公开(公告)号：US12112921B2

公开(公告)日：2024-10-08

申请号：US17277188

申请日：2019-07-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki Ikuta ,  Hirokazu Ueda ,  Yutaka Fujino

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32201 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32834 ,  H01J2237/334

Abstract: This plasma processing method comprises: arranging a substrate in a region away from a microwave plasma generation region in a chamber; setting the pressure in the chamber to 1 Torr or higher; introducing microwaves from a microwave plasma source in the chamber, generating microwave plasma by introducing a processing gas containing a reducing gas, and diffusing active species from the microwave plasma in the microwave plasma generation region to the substrate side; and applying high-frequency power to the substrate to generate cathode-coupled plasma near the substrate and attract ions near the substrate to the substrate.

公开(公告)号：US20240254626A1

公开(公告)日：2024-08-01

申请号：US18564641

申请日：2022-05-17

Applicant: Tokyo Electron Limited

Inventor： Hiroki YAMADA ,  Ryota IFUKU ,  Takashi MATSUMOTO ,  Nobutake KABUKI

IPC: C23C16/455 ,  C23C16/26 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/45538 ,  C23C16/26 ,  C23C16/45534 ,  C23C16/45544 ,  C23C16/511 ,  C23C16/52 ,  H01J37/3222 ,  H01J37/32449 ,  H01J37/32201 ,  H01J2237/332

Abstract: A film forming method of forming a graphene film includes a loading process of loading a substrate into a processing container, a first process of forming the graphene film on the substrate using plasma of a first processing gas that includes a carbon-containing gas, and a second process of forming a doped graphene film on at least one of the substrate and the graphene film using plasma of a second processing gas that includes a dopant gas.

公开(公告)号：US20240222085A1

公开(公告)日：2024-07-04

申请号：US18605902

申请日：2024-03-15

Applicant: Tokyo Electron Limited

Inventor： Koichiro NAKAMURA ,  Norihisa KIYOFUJI

IPC: H01J37/32

CPC classification number: H01J37/32311 ,  H01J37/32201 ,  H01J37/3222 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32174 ,  H01J37/32238 ,  H01J2237/327 ,  H01J2237/335

Abstract: A plasma processing method is implementable with a plasma processing apparatus. The plasma processing method includes applying a voltage to a lower electrode in a substrate support with a gas being supplied into a chamber in the plasma processing apparatus. The substrate support is located in the chamber. The plasma processing method further includes generating plasma by providing a radio-frequency wave after application of the voltage to the lower electrode is started. In the method, the applying of the voltage and the generating of the plasma are performed without an object on a substrate support surface of the substrate support.

公开(公告)号：US11961713B2

公开(公告)日：2024-04-16

申请号：US17055680

申请日：2019-05-22

Applicant: SAIREM SOCIETE POUR L'APPLICATION INDUSTRIELLE DE LA RECHERCHE EN ELECTRONIQUE ET MICRO ONDES

Inventor： Louis Latrasse ,  Thibault Gadeyne

IPC: H01P5/103 ,  H01J37/32 ,  H01P5/12

CPC classification number: H01J37/32229 ,  H01J37/32201 ,  H01J37/32311 ,  H01P5/103 ,  H01P5/12

Abstract: A microwave coupling/combining device for coupling and combining at least two microwave sources includes a waveguide provided with a sleeve extending longitudinally along a main axis and having two opposing ends having a first end provided with an element forming a short-circuit and a second open end. The device further includes at least one transverse bar extending inside the sleeve along a transverse axis orthogonal to the main axis; and at least two coaxial connectors provided for being connected respectively to microwave sources. Each coaxial connector is mounted externally on the sleeve and has a central conductive core connected to and extended by a conductive antenna extending in a direction orthogonal to the transverse axis and to the main axis inside the sleeve and ending by an end attached to a transverse bar.

公开(公告)号：US20240096655A1

公开(公告)日：2024-03-21

申请号：US18469687

申请日：2023-09-19

Applicant: Kokusai Electric Corporation

Inventor： Katsuhiko Yamamoto

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32201 ,  H01J37/32449 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/67276

Abstract: There is provided a technique that includes: a process chamber in which a substrate is processed; an electromagnetic wave generator configured to supply an electromagnetic wave into the process chamber; and a gas supplier through which a cooling gas is supplied to the substrate by adjusting a direction of supplying the cooling gas.

公开(公告)号：US11862432B2

公开(公告)日：2024-01-02

申请号：US17251449

申请日：2018-07-02

Applicant: MITSUBISHI ELECTRIC CORPORATION

Inventor： Hiroshi Suenobu ,  Shingo Yamaura ,  Tai Tanaka ,  Michio Takikawa

IPC: H05B6/70 ,  H05B6/80 ,  H01J37/32

CPC classification number: H01J37/32201 ,  H01J37/32311 ,  H01J37/32926 ,  H05B6/70 ,  H05B6/806

Abstract: A radiation element for radiating a microwave into the heating chamber at least one hollow dielectric member in which a gas is sealed, the hollow dielectric member having electrodes and a control unit having a plasma control unit for controlling the state of the hollow dielectric member and a current adjustment unit for adjusting a current to be applied to the electrodes of the hollow dielectric member under the control of the plasma control unit, the current adjustment unit being connected to the electrodes; and wherein the plasma control unit controls the state of the hollow dielectric member to put into one of states of: a plasma state in which the microwave is reflected by the gas; a plasma state in which the microwave is absorbed by the gas; and a gas state in which the microwave is allowed to be transmitted through the gas.

公开(公告)号：US11721532B2

公开(公告)日：2023-08-08

申请号：US17338510

申请日：2021-06-03

Applicant: Applied Materials, Inc.

Inventor： Philip Allan Kraus ,  Thai Cheng Chua ,  Mani Subramani

IPC: H01J37/32 ,  H01J27/18 ,  H05H1/46 ,  C23C16/511 ,  C23C14/35

CPC classification number: H01J37/32678 ,  C23C14/357 ,  C23C16/511 ,  H01J27/18 ,  H01J37/3222 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32238 ,  H01J37/32247 ,  H01J37/32266 ,  H01J37/32669 ,  H01J37/32935 ,  H05H1/46

Abstract: Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.

公开(公告)号：US11721526B2

公开(公告)日：2023-08-08

申请号：US16881458

申请日：2020-05-22

Applicant: MKS Instruments, Inc.

Inventor： Francesco Braghiroli

IPC: H01J37/32 ,  H05H1/46 ,  H03L7/099

CPC classification number: H01J37/32311 ,  H01J37/32201 ,  H01J37/32293 ,  H01J37/32798 ,  H03L7/099 ,  H05H1/46 ,  H01J2237/24564 ,  H01J2237/24592

Abstract: A method of generating power with a power generation system. Solid state generators generate a plurality of outputs. The outputs of the solid state generator modules are combined from a plurality of channels, in a combiner, using a phase optimization technique to generate an in phase combined output power.

公开(公告)号：US11646178B2

公开(公告)日：2023-05-09

申请号：US17241755

申请日：2021-04-27

Applicant: Tokyo Electron Limited

Inventor： Yuji Onuma ,  Hideo Kato

IPC: H01J37/32

CPC classification number: H01J37/32311 ,  H01J37/3299 ,  H01J37/32201 ,  H01J37/32266 ,  H01J37/32926 ,  H01J37/32972 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/32275 ,  H01J37/32935

Abstract: A controller of a plasma processing apparatus stores a frequency spectrum related to a first timing into a storage unit, controls a microwave generator to generate a microwave in correspondence to a setting frequency, setting power, and a setting bandwidth at a second timing, controls a demodulator to measure travelling wave power and reflected wave power of the microwave for each frequency, calculates the frequency spectrum related to the second timing on the basis of a measurement result from the demodulator, calculates a correction value for correcting a waveform of the travelling wave power for each frequency such that a difference for each frequency between the frequency spectrum related to the second timing and the frequency spectrum related to the first timing, stored in the storage unit, is small, and controls the microwave generator on the basis of the calculated correction value for each frequency.

公开(公告)号：US20190244789A1

公开(公告)日：2019-08-08

申请号：US16341932

申请日：2017-10-04

Applicant: Tokyo Electron Limited

Inventor： Kazushi KANEKO ,  Yuki KAWADA

IPC: H01J37/32 ,  H01L21/67 ,  G01R23/16

CPC classification number: H01J37/32201 ,  G01R23/16 ,  H01J37/32266 ,  H01J37/32311 ,  H01J2237/327 ,  H01L21/67017 ,  H05H1/46

Abstract: In a microwave output device of an embodiment, a part of a travelling wave propagating from a microwave generation unit to an output are output from a directional coupler. A first measurement unit generates an analog signal corresponding to a power of the part of the travelling wave by using diode detection, and converts the analog signal into a digital value. One or more correction coefficients associated with a set frequency, a set power, a set bandwidth of a microwave designated for the microwave output device are selected. The selected one or more correction coefficients are multiplied by the digital value, and thus a measured value is determined.