranking
公开(公告)号：US10955608B2
公开(公告)日：2021-03-23
申请号：US16397001
申请日：2019-04-29
Applicant: Soraa, Inc.
Inventor： Michael R. Krames , Aurelien J. F. David , Emil Radkov , Willem Smitt
IPC: G02B6/00 , F21V8/00 , G02F1/13357 , F21S4/20 , F21K9/23 , A61M21/00 , F21V23/00 , F21V29/74 , F21Y105/10 , F21Y115/10 , F21Y113/13 , F21Y105/18 , F21K9/238 , F21W107/10 , H05B45/20 , H05B47/16 , F21W102/00
Abstract: Methods and apparatus for providing circadian-friendly LED light sources are disclosed. A light source is formed to include a first LED emission (e.g., one or more LEDs emitting a first spectrum) and a second LED emission (e.g., one or more LEDs emitting a second spectrum) wherein the first and second LED emissions are combined in a first ratio and in a second ratio such that while changing from the first ratio to the second ratio the relative circadian stimulation is varied while maintaining a color rendering index above 80.
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公开(公告)号：US20180269351A1
公开(公告)日：2018-09-20
申请号：US15986253
申请日：2018-05-22
Applicant: Soraa, Inc.
Inventor： Michael R. Krames , Mark P. D'Evelyn , Akinori Koukitu , Yoshinao Kumagai , Hisashi Murakami
CPC classification number: H01L33/0075 , H01L33/16 , H01L33/32
Abstract: InGaN-based light-emitting devices fabricated on an InGaN template layer are disclosed.
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公开(公告)号：US10076633B2
公开(公告)日：2018-09-18
申请号：US15229959
申请日：2016-08-05
Applicant: SORAA, INC.
Inventor： Michael R. Krames , Aurelien J. F. David
IPC: F21K99/00 , A61M21/02 , H05B37/02 , F21S4/20 , F21K9/23 , F21V29/70 , F21K9/64 , F21K9/232 , F21K9/235 , A61N5/06 , F21V5/04 , F21V9/08 , F21V15/01 , F21V19/00 , F21V9/30 , F21V23/00 , H05B33/08 , F21Y105/10 , F21Y115/10 , F21Y113/13 , F21V29/74 , F21Y105/18 , A61M21/00 , F21K9/238 , F21W107/10
Abstract: Methods and apparatus for providing circadian-friendly LED light sources are disclosed. A light source is formed to include a first LED emission (e.g., one or more LEDs emitting a first spectrum) and a second LED emission (e.g., one or more LEDs emitting a second spectrum) wherein the first and second LED emissions are combined in a first ratio and in a second ratio such that while changing from the first ratio to the second ratio the relative circadian stimulation is varied while maintaining a color rendering index above 80.
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公开(公告)号：US09978904B2
公开(公告)日：2018-05-22
申请号：US14054234
申请日：2013-10-15
Applicant: SORAA, INC.
Inventor： Michael R. Krames , Mark P. D'Evelyn , Akinori Koukitu , Yoshinao Kumagai , Hisashi Murakami
CPC classification number: H01L33/0075 , H01L33/16 , H01L33/32
Abstract: InGaN-based light-emitting devices fabricated on an InGaN template layer are disclosed.
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公开(公告)号：US09650723B1
公开(公告)日：2017-05-16
申请号：US14249708
申请日：2014-04-10
Applicant: SORAA, INC.
Inventor： Mark P. D'Evelyn , Wenkan Jiang , Derrick S. Kamber , Rajeev T. Pakalapati , Michael R. Krames
CPC classification number: C30B7/105 , C30B7/10 , C30B9/00 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0254 , H01L21/2007
Abstract: Large area seed crystals for ammonothermal GaN growth are fabricated by deposition or layer transfer of a GaN layer on a CTE-matched handle substrate. The sides and back of the handle substrate are protected from the ammonothermal growth environment by a coating comprising an adhesion layer, a diffusion barrier layer, and an inert layer. A patterned mask, also comprising an adhesion layer, a diffusion barrier layer, and an inert layer, may be provided over the GaN layer to allow for reduction of the dislocation density by lateral epitaxial growth.
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