公开(公告)号：US08447714B2

公开(公告)日：2013-05-21

申请号：US12470451

申请日：2009-05-21

Applicant: Matthew Joseph Breitwisch ,  Roger W Cheek ,  Chung Hon Lam ,  Dharmendra Shantilal Modha ,  Bipin Rajendran

Inventor： Matthew Joseph Breitwisch ,  Roger W Cheek ,  Chung Hon Lam ,  Dharmendra Shantilal Modha ,  Bipin Rajendran

IPC: G06F15/18 ,  G06J1/00 ,  G06N3/00

CPC classification number: G06N3/049 ,  G06N3/0635 ,  G11C11/54 ,  G11C13/0004

Abstract: A system, method and computer program product for producing spike-dependent plasticity in an artificial synapse is disclosed. According to one embodiment, a method for producing spike-dependent plasticity in an artificial neuron comprises generating a pre-synaptic spiking event in a first neuron when a total integrated input to the first neuron exceeds a first predetermined threshold. A post-synaptic spiking event is generated in a second neuron when a total integrated input to the second neuron exceeds a second predetermined threshold. After the pre-synaptic spiking event, a first pulse is applied to a pre-synaptic node of a synapse having a phase change memory element. After the post-synaptic spiking event, a second varying pulse is applied to a post-synaptic node of the synapse, wherein current through the synapse is a function of the state of the second varying pulse at the time of the first pulse.

Abstract translation: 公开了一种用于在人造突触中产生尖峰依赖性可塑性的系统，方法和计算机程序产品。 根据一个实施方案，用于在人造神经元中产生尖峰依赖性可塑性的方法包括当对第一神经元的总积分输入超过第一预定阈值时，在第一神经元中产生突触前尖峰事件。 当到第二神经元的总积分输入超过第二预定阈值时，在第二神经元中产生突触后尖峰事件。 在突触前尖峰事件之前，将第一脉冲施加到具有相变存储元件的突触的突触前突触节点。 在突触后尖峰事件之后，将第二变化脉冲施加到突触的突触后结节，其中通过突触的电流是第一脉冲时的第二变化脉冲的状态的函数。

公开(公告)号：US20120317062A1

公开(公告)日：2012-12-13

申请号：US13587594

申请日：2012-08-16

Applicant: Bernard V. BREZZO ,  Leland Chang ,  Steven K. Esser ,  Daniel J. Friedman ,  Yong Liu ,  Dharmendra S. Modha ,  Robert K. Montoye ,  Bipin Rajendran ,  Jae-sun Seo ,  Jose A. Tierno

Inventor： Bernard V. BREZZO ,  Leland Chang ,  Steven K. Esser ,  Daniel J. Friedman ,  Yong Liu ,  Dharmendra S. Modha ,  Robert K. Montoye ,  Bipin Rajendran ,  Jae-sun Seo ,  Jose A. Tierno

IPC: G06N3/08

CPC classification number: G06N3/063 ,  G06N3/04 ,  G06N3/049 ,  G06N3/082

Abstract: A reconfigurable neural network circuit is provided. The reconfigurable neural network circuit comprises an electronic synapse array including multiple synapses interconnecting a plurality of digital electronic neurons. Each neuron comprises an integrator that integrates input spikes and generates a signal when the integrated inputs exceed a threshold. The circuit further comprises a control module for reconfiguring the synapse array. The control module comprises a global final state machine that controls timing for operation of the circuit, and a priority encoder that allows spiking neurons to sequentially access the synapse array.

Abstract translation: 提供可重构神经网络电路。 可重构神经网络电路包括电子突触阵列，其包括互连多个数字电子神经元的多个突触。 每个神经元包括积分器，其对输入尖峰进行积分，并且当集成输入超过阈值时产生信号。 电路还包括用于重新配置突触阵列的控制模块。 控制模块包括控制电路操作的定时的全局最终状态机，以及允许加标神经元依次访问突触阵列的优先编码器。

公开(公告)号：US20120310340A1

公开(公告)日：2012-12-06

申请号：US13238143

申请日：2011-09-21

Applicant: Wayne H. Knox ,  Thomas Smith ,  Dharmendra Jani ,  Li Ding

Inventor： Wayne H. Knox ,  Thomas Smith ,  Dharmendra Jani ,  Li Ding

IPC: A61F2/16 ,  B29D11/00

CPC classification number: G02B3/0087 ,  A61F2/1618 ,  A61F2/1627 ,  A61F9/00834 ,  A61L27/16 ,  A61L27/50 ,  A61L27/52 ,  A61L2400/18 ,  A61L2430/16 ,  G02B2003/0093 ,  G02C2202/12 ,  G02C2202/14 ,  C08L33/10

Abstract: A method for modifying the refractive index of an optical polymeric material. The method comprises continuously irradiating predetermined regions of an optical, polymeric material with femtosecond laser pulses to form a gradient index refractive structure within the material. An optical device includes an optical, polymeric lens material having an anterior surface and posterior surface and an optical axis intersecting the surfaces and at least one laser-modified, GRIN layer disposed between the anterior surface and the posterior surface and arranged along a first axis 45° to 90° to the optical axis, and further characterized by a variation in index of refraction across at least one of at least a portion of the adjacent segments and along each segment.

Abstract translation: 一种用于改变光学聚合物材料的折射率的方法。 该方法包括用飞秒激光脉冲连续照射光学聚合材料的预定区域，以在材料内形成梯度折射率折射结构。 光学装置包括具有前表面和后表面的光学聚合物透镜材料和与表面相交的光轴以及设置在前表面和后表面之间并且沿着第一轴线45布置的至少一个激光修饰的GRIN层 °至90°，并且进一步的特征在于，相邻段的至少一部分中的至少一个和沿着每个段的折射率的变化。

公开(公告)号：US20120284217A1

公开(公告)日：2012-11-08

申请号：US13548532

申请日：2012-07-13

Applicant: Matthew J. Breitwisch ,  Chung Hon Lam ,  Dharmendra S. Modha ,  Bipin Rajendran

Inventor： Matthew J. Breitwisch ,  Chung Hon Lam ,  Dharmendra S. Modha ,  Bipin Rajendran

IPC: G06N3/04

CPC classification number: G06N3/0635 ,  G11C11/54 ,  G11C13/0002 ,  H01L27/285

Abstract: A neuromorphic system includes a plurality of synapse blocks electrically connected to a plurality of neuron circuit blocks. The plurality of synapse blocks includes a plurality of neuromorphic circuits. Each neuromorphic circuit includes a field effect transistor in a diode configuration electrically connected to variable resistance material, where the variable resistance material provides a programmable resistance value. Each neuromorphic circuit also includes a first junction electrically connected to the variable resistance material and an output of one or more of the neuron circuit blocks, and a second junction electrically connected to the field effect transistor and an input of one or more of the neuron circuit blocks.

Abstract translation: 神经元系统包括电连接到多个神经元电路块的多个突触块。 多个突触块包括多个神经形态电路。 每个神经形态电路包括电连接到可变电阻材料的二极管配置中的场效应晶体管，其中可变电阻材料提供可编程电阻值。 每个神经形态电路还包括电连接到可变电阻材料的第一结和一个或多个神经元电路块的输出，以及电连接到场效应晶体管的第二结和一个或多个神经元电路的输入 块。

公开(公告)号：US20120109866A1

公开(公告)日：2012-05-03

申请号：US12916306

申请日：2010-10-29

Applicant: Dharmendra S. Modha

Inventor： Dharmendra S. Modha

IPC: G06N3/04

CPC classification number: G06N3/063

Abstract: Embodiments of the invention relate to producing spike-timing dependent plasticity using electronic neurons interconnected in a crossbar array network. The crossbar array network comprises a plurality of crossbar arrays. Each crossbar array comprises a plurality of axons and a plurality of dendrites such that the axons and dendrites are transverse to one another, and multiple synapse devices, wherein each synapse device is at a cross-point junction of the crossbar array coupled between a dendrite and an axon. The crossbar arrays are spatially in a staggered pattern providing a staggered crossbar layout of the synapse devices.

Abstract translation: 本发明的实施例涉及使用在交叉开关阵列网络中互连的电子神经元来产生尖峰时序相关的可塑性。 横杆阵列网络包括多个横杆阵列。 每个横杆阵列包括多个轴突和多个树突，使得轴突和树突彼此横向，以及多个突触装置，其中每个突触装置处于交叉杆阵列的交叉点连接处，所述横杆阵列耦合在枝晶和 一个轴突 横杆阵列在空间上是交错的图案，提供突触装置的交错横截面布局。

公开(公告)号：US20120084241A1

公开(公告)日：2012-04-05

申请号：US12895791

申请日：2010-09-30

Applicant: Daniel J. Friedman ,  Seongwon Kim ,  Chung H. Lam ,  Dharmendra S. Modha ,  Bipin Rajendran ,  Jose A. Tierno

Inventor： Daniel J. Friedman ,  Seongwon Kim ,  Chung H. Lam ,  Dharmendra S. Modha ,  Bipin Rajendran ,  Jose A. Tierno

IPC: G06N3/063

CPC classification number: G06N3/06 ,  G06N3/049 ,  G06N3/063 ,  G06N3/0635 ,  G06N3/08 ,  G11C11/54 ,  G11C13/0004

Abstract: Embodiments of the invention relate to a neuromorphic network for producing spike-timing dependent plasticity. The neuromorphic network includes a plurality of electronic neurons and an interconnect circuit coupled for interconnecting the plurality of electronic neurons. The interconnect circuit includes plural synaptic devices for interconnecting the electronic neurons via axon paths, dendrite paths and membrane paths. Each synaptic device includes a variable state resistor and a transistor device with a gate terminal, a source terminal and a drain terminal, wherein the drain terminal is connected in series with a first terminal of the variable state resistor. The source terminal of the transistor device is connected to an axon path, the gate terminal of the transistor device is connected to a membrane path and a second terminal of the variable state resistor is connected to a dendrite path, such that each synaptic device is coupled between a first axon path and a first dendrite path, and between a first membrane path and said first dendrite path.

Abstract translation: 本发明的实施例涉及一种用于产生尖峰时序相关可塑性的神经形态网络。 神经元网络包括多个电子神经元和耦合用于互连多个电子神经元的互连电路。 互连电路包括用于经由轴突路径，枝晶路径和膜路径互连电子神经元的多个突触装置。 每个突触装置包括可变状态电阻器和具有栅极端子，源极端子和漏极端子的晶体管器件，其中漏极端子与可变状态电阻器的第一端子串联连接。 晶体管器件的源极端子连接到轴突路径，晶体管器件的栅极端子连接到膜路径，并且可变状态电阻器的第二端子连接到树突路径，使得每个突触器件被耦合 在第一轴突路径和第一枝晶路径之间以及在第一膜路径和所述第一枝晶路径之间。

公开(公告)号：US08057495B2

公开(公告)日：2011-11-15

申请号：US11519366

申请日：2006-09-12

Applicant: Dharmendra Pal ,  Roy S. Collins ,  Andrew W. Conder ,  Kian Olsen ,  Thomas A. Osborne

Inventor： Dharmendra Pal ,  Roy S. Collins ,  Andrew W. Conder ,  Kian Olsen ,  Thomas A. Osborne

IPC: A61B17/08

CPC classification number: A61F2/88 ,  A61B17/12022 ,  A61B17/12118 ,  A61B17/12145 ,  A61B17/1215 ,  A61B2017/1205 ,  A61F2002/823

Abstract: A system and method for occluding an aneurysm formed in a dilatation area of a body vessel are disclosed. The system comprises a wire guide, a core wire, and an occlusion device. The wire guide comprises a proximal end and a distal end, and has a passageway that extends from the proximal end to the distal end. The core wire comprises a distal end and a proximal end, and is disposed through the passageway so that the proximal end of the core wire proximally extends beyond the proximal end of the wire guide. The occlusion device comprises a distal end and a proximal end, and has a deployed state and an undeployed state. The occlusion device has a pre-set spiraled coil shape when in the deployed state in the vessel. The occlusion device is disposed distally from the core wire in the passageway.

Abstract translation: 公开了一种用于闭塞在身体容器的扩张区域中形成的动脉瘤的系统和方法。 该系统包括导线器，芯线和闭塞装置。 线引导件包括近端和远端，并且具有从近端延伸到远端的通道。 芯线包括远端和近端，并且穿过通道设置，使得芯线的近端近端延伸超过线引导件的近端。 闭塞装置包括远端和近端，并且具有展开状态和未部署状态。 当在容器中处于展开状态时，遮挡装置具有预定的螺旋形线圈形状。 闭塞装置在通道中远离芯线设置。

公开(公告)号：US07978510B2

公开(公告)日：2011-07-12

申请号：US12395695

申请日：2009-03-01

Applicant: Dharmendra S. Modha ,  Stuart S. P. Parkin

Inventor： Dharmendra S. Modha ,  Stuart S. P. Parkin

IPC: G11C11/34

CPC classification number: G11C11/54 ,  G06N3/049 ,  G06N3/0635 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0007

Abstract: An active memory element is provided. A bipolar memory two-terminal element includes polarity-dependent switching. A probability of switching of the bi-polar memory element between a first state and a second state decays exponentially based on time delay and a difference between received signals at the two terminals and a switching threshold magnitude.

Abstract translation: 提供有源存储元件。 双极存储器双端元件包括极性依赖的开关。 双极存储元件在第一状态和第二状态之间切换的概率基于时间延迟和两个终端处的接收信号之间的差异以及切换阈值大小而衰减。

公开(公告)号：US07967875B2

公开(公告)日：2011-06-28

申请号：US12791221

申请日：2010-06-01

Applicant: Christopher Boczer ,  Frank M. Delnick ,  Rosauro Del Rosario ,  Minkoo Kang ,  Lucyna M. Pawlowska ,  Michael Pozin ,  Dharmendra Rana ,  Maya Stevanovic ,  John J. Weckesser

Inventor： Christopher Boczer ,  Frank M. Delnick ,  Rosauro Del Rosario ,  Minkoo Kang ,  Lucyna M. Pawlowska ,  Michael Pozin ,  Dharmendra Rana ,  Maya Stevanovic ,  John J. Weckesser

IPC: H01M4/13 ,  H01M4/62 ,  H01M10/0568 ,  H01M10/0569

CPC classification number: H01M10/0569 ,  H01M4/0404 ,  H01M4/0411 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/505 ,  H01M4/621 ,  H01M4/622 ,  H01M4/661 ,  H01M10/0525 ,  Y10T29/49108 ,  Y10T29/49115

Abstract: This disclosure relates to methods of making a cathode for a lithium batter. The methods include: (a) treating a cathode current collector with flame or corona; (b) coating a slurry containing iron disulfide, a first solvent, and a binder onto the cathode current collector obtained from step (a) to form a coated cathode current collector, in which the slurry contains about 73-75% by weight solids and the binder contains a polymer selected from the group consisting of linear di- and tri-block copolymers, linear tri-block copolymers cross-linked with melamine resin, ethylene-propylene copolymers, ethylene-propylene-diene terpolymers, tri-block fluorinated thermoplastics, hydrogenated nitrile rubbers, fluoro-ethylene-vinyl ether copolymers, thermoplastic polyurethanes, thermoplastic olefins, and polyvinylidene fluoride homopolymers; and (c) drying the coated cathode current collector obtained from step (b) to provide a cathode, in which the cathode contains no more than 0.5% by volume of the first solvent and is capable of being bent to 180°. This disclosure also relates to methods of making a lithium battery.

Abstract translation: 本公开涉及制备用于锂电池的阴极的方法。 方法包括：（a）用火焰或电晕处理阴极集电器; （b）将含有二硫化铁，第一溶剂和粘合剂的浆料涂布到从步骤（a）获得的阴极集流体上，以形成涂覆的阴极集电器，其中浆料含有约73-75重量％的固体， 粘合剂含有选自直链二嵌段和三嵌段共聚物，与三聚氰胺树脂交联的直链三嵌段共聚物，乙烯 - 丙烯共聚物，乙烯 - 丙烯 - 二烯三元共聚物，三嵌段氟化热塑性塑料， 氢化丁腈橡胶，氟乙烯 - 乙烯基醚共聚物，热塑性聚氨酯，热塑性烯烃和聚偏氟乙烯均聚物; 和（c）将由步骤（b）获得的涂覆的阴极集电体干燥以提供阴极，其中阴极含有不超过0.5体积％的第一溶剂并且能够弯曲至180°。 本公开还涉及制造锂电池的方法。

公开(公告)号：US20110143591A1

公开(公告)日：2011-06-16

申请号：US12636141

申请日：2009-12-11

Applicant: Wayne Samuel Davis ,  Robert Neil Whiteman, JR. ,  Dharmendra Saraswat

Inventor： Wayne Samuel Davis ,  Robert Neil Whiteman, JR. ,  Dharmendra Saraswat

IPC: H01R13/648

CPC classification number: H01R13/6587 ,  H01R12/724

Abstract: A contact module is provided for an electrical connector. The contact module includes a housing having a mating edge, a mounting edge, and a side. An electrical lead is held by the housing. The electrical lead extends from a mating contact to a mounting contact. The mating contact extends outwardly from the mating edge of the housing. The mounting contact extends outwardly from the mounting edge of the housing. An inner ground shield is mounted on the housing. The inner ground shield includes a housing side segment that extends over at least a portion of the side of the housing between the mating and mounting edges thereof. An outer ground shield is mounted on the housing. The outer ground shield extends over at least a portion of the housing side segment of the inner ground shield.

Abstract translation: 为电连接器提供接触模块。 接触模块包括具有配合边缘，安装边缘和侧面的壳体。 电气引线由外壳固定。 电引线从配合触头延伸到安装触点。 配合触头从壳体的配合边缘向外延伸。 安装触头从外壳的安装边缘向外延伸。 内部接地屏蔽安装在外壳上。 内部接地屏蔽包括壳体侧段，其在壳体的配合和安装边缘之间的至少一部分侧壁上延伸。 外部接地屏蔽安装在外壳上。 外部接地屏蔽层在内部接地屏蔽的外壳侧段的至少一部分上延伸。