公开(公告)号：US07622323B2

公开(公告)日：2009-11-24

申请号：US11196382

申请日：2005-08-04

Applicant: Chang Ju Kim ,  Eun Jeong Jeong ,  Sang Yoon Lee ,  Bon Won Koo ,  Eun Kyung Lee

Inventor： Chang Ju Kim ,  Eun Jeong Jeong ,  Sang Yoon Lee ,  Bon Won Koo ,  Eun Kyung Lee

IPC: H01L51/40

CPC classification number: H01L51/0541 ,  H01L51/0002 ,  H01L51/0036 ,  H01L51/0516 ,  H01L51/0545

Abstract: A method for fabricating an organic thin film transistor by application of an electric field. The method includes the steps of fabricating a common organic thin film transistor including a gate electrode, a gate insulating layer, an organic semiconductor layer and source/drain electrodes laminated on a substrate, and applying a direct current (DC) voltage to between the source and drain electrodes and applying an alternating current (AC) voltage to the gate electrode. The characteristics of an organic thin film transistor deteriorated after lamination of the respective layers can be recovered by the simple treatment. Therefore, the OTFT fabricated by the method has low threshold voltage, low driving voltage, high charge carrier mobility, and high Ion/Ioff ratio.

Abstract translation: 一种通过施加电场来制造有机薄膜晶体管的方法。 该方法包括以下步骤：制造包括栅电极，栅极绝缘层，有机半导体层和层压在衬底上的源极/漏极之间的公共有机薄膜晶体管，以及在源极之间施加直流（DC）电压 和漏电极，并向栅电极施加交流（AC）电压。 通过简单的处理可以回收各层的层叠后劣化的有机薄膜晶体管的特性。 因此，该方法制造的OTFT具有低阈值电压，低驱动电压，高电荷载流子迁移率和高离子/离子比率。

公开(公告)号：US20090228105A1

公开(公告)日：2009-09-10

申请号：US12159204

申请日：2006-10-31

Applicant: Young Sook Son ,  Jung Sun Lee ,  Eun Kyung Lee ,  Jin Yeon Lee

Inventor： Young Sook Son ,  Jung Sun Lee ,  Eun Kyung Lee ,  Jin Yeon Lee

IPC: A61F2/08

CPC classification number: A61K35/28 ,  A61K35/12 ,  A61K35/32 ,  A61L27/20 ,  A61L27/3804 ,  A61L27/3852 ,  A61L2430/06 ,  C12N5/0655 ,  C12N5/0668 ,  C12N2501/115 ,  C08L5/08

Abstract: The present invention relates to an artificial cartilage containing mesenchymal stem cell (MSC)-like dedifferentiated cells obtained by passage culturing costal chondrocytes, and a preparation process thereof.

Abstract translation: 本发明涉及通过培养肋软骨细胞获得的含有间充质干细胞（MSC）的去分化细胞的人造软骨及其制备方法。

公开(公告)号：US20090197416A1

公开(公告)日：2009-08-06

申请号：US12421662

申请日：2009-04-10

Applicant: Eun-kyung LEE ,  Byoung-Iyong CHOI

Inventor： Eun-kyung LEE ,  Byoung-Iyong CHOI

IPC: H01L21/306

CPC classification number: C30B29/06 ,  B82Y30/00 ,  C30B11/12 ,  C30B25/00 ,  C30B29/60 ,  Y10T428/2933

Abstract: Silicon nano wires having silicon nitride shells and a method of manufacturing the same are provided. Each silicon nano wire has a core portion formed of silicon, and a shell portion formed of silicon nitride surrounding the core portion. The method includes removing silicon oxide formed on the shell of the silicon nano wire and forming a silicon nitride shell.

Abstract translation: 提供了具有氮化硅壳的硅纳米线及其制造方法。 每个硅纳米线具有由硅形成的芯部分和由围绕芯部分的氮化硅形成的壳部分。 该方法包括去除形成在硅纳米线的外壳上并形成氮化硅壳的氧化硅。

公开(公告)号：US20090057653A1

公开(公告)日：2009-03-05

申请号：US12051513

申请日：2008-03-19

Applicant: Eun Kyung LEE ,  Byoung Lyong CHOI ,  Young KUK ,  Je Hyuk CHOI ,  Hun Huy JUNG

Inventor： Eun Kyung LEE ,  Byoung Lyong CHOI ,  Young KUK ,  Je Hyuk CHOI ,  Hun Huy JUNG

IPC: H01L29/06 ,  H01L21/311

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L31/035281 ,  H01L33/08 ,  H01L33/20 ,  Y10S977/70 ,  Y10S977/762 ,  Y10S977/84

Abstract: Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires.

Abstract translation: 提供了水平纳米线场地选择性生长的方法。 根据该方法，具有预定长度和直径的水平纳米线可以在平行于基板的方向上在所需位置选择性地生长，从而制造具有高集成度的装置。 还提供了通过包括纳米线的方法和纳米器件生长的纳米线。

公开(公告)号：US20080283828A1

公开(公告)日：2008-11-20

申请号：US12078952

申请日：2008-04-08

Applicant: Eun Kyung Lee ,  Bang Lin Lee ,  Kook Min Han ,  Sang Yoon Lee ,  Eun Jeong Jeong

Inventor： Eun Kyung Lee ,  Bang Lin Lee ,  Kook Min Han ,  Sang Yoon Lee ,  Eun Jeong Jeong

IPC: H01L51/05 ,  H01L51/40 ,  C08G75/00

CPC classification number: H01L51/0043 ,  C08G61/122 ,  C08G61/123 ,  C08G61/126 ,  H01B1/127 ,  H01L51/0036 ,  H01L51/0069 ,  H01L51/0076 ,  H01L51/0525 ,  H01L51/0545 ,  H01L51/0558 ,  Y02E10/549

Abstract: Example embodiments relate to an organic semiconductor polymer, in which fused thiophenes having liquid crystal properties and aromatic compounds having N-type semiconductor properties are alternately included in the main chain of the polymer, an organic active layer, an organic thin film transistor (OTFT), and an electronic device including the same, and methods of preparing the organic semiconductor polymer, and fabricating the organic active layer, the OTFT and the electronic device using the same. This organic semiconductor polymer has improved organic solvent solubility, processability, and thin film properties, and may impart increased charge mobility and decreased off-state leakage current when applied to the channel layer of the organic thin film transistor.

Abstract translation: 示例性实施方案涉及其中具有液晶性质的熔融噻吩和具有N型半导体性质的芳族化合物的有机半导体聚合物交替包含在聚合物的主链中，有机活性层，有机薄膜晶体管（OTFT） 以及包含该有机半导体聚合物的电子器件以及制备有机半导体聚合物的方法，以及制造有机活性层，OTFT和使用其的电子器件。 该有机半导体聚合物具有改善的有机溶剂溶解性，加工性和薄膜性质，并且当施加到有机薄膜晶体管的沟道层时，可以赋予增加的电荷迁移率和降低的截止状态漏电流。

公开(公告)号：US20080191201A1

公开(公告)日：2008-08-14

申请号：US12007307

申请日：2008-01-09

Applicant: Bang Lin Lee ,  Eun Kyung Lee ,  Joo Young Kim ,  Kook Min Han

Inventor： Bang Lin Lee ,  Eun Kyung Lee ,  Joo Young Kim ,  Kook Min Han

IPC: H01L51/05 ,  C07D417/02 ,  C08G75/32 ,  H01L31/04

CPC classification number: C07D417/04 ,  C07D417/14 ,  C07D421/14 ,  H01L51/0036 ,  H01L51/0512 ,  Y02E10/549

Abstract: Disclosed herein is a composition containing hetero arylene or arylene showing a p-type semiconductor property in addition to thiophene showing a p-type semiconductor property and thiazole rings showing a n-type semiconductor property at a polymer main chain, an organic semiconductor polymer containing the composition, an organic active layer containing the organic semiconductor polymer, an organic thin film transistor (OTFT) containing the organic active layer, an electronic device containing the OTFT, and a method of preparing the same. The composition of example embodiments, which is used in an organic semiconductor polymer and contains thiazole rings, may exhibit increased solubility to an organic solvent, coplanarity, processibility and an improved thin film property.

Abstract translation: 本文公开了含有异亚芳基或亚芳基的组合物，除了显示p型半导体性质的噻吩外还显示p型半导体性质，在聚合物主链上显示出n型半导体性质的噻唑环，含有 含有有机半导体聚合物的有机活性层，含有机活性层的有机薄膜晶体管（OTFT），含OTFT的电子器件及其制备方法。 用于有机半导体聚合物并含有噻唑环的示例性实施方案的组成可以表现出对有机溶剂的增加的溶解性，共面性，可加工性和改善的薄膜性质。

公开(公告)号：US20080150425A1

公开(公告)日：2008-06-26

申请号：US11753129

申请日：2007-05-24

Applicant: Kyung Sang CHO ,  Byoung Lyong CHOI ,  Jae Ho YOU ,  Eun Kyung LEE

Inventor： Kyung Sang CHO ,  Byoung Lyong CHOI ,  Jae Ho YOU ,  Eun Kyung LEE

IPC: H01J1/62 ,  H01J9/02

CPC classification number: H05B33/22

Abstract: Disclosed is an inorganic electroluminescent device. The inorganic electroluminescent device comprises a hole transport layer, a light-emitting layer, an inorganic electron transport layer and an electron injecting electrode sequentially formed on a hole injecting electrode wherein an insulating layer is formed between the electron injecting electrode and the inorganic electron transport layer.Further disclosed are a method for fabricating the electroluminescent device and an electronic device comprising the electroluminescent device.The inorganic electroluminescent device achieves uniform light emission from the entire light-emitting surface of the device, resulting in an improvement in the reliability and stability of the device. The inorganic electroluminescent device is suitable for use in the manufacture of electronic devices, including display devices, illuminators and backlight units.

Abstract translation: 公开了一种无机电致发光器件。 无机电致发光器件包括顺序形成在空穴注入电极上的空穴传输层，发光层，无机电子传输层和电子注入电极，其中在电子注入电极和无机电子传输层之间形成绝缘层 。 进一步公开的是制造电致发光器件的方法和包括电致发光器件的电子器件。 无机电致发光器件实现了来自器件的整个发光表面的均匀发光，从而提高了器件的可靠性和稳定性。 无机电致发光器件适用于电子设备的制造，包括显示设备，照明器和背光单元。

公开(公告)号：US20070194305A1

公开(公告)日：2007-08-23

申请号：US11606287

申请日：2006-11-30

Applicant: Joo Young Kim ,  Bon Won Koo ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Bang Lin Lee

Inventor： Joo Young Kim ,  Bon Won Koo ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Bang Lin Lee

IPC: H01L29/08

CPC classification number: H01L51/105 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0545

Abstract: Disclosed is an organic thin film transistor, including a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, and source/drain electrodes, in which a fluorine-based polymer thin film is provided between the source/drain electrodes and the organic semiconductor layer. A method of fabricating such an organic thin film transistor is also provided. According to example embodiments, the organic thin film transistor may have increased charge mobility and an Ion/Ioff ratio, due to decreased contact resistance between the source/drain electrodes and the organic semiconductor layer. Moreover, upon the formation of the organic semiconductor layer and insulating film, a wet process may be more easily applied, thus simplifying the fabrication process and decreasing the fabrication cost.

Abstract translation: 公开了一种有机薄膜晶体管，其包括基板，栅极电极，栅极绝缘层，有机半导体层和源极/漏极，其中在源极/漏极之间设置氟基聚合物薄膜和 有机半导体层。 还提供了制造这种有机薄膜晶体管的方法。 根据示例性实施例，由于源极/漏极之间的接触电阻降低，有机薄膜晶体管可能具有增加的电荷迁移率和I / 有机半导体层。 此外，在形成有机半导体层和绝缘膜时，可以更容易地应用湿法，从而简化制造工艺并降低制造成本。

公开(公告)号：US20070174780A1

公开(公告)日：2007-07-26

申请号：US11432817

申请日：2006-05-11

Applicant: Se-hyun Park ,  Chang-beom Shin ,  Eun-kyung Lee ,  Na-ri Choi

Inventor： Se-hyun Park ,  Chang-beom Shin ,  Eun-kyung Lee ,  Na-ri Choi

IPC: G06F17/00

CPC classification number: G06F3/0481

Abstract: Provided is a control method for a digital image processing apparatus having a movement mode in which a user moves a target object to a target position, the method including: displaying icons including an image icon of a target object and an icon indicating a target position; displaying an icon indicating a new target position in response to the detection of a target position change signal; displaying an image icon of a new target object in response to the detection of a target object change signal; and moving the target object of the image icon currently displayed to the target position indicated by the icon currently displayed in response to the detection of a movement signal.

Abstract translation: 提供一种具有移动模式的数字图像处理装置的控制方法，其中用户将目标对象移动到目标位置，该方法包括：显示包括目标对象的图像图标和指示目标位置的图标的图标; 响应于目标位置改变信号的检测显示指示新目标位置的图标; 响应于目标对象改变信号的检测显示新的目标对象的图像图标; 以及响应于检测到移动信号，将当前显示的图像图标的目标物体移动到由当前显示的图标指示的目标位置。

公开(公告)号：US20070114572A1

公开(公告)日：2007-05-24

申请号：US11600737

申请日：2006-11-17

Applicant: Kwang-Soo Seol ,  Woong-Chul Shin ,  Byung Kim ,  Eun-Kyung Lee ,  Kyung-Sang Cho

Inventor： Kwang-Soo Seol ,  Woong-Chul Shin ,  Byung Kim ,  Eun-Kyung Lee ,  Kyung-Sang Cho

IPC: H01L29/76

CPC classification number: H01L29/42332 ,  B82Y10/00 ,  H01L27/115 ,  H01L29/7881

Abstract: Provided is a gate structure including a multi-tunneling layer and method of fabricating the same. Also provided is a nanodot semiconductor memory device including such gate structure and method of fabricating the same. The gate structure may include a first insulation layer, a second insulation layer, a charge storage layer including nanodots and formed on the second insulation layer, a third insulation layer formed on the charge storage layer, and a gate electrode layer formed on the third insulation layer. There may also be a nanodot semiconductor memory device including a semiconductor substrate, in which a first impurity region and a second impurity region may be formed, and including the gate structure formed on the semiconductor substrate which contacts the first and second impurity regions. The second insulation layer may be formed on the first insulation layer and may include a material whose energy level may be lower than an energy level of the conduction band of the first insulation layer and higher an energy level of the valence band of the first insulation layer.

Abstract translation: 提供一种包括多隧道层的栅极结构及其制造方法。 还提供了包括这种栅极结构的纳米点半导体存储器件及其制造方法。 栅极结构可以包括第一绝缘层，第二绝缘层，包括纳米点并形成在第二绝缘层上的电荷存储层，形成在电荷存储层上的第三绝缘层，以及形成在第三绝缘层上的栅电极层 层。 还可以存在包括可以形成第一杂质区域和第二杂质区域的半导体衬底的纳米点半导体存储器件，并且包括形成在与第一和第二杂质区域接触的半导体衬底上的栅极结构。 第二绝缘层可以形成在第一绝缘层上，并且可以包括其能级可以低于第一绝缘层的导带的能级的材料，并且第一绝缘层的价带的能级越高 。