公开(公告)号：US20090084500A1

公开(公告)日：2009-04-02

申请号：US12326238

申请日：2008-12-02

申请人： Tadashi Sawayama ,  Yasushi Fujioka ,  Masahiro Kanai ,  Shotaro Okabe ,  Yuzo Kohda ,  Tadashi Hori ,  Koichiro Moriyama ,  Hiroyuki Ozaki ,  Yukito Aota ,  Atsushi Koike ,  Mitsuyuki Niwa ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

发明人： Tadashi Sawayama ,  Yasushi Fujioka ,  Masahiro Kanai ,  Shotaro Okabe ,  Yuzo Kohda ,  Tadashi Hori ,  Koichiro Moriyama ,  Hiroyuki Ozaki ,  Yukito Aota ,  Atsushi Koike ,  Mitsuyuki Niwa ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

IPC分类号： C23F1/08 ,  C23C16/00 ,  C23C14/34

CPC分类号： H01L21/67017 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/545 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32844 ,  Y02C20/30 ,  Y02P70/605

摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

摘要翻译： 公开了一种处理衬底或膜的处理装置的废气处理过程，其包括在处理基板或膜之后，将未反应的气体和/或副产物引入陷阱装置， 由包含钨，钼和铼中的至少一种作为主要成分的高熔点金属材料构成的长丝; 以及处理陷阱装置内的未反应气体和/或副产物。 这使得可以防止排气电导降低，延长加工设备的维护周期，并且提供高质量的产品（经处理的基板或膜）。

公开(公告)号：US20090114155A1

公开(公告)日：2009-05-07

申请号：US12327403

申请日：2008-12-03

申请人： Tadashi Sawayama ,  Yasushi Fujioka ,  Masahiro Kanai ,  Shotaro Okabe ,  Yuzo Kohda ,  Tadashi Hori ,  Koichiro Moriyama ,  Hiroyuki Ozaki ,  Yukito Aota ,  Atsushi Koike ,  Mitsuyuki Niwa ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

发明人： Tadashi Sawayama ,  Yasushi Fujioka ,  Masahiro Kanai ,  Shotaro Okabe ,  Yuzo Kohda ,  Tadashi Hori ,  Koichiro Moriyama ,  Hiroyuki Ozaki ,  Yukito Aota ,  Atsushi Koike ,  Mitsuyuki Niwa ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

IPC分类号： C23C16/46

CPC分类号： H01L21/67017 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/545 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32844 ,  Y02C20/30 ,  Y02P70/605

摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

公开(公告)号：US20090095420A1

公开(公告)日：2009-04-16

申请号：US12327428

申请日：2008-12-03

申请人： Tadashi Sawayama ,  Yasushi Fujioka ,  Masahiro Kanai ,  Shotaro Okabe ,  Yuzo Kohda ,  Tadashi Hori ,  Koichiro Moriyama ,  Hiroyuki Ozaki ,  Yukito Aota ,  Atsushi Koike ,  Mitsuyuki Niwa ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

发明人： Tadashi Sawayama ,  Yasushi Fujioka ,  Masahiro Kanai ,  Shotaro Okabe ,  Yuzo Kohda ,  Tadashi Hori ,  Koichiro Moriyama ,  Hiroyuki Ozaki ,  Yukito Aota ,  Atsushi Koike ,  Mitsuyuki Niwa ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

IPC分类号： H01L21/3065 ,  B05C9/08 ,  H01L21/302

CPC分类号： H01L21/67017 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/545 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32844 ,  Y02C20/30 ,  Y02P70/605

摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

公开(公告)号：US5284525A

公开(公告)日：1994-02-08

申请号：US806347

申请日：1991-12-13

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Kohda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Kohda

IPC分类号： H01L31/0236 ,  H01L31/0392 ,  H01L31/075

CPC分类号： H01L31/03921 ,  H01L31/0236 ,  H01L31/075 ,  Y02E10/548

摘要： A solar cell comprising a conductive substrate and semiconductor layers laminated on the conductive substrate, said laminate comprising a p-type layer composed of a non-single crystal Si material, an i-type layer serving as an active layer and an n-type layer, wherein a diamond layer having an uneven surface and containing a valence electron controlling agent is interposed between the conductive substrate and the semiconductor layers.

摘要翻译： 一种太阳能电池，包括导电基板和层叠在导电基板上的半导体层，所述层压体包括由非单晶Si材料构成的p型层，用作有源层的i型层和n型层 其中具有不平坦表面并含有价电子控制剂的金刚石层插入在导电基板和半导体层之间。

公开(公告)号：US5573601A

公开(公告)日：1996-11-12

申请号：US323063

申请日：1994-10-14

申请人： Keishi Saitoh ,  Tatsuyuki Aoike ,  Yasushi Fujioka ,  Masafumi Sano ,  Mitsuyuki Niwa

发明人： Keishi Saitoh ,  Tatsuyuki Aoike ,  Yasushi Fujioka ,  Masafumi Sano ,  Mitsuyuki Niwa

IPC分类号： H01L31/0288 ,  H01L31/0392 ,  H01L31/075

CPC分类号： H01L31/1804 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/0747 ,  H01L31/075 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A pin type photovoltaic element having an electroconductive substrate and a cell stacked with an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor, all composed of a non-single crystal material containing silicon, and featuring an intermediate layer. The intermediate layer composed of non-single material containing silicon atoms as the matrix and atoms of elements belonging to Group IIIA and VA of the periodic table is between the i-type conductor layer and the p-type conductor layer or the n-type semiconductor layer. The intermediate layer may contain carbon atoms and/or germanium atoms.

摘要翻译： 具有导电性基板的pin型光电元件和层叠有n型半导体层，i型半导体层和p型半导体的单元，全部由含有硅的非单晶材料构成，具有中间体 层。 由含有硅原子的非单一材料构成的中间层和属于周期表的IIIA族和VA族的元素的原子在i型导体层和p型导体层或n型半导体之间 层。 中间层可以含有碳原子和/或锗原子。

公开(公告)号：US5244509A

公开(公告)日：1993-09-14

申请号：US741734

申请日：1991-08-07

申请人： Kozo Arao ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Eiji Takeuchi

发明人： Kozo Arao ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Eiji Takeuchi

IPC分类号： H01L31/04 ,  H01L31/0236

CPC分类号： H01L31/0236 ,  Y02E10/50 ,  Y10T428/12472 ,  Y10T428/12576 ,  Y10T428/12611 ,  Y10T428/24479

摘要： A reflective solar cell substrate comprising a base member composed of a metallic material provided with irregularities at the surface thereof and a buffer layer disposed on said base member so as to cover the entire of said irregularities at the surface of said base member, said buffer layer being composed of a substantially transparent or translucent and conductive material, said buffer layer being provided with irregularities at the surface thereof, and said irregularities at the surface of said buffer layer comprising a plurality of thickened convex portions and a plurality of thinned concave portions, said portions being alternately arranged. The reflective solar cell substrate reflects light reaching the substrate without being absorbed by the optically active layer at an effective angle, whereby the solar cell exhibits improved photovoltaic characteristics.

摘要翻译： 一种反射式太阳能电池基板，包括由在其表面设置有凹凸的金属材料构成的基底构件和设置在所述基底构件上的缓冲层，以覆盖所述基底构件的表面上的整个所述凹凸，所述缓冲层 由基本上透明或半透明且导电的材料组成，所述缓冲层在其表面设置有凹凸，并且所述缓冲层表面的所述凹凸包括多个增厚的凸起部分和多个变薄的凹部，所述 交替布置的部分。 反射太阳能电池基板反射到达基板的光，而不会以有效的角度被光学活性层吸收，由此太阳能电池表现出改进的光电特性。

公开(公告)号：US5352300A

公开(公告)日：1994-10-04

申请号：US950288

申请日：1992-09-24

申请人： Mitsuyuki Niwa

发明人： Mitsuyuki Niwa

IPC分类号： C01G9/02 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/04 ,  H01L31/075 ,  H01L31/20 ,  H01L31/06 ,  H01L31/0376

CPC分类号： H01L31/075 ,  H01L31/022466 ,  H01L31/0392 ,  H01L31/03921 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A solar cell having a semiconductor layer has a structure in which a first electrode, a semiconductor layer, and a second electrode are stacked on a substrate, wherein a zinc oxide layer containing a transition metal is located between the semiconductor layer and at least one of the first and second electrodes and the density of the transition metal in the zinc oxide layer is continuously changed within a range of not less than 1 atm. ppm to not more than 5 atm %.

摘要翻译： 具有半导体层的太阳能电池具有将第一电极，半导体层和第二电极堆叠在基板上的结构，其中含有过渡金属的氧化锌层位于半导体层之间，并且至少一个 氧化锌层中的第一电极和第二电极和过渡金属的密度在不小于1个大气压的范围内连续变化。 ppm至不大于5atm％。

公开(公告)号：US5324365A

公开(公告)日：1994-06-28

申请号：US948317

申请日：1992-09-22

申请人： Mitsuyuki Niwa

发明人： Mitsuyuki Niwa

IPC分类号： H01L31/0224 ,  H01L31/075 ,  H01L31/20 ,  H01L31/06

CPC分类号： H01L31/022425 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/20 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A solar cell has a semiconductor layer sandwiched between first and second electrodes, wherein a zinc oxide layer containing carbon atoms, nitrogen atoms, or carbon and nitrogen atoms is located between the semiconductor layer and at least one of the first and second electrodes. The density of carbon atoms, nitrogen atoms, or carbon and nitrogen atoms in the zinc oxide layer is constant or continuously changed within the range of 5 atm % or less.

摘要翻译： 太阳能电池具有夹在第一和第二电极之间的半导体层，其中含有碳原子，氮原子或碳原子和氮原子的氧化锌层位于半导体层与第一和第二电极中的至少一个之间。 氧化锌层中的碳原子，氮原子或碳原子和氮原子的密度在5atm％以下的范围内是恒定的或连续变化的。

公开(公告)号：US5420043A

公开(公告)日：1995-05-30

申请号：US197875

申请日：1994-02-17

申请人： Mitsuyuki Niwa

发明人： Mitsuyuki Niwa

IPC分类号： H01L31/0224 ,  H01L31/075 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/022425 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/20 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A solar cell has a semiconductor layer sandwiched between first and second electrodes, wherein a zinc oxide layer containing carbon atoms, nitrogen atoms, or carbon and nitrogen atoms is located between the semiconductor layer and at least one of the first and second electrodes. The density of carbon atoms, nitrogen atoms, or carbon and nitrogen atoms in the zinc oxide layer is constant or continuously changed within the range of 5 atm % or less.

摘要翻译： 太阳能电池具有夹在第一和第二电极之间的半导体层，其中含有碳原子，氮原子或碳原子和氮原子的氧化锌层位于半导体层与第一和第二电极中的至少一个之间。 氧化锌层中的碳原子，氮原子或碳原子和氮原子的密度在5atm％以下的范围内是恒定的或连续变化的。

公开(公告)号：US5371380A

公开(公告)日：1994-12-06

申请号：US188731

申请日：1994-01-31

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/205 ,  H01L29/16 ,  H01L29/26 ,  H01L45/00

CPC分类号： H01L29/1604 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/263

摘要： A non-single crystalline semiconductor containing at least one kind of atoms selected from the group consisting of silicon atoms (Si) and germanium atoms (Ge) as a matrix, and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and halogen atoms (X), wherein said non-single crystalline semiconductor has an average radius of 3.5 .ANG. or less and a density of 1.times.10.sup.19 (cm.sup.-3) or less as for microvoids contained therein. The non-single crystalline semiconductor excels in semiconductor characteristics and adhesion with other materials and are effectively usable as a constituent element of various semiconductor devices.

摘要翻译： 含有选自硅原子（Si）和锗原子（Ge）作为基体的至少一种原子的非单晶半导体，以及选自氢原子中的至少一种原子（ H）和卤素原子（X），其中所述非单晶半导体的平均半径为3.5AANG或更小，密度为1×1019（cm-3）或更小，对于其中包含的微孔。 非单晶半导体具有优异的半导体特性和与其他材料的粘合性，并且可以有效地用作各种半导体器件的组成元件。