公开(公告)号：US20240194413A1

公开(公告)日：2024-06-13

申请号：US18078779

申请日：2022-12-09

Applicant: Wolfspeed, Inc.

Inventor： Jeremy Fisher ,  Marvin Marbell ,  Haedong Jang

IPC: H01G4/40 ,  H01F27/28 ,  H01F27/29 ,  H01G4/228 ,  H01G4/33 ,  H01G4/38 ,  H01L25/16

CPC classification number: H01G4/40 ,  H01F27/2804 ,  H01F27/292 ,  H01G4/228 ,  H01G4/33 ,  H01G4/38 ,  H01L25/16 ,  H01L28/10 ,  H01L28/60 ,  H01L24/48 ,  H01L2924/1423 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105

Abstract: A device according to some embodiments includes a first IPD die including a first SiC substrate. The first IPD die has a first surface and a second surface on the first SiC substrate opposite the first surface and includes a first contact and at least one first metal portion on the respective surfaces of the first SiC substrate. The device further includes a second IPD die including a second SiC substrate. The second IPD die has a third surface and a fourth surface on the second SiC substrate opposite the third surface and includes a second contact and at least one second metal portion on the respective surfaces of the second SiC substrate. The device further includes an electrical interconnection structure between one of the first and second surfaces of the first IPD die and one of the third and fourth surfaces of the second IPD die.

公开(公告)号：US11791389B2

公开(公告)日：2023-10-17

申请号：US17144346

申请日：2021-01-08

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Jia Guo ,  Jeremy Fisher ,  Scott Sheppard

IPC: H01L29/417 ,  H01L23/66 ,  H01L29/20 ,  H01L29/40 ,  H01L29/778 ,  H03F3/195 ,  H03F3/213

CPC classification number: H01L29/41775 ,  H01L23/66 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/7786 ,  H03F3/195 ,  H03F3/213 ,  H01L2223/6644 ,  H01L2223/6683 ,  H03F2200/451

Abstract: A gallium nitride-based RF transistor amplifier comprises a semiconductor layer structure comprising a barrier layer on a channel layer, first and second source/drain regions in the semiconductor layer structure, first and second source/drain contacts on the respective first and second source/drain regions, and a longitudinally-extending gate finger that is between the first and second source/drain contacts. The first and second source/drain contacts each has an inner sidewall that faces the gate finger and an opposed outer sidewall. The first source/drain region extends a first distance from a lower edge of the inner sidewall of the first source/drain contact towards the second source/drain region along a transverse axis that extends parallel to a plane defined by the upper surface of the semiconductor layer structure, and extends a second, smaller distance from a lower edge of the outer sidewall of the first source/drain contact away from the second source/drain region.

公开(公告)号：US20230291367A1

公开(公告)日：2023-09-14

申请号：US17688952

申请日：2022-03-08

Applicant: Wolfspeed, Inc.

Inventor： Jeremy Fisher ,  Dan Namishia ,  Scott Sheppard

IPC: H03F3/195 ,  H03F1/56 ,  H01L23/66

CPC classification number: H03F3/195 ,  H03F1/565 ,  H01L23/66 ,  H03F2200/451 ,  H01L2223/6655

Abstract: Semiconductor devices are provided that include a Group III nitride-based semiconductor layer structure. A first metal layer is formed on an upper surface of the semiconductor layer structure, a first dielectric layer is formed on an upper surface of the first metal layer, and a second metal layer is formed on an upper surface of the first dielectric layer. The first metal layer, the first dielectric layer and the second metal layer form a first capacitor. A second dielectric layer is formed on an upper surface of the second metal layer, a third dielectric layer is formed on an upper surface of the second dielectric layer, and a third metal layer is formed on upper surfaces of the second and third dielectric layers. The second metal layer, the second dielectric layer and the third metal layer form a second capacitor that is stacked on the first capacitor.

公开(公告)号：US11658234B2

公开(公告)日：2023-05-23

申请号：US17325576

申请日：2021-05-20

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Terry Alcorn ,  Dan Namishia ,  Jia Guo ,  Matt King ,  Saptharishi Sriram ,  Jeremy Fisher ,  Fabian Radulescu ,  Scott Sheppard ,  Yueying Liu

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/40

CPC classification number: H01L29/7786 ,  H01L29/402 ,  H01L29/66462

Abstract: A transistor device includes a semiconductor epitaxial layer structure including a channel layer and a barrier layer on the channel layer, a source contact and a drain contact on the barrier layer, an insulating layer on the semiconductor layer between the source contact and the drain contact, and a gate contact on the insulating layer. The gate contact includes a central portion that extends through the insulating layer and contacts the barrier layer and a drain side wing that extends laterally from the central portion of the gate toward the drain contact by a distance ΓD. The drain side wing of the gate contact is spaced apart from the barrier layer by a distance d1 that is equal to a thickness of the insulating layer. The distance ΓD is less than about 0.3 μm, and the distance d1 is less than about 80 nm.

公开(公告)号：US20240266348A1

公开(公告)日：2024-08-08

申请号：US18105586

申请日：2023-02-03

Applicant: Wolfspeed, Inc.

Inventor： Fabian Radulescu ,  Basim Noori ,  Scott Sheppard ,  Qianli Mu ,  Jeremy Fisher ,  Dan Namishia

IPC: H01L27/085 ,  H01L23/00 ,  H01L23/528

CPC classification number: H01L27/085 ,  H01L23/528 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0603 ,  H01L2224/0615 ,  H01L2224/13014 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/1415 ,  H01L2224/16227

Abstract: A transistor device includes a substrate and a plurality of transistor unit cells arranged in parallel on the substrate. Each of the transistor unit cells includes a source contact, a drain contact, and a gate finger between the source contact and the drain contact. The gate finger extends in a first direction and has a first end and a second end. The transistor device further includes a first solder bump on the transistor device that is within a periphery of the active region of the device and is electrically connected to the gate finger of a first one of the unit cells at a feed point that is between the first end and the second end of the gate finger.

公开(公告)号：US20240106397A1

公开(公告)日：2024-03-28

申请号：US17934698

申请日：2022-09-23

Applicant: Wolfspeed, Inc.

Inventor： Marvin Marbell ,  Jeremy Fisher ,  Haedong Jang ,  Daniel Namishia ,  Daniel Etter

IPC: H03F3/195 ,  H01L23/66 ,  H03F1/56 ,  H03F3/24

CPC classification number: H03F3/195 ,  H01L23/66 ,  H03F1/565 ,  H03F3/245 ,  H01L2223/6611 ,  H01L2223/6655 ,  H03F2200/451

Abstract: A transistor amplifier package includes a package substrate comprising conductive patterns exposed by solder mask patterns at a surface thereof, and at least one transistor die comprising a semiconductor structure attached to the surface of the package substrate by a solder material and aligned by the solder mask patterns such that respective gate, drain, and/or source terminals of the at least one transistor die are electrically connected to respective ones of the conductive patterns. Related transistor amplifiers and fabrication methods are also discussed.

公开(公告)号：US20220328634A1

公开(公告)日：2022-10-13

申请号：US17848984

申请日：2022-06-24

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Jia Guo ,  Yueying Liu ,  Jeremy Fisher ,  Scott T. Sheppard

IPC: H01L29/20 ,  H01L29/778 ,  H01L29/40 ,  H01L29/423

Abstract: A transistor device includes a first unit subcell including having a first active region width extending in a first direction, and a second unit subcell having a second active region width extending in the first direction and arranged adjacent the first unit subcell in the first direction. The first unit subcell and the second unit subcell share a common drain contact and have separate gate contacts that are aligned in the first direction. Each unit subcell includes a field plate that is connected to a source contact outside the active region and that does not cross over the gate contact.

公开(公告)号：US12230614B2

公开(公告)日：2025-02-18

申请号：US17555015

申请日：2021-12-17

Applicant: WOLFSPEED, INC.

Inventor： Marvin Marbell ,  Haedong Jang ,  Jeremy Fisher ,  Basim Noori

IPC: H01L25/16 ,  H01L23/00

Abstract: A transistor device includes a metal submount; a transistor die arranged on said metal submount; a first integrated passive device (IPD) component that includes a first substrate arranged on said metal submount; and a second integrated passive device (IPD) component that includes a second substrate arranged on the metal submount. Additionally, the first substrate is a different material from the second substrate.

公开(公告)号：US12183669B2

公开(公告)日：2024-12-31

申请号：US17554971

申请日：2021-12-17

Applicant: WOLFSPEED, INC.

Inventor： Jeremy Fisher

IPC: H01L23/52 ,  H01L23/522 ,  H01L23/64 ,  H01L27/08 ,  H01L49/02

Abstract: A metal-insulator-metal (MIM) capacitor component that includes a substrate, where the metal-insulator-metal (MIM) capacitor component is configured to form a first capacitor with a top metal and a first bottom metal having a dielectric layer therebetween; and where the metal-insulator-metal (MIM) capacitor component is configured to form a second capacitor with the top metal and a second bottom metal having the dielectric layer therebetween. Additionally, the top metal, the dielectric layer, the first bottom metal, and the second bottom metal are arranged on the substrate.

公开(公告)号：US20240105763A1

公开(公告)日：2024-03-28

申请号：US17952267

申请日：2022-09-25

Applicant: Wolfspeed, Inc.

Inventor： Jeremy Fisher ,  Marvin Marbell ,  Dan Namishia ,  Dan Etter

IPC: H01L49/02 ,  H01L23/522 ,  H01L23/66 ,  H01L29/20 ,  H01L29/778

CPC classification number: H01L28/40 ,  H01L23/5223 ,  H01L23/66 ,  H01L29/2003 ,  H01L29/7783 ,  H01L29/7787

Abstract: A device according to some embodiments includes a metal-insulator-metal (MIM) capacitor including a substrate, an upper metal plate, and a lower metal surface attached to a first surface of the substrate. The upper metal plate of the MIM capacitor is configured to serve as a wire bonding surface. Other embodiments include an RF transistor package and a device including a MIM capacitor that includes at least one via.