公开(公告)号：US12119428B2

公开(公告)日：2024-10-15

申请号：US17327208

申请日：2021-05-21

Applicant: Interface Technology (ChengDu) Co., Ltd. ,  INTERFACE OPTOELECTRONICS (SHENZHEN) CO., LTD. ,  GENERAL INTERFACE SOLUTION LIMITED

Inventor： Han-Lung Tsai ,  I-Chang Kuan ,  Ten-Hsing Jaw

IPC: G06F3/041 ,  H01L33/00 ,  H01L33/46 ,  H01L33/60

CPC classification number: H01L33/46 ,  G06F3/041 ,  H01L33/005 ,  H01L33/60 ,  G06F2203/04107 ,  H01L2933/0025 ,  H01L2933/0058

Abstract: A light-emitting assembly with improved illumination includes a first substrate, a light guide layer, light emitters, a touch sensor, a first reflective layer, and a second reflective layer. The first substrate defines a light-transmitting area. The light emitters are in the light guide layer. The light emitters emit light to illuminate the light-transmitting area. The touch sensor is opposite to the light-transmitting area. The first reflective layer is between the first substrate and the light guide layer and defines an opening aligned with the light-transmitting area. The second reflective layer is on a side of the light guide layer away from the first substrate. An electronic device using the light-emitting assembly and a method for making the light-emitting assembly are also disclosed.

公开(公告)号：US12113159B2

公开(公告)日：2024-10-08

申请号：US17419623

申请日：2019-12-31

Applicant: NANO-X

Inventor： Du Jin Park ,  Pil Kuk Jang

IPC: H01L33/62 ,  H01L33/00 ,  H01L33/24 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/62 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/0095 ,  H01L33/24 ,  H01L33/0008 ,  H01L33/08 ,  H01L33/32 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: Proposed is a dual emission LED chip that emits light to the upper and lower sides of a PN junction, wherein the duel emission LED chip uses the electroluminescent effect of the PN junction including a P layer and an N layer provided below the P layer, and characterized in that the dual emission LED chip emits light in the upward direction of the P layer and the downward direction of the N layer. The dual emission chip can be applied as a single chip to a field requiring dual emission, thereby enabling miniaturization of applied equipment, and increases power efficiency, thereby reducing manufacturing costs. In addition, as the dual emission LED chip can be manufactured through a batch process, a separate packaging process is not required.

公开(公告)号：US12113150B2

公开(公告)日：2024-10-08

申请号：US17518771

申请日：2021-11-04

Applicant: Korea University Research and Business Foundation

Inventor： In Hwan Lee ,  Gyu Cheol Kim

IPC: H01L33/24 ,  H01L23/00 ,  H01L27/15 ,  H01L33/38 ,  H01L33/62 ,  H01L25/065 ,  H01L25/075 ,  H01L33/00 ,  H01L33/44

CPC classification number: H01L33/24 ,  H01L24/95 ,  H01L27/15 ,  H01L33/38 ,  H01L33/62 ,  H01L25/0655 ,  H01L25/0753 ,  H01L33/0095 ,  H01L33/44 ,  H01L2224/95101 ,  H01L2224/95136 ,  H01L2224/95144 ,  H01L2924/10157 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: The present disclosure relates to the structure of a micro light-emitting device and an alignment substrate. The light-emitting device according to one embodiment includes an inclined side surface having a three-dimensional shape. The inclined side surface is formed to protrude from one surface of the micro light-emitting device, has magnetism, and includes two different electrodes formed in one direction. In this case, among the two electrodes, one electrode may be formed on a mesa portion, and the other electrode may be formed on the inclined side surface.

公开(公告)号：US12095010B2

公开(公告)日：2024-09-17

申请号：US18051182

申请日：2022-10-31

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Cheng Meng ,  Yuehua Jia ,  Jing Wang ,  Chun-Yi Wu ,  Ching-Shan Tao ,  Duxiang Wang

IPC: H01L33/40 ,  H01L33/00 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

CPC classification number: H01L33/405 ,  H01L33/0093 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/30 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, a first type semiconductor layer, an active layer, and a second type semiconductor layer; a transparent dielectric layer located on the second surface and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; and a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; wherein the transparent dielectric layer includes a first layer and a second layer; and wherein the first layer is thicker than the second layer, and a refractivity of the first layer is less than a refractivity of the second layer.

公开(公告)号：US12080696B2

公开(公告)日：2024-09-03

申请号：US18494109

申请日：2023-10-25

Applicant: Apple Inc.

Inventor： John A. Higginson ,  Andreas Bibl ,  Hsin-Hua Hu

IPC: H01L25/16 ,  H01L23/31 ,  H01L25/00 ,  H01L25/075 ,  H01L27/12 ,  H01L33/00 ,  H01L33/06 ,  H01L33/42 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62 ,  H01L21/56

CPC classification number: H01L25/167 ,  H01L23/3171 ,  H01L25/0753 ,  H01L25/50 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1262 ,  H01L33/005 ,  H01L33/06 ,  H01L33/42 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62 ,  H01L21/56 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material.

公开(公告)号：US20240290914A1

公开(公告)日：2024-08-29

申请号：US18654802

申请日：2024-05-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Su Mi MOON ,  Eun Ju KIM ,  Hyun Min CHO

IPC: H01L33/44 ,  H01L25/16 ,  H01L33/00 ,  H01L33/24

CPC classification number: H01L33/44 ,  H01L25/167 ,  H01L33/0062 ,  H01L33/0066 ,  H01L33/24 ,  H01L2933/0025

Abstract: A light emitting element includes an emission stacked pattern and an insulating film. The emission stack pattern includes a first conductive semiconductor layer, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer. The insulating film surrounds an outer surface of the emission stacked pattern and has a non-uniform thickness.

公开(公告)号：US20240282893A1

公开(公告)日：2024-08-22

申请号：US18651101

申请日：2024-04-30

Applicant: Tianma Advanced Display Technology Institute (Xiamen) Co., Ltd.

Inventor： Cao LIU ,  Xiaoxiang HE ,  Yingying CHEN

IPC: H01L33/56 ,  H01L25/075 ,  H01L25/16 ,  H01L33/44

CPC classification number: H01L33/56 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/44 ,  H01L2933/0025 ,  H01L2933/005

Abstract: Provided are a display panel and a display device. The display panel includes a display region, a substrate, an array layer, a light-emitting element, and an inorganic encapsulation layer. The light-emitting element is located on the side of the array layer facing away from the substrate. The array layer includes a groove and a driver circuit. The driver circuit is at least partially located in the display region. The inorganic encapsulation layer is located on the side of the light-emitting element facing away from the substrate and at least partially covers the groove. In a first direction, the minimum distance from the groove to an edge of the display panel is less than the minimum distance from the driver circuit to the edge of the display panel. The first direction is a direction in which the display region points to the edge of the display panel.

公开(公告)号：US20240274772A1

公开(公告)日：2024-08-15

申请号：US18626810

申请日：2024-04-04

Applicant: GLO TECHNOLOGIES LLC

Inventor： Saket CHADDA ,  Anusha POKHRIYAL ,  Zulal Tezcan OZEL

IPC: H01L33/62 ,  H01L27/15 ,  H01L33/00 ,  H01L33/46

CPC classification number: H01L33/62 ,  H01L27/156 ,  H01L33/005 ,  H01L33/46 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: A method includes transferring a first subset of the first LEDs from a first substrate to a first backplane to form first subpixels in pixel regions, transferring a first subset of the second LEDs to a second backplane and separating the first subset of the second LEDs from a second substrate to leave first vacancies on the second substrate, forming an additional electrically conductive material on a second subset of second LEDs located on the second substrate after transferring the first subset of the second LEDs to the second backplane, positioning the second substrate over the first backplane, such that the first subpixels are disposed in the first vacancies, and transferring the second subset of the second LEDs to a second subset of bonding structures on the first backplane to form second subpixels in the pixel regions, while a gap exists between the first subpixels and the second substrate.

公开(公告)号：US20240274753A1

公开(公告)日：2024-08-15

申请号：US18619924

申请日：2024-03-28

Applicant: OSRAM OLED GmbH

Inventor： Sebastian PICKEL ,  Johannes SARIC ,  Wolfgang SCHMID ,  Anna STROZECKA-ASSIG ,  Johannes BAUR

IPC: H01L33/38 ,  H01L33/30 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46

CPC classification number: H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/30 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: In one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

公开(公告)号：US12062734B2

公开(公告)日：2024-08-13

申请号：US17297874

申请日：2019-12-06

Applicant: LG ELECTRONICS INC.

Inventor： Yangwoo Byun ,  Hooyoung Song ,  Kyungho Lee

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/00 ,  H01L33/22 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L33/0093 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: Discussed is a display device and a method for manufacturing same, specifically, to a display device using semiconductor light-emitting elements of a few micrometers to tens of micrometers in size, and includes substrate having a wiring electrode, and a plurality of semiconductor light-emitting elements electrically connected to the wiring electrode, wherein each of the plurality of light-emitting elements includes of a buffer layer and an oxide layer formed on the buffer layer, and the oxide layer includes of an oxide of the buffer layer.