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公开(公告)号：US20130256009A1
公开(公告)日：2013-10-03
申请号：US13677840
申请日：2012-11-15
申请人： Tadahiro SASAKI , Kazuhiko Itaya , Hiroshi Yamada
发明人： Tadahiro SASAKI , Kazuhiko Itaya , Hiroshi Yamada
CPC分类号： H05K1/162 , H01L2224/16225 , H01L2924/0002 , H05K1/0236 , H05K1/09 , H05K1/185 , H05K2201/0715 , H01L2924/00
摘要： An EBG structure according to an embodiment includes an electrode unit made of a first conductor and provided with a space, a patch unit provided approximately parallel to the electrode unit and made of a second conductor, an insulating layer provided between the electrode unit and the patch unit, a first via provided between the patch unit and the electrode unit in the insulating layer and connected to the patch unit and the electrode unit, and a second via provided between the patch unit and the space in the insulating layer, connected to the patch unit, and not connected to the electrode unit.
摘要翻译： 根据实施例的EBG结构包括由第一导体制成并且设置有空间的电极单元，设置成大致平行于电极单元并由第二导体制成的贴片单元，设置在电极单元和贴片之间的绝缘层 单元，在所述绝缘层中的所述贴片单元和所述电极单元之间设置并连接到所述贴片单元和所述电极单元的第一通孔，以及设置在所述贴片单元和所述绝缘层中的与所述贴片 单元，而不连接到电极单元。
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公开(公告)号：US09019032B2
公开(公告)日：2015-04-28
申请号：US13677840
申请日：2012-11-15
申请人： Tadahiro Sasaki , Kazuhiko Itaya , Hiroshi Yamada
发明人： Tadahiro Sasaki , Kazuhiko Itaya , Hiroshi Yamada
CPC分类号： H05K1/162 , H01L2224/16225 , H01L2924/0002 , H05K1/0236 , H05K1/09 , H05K1/185 , H05K2201/0715 , H01L2924/00
摘要： An EBG structure according to an embodiment includes an electrode unit made of a first conductor and provided with a space, a patch unit provided approximately parallel to the electrode unit and made of a second conductor, an insulating layer provided between the electrode unit and the patch unit, a first via provided between the patch unit and the electrode unit in the insulating layer and connected to the patch unit and the electrode unit, and a second via provided between the patch unit and the space in the insulating layer, connected to the patch unit, and not connected to the electrode unit.
摘要翻译： 根据实施例的EBG结构包括由第一导体制成并且设置有空间的电极单元，设置成大致平行于电极单元并由第二导体制成的贴片单元，设置在电极单元和贴片之间的绝缘层 单元，在所述绝缘层中的所述贴片单元和所述电极单元之间设置并连接到所述贴片单元和所述电极单元的第一通孔，以及设置在所述贴片单元和所述绝缘层中的与所述贴片 单元，而不连接到电极单元。
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公开(公告)号：US07906823B2
公开(公告)日：2011-03-15
申请号：US12195587
申请日：2008-08-21
申请人： Kazuhiro Suzuki , Michihiko Nishigaki , Yutaka Onozuka , Hiroshi Yamada , Kazuhiko Itaya , Hideyuki Funaki
发明人： Kazuhiro Suzuki , Michihiko Nishigaki , Yutaka Onozuka , Hiroshi Yamada , Kazuhiko Itaya , Hideyuki Funaki
IPC分类号： H01L29/84
CPC分类号： B81C1/00269 , B81C2203/0145
摘要： A MEMS apparatus includes a MEMS unit formed on a semiconductor substrate and a cover provided with a pore and serving to seal the MEMS unit. The pore is sealed with a sealing material shaped in a sphere or a hemisphere.
摘要翻译： MEMS器件包括形成在半导体衬底上的MEMS单元和设置有孔并用于密封MEMS单元的盖。 孔用密封材料密封，形状为球形或半球形。
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公开(公告)号：US07875481B2
公开(公告)日：2011-01-25
申请号：US12200177
申请日：2008-08-28
IPC分类号： H01L21/00
CPC分类号： B81C1/0023 , B81C1/00246 , B81C2201/019 , B81C2203/0771 , H01L24/19 , H01L24/24 , H01L24/96 , H01L2224/04105 , H01L2224/12105 , H01L2224/24137 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/01057 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10253 , H01L2924/10329 , H01L2924/1461 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/351 , H01L2924/3511 , H01L2924/00
摘要： It is made possible to provide a highly integrated, thin apparatus can be obtained, even if the apparatus contains MEMS devices and semiconductor devices. A semiconductor apparatus includes: a first chip comprising a MEMS device formed therein; a second chip comprising a semiconductor device formed therein; and an adhesive layer bonding a side face of the first chip to a side face of the second chip, and having a lower Young's modulus than the material of the first and second chips.
摘要翻译： 即使该装置包含MEMS器件和半导体器件，也可以获得高度集成的薄型器件。 一种半导体装置包括：第一芯片，其包括形成在其中的MEMS器件; 包括其中形成的半导体器件的第二芯片; 以及将第一芯片的侧面接合到第二芯片的侧面并且具有比第一芯片和第二芯片的材料更低的杨氏模量的粘合剂层。
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公开(公告)号：US20070273018A1
公开(公告)日：2007-11-29
申请号：US11678996
申请日：2007-02-26
CPC分类号： B81C1/0023 , B81C1/00246 , B81C2201/019 , B81C2203/0771 , H01L24/19 , H01L24/24 , H01L24/96 , H01L2224/04105 , H01L2224/12105 , H01L2224/24137 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/01057 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10253 , H01L2924/10329 , H01L2924/1461 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/351 , H01L2924/3511 , H01L2924/00
摘要： It is made possible to provide a highly integrated, thin apparatus can be obtained, even if the apparatus contains MEMS devices and semiconductor devices. A semiconductor apparatus includes: a first chip comprising a MEMS device formed therein; a second chip comprising a semiconductor device formed therein; and an adhesive layer bonding a side face of the first chip to a side face of the second chip, and having a lower Young's modulus than the material of the first and second chips.
摘要翻译： 即使该装置包含MEMS器件和半导体器件，也可以获得高度集成的薄型器件。 一种半导体装置包括：第一芯片，其包括形成在其中的MEMS器件; 包括其中形成的半导体器件的第二芯片; 以及将第一芯片的侧面接合到第二芯片的侧面并且具有比第一芯片和第二芯片的材料更低的杨氏模量的粘合剂层。
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公开(公告)号：US09041182B2
公开(公告)日：2015-05-26
申请号：US13688823
申请日：2012-11-29
CPC分类号： H01L23/48 , H01L21/78 , H01L23/055 , H01L23/10 , H01L23/66 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L24/97 , H01L2224/0401 , H01L2224/05568 , H01L2224/05644 , H01L2224/0603 , H01L2224/06181 , H01L2224/12105 , H01L2224/13007 , H01L2224/13111 , H01L2224/1329 , H01L2224/133 , H01L2224/14181 , H01L2224/16235 , H01L2224/73253 , H01L2224/81191 , H01L2224/81192 , H01L2224/81205 , H01L2224/814 , H01L2224/81411 , H01L2224/81444 , H01L2224/81447 , H01L2224/81805 , H01L2224/81815 , H01L2224/81895 , H01L2224/81986 , H01L2224/97 , H01L2924/00014 , H01L2924/01322 , H01L2924/1461 , H01L2924/1515 , H01L2924/15788 , H01L2924/16153 , H01L2224/81 , H01L2924/01079 , H01L2924/01014 , H01L2924/01047 , H01L2924/01029 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor package according to embodiments includes: a semiconductor chip including a front electrode on a front surface thereof and a back electrode on a back surface thereof; a front-side cap portion including an air gap in a portion between the semiconductor chip and the front-side cap portion and a front-side penetrating electrode, and is positioned to face the front surface of the semiconductor chip; a back-side cap portion bonded with a first cap portion to hermetically seal the semiconductor chip, includes an air gap at least in a portion between the semiconductor chip and the back-side cap portion and a back-side penetrating electrode, and is positioned to face the back surface of the semiconductor chip; a front-side connecting portion which electrically connects the front electrode and the front-side penetrating electrode; and a back-side connecting portion which electrically connects the back electrode and the back-side penetrating electrode.
摘要翻译： 根据实施例的半导体封装包括：半导体芯片，其前表面包括前电极，背面具有背电极; 在半导体芯片和前侧盖部分之间的部分中包括气隙的前侧盖部分和前侧穿透电极，并且被定位成面向半导体芯片的前表面; 与第一帽部接合以密封半导体芯片的背面盖部分至少在半导体芯片和背面侧帽部分之间的部分和背面贯通电极之间包括气隙，并且位于 面对半导体芯片的背面; 电连接前电极和前侧穿透电极的前侧连接部; 以及将背面电极和背面贯通电极电连接的背面侧连接部。
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公开(公告)号：US20120228755A1
公开(公告)日：2012-09-13
申请号：US13235386
申请日：2011-09-18
IPC分类号： H01L23/053 , H01L21/56
CPC分类号： H01L23/04 , H01L23/13 , H01L23/49827 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L24/24 , H01L2924/01005 , H01L2924/01006 , H01L2924/01024 , H01L2924/01029 , H01L2924/01074 , H01L2924/01322 , H01L2924/014 , H01L2924/12042 , H01L2924/1461 , H01L2924/15788 , H01L2924/00
摘要： A semiconductor module includes a high frequency chip, an insulating cap, a through electrode, interconnections, and an insulating layer. The insulating cap forms a hollow with the chip to cover the chip. The through electrode passes through a first plane of the cap and a second plane of the cap, the first plane facing the chip, the second plane being on a side opposite to the first plane. The interconnections are provided on the cap and connected to the through electrode. The insulating layer is provided on the cap and fills a portion between the interconnections therewith.
摘要翻译： 半导体模块包括高频芯片，绝缘帽，通孔，互连和绝缘层。 绝缘盖形成具有芯片的中空以覆盖芯片。 所述贯通电极通过所述盖的第一平面和所述盖的第二平面，所述第一平面面向所述芯片，所述第二平面位于与所述第一平面相对的一侧。 互连设置在盖上并连接到通孔。 绝缘层设置在盖上并填充与其互连之间的部分。
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公开(公告)号：US08008760B2
公开(公告)日：2011-08-30
申请号：US12370927
申请日：2009-02-13
IPC分类号： H01L23/02
CPC分类号： H01L25/0655 , B81B7/0054 , B81C1/00238 , H01L21/568 , H01L21/6835 , H01L23/5389 , H01L24/19 , H01L24/82 , H01L25/16 , H01L2224/04105 , H01L2224/12105 , H01L2224/24137 , H01L2224/92144 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/10329 , H01L2924/12044 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2924/15331 , H01L2924/30105 , H01L2924/3511 , H01L2924/00
摘要： An integrated semiconductor device includes a plurality of semiconductor elements having different integrated element circuits or different sizes; an insulating material arranged between the semiconductor elements; an organic insulating film arranged entirely on the semiconductor elements and the insulating material; a fine thin-layer wiring that arranged on the organic insulating film and connects the semiconductor elements; a first input/output electrode arranged on an area of the insulating material; and a first bump electrode formed on the first input/output electrode.
摘要翻译： 集成半导体器件包括具有不同集成元件电路或不同尺寸的多个半导体元件; 布置在所述半导体元件之间的绝缘材料; 完全设置在半导体元件和绝缘材料上的有机绝缘膜; 布置在有机绝缘膜上并连接半导体元件的精细薄层布线; 布置在所述绝缘材料的区域上的第一输入/输出电极; 以及形成在所述第一输入/输出电极上的第一凸块电极。
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公开(公告)号：US20090050988A1
公开(公告)日：2009-02-26
申请号：US12195587
申请日：2008-08-21
申请人： Kazuhiro Suzuki , Michihiko Nishigaki , Yutaka Onozuka , Hiroshi Yamada , Kazuhiko Itaya , Hideyuki Funaki
发明人： Kazuhiro Suzuki , Michihiko Nishigaki , Yutaka Onozuka , Hiroshi Yamada , Kazuhiko Itaya , Hideyuki Funaki
CPC分类号： B81C1/00269 , B81C2203/0145
摘要： A MEMS apparatus includes a MEMS unit formed on a semiconductor substrate and a cover provided with a pore and serving to seal the MEMS unit. The pore is sealed with a sealing material shaped in a sphere or a hemisphere.
摘要翻译： MEMS器件包括形成在半导体衬底上的MEMS单元和设置有孔并用于密封MEMS单元的盖。 孔用密封材料密封，形状为球形或半球形。
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公开(公告)号：US20080318356A1
公开(公告)日：2008-12-25
申请号：US12200177
申请日：2008-08-28
IPC分类号： H01L21/58
CPC分类号： B81C1/0023 , B81C1/00246 , B81C2201/019 , B81C2203/0771 , H01L24/19 , H01L24/24 , H01L24/96 , H01L2224/04105 , H01L2224/12105 , H01L2224/24137 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/01057 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10253 , H01L2924/10329 , H01L2924/1461 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/351 , H01L2924/3511 , H01L2924/00
摘要： It is made possible to provide a highly integrated, thin apparatus can be obtained, even if the apparatus contains MEMS devices and semiconductor devices. A semiconductor apparatus includes: a first chip comprising a MEMS device formed therein; a second chip comprising a semiconductor device formed therein; and an adhesive layer bonding a side face of the first chip to a side face of the second chip, and having a lower Young's modulus than the material of the first and second chips.
摘要翻译： 即使该装置包含MEMS器件和半导体器件，也可以获得高集成度的薄的器件。 一种半导体装置包括：第一芯片，其包括形成在其中的MEMS器件; 包括其中形成的半导体器件的第二芯片; 以及将第一芯片的侧面接合到第二芯片的侧面并且具有比第一芯片和第二芯片的材料更低的杨氏模量的粘合剂层。
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