公开(公告)号：US11834327B2

公开(公告)日：2023-12-05

申请号：US16585242

申请日：2019-09-27

Applicant: SOFANT TECHNOLOGIES LTD.

Inventor： Nakul Haridas ,  Victor Steel

IPC: B81B7/00 ,  H01H59/00 ,  H01Q1/50 ,  H01P1/18 ,  H01P3/08 ,  H01P11/00

CPC classification number: B81B7/0006 ,  H01H59/0009 ,  H01P1/18 ,  H01P3/08 ,  H01P11/00 ,  H01Q1/50 ,  B81B2201/014 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0109 ,  B81B2203/019 ,  B81B2203/0181 ,  B81B2203/0307 ,  H01H2239/006 ,  H01H2239/018

Abstract: A microelectromechanical systems (MEMS) device comprising: a substrate; a signal conductor supported on the substrate; ground conductors supported on the substrate on either side of the signal conductor; and a MEMS bridge at least one end of which is mechanically connected to the substrate by way of at least one anchor, the MEMS bridge comprising an electrically conductive switching portion, the electrically conductive switching portion comprising a switching signal conductor region and a switching ground conductor region, the switching signal conductor region being provided over the signal conductor and the switching ground conductor region being provided over a said ground conductor, the electrically conductive switching region being movable relative to the said signal and ground conductors respectively to thereby change the inductances between the switching signal conductor region and the signal conductor and between the switching ground conductor region and the respective ground conductor, wherein there is no continuous electrically conductive path extending from the switching conductor region to the at least one anchor. Capacative and ohmic switches, a varactor, a phase shifter, a tuneable power splitter/combiner, tuneable attenuator, SPDT switch and antenna apparatus comprising said devices.

公开(公告)号：US09755041B2

公开(公告)日：2017-09-05

申请号：US14701502

申请日：2015-04-30

Applicant: Purdue Research Foundation

Inventor： Muhammad Ashraful Alam ,  Muhammad Masuduzzaman ,  Ankit Jain

IPC: G01L9/00 ,  H01L21/00 ,  H01L29/51 ,  H01L29/78 ,  H01L27/11502 ,  H01L27/11585 ,  B81B7/02 ,  H01G4/38 ,  H01L27/08 ,  H01G5/16 ,  H01G5/40 ,  H01G7/06 ,  H01L49/02

CPC classification number: H01L29/515 ,  B81B7/02 ,  B81B2201/014 ,  B81B2201/016 ,  B81B2201/07 ,  H01G4/38 ,  H01G5/16 ,  H01G5/40 ,  H01G7/06 ,  H01L27/0805 ,  H01L27/11502 ,  H01L27/11585 ,  H01L29/516 ,  H01L29/7842

Abstract: An electrical circuit comprising at least two negative capacitance insulators connected in series, one of the two negative capacitance insulators is biased to generate a negative capacitance. One of the negative capacitance insulators may include an air-gap which is part of a nanoelectromechnical system (NEMS) device and the second negative capacitance insulator includes a ferroelectric material. Both of the negative capacitance insulators may be located between the channel and gate of a field effect transistor. The NEMS device may include a movable electrode, a dielectric and a fixed electrode and arranged so that the movable electrode is attached to at least two points and spaced apart from the dielectric and fixed electrode, and the ferroelectric capacitor is electrically connected to either of the electrodes.

公开(公告)号：US20170121172A1

公开(公告)日：2017-05-04

申请号：US15405911

申请日：2017-01-13

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Jia Jie Xia ,  Nagarajan Ranganathan ,  Rakesh Kumar ,  Aveek Nath Chatterjee

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81B2201/016 ,  B81B2201/0271 ,  B81B2207/015 ,  B81B2207/07 ,  B81C1/00246 ,  B81C1/00253 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2201/053 ,  B81C2203/0735 ,  B81C2203/0771 ,  B81C2203/0792

Abstract: Integrated MEMS-CMOS devices and integrated circuits with MEMS devices and CMOS devices are provided. An exemplary integrated MEMS-CMOS device is vertically integrated and includes a substrate having a first side and a second side opposite the first side. Further, the exemplary vertically integrated MEMS-CMOS device includes a CMOS device located in and/or over the first side of the substrate. Also, the exemplary vertically integrated MEMS-CMOS device includes a MEMS device located in and/or under the second side of the substrate.

公开(公告)号：US09634231B2

公开(公告)日：2017-04-25

申请号：US14208012

申请日：2014-03-13

Applicant: FUJITSU LIMITED

Inventor： Osamu Toyoda ,  Takeaki Shimanouchi

IPC: H01H57/00 ,  H01L41/09 ,  B81C1/00

CPC classification number: H01L41/094 ,  B81B2201/016 ,  B81C1/00976 ,  H01H57/00 ,  H01H2057/006

Abstract: A MEMS switch has fixed support, a plate-shaped flexible beam having at least one end immovably supported by the fixed support and having an extending movable surface, a movable electric contact disposed on the movable surface of the flexible beam, a fixed electric contact facing the movable electric contact and disposed at a fixed position relative to the fixed support, first piezoelectric driver disposed above the movable surface of the flexible beam, extending from a portion above the fixed support towards the movable electric contact, and capable of displacing the movable electric contact towards the fixed electric contact by voltage driving, and second piezoelectric driver disposed at least on the movable surface of the flexible beam and capable of so driving a movable part of the flexible beam by voltage driving that the movable electric contact is separated from the fixed electric contact.

公开(公告)号：US09601280B2

公开(公告)日：2017-03-21

申请号：US14547426

申请日：2014-11-19

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Mark Bachman ,  Guann-Pyng Li ,  Yang Zhang ,  Minfeng Wang

IPC: H01H1/00 ,  B81B3/00 ,  H01H50/00

CPC classification number: H01H50/32 ,  B81B3/0054 ,  B81B2201/016 ,  H01H1/0036 ,  H01H50/005 ,  H01H50/44 ,  H01H50/58 ,  H01H2001/0042

Abstract: Micro-electromagnetically actuated latched miniature relay switches formed from laminate layers comprising a spring and magnet, electromagnetic coils, magnetic latching material, and transmission line with contacts. Preferably the miniature relay switches transmit up to about 50 W of DC or AC line power, and carry up to about 10 A of load current, with an overall volume of less than about 100 mm3. In addition to switching large power, the device preferably requires less than 3 V to actuate, and has a latching feature that retains the switch state after actuation without the need for external applied voltage or current.

公开(公告)号：US09573801B2

公开(公告)日：2017-02-21

申请号：US15044016

申请日：2016-02-15

Applicant: Texas Instruments Incorporated

Inventor： Arun Gupta ,  William C. McDonald ,  Adam Fruehling ,  Ivan Kmecko ,  Lance Barron ,  Divyanshu Agrawal

IPC: H01L27/20 ,  H01L29/84 ,  B81B7/00 ,  B81C1/00 ,  B81B3/00 ,  B81B7/02

CPC classification number: H01G5/16 ,  B81B3/0008 ,  B81B3/001 ,  B81B3/0013 ,  B81B7/0064 ,  B81B7/008 ,  B81B7/02 ,  B81B2201/016 ,  B81B2201/0221 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0181 ,  B81B2203/053 ,  B81B2203/058 ,  B81B2203/06 ,  B81B2207/012 ,  B81B2207/096 ,  B81C1/00158 ,  H01G5/011 ,  H01G5/40

Abstract: A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

Abstract translation: 一种MEM致动器装置和形成方法包括致动器元件的阵列。 每个致动器元件具有可移动的顶板和底板。 顶板包括用于中心膜构件运动的中心膜构件和悬臂弹簧。 底板由在中央膜构件下方延伸的两个RF信号线组成。 MEM静电致动器装置包括CMOS晶片，MEM晶片和球接合组件。 互连由球接合到通过MEMS晶片延伸的相关的通硅通孔（TSV）。 RF信号路径包括通过TSV电连接到水平进给杆并且从第一水平进给杆垂直地连接到阵列的每一列中的球形接合。 金属结合环在CMOS晶片和MEMS晶片之间延伸。 射频接地回路从覆盖阵列的接地屏蔽到金属接合环，TSV和球接合完成。

公开(公告)号：US09263973B2

公开(公告)日：2016-02-16

申请号：US14691962

申请日：2015-04-21

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Arun Kumar Gupta ,  William Craig McDonald

IPC: H01H57/00 ,  H02N2/12 ,  B81B3/00 ,  B81B7/02

CPC classification number: H02N2/12 ,  B81B3/0008 ,  B81B3/001 ,  B81B3/0013 ,  B81B7/02 ,  B81B2201/016 ,  B81B2201/0221 ,  B81B2203/0109 ,  B81B2203/0181 ,  B81B2203/053 ,  B81B2203/058 ,  B81B2203/06

Abstract: A MEMS electrostatic actuator includes a bottom plate affixed to a substrate and a top plate suspended above the bottom plate. The top plate has a parallel plate center section and two rotating members electrically connected to the center section. Each rotating member is attached centrally of the rotating member for rotation about an axis of rotation to a set of anchor posts. The attachment includes at least one pair of torsional springs attached along each axis, each spring comprising a rectangular metal square that twists as the rotational members rotate. Electrostatic pull-down electrodes are underneath each rotational member.

公开(公告)号：US20150294823A1

公开(公告)日：2015-10-15

申请号：US14547426

申请日：2014-11-19

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Mark Bachman ,  Guann-Pyng Li ,  Yang Zhang ,  Minfeng Wang

IPC: H01H50/32 ,  H01H50/58 ,  H01H51/22 ,  H01H50/44

CPC classification number: H01H50/32 ,  B81B3/0054 ,  B81B2201/016 ,  H01H1/0036 ,  H01H50/005 ,  H01H50/44 ,  H01H50/58 ,  H01H2001/0042

Abstract: Micro-electromagnetically actuated latched miniature relay switches formed from laminate layers comprising a spring and magnet, electromagnetic coils, magnetic latching material, and transmission line with contacts. Preferably the miniature relay switches transmit up to about 50 W of DC or AC line power, and carry up to about 10 A of load current, with an overall volume of less than about 100 mm3. In addition to switching large power, the device preferably requires less than 3 V to actuate, and has a latching feature that retains the switch state after actuation without the need for external applied voltage or current.

Abstract translation: 由包括弹簧和磁体的层压层形成的微电磁致动的小型继电器开关，电磁线圈，磁性闭锁材料和具有触点的传输线。 优选地，小型继电器开关传输高达约50W的DC或AC线路功率，并且承载大约10A的负载电流，总体积小于约100mm 3。 除了切换大功率之外，该装置优选地需要小于3V来致动，并且具有锁定特征，其在致动之后保持开关状态，而不需要外部施加的电压或电流。

公开(公告)号：US20150229241A1

公开(公告)日：2015-08-13

申请号：US14691962

申请日：2015-04-21

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Arun Kumar Gupta ,  William Craig McDonald

IPC: H02N2/12 ,  B81B7/02

CPC classification number: H02N2/12 ,  B81B3/0008 ,  B81B3/001 ,  B81B3/0013 ,  B81B7/02 ,  B81B2201/016 ,  B81B2201/0221 ,  B81B2203/0109 ,  B81B2203/0181 ,  B81B2203/053 ,  B81B2203/058 ,  B81B2203/06

Abstract: A MEMS electrostatic actuator includes a bottom plate affixed to a substrate and a top plate suspended above the bottom plate. The top plate has a parallel plate center section and two rotating members electrically connected to the center section. Each rotating member is attached centrally of the rotating member for rotation about an axis of rotation to a set of anchor posts. The attachment includes at least one pair of torsional springs attached along each axis, each spring comprising a rectangular metal square that twists as the rotational members rotate. Electrostatic pull-down electrodes are underneath each rotational member.

Abstract translation: MEMS静电致动器包括固定到基板的底板和悬挂在底板上方的顶板。 顶板具有平行板中心部分和两个电连接到中心部分的旋转部件。 每个旋转构件安装在旋转构件的中心，用于围绕旋转轴线旋转到一组锚柱。 附件包括沿着每个轴线附接的至少一对扭转弹簧，每个弹簧包括矩形金属正方形，随着旋转构件的旋转，该正方形扭曲。 静电下拉电极位于每个旋转构件的下方。

公开(公告)号：US08973250B2

公开(公告)日：2015-03-10

申请号：US13164323

申请日：2011-06-20

Applicant: Christopher V. Jahnes ,  Anthony K. Stamper

Inventor： Christopher V. Jahnes ,  Anthony K. Stamper

IPC: H04R31/00 ,  B81B3/00 ,  B81C1/00 ,  B81B7/00 ,  H01L41/113 ,  H01L41/09

CPC classification number: B81B3/001 ,  B81B3/0021 ,  B81B3/0059 ,  B81B3/0072 ,  B81B7/0006 ,  B81B7/008 ,  B81B2201/016 ,  B81B2203/0163 ,  B81C1/00015 ,  B81C1/0015 ,  B81C1/00476 ,  G06F17/5045 ,  H01L41/094 ,  H01L41/1134 ,  H01L41/1138 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49121

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming a wiring layer on a substrate comprising actuator electrodes and a contact electrode. The method further includes forming a MEMS beam above the wiring layer. The method further includes forming at least one spring attached to at least one end of the MEMS beam. The method further includes forming an array of mini-bumps between the wiring layer and the MEMS beam.

Abstract translation: 提供微机电系统（MEMS）结构，制造方法和设计结构。 形成MEMS结构的方法包括在包括致动器电极和接触电极的基板上形成布线层。 该方法还包括在布线层上方形成MEMS光束。 该方法还包括形成至少一个连接到MEMS梁的至少一端的弹簧。 该方法还包括在布线层和MEMS光束之间形成微小凸块的阵列。