公开(公告)号：US20230187214A1

公开(公告)日：2023-06-15

申请号：US17550651

申请日：2021-12-14

申请人： Tokyo Electron Limited

发明人： Peter Lowell George Ventzek ,  Alok Ranjan ,  Mitsunori Ohata

IPC分类号： H01L21/3065 ,  H01J37/32

CPC分类号： H01L21/3065 ,  H01J37/32146 ,  H01J37/3244 ,  H01J37/32522 ,  H01J2237/334

摘要： A method of etching a substrate that includes: generating a first plasma from a first gas flowing into a first chamber by applying a first power pulse to a first electrode located in the first chamber over a first time duration; and forming a recess in a substrate located in a second chamber, the forming including: providing radicals from the first chamber into the second chamber; applying a plurality of second power pulses to a second electrode located in the second chamber during a second time duration to generate a second plasma in the second chamber from a second gas flowing into the second chamber, the first chamber being pressurized higher than the second chamber; and applying a plurality of third power pulses to a third electrode located in the second chamber during a third time duration to accelerate ions of the second plasma.

公开(公告)号：US11450515B2

公开(公告)日：2022-09-20

申请号：US17030522

申请日：2020-09-24

申请人： TOKYO ELECTRON LIMITED

发明人： Kazuya Nagaseki ,  Shinji Himori ,  Mitsunori Ohata

IPC分类号： H01J37/32 ,  H01L21/67

摘要： An apparatus includes a plasma processing container; a workpiece placement table disposed in the plasma processing container; a dielectric member having a facing surface that faces the workpiece placement table; an antenna provided on a surface of the dielectric member opposite to the facing surface and configured to introduce an induced electric field for plasma excitation into the plasma processing container via the dielectric member; an electromagnet group disposed along an outer circumference of the plasma processing container and configured to form a magnetic field in the plasma processing container; and a controller configured to control magnitudes of electric currents flowing through respective electromagnets of the electromagnet group differently from each other, to generate a magnetic gradient along a circumferential direction in the magnetic field that exists only in an outer circumferential space in the plasma processing container.

公开(公告)号：US20220028695A1

公开(公告)日：2022-01-27

申请号：US17483346

申请日：2021-09-23

申请人： Tokyo Electron Limited

发明人： Alok Ranjan ,  Peter Ventzek ,  Mitsunori Ohata

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01L21/67 ,  H01L21/3213

摘要： A plasma processing apparatus includes a processing chamber, a source power coupling element configured to generate plasma in the processing chamber, and a source power supply node coupled to the source power coupling element and configured to supply radio frequency power to the source power coupling element. The plasma processing apparatus further includes a substrate holder disposed in the processing chamber, a first bias power supply node coupled to the substrate holder and configured to supply first direct current biased power to the substrate holder, and a second bias power supply node coupled to the substrate holder and configured to supply second direct current biased power to the substrate holder. The first direct current biased power includes a first bias power frequency less than about 800 kHz and the second direct current biased power includes a second bias power frequency greater than 800 kHz.

公开(公告)号：US10020172B2

公开(公告)日：2018-07-10

申请号：US14721090

申请日：2015-05-26

申请人： Tokyo Electron Limited

发明人： Mitsunori Ohata ,  Hidetoshi Kimura ,  Kiyoshi Maeda ,  Jun Hirose ,  Tsuyoshi Hida

IPC分类号： H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  C23C16/52

CPC分类号： H01J37/32642 ,  C23C16/52 ,  H01J37/32091 ,  H01L21/67069 ,  H01L21/68735

摘要： There is provided a plasma processing apparatus including a susceptor, having a substrate mounting portion for mounting thereon a substrate; a focus ring including an outer ring and an inner ring; a dielectric ring; a dielectric constant varying device for varying a dielectric constant of the dielectric ring; a grounding body positioned at an outside of the dielectric ring with a gap from a bottom surface of the focus ring; and a controller for controlling a top surface electric potential of the focus ring by controlling a current flowing from the susceptor to the substrate.

公开(公告)号：US20240258074A1

公开(公告)日：2024-08-01

申请号：US18162876

申请日：2023-02-01

申请人： Tokyo Electron Limited

发明人： Chelsea DuBose ,  Barton Lane ,  Justin Moses ,  Merritt Funk ,  Mitsunori Ohata

IPC分类号： H01J37/32

CPC分类号： H01J37/3222 ,  H01J2237/327

摘要： According to an embodiment, a plasma processing system includes a plasma chamber, a planar antenna, a dielectric plate, and a plurality of magnets. The planar antenna is configured to generate plasma within the plasma chamber. The dielectric plate is disposed between the plasma chamber and the planar antenna. The magnets are arranged vertically above an outer surface of the dielectric plate that faces the plasma chamber.

公开(公告)号：US20210027991A1

公开(公告)日：2021-01-28

申请号：US16521340

申请日：2019-07-24

申请人： Tokyo Electron Limited

发明人： Peter Ventzek ,  Alok Ranjan ,  Mitsunori Ohata ,  Michael Hummel

IPC分类号： H01J37/32 ,  H01L21/02 ,  H01L21/3213

摘要： In one embodiment, a plasma processing system includes a plasma processing chamber, a substrate holder disposed in the plasma processing chamber, a coil disposed over the plasma processing chamber, and a plurality of taps configured to contact the coil at an associated contact region. The plasma processing system is configured to sustain a plasma by selecting a subset of taps from the plurality of taps to apply a power source and a reference potential.

公开(公告)号：US20210020405A1

公开(公告)日：2021-01-21

申请号：US16515513

申请日：2019-07-18

申请人： Tokyo Electron Limited

发明人： Peter Ventzek ,  Mitsunori Ohata ,  Alok Ranjan

IPC分类号： H01J37/32 ,  H01L21/3213 ,  C23C16/455

摘要： In one embodiment, a plasma processing apparatus includes a plasma processing chamber that includes a first portion and a second portion. The first portion includes sidewalls and a top cover having a through hole. The second portion is coupled to the first portion via the through hole. A substrate holder is disposed in the first portion of the plasma processing chamber. A first coil is disposed over the first portion and a second coil is disposed over the first portion and around the second portion.

公开(公告)号：US10685816B2

公开(公告)日：2020-06-16

申请号：US15775218

申请日：2016-11-11

申请人： TOKYO ELECTRON LIMITED

发明人： Yoshihiro Umezawa ,  Jun Sato ,  Kiyoshi Maeda ,  Mitsunori Ohata ,  Kazuya Matsumoto

IPC分类号： H01J37/32 ,  C23F4/00 ,  H01L43/12 ,  H01F41/34 ,  H01F10/32 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  H01F41/30

摘要： A method MT includes etching a wafer W using plasma generated in a processing container. The etching includes a process of inclining and rotating a holding structure holding the wafer W during execution of the etching and the process successively creating a plurality of inclined rotation states RT(φ, t) with respect to the holding structure. In the inclined rotation states, the wafer W is rotated about a central axis of the wafer W over a predetermined process time while maintaining a state where the central axis is inclined with respect to a reference axis of the processing container which is in the same plane as the central axis. A combination of a value φ of an inclination angle AN of the central axis with respect to the reference axis and the process time t differs for each of the plurality of inclined rotation states.

公开(公告)号：US20240363310A1

公开(公告)日：2024-10-31

申请号：US18308877

申请日：2023-04-28

申请人： Tokyo Electron Limited

发明人： Qiang Wang ,  Michael Hummel ,  Peter Lowell George Ventzek ,  Shyam Sridhar ,  Mitsunori Ohata

IPC分类号： H01J37/32 ,  H01Q5/10

CPC分类号： H01J37/32183 ,  H01J37/32091 ,  H01Q5/10

摘要： According to an embodiment, a plasma processing system includes a plasma chamber, an RF source, a matching circuit, a balun, and a resonating antenna. The resonating antenna includes a first and a second spiral resonant antenna (SRA), each having an electrical length corresponding to a quarter of a wavelength of a frequency of a forward RF wave generated by the RF source. The first end of the first SRA is coupled to a first balanced terminal of the balun and the second end of the first SRA is open circuit. The first end of the second SRA is coupled to a second balanced terminal of the balun and the second end of the second SRA is open circuit. The first and the second SRA are arranged in a symmetrically nested configuration having a same center point.

公开(公告)号：US11521834B2

公开(公告)日：2022-12-06

申请号：US17003734

申请日：2020-08-26

申请人： Tokyo Electron Limited

发明人： Peter Ventzek ,  Alok Ranjan ,  Mitsunori Ohata

IPC分类号： H01J37/32

摘要： A plasma processing system includes a radical source chamber including a gas inlet, an electrode coupled to a radio frequency (RF) power source, where the electrode is configured to generate radicals within the radical source chamber, and an exit for radicals generated within the radical source chamber; a plenum attached to the exit of the radical source chamber, where the plenum is made of a first thermal conductor, and where the walls of the plenum include openings for gas flow; and a process chamber connected to the radical source chamber through the plenum. The process chamber includes a substrate holder disposed below the plenum; a gas outlet below the substrate holder; and process chamber walls including a second thermal conductor, where the process chamber walls of the process chamber are thermally coupled to the walls of the plenum.