公开(公告)号：US20190326105A1

公开(公告)日：2019-10-24

申请号：US16388439

申请日：2019-04-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/02 ,  C23C16/50 ,  C23C16/44

Abstract: A plasma processing system includes processing modules, a transfer device connected to the processing modules, and a control unit for controlling an oxygen partial pressure and a water vapor partial pressure in the transfer device. The control unit controls the oxygen partial pressure and the water vapor partial pressure in the transfer device to 127 Pa or less and 24.1 Pa or less, respectively. The processing modules include a first processing module for performing etching on the target object, a second processing module for performing surface treatment on the target object, and a third processing module for performing a deposition process on the target object. The second processing module performs the surface treatment using hydrogen radicals generated by a high frequency antenna. The high frequency antenna resonates at one half of a wavelength of a signal supplied from a high frequency power supply used in the processing system.

公开(公告)号：US20170213763A1

公开(公告)日：2017-07-27

申请号：US15416943

申请日：2017-01-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO

IPC: H01L21/768 ,  H01L23/532 ,  C22B15/00 ,  C23C16/455 ,  C23C16/56 ,  H01L23/522 ,  C23C16/40

CPC classification number: H01L21/76886 ,  C23C14/025 ,  C23C16/408 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76871 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/53238

Abstract: In a Cu wiring manufacturing method for manufacturing Cu wiring that fills a recess formed in a predetermined pattern on a surface of an interlayer insulating film of a substrate, a MnOx film that becomes a self-formed barrier film by reaction with the interlayer insulating film is formed at least on a surface of the recess by ALD. A CuOx film that becomes a liner film is formed on a surface of the MnOx film by CVD or ALD. An annealing process is performed on the substrate on which the CuOx film is formed and the CuOx film is reduced to a Cu film by oxidation-reduction reaction between the MnOx film and the CuOx film. A Cu-based film is formed on the Cu film obtained by reducing the CuOx film by PVD to fill the Cu-based film in the recess.

公开(公告)号：US20170062269A1

公开(公告)日：2017-03-02

申请号：US15250109

申请日：2016-08-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Peng CHANG ,  Kenji MATSUMOTO ,  Hiroyuki NAGAI

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/76814 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76823 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238

Abstract: A method of manufacturing a semiconductor device includes preparing a substrate having an interlayer insulating film and a hard mask provided on the interlayer insulating film and having a predetermined pattern, etching the interlayer insulating film to form a trench, forming a MnOx film through an ALD method in a state where the hard mask is left on the interlayer insulating film, the MnOx film being turned into a self-forming barrier film by reacting with the interlayer insulating film, performing a hydrogen radical processing on the MnOx film, forming a Ru film through a CVD method, forming a Cu-based film through a PVD method or by forming a Cu seed through the PVD method, and then performing a Cu plating processing so as to embed the Cu-based film within the trench, and performing a CMP method to remove the hard mask and to form a Cu wiring.

Abstract translation: 一种制造半导体器件的方法包括制备具有层间绝缘膜和设置在层间绝缘膜上并具有预定图案的硬掩模的衬底，蚀刻层间绝缘膜以形成沟槽，通过ALD法形成MnO x膜 在硬掩模留在层间绝缘膜上的状态下，MnO x膜通过与层间绝缘膜反应而变成自形成阻挡膜，对MnO x膜进行氢自由基加工，形成Ru膜通过 CVD方法，通过PVD法形成Cu基膜或通过PVD法形成Cu种子，然后进行Cu电镀处理以将Cu基膜包埋在沟槽内，并进行CMP方法 以去除硬掩模并形成Cu布线。

公开(公告)号：US20160276218A1

公开(公告)日：2016-09-22

申请号：US15072165

申请日：2016-03-16

Applicant: Tokyo Electron Limited

Inventor： Kenji MATSUMOTO ,  Tadahiro ISHIZAKA ,  Peng CHANG ,  Osamu YOKOYAMA ,  Takashi SAKUMA ,  Hiroyuki NAGAI

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L23/53238 ,  H01L21/28556 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843

Abstract: In a Cu wiring manufacturing method, a MnOx film which becomes a self-formed barrier film by reaction with an interlayer insulating film of a substrate is formed on a surface of a recess formed in the interlayer insulating film by ALD. A hydrogen radical process is performed on a surface of the MnOx film to reduce the surface of the MnOx film. A Ru film is formed by CVD on the surface of the MnOx film which has been reduced by the hydrogen radical process. A Cu-based film is formed on the Ru film by PVD to be filled in the recess. When the Ru film is formed, a film-formation condition of the MnOx film and a condition of the hydrogen radical process are set such that nucleus formation is facilitated and the Ru film is formed in a state where a surface smoothness is high.

Abstract translation: 在Cu布线制造方法中，通过ALD形成在层间绝缘膜的凹部的表面上，形成通过与基板的层间绝缘膜反应而成为自形成的阻挡膜的MnO x膜。 在MnO x膜的表面上进行氢自由基处理以减少MnO x膜的表面。 在通过氢自由基还原的MnO x膜的表面上通过CVD形成Ru膜。 通过PVD在Ru膜上形成Cu基膜以填充在凹部中。 当形成Ru膜时，设定MnO x膜的成膜条件和氢自由基工艺的条件，使得形成核容易，并且在表面光滑度高的状态下形成Ru膜。

公开(公告)号：US20150110975A1

公开(公告)日：2015-04-23

申请号：US14566807

申请日：2014-12-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO ,  Kaoru MAEKAWA ,  Tatsufumi HAMADA ,  Hiroyuki NAGAI

IPC: C23C16/455 ,  C23C16/42 ,  C23C16/34 ,  C23C16/48 ,  C23C16/40

CPC classification number: C23C16/45553 ,  C23C14/14 ,  C23C14/34 ,  C23C16/02 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40 ,  C23C16/401 ,  C23C16/42 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45536 ,  C23C16/481 ,  H01L21/02126 ,  H01L21/02175 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76855 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a manganese-containing film to be formed between an underlayer and a copper film includes reacting a manganese compound gas with a nitrogen-containing reaction gas to form a nitrogen-containing manganese film on the underlayer; and reacting a manganese compound gas with a reducing reaction gas, thermally decomposing a manganese compound gas, or performing a decomposition reaction on a manganese compound gas through irradiation of energy or active species to form a metal manganese film on the nitrogen-containing manganese film.

Abstract translation: 在底层和铜膜之间形成含锰膜的方法包括使锰化合物气体与含氮反应气体反应以在底层上形成含氮锰膜; 使锰化合物气体与还原反应气体反应，热分解锰化合物气体，或通过能量或活性物质的照射对锰化合物气体进行分解反应，在含氮锰膜上形成金属锰膜。

公开(公告)号：US20140374904A1

公开(公告)日：2014-12-25

申请号：US14478436

申请日：2014-09-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO ,  Kaoru MAEKAWA ,  Hiroaki KAWASAKI ,  Tatsufumi HAMADA

IPC: H01L23/482 ,  H01L21/324 ,  C25D7/12 ,  C23C16/06 ,  C23C16/44 ,  H01L21/306 ,  H01L21/48

CPC classification number: H01L23/4827 ,  C23C16/06 ,  C23C16/4402 ,  C25D7/12 ,  H01L21/306 ,  H01L21/324 ,  H01L21/4814 ,  H01L21/67766 ,  H01L21/76807 ,  H01L21/76816 ,  H01L21/76864 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure provides a semiconductor device, including: an insulation layer and a wiring line layer, the wiring line layer including a wiring line having a line width and a line height, at least one of which is 15 nm or less, and containing Ni or Co as a main component thereof. In another embodiment, there is provided a semiconductor device manufacturing method for manufacturing a semiconductor device including an insulation layer and a wiring line layer, including: forming the wiring line layer on the insulation layer, the wiring line layer including a wiring line having a line width and a line height, at least one of which is 15 nm or less, and containing Ni or Co as a main component thereof.

Abstract translation: 本发明提供一种半导体器件，包括：绝缘层和布线层，所述布线线层包括具有线宽和线高度的布线，其至少一个为15nm以下，并且包含Ni 或Co作为其主要成分。 在另一实施例中，提供一种用于制造包括绝缘层和布线层的半导体器件的半导体器件制造方法，包括：在绝缘层上形成布线层，布线线层包括具有线的布线 宽度和线高度，其中至少一个为15nm或更小，并且包含Ni或Co作为其主要成分。

公开(公告)号：US20190272997A1

公开(公告)日：2019-09-05

申请号：US16308428

申请日：2017-06-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru TAHARA ,  Daisuke URAYAMA ,  Kenji MATSUMOTO ,  Hidenori MIYOSHI

IPC: H01L21/3065 ,  C23F4/00 ,  H01L21/3213 ,  H01L23/532 ,  H05H1/46

Abstract: A method MT in an embodiment is a method for etching an etching target layer EL which is included in a wafer W and contains copper. The wafer W includes the etching target layer EL, and a mask MK provided on the etching target layer EL. In the method MT, the etching target layer EL is etched by repeatedly executing a sequence SQ including a first step of generating a plasma of a first gas in a processing container 12 of a plasma processing apparatus 10 in which the wafer W is accommodated, a second step of generating a plasma of a second gas in the processing container 12, and a third step of generating a plasma of a third gas in the processing container 12. The first gas contains a hydrocarbon gas, the second gas contains either a rare gas or a mixed gas of a rare gas and hydrogen gas, and the third gas contains hydrogen gas.

公开(公告)号：US20150262872A1

公开(公告)日：2015-09-17

申请号：US14642331

申请日：2015-03-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro ISHIZAKA ,  Takashi SAKUMA ,  Osamu YOKOYAMA ,  Kenji MATSUMOTO ,  Peng CHANG ,  Hiroyuki NAGAI

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285

CPC classification number: H01L21/76877 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a copper wiring buried in a recess portion of a predetermined pattern formed in an interlayer insulation layer of a substrate is disclosed. The method includes: forming a manganese oxide film at least on a surface of the recess portion, the manganese oxide film serving as a self-aligned barrier film through reaction with the interlayer insulation layer; performing hydrogen radical treatment with respect to a surface of the manganese oxide film; placing a metal more active than ruthenium on the surface of the manganese oxide film after the hydrogen radical treatment; forming a ruthenium film on the surface where the metal more active than ruthenium is present; and forming a copper film on the ruthenium film by physical vapor deposition (PVD) to bury the copper film in the recess portion.

Abstract translation: 公开了一种埋设在衬底的层间绝缘层中形成的预定图案的凹部中的铜布线的形成方法。 该方法包括：通过与层间绝缘层反应，至少在凹部的表面上形成氧化锰膜，氧化锰膜作为自对准阻挡膜; 相对于氧化锰膜的表面进行氢自由基处理; 在氧自由基处理之后，将比钌更金属的氧化物膜置于氧化锰膜的表面上; 在其上存在比钌更有活性的金属的表面上形成钌膜; 并通过物理气相沉积（PVD）在钌膜上形成铜膜以将铜膜埋入凹部中。

公开(公告)号：US20140183743A1

公开(公告)日：2014-07-03

申请号：US14140889

申请日：2013-12-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO ,  Peng CHANG

IPC: H01L21/768 ,  H01L23/482

CPC classification number: H01L21/28556 ,  C23C16/18 ,  C23C16/40 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76867 ,  H01L21/76882 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A manganese metal film forming method includes: degassing an underlying layer formed on a processing target by thermally treating the processing target, the underlying layer containing silicon and oxygen; and forming a manganese metal film on the degassed underlying layer by chemical deposition using a gas containing a manganese compound. Forming a manganese metal film includes introducing a gas containing an oxidizing agent to form a partially-oxidized manganese metal film.

Abstract translation: 锰金属膜形成方法包括：通过热处理处理目标，含有硅和氧的下层，对形成在处理目标上的下层进行脱气; 以及通过使用含有锰化合物的气体进行化学沉积在脱气的下层上形成锰金属膜。 形成锰金属膜包括引入含氧化剂的气体以形成部分氧化的锰金属膜。

公开(公告)号：US20140183742A1

公开(公告)日：2014-07-03

申请号：US14139089

申请日：2013-12-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76846 ,  H01L21/28556 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76855 ,  H01L21/76867 ,  H01L21/76882 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A manganese-containing film forming method for forming a manganese-containing film on an underlying layer containing silicon and oxygen includes: degassing the underlying layer formed on a processing target by thermally treating the processing target, the underlying layer containing silicon and oxygen; and forming a manganese metal film on the degassed underlying layer by chemical deposition using a gas containing a manganese compound. Forming a manganese metal film includes: setting a film formation temperature to be higher than a degassing temperature; introducing a reducing reaction gas; and forming a manganese-containing film including an interfacial layer formed in an interface with the underlying layer and a manganese metal film formed on the interfacial layer, the interfacial layer being made up of a film of at least one of a manganese silicate and a manganese oxide.

Abstract translation: 在含有硅和氧的下层上形成含锰膜的含锰膜形成方法包括：通过热处理处理目标，含有硅和氧的下层，对形成在处理目标上的下层进行脱气; 以及通过使用含有锰化合物的气体进行化学沉积在脱气的下层上形成锰金属膜。 形成锰金属膜包括：将成膜温度设定为高于脱气温度; 引入还原反应气体; 以及形成包含与下层形成界面的界面层和在界面层上形成的锰金属膜的含锰膜，所述界面层由硅酸锰和锰中的至少一种的膜构成 氧化物。