公开(公告)号：US4447805A

公开(公告)日：1984-05-08

申请号：US349909

申请日：1982-02-18

申请人： Yoshihiro Omae ,  Noboru Okubo ,  Keiichi Sigyo ,  Hideo Nakajima ,  Hiroaki Fukui ,  Toshio Yamada ,  Hideyuki Honda

发明人： Yoshihiro Omae ,  Noboru Okubo ,  Keiichi Sigyo ,  Hideo Nakajima ,  Hiroaki Fukui ,  Toshio Yamada ,  Hideyuki Honda

IPC分类号： C10B45/00 ,  F27D21/00 ,  G01J5/00 ,  G08B1/08 ,  C10B47/00

CPC分类号： G01J5/02 ,  C10B45/00 ,  F27D21/00 ,  F27D21/0014 ,  G01J5/0044 ,  G01J5/025 ,  G01J5/04 ,  G01J5/047

摘要： In an array of coke ovens each including a plurality of combustion chambers having a plurality of flue nozzles, a measuring car equipped with a temperature measuring member runs above the array in a direction of the array or in a longitudinal direction of the combustion chambers so as to detect thermal radiations passing through the flue nozzles to measure combustion chamber temperature. The measured temperature is sent to a remote control room through antennae. Where a coal charging car of a Rahmen construction is used an antenna is also provided for the coal charging car so that even when the measuring car runs beneath the coal charging car, radio communication can be assured. The temperature of the combustion chambers can be readily and accurately measured by linearly running the measuring car whether combustion is effected in one or the other side of the combustion chambers.

摘要翻译： 在具有多个烟道喷嘴的多个燃烧室的焦炉的阵列中，配备有温度测量部件的测量车沿阵列的方向在燃烧室的方向上或沿燃烧室的纵向方向上行进，以便 以检测通过烟道喷嘴的热辐射以测量燃烧室温度。 测量的温度通过天线发送到遥控室。 在采用拉赫门建筑的充煤车的情况下，还为煤矿车辆提供天线，使得即使测量车在充煤车下面运行，也可确保无线电通信。 燃烧室的温度可以通过线性运行测量车来容易且精确地测量，无论燃烧是在燃烧室的一侧还是另一侧进行。

公开(公告)号：US20080277793A1

公开(公告)日：2008-11-13

申请号：US12111383

申请日：2008-04-29

申请人： Takashi Noma ,  Hiroyuki Shinogi ,  Noboru Okubo

发明人： Takashi Noma ,  Hiroyuki Shinogi ,  Noboru Okubo

IPC分类号： H01L23/485 ,  H01L21/768 ,  H01L21/58

CPC分类号： H01L23/3114 ,  H01L21/6835 ,  H01L23/3185 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L25/50 ,  H01L27/14618 ,  H01L27/14683 ,  H01L2224/0401 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06586 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00

摘要： A semiconductor device with improved moisture resistance and its manufacturing method as well as a manufacturing method of a semiconductor device which simplifies a manufacturing process and improves productivity are offered. This invention offers a CSP type semiconductor device and its manufacturing method that can prevent moisture and the like from infiltrating into it to attain high reliability by covering a side surface of a semiconductor chip with a thick protection layer. This invention also offers a highly productive manufacturing method of semiconductor devices by which a supporter bonded to semiconductor dice is etched from a back surface-side of the supporter so that the semiconductor devices can be separated without dicing.

摘要翻译： 提供了一种具有改善的耐湿性的半导体器件及其制造方法以及简化制造工艺并提高生产率的半导体器件的制造方法。 本发明提供一种CSP型半导体器件及其制造方法，其可以通过用厚保护层覆盖半导体芯片的侧表面来防止水分等渗入其中以获得高可靠性。 本发明还提供了一种高效率的半导体器件的制造方法，通过该半导体器件，从支撑体的背面侧蚀刻与半导体晶片接合的支撑体，使得可以在不切割的情况下分离半导体器件。

公开(公告)号：US20070145590A1

公开(公告)日：2007-06-28

申请号：US11639411

申请日：2006-12-15

申请人： Takashi Noma ,  Kazuo Okada ,  Shinzo Ishibe ,  Katsuhiko Kitagawa ,  Yuichi Morita ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

发明人： Takashi Noma ,  Kazuo Okada ,  Shinzo Ishibe ,  Katsuhiko Kitagawa ,  Yuichi Morita ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

IPC分类号： H01L23/52

CPC分类号： H01L27/14618 ,  H01L27/14636 ,  H01L31/0203 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/10 ,  H01L2924/00014

摘要： This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.

摘要翻译： 本发明提供一种半导体器件，其解决了形成在半导体衬底的背面上的布线的图案在输出图像上反射的问题。 在半导体衬底的前表面上形成有光接收元件（例如CCD，红外线传感器，CMOS传感器或照明传感器），并且多个球形导电端子设置在 半导体衬底。 每个导电端子通过布线层电连接到半导体衬底的前表面上的焊盘电极。 布线层和导电端子形成在除了在垂直方向上与光接收元件重叠的区域之外的半导体基板的背面上，并且不布置在与光接收元件重叠的区域中。

公开(公告)号：US07969007B2

公开(公告)日：2011-06-28

申请号：US12111383

申请日：2008-04-29

申请人： Takashi Noma ,  Hiroyuki Shinogi ,  Noboru Okubo

发明人： Takashi Noma ,  Hiroyuki Shinogi ,  Noboru Okubo

IPC分类号： H01L23/485

CPC分类号： H01L23/3114 ,  H01L21/6835 ,  H01L23/3185 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L25/50 ,  H01L27/14618 ,  H01L27/14683 ,  H01L2224/0401 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06586 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00

摘要： A semiconductor device with improved moisture resistance and its manufacturing method as well as a manufacturing method of a semiconductor device which simplifies a manufacturing process and improves productivity are offered. This invention offers a CSP type semiconductor device and its manufacturing method that can prevent moisture and the like from infiltrating into it to attain high reliability by covering a side surface of a semiconductor chip with a thick protection layer. This invention also offers a highly productive manufacturing method of semiconductor devices by which a supporter bonded to semiconductor dice is etched from a back surface-side of the supporter so that the semiconductor devices can be separated without dicing.

摘要翻译： 提供了一种具有改善的耐湿性的半导体器件及其制造方法以及简化制造工艺并提高生产率的半导体器件的制造方法。 本发明提供一种CSP型半导体器件及其制造方法，其可以通过用厚保护层覆盖半导体芯片的侧表面来防止水分等渗入其中以获得高可靠性。 本发明还提供了一种高效率的半导体器件的制造方法，通过该半导体器件，从支撑体的背面侧蚀刻与半导体晶片接合的支撑体，使得可以在不切割的情况下分离半导体器件。

公开(公告)号：US08766408B2

公开(公告)日：2014-07-01

申请号：US11714906

申请日：2007-03-07

申请人： Takashi Noma ,  Shigeki Otsuka ,  Yuichi Morita ,  Kazuo Okada ,  Hiroshi Yamada ,  Katsuhiko Kitagawa ,  Noboru Okubo ,  Shinzo Ishibe ,  Hiroyuki Shinogi

发明人： Takashi Noma ,  Shigeki Otsuka ,  Yuichi Morita ,  Kazuo Okada ,  Hiroshi Yamada ,  Katsuhiko Kitagawa ,  Noboru Okubo ,  Shinzo Ishibe ,  Hiroyuki Shinogi

IPC分类号： H01L21/00

CPC分类号： H01L23/3128 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/49816 ,  H01L24/10 ,  H01L24/13 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/3511 ,  H01L2924/00

摘要： A packaged semiconductor device is manufactured by a simplified manufacturing process, and is reduced in cost, in thickness and in size. A device component and a pad electrode connected with the device component are formed on a semiconductor substrate. A supporter is bonded to a top surface of the semiconductor substrate through an adhesive layer. Then, there is formed a protection layer that has an opening at a location corresponding to the pad electrode and covers a side surface and a back surface of the semiconductor substrate. A conductive terminal is formed on the pad electrode at the location corresponding to the opening formed in the protection layer. No wiring layer or conductive terminal is formed on the back surface of the semiconductor substrate. A conductive terminal is formed on a periphery of the supporter outside of and next to the side surface of the semiconductor substrate.

摘要翻译： 封装的半导体器件通过简化的制造工艺制造，并且在成本，厚度和尺寸方面都降低了。 在半导体衬底上形成与器件部件连接的器件部件和焊盘电极。 支撑体通过粘合剂层结合到半导体衬底的顶表面。 然后，形成保护层，该保护层在与焊盘电极对应的位置处具有开口，并且覆盖半导体衬底的侧表面和后表面。 在与保护层中形成的开口相对应的位置处，在焊盘电极上形成导电端子。 在半导体基板的背面没有形成布线层或导电端子。 导电端子形成在半导体衬底的侧表面之外和旁边的支撑体的周边上。

公开(公告)号：US07986021B2

公开(公告)日：2011-07-26

申请号：US11639410

申请日：2006-12-15

申请人： Kazuo Okada ,  Katsuhiko Kitagawa ,  Takashi Noma ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Shinzo Ishibe ,  Yuichi Morita ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

发明人： Kazuo Okada ,  Katsuhiko Kitagawa ,  Takashi Noma ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Shinzo Ishibe ,  Yuichi Morita ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

IPC分类号： H01L31/0232

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L27/14625 ,  H01L31/0203 ,  H01L31/02327 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/014

摘要： The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.

摘要翻译： 本发明提供一种半导体器件，其解决了在输出图像上形成在半导体衬底的背面上的布线的图案的反射的问题。 在光接收元件和布线层之间形成反射层，其将红外线反射到光接收元件而不将其传输到布线层，红外线通过半导体从光透明基板进入布线层 基质。 反射层至少在光接收元件下方的区域中均匀地或仅在光接收元件下形成。 或者，可以形成具有吸收入射红外线以防止透射的功能的抗反射层，而不是反射层。

公开(公告)号：US07633133B2

公开(公告)日：2009-12-15

申请号：US11639411

申请日：2006-12-15

申请人： Takashi Noma ,  Kazuo Okada ,  Shinzo Ishibe ,  Katsuhiko Kitagawa ,  Yuichi Morita ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

发明人： Takashi Noma ,  Kazuo Okada ,  Shinzo Ishibe ,  Katsuhiko Kitagawa ,  Yuichi Morita ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

IPC分类号： H01L31/0203 ,  H01L31/0216 ,  H01L31/0224

CPC分类号： H01L27/14618 ,  H01L27/14636 ,  H01L31/0203 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/10 ,  H01L2924/00014

摘要： This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.

摘要翻译： 本发明提供一种半导体器件，其解决了形成在半导体衬底的背面上的布线的图案在输出图像上反射的问题。 在半导体衬底的前表面上形成有光接收元件（例如CCD，红外线传感器，CMOS传感器或照明传感器），并且多个球形导电端子设置在 半导体衬底。 每个导电端子通过布线层电连接到半导体衬底的前表面上的焊盘电极。 布线层和导电端子形成在除了在垂直方向上与光接收元件重叠的区域之外的半导体基板的背面上，并且不布置在与光接收元件重叠的区域中。

公开(公告)号：US20070145420A1

公开(公告)日：2007-06-28

申请号：US11639410

申请日：2006-12-15

申请人： Kazuo Okada ,  Katsuhiko Kitagawa ,  Takashi Noma ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Shinzo Ishibe ,  Yuichi Morita ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

发明人： Kazuo Okada ,  Katsuhiko Kitagawa ,  Takashi Noma ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Shinzo Ishibe ,  Yuichi Morita ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

IPC分类号： H01L27/148

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L27/14625 ,  H01L31/0203 ,  H01L31/02327 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/014

摘要： The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.

摘要翻译： 本发明提供一种半导体器件，其解决了在输出图像上形成在半导体衬底的背面上的布线的图案的反射的问题。 在光接收元件和布线层之间形成反射层，其将红外线反射到光接收元件而不将其传输到布线层，红外线通过半导体从光透明基板进入布线层 基质。 反射层至少在光接收元件下方的区域中均匀地或仅在光接收元件下形成。 或者，可以形成具有吸收入射红外线以防止透射的功能的抗反射层，而不是反射层。

公开(公告)号：US08102039B2

公开(公告)日：2012-01-24

申请号：US12376917

申请日：2007-08-02

申请人： Takashi Noma ,  Yuichi Morita ,  Hiroshi Yamada ,  Kazuo Okada ,  Katsuhiko Kitagawa ,  Noboru Okubo ,  Shinzo Ishibe ,  Hiroyuki Shinogi

发明人： Takashi Noma ,  Yuichi Morita ,  Hiroshi Yamada ,  Kazuo Okada ,  Katsuhiko Kitagawa ,  Noboru Okubo ,  Shinzo Ishibe ,  Hiroyuki Shinogi

IPC分类号： H01L23/02

CPC分类号： H01L25/105 ,  B81B7/007 ,  B81C1/00238 ,  H01L23/13 ,  H01L23/481 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/16145 ,  H01L2225/0652 ,  H01L2225/06555 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/3511 ,  H01L2924/00

摘要： This invention is directed to offer a package type semiconductor device that can realize a smaller size device and its manufacturing method as well as a small stacked layer type semiconductor device and its manufacturing method. A device component 1 and a pad electrode 4 electrically connected with the device component 1 are formed on a semiconductor substrate 2. A supporting member 7 is bonded to a surface of the semiconductor substrate 2 through an adhesive layer 6. There is formed a through-hole 15 in the supporting member 7 penetrating from its top surface to a back surface. Electrical connection with another device is made possible through the through-hole 15. A depressed portion 12 is formed in a partial region of the top surface of the supporting member 7. Therefore, all or a portion of another device or a component can be disposed utilizing a space in the depressed portion 12. When a stacked layer type semiconductor device is formed, stacking is made by fitting a portion of a semiconductor device 50 in an upper layer to an inside of the depressed portion 12.

摘要翻译： 本发明旨在提供一种能够实现较小尺寸的器件及其制造方法的封装型半导体器件以及小型堆叠层型半导体器件及其制造方法。 在半导体基板2上形成与器件部件1电连接的器件部件1和焊盘电极4.支撑部件7通过粘接层6与半导体基板2的表面接合。 支撑构件7中的孔15从其顶表面穿透到后表面。 通过通孔15可实现与另一装置的电连接。凹部12形成在支撑构件7的上表面的部分区域中。因此，可以设置其他装置或部件的全部或一部分 利用凹陷部分12中的空间。当形成层叠型半导体器件时，通过将上层的半导体器件50的一部分安装到凹陷部分12的内部来进行堆叠。

公开(公告)号：US20100164086A1

公开(公告)日：2010-07-01

申请号：US12376917

申请日：2007-08-02

申请人： Takashi Noma ,  Yuichi Morita ,  Hiroshi Yamada ,  Kazuo Okada ,  Katsuhiko Kitagawa ,  Noboru Okubo ,  Shinzo Ishibe ,  Hiroyuki Shinogi

发明人： Takashi Noma ,  Yuichi Morita ,  Hiroshi Yamada ,  Kazuo Okada ,  Katsuhiko Kitagawa ,  Noboru Okubo ,  Shinzo Ishibe ,  Hiroyuki Shinogi

IPC分类号： H01L25/065 ,  H01L23/488 ,  H01L21/60 ,  H01L21/77 ,  H01L23/52

CPC分类号： H01L25/105 ,  B81B7/007 ,  B81C1/00238 ,  H01L23/13 ,  H01L23/481 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/16145 ,  H01L2225/0652 ,  H01L2225/06555 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/3511 ,  H01L2924/00

摘要： This invention is directed to offer a package type semiconductor device that can realize a smaller size device and its manufacturing method as well as a small stacked layer type semiconductor device and its manufacturing method. A device component 1 and a pad electrode 4 electrically connected with the device component 1 are formed on a semiconductor substrate 2. A supporting member 7 is bonded to a surface of the semiconductor substrate 2 through an adhesive layer 6. There is formed a through-hole 15 in the supporting member 7 penetrating from its top surface to a back surface. Electrical connection with another device is made possible through the through-hole 15. A depressed portion 12 is formed in a partial region of the top surface of the supporting member 7. Therefore, all or a portion of another device or a component can be disposed utilizing a space in the depressed portion 12. When a stacked layer type semiconductor device is formed, stacking is made by fitting a portion of a semiconductor device 50 in an upper layer to an inside of the depressed portion 12.

摘要翻译： 本发明旨在提供一种能够实现较小尺寸的器件及其制造方法的封装型半导体器件以及小型堆叠层型半导体器件及其制造方法。 在半导体基板2上形成与器件部件1电连接的器件部件1和焊盘电极4.支撑部件7通过粘接层6与半导体基板2的表面接合。 支撑构件7中的孔15从其顶表面穿透到后表面。 通过通孔15可实现与另一装置的电连接。凹部12形成在支撑构件7的上表面的部分区域中。因此，可以设置其他装置或部件的全部或一部分 利用凹陷部分12中的空间。当形成层叠型半导体器件时，通过将上层的半导体器件50的一部分安装到凹陷部分12的内部来进行堆叠。