公开(公告)号：US20150270433A1

公开(公告)日：2015-09-24

申请号：US14732798

申请日：2015-06-08

Applicant: Genesis Photonics Inc.

Inventor： Yen-Lin Lai ,  Shen-Jie Wang

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/14 ,  H01L33/06

CPC classification number: H01L33/0025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/145 ,  H01L33/32 ,  H01L33/325

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AlxInyGa1-x-yN (0

Abstract translation: 揭示了包括其的氮化物半导体结构和半导体发光器件。 氮化物半导体结构包括由交替堆叠的多个阱层和势垒层形成的多量子阱结构。 一个阱层设置在每两个阻挡层之间。 势阱层由Al x In y Ga 1-x-y N（0

公开(公告)号：US20150263226A1

公开(公告)日：2015-09-17

申请号：US14727786

申请日：2015-06-01

Applicant: Genesis Photonics Inc.

Inventor： Chi-Feng Huang ,  Ching-Liang Lin ,  Shen-Jie Wang ,  Jyun-De Wu ,  Yu-Chu Li ,  Chun-Chieh Lee

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/02 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0

Abstract translation: 揭示了包括其的氮化物半导体结构和半导体发光器件。 氮化物半导体结构主要包括设置在发光层和p型载流子阻挡层之间的应力控制层。 p型载流子阻挡层由Al x Ga 1-x N（0

公开(公告)号：US20150252966A1

公开(公告)日：2015-09-10

申请号：US14715569

申请日：2015-05-18

Applicant: Genesis Photonics Inc.

Inventor： Sheng-Yuan Sun ,  Po-Jen Su

IPC: F21K99/00 ,  F21V9/16 ,  F21V13/02

CPC classification number: F21K9/64 ,  F21V9/30 ,  F21V13/02 ,  F21V19/0025 ,  F21Y2101/00 ,  F21Y2113/10 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/20 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting module including a substrate, a plurality of first light emitting diode (LED) chips and a plurality of second LED chips is provided. The substrate has a cross-shaped central region and a peripheral region surrounding the cross-shaped central region. The first LED chips are disposed on the substrate and at least located in the cross-shaped central region. The second LED chips are disposed on the substrate and at least located in the peripheral region. A size of each second LED chip is smaller than a size of each first LED chip. The number of the first LED chips located in the peripheral region is smaller than that in the cross-shaped central region. The number of the second LED chips located in the cross-shaped central region is smaller than that in the peripheral region.

Abstract translation: 提供了包括基板，多个第一发光二极管（LED）芯片和多个第二LED芯片的发光模块。 衬底具有十字形中心区域和围绕十字形中心区域的周边区域。 第一LED芯片设置在基板上并且至少位于十字形中心区域中。 第二LED芯片设置在基板上并且至少位于周边区域中。 每个第二LED芯片的尺寸小于每个第一LED芯片的尺寸。 位于周边区域的第一LED芯片的数量小于十字形中心区域中的数量。 位于十字形中心区域的第二LED芯片的数量小于周边区域中的第二LED芯片的数量。

公开(公告)号：US09123872B2

公开(公告)日：2015-09-01

申请号：US14510758

申请日：2014-10-09

Applicant: GENESIS PHOTONICS INC.

Inventor： Cheng-Yen Chen ,  Chun-Chieh Chin ,  Yun-Li Li

IPC: H01L33/52 ,  H01L33/50 ,  H01L33/00 ,  H01L33/48 ,  H01L33/54 ,  H01L33/56 ,  H01L31/0203 ,  H01L51/52 ,  F21K99/00

CPC classification number: H01L33/52 ,  F21K9/90 ,  H01L31/0203 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/48 ,  H01L33/483 ,  H01L33/50 ,  H01L33/501 ,  H01L33/505 ,  H01L33/54 ,  H01L33/56 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0058

Abstract: A method of manufacturing package component for light emitting diode (LED) is disclosed. At least one LED is disposed on a substrate inside a photocuring resin, wherein the LED is covered completely by the substrate and the photocuring resin. Power is provided to the LED to make the LED emit plural light beams such that a portion of the photocuring resin is cured by the light beams to obtain a male mold. A separation process is performed to separate the male mold and the other portion of the photocuring resin, the LED and the substrate. A rollover process is performed to manufacture the female mold by the male mold, wherein the female mold has at least one accommodation space with a shape identical to that of the male mold. A forming process is performed to form a package component with a shape identical to that of the male mold.

Abstract translation: 公开了一种制造发光二极管（LED）封装元件的方法。 至少一个LED设置在光固化树脂内的基板上，其中LED被基板和光固化树脂完全覆盖。 LED被提供给LED以使LED发射多个光束，使得光固化树脂的一部分被光束固化以获得阳模。 执行分离处理以分离阳模和光固化树脂，LED和基底的另一部分。 执行翻转过程以通过阳模制造阴模，其中阴模具有至少一个具有与阳模相同形状的容纳空间。 进行成形工序以形成具有与阳模相同形状的包装部件。

公开(公告)号：US09076912B2

公开(公告)日：2015-07-07

申请号：US13963109

申请日：2013-08-09

Applicant: GENESIS PHOTONICS INC.

Inventor： Yen-Lin Lai ,  Shen-Jie Wang

IPC: H01L29/06 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/0025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/145 ,  H01L33/32 ,  H01L33/325

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AlxInyGa1-x-yN (0

Abstract translation: 揭示了包括其的氮化物半导体结构和半导体发光器件。 氮化物半导体结构包括由交替堆叠的多个阱层和势垒层形成的多量子阱结构。 一个阱层设置在每两个阻挡层之间。 势阱层由Al x In y Ga 1-x-y N（0

公开(公告)号：US20150179896A1

公开(公告)日：2015-06-25

申请号：US14576218

申请日：2014-12-19

Applicant: Genesis Photonics Inc.

Inventor： Jing-En Huang ,  Po-Jen Su ,  Chih-Ling Wu ,  Shao-Ying Ting ,  Yi-Ru Huang ,  Yu-Yun Lo

IPC: H01L33/48 ,  H01L33/62

CPC classification number: H01L33/486 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2933/0066 ,  H01L2924/00014

Abstract: A package structure of light emitting diode includes a substrate and a light emitting diode die. The substrate has an upper surface and a lower surface opposite to each other. Two upper metal pads without mutual conduction are arranged on the upper surface. Two lower metal pads without mutual conduction are arranged on the lower surface. The light emitting diode die is disposed across the two upper metal pads. The light emitting diode die has a first electrode and a second electrode electrically connected to the two upper metal pads respectively. Wherein an orthographic projection area of one of the lower metal pads is greater than or equal to an orthographic projection area of the light emitting diode die, and the orthographic projection area of the light emitting diode die is totally located within the orthographic projection area of one of the lower metal pads.

Abstract translation: 发光二极管的封装结构包括衬底和发光二极管管芯。 基板具有彼此相对的上表面和下表面。 在上表面上设有两个不相互导电的上部金属焊盘。 在下表面上布置两个没有相互导电的下部金属焊盘。 发光二极管管芯设置在两个上部金属焊盘之间。 发光二极管管芯具有分别与两个上部金属焊盘电连接的第一电极和第二电极。 其中一个下部金属焊盘的正投影区域大于或等于发光二极管管芯的正投影区域，并且发光二极管管芯的正投影区域完全位于一个正交投影区域内 的下部金属垫。

公开(公告)号：US20150179888A1

公开(公告)日：2015-06-25

申请号：US14576207

申请日：2014-12-19

Applicant: Genesis Photonics Inc.

Inventor： Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/38 ,  H01L33/50

CPC classification number: H01L33/382 ,  H01L33/486 ,  H01L33/505

Abstract: A semiconductor light emitting structure includes an epitaxial structure, an N-type electrode pad, a P-type electrode pad and an insulation layer. The N-type electrode pad and the P-type electrode pad are disposed on the epitaxial structure apart, wherein the P-type electrode pad has a first upper surface. The insulation layer is disposed on the epitaxial structure and located between the N-type electrode pad and the P-type electrode pad, wherein the insulation layer has a second upper surface. The first upper surface of the P-type electrode pad and the second upper surface of the insulation layer are coplanar.

Abstract translation: 半导体发光结构包括外延结构，N型电极焊盘，P型电极焊盘和绝缘层。 N型电极焊盘和P型电极焊盘分开设置在外延结构上，其中P型电极焊盘具有第一上表面。 绝缘层设置在外延结构上并且位于N型电极焊盘和P型电极焊盘之间，其中绝缘层具有第二上表面。 P型电极焊盘的第一上表面和绝缘层的第二上表面是共面的。

公开(公告)号：US20150171291A1

公开(公告)日：2015-06-18

申请号：US14571312

申请日：2014-12-16

Applicant: Genesis Photonics Inc.

Inventor： Kuan-Chieh Huang ,  Yi-Fan Li

IPC: H01L33/56 ,  H01L33/48 ,  H01L33/54 ,  H01L33/50

CPC classification number: H01L33/56 ,  H01L33/486 ,  H01L33/501 ,  H01L33/505 ,  H01L33/507 ,  H01L33/54

Abstract: The disclosure provides a light emitting device, and a manufacturing method for a wavelength conversion layer. The light emitting device includes a support, a light emitting diode, and a material layer. The light emitting diode is arranged on the support and coupled to the support. A light emission peak wavelength of the light emitting diode is between 250 nm and 470 nm. The material layer is configured to cover the light emitting diode, wherein the material layer comprises a poly(vinylidene fluoride-hexafluoropropylene) copolymer.

Abstract translation: 本发明提供一种发光器件和用于波长转换层的制造方法。 发光器件包括支撑体，发光二极管和材料层。 发光二极管布置在支撑件上并联接到支撑件上。 发光二极管的发光峰值波长在250nm和470nm之间。 材料层被配置为覆盖发光二极管，其中材料层包括聚（偏二氟乙烯 - 六氟丙烯）共聚物。

公开(公告)号：US20150036129A1

公开(公告)日：2015-02-05

申请号：US14311364

申请日：2014-06-23

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Pin Chen ,  Yun-Li Li ,  Shou-Wen Hsu ,  Chih-Hung Tseng ,  Pei-Yi Huang ,  Ching-Cheng Sun ,  Tsung-Syun Huang ,  Yung-Tsung Lin ,  Ping-Tsung Tsai

IPC: G01N21/01 ,  G01N21/95

CPC classification number: G01N21/63 ,  G01N21/6489 ,  G01N21/8806 ,  G01N21/95 ,  G01N21/9501 ,  G01N2021/646 ,  G01N2201/061 ,  G01N2201/0636

Abstract: An inspection apparatus is capable for inspecting at least one light-emitting device. The inspection apparatus includes a working machine and an inspection light source. The inspection light source is disposed on the working machine and located above the light-emitting device. A dominant wavelength of the inspection light source is smaller than a dominant wavelength of the light-emitting device so as to excite the light-emitting device and get an optical property of the light-emitting device.

Abstract translation: 检查装置能够检查至少一个发光装置。 检查装置包括作业机和检查光源。 检查光源设置在工作机上并位于发光装置的上方。 检查光源的主波长小于发光装置的主波长，从而激发发光装置并获得发光装置的光学特性。

公开(公告)号：US20150036128A1

公开(公告)日：2015-02-05

申请号：US14311362

申请日：2014-06-23

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Pin Chen ,  Gwo-Jiun Sheu ,  Yun-Li Li

IPC: G01N21/01 ,  G01N21/95

CPC classification number: G01N21/6489 ,  G01N21/8806 ,  G01N21/95 ,  G01N21/9501 ,  G01N2021/646 ,  G01N2021/8819

Abstract: An inspection apparatus is capable of inspecting a light-emitting diode (LED). The inspection apparatus includes a reflecting cover, a base plate, a light-collecting unit and at least one inspection light source. An enclosed space is defined by the base plate and the reflecting cover having an opening. The LED is disposed on the base plate and located in the enclosed space. The light-collecting unit is disposed above the LED and in the enclosed space. A vertical distance from the light-collecting unit to the LED is H, a width of the opening of the reflecting cover is W, and H/W=0.05 to 10. The inspection light source is in the enclosed space. An inspection light emitted from the inspection light source is reflected by the reflecting cover and then emitted into the LED.A dominant wavelength of the inspection light source is smaller than that of the LED.

Abstract translation: 检查装置能够检查发光二极管（LED）。 检查装置包括反射盖，基板，聚光单元和至少一个检查光源。 封闭空间由基板和具有开口的反射盖限定。 LED设置在基板上并位于封闭空间中。 集光单元设置在LED的上方和封闭空间中。 从集光单元到LED的垂直距离为H，反射盖的开口宽度为W，H / W = 0.05〜10。检查光源位于封闭空间内。 从检查光源发出的检查光被反射罩反射，然后发射到LED中。 检测光源的主波长小于LED的主波长。