摘要:
A ferroelectric memory device has a high performance, includes no Pb, and can be directly mounted onto an Si substrate. The ferroelectric memory device includes a (001)-oriented BiFeO3 ferroelectric layer 5 with a tetragonal structure, which is formed on an electrode 4 made of a perovskite material formed on an Si oxide film. The electrode 4 with a perovskite structure is formed by an ion beam assist method.
摘要:
A piezoelectric film is provided having good piezoelectric properties. The piezoelectric film is represented by the following general formula: A1−bB1−aXaO3 wherein A contains Pb; B is at least one of Zr and Ti; X is at least one of V, Nb, Ta, Cr, Mo and W; a satisfies 0.05≦a≦0.3; and b satisfies 0.025≦b≦0.15.
摘要翻译:提供具有良好的压电性能的压电膜。 压电膜由以下通式表示:A 1-b B 1-a X a O 3 3 / >其中A含有Pb; B是Zr和Ti中的至少一种; X是V,Nb,Ta,Cr,Mo和W中的至少一种; a满足0.05 <= a <= 0.3; 并且b满足0.025≤b≤0.15。
摘要:
A ferroelectric film having a ferroelectric shown by a general formula (Pb1-dBid)(B1-aXa)O3, B including at least one of Zr and Ti, X including at least one of Nb and Ta, “a” being in a range of “0.05≦a≦0.4”, and “d” being in a range of “0
摘要翻译:具有铁电体的铁电体膜,其具有通式(Pb 1-a D b D d)(B 1-a X b) O 3,B包括Zr和Ti中的至少一种,X包括Nb和Ta中的至少一种,“a”在“0.05 <= a < 0.4“,”d“在”0
摘要:
A piezoelectric element in accordance with the present invention includes a base substrate, and a piezoelectric film formed above the base substrate, wherein the piezoelectric film is composed of a plurality of layers, at least two layers among the plurality of layers are composed of different relaxor materials, and the relaxor materials have a perovskite structure.
摘要:
An ink jet head is provided that can effectively suppress operational interferences among adjacent cavities, and is capable of ultra-high-density and high-speed printing. The ink jet head is equipped with a plurality of cavities each having a volume that is variable by a deformation operation of a piezoelectric element, wherein beam members are provided between inner walls that interpose the cavity.
摘要:
An intermediate film (15, 12, 53) is formed on a substrate (11, 52), a bottom electrode (13, 542) is formed on top of this intermediate film, a ferroelectric film (24) or piezoelectric film (543) is formed on top of this bottom electrode by an ion beam assist method, and a top electrode (25, 541) is formed on top of this ferroelectric film or piezoelectric film. The ferroelectric film or piezoelectric film is formed by PZT, BST or a relaxer material. As a result of the use of an ion beam assist method in the formation of any one of the intermediate film, bottom electrode, ferroelectric film or piezoelectric film, a piezoelectric device or ferroelectric device which has a piezoelectric film or ferroelectric film with an in-plane orientation can be manufactured with good efficiency.
摘要:
A liquid-ejecting head includes a pressure-generating chamber communicating with a nozzle opening, and a piezoelectric element. The piezoelectric layer contains a perovskite complex oxide containing Bi, La, Fe, and Mn and is ferroelectric.
摘要:
A liquid ejecting head includes a flow channel forming substrate having a pressure generation chamber communicating with a nozzle opening and arranged in parallel along a lateral direction. A piezoelectric element is provided on one surface of the flow channel forming substrate in correspondence to the pressure generation chamber, and has a first electrode, a piezoelectric layer provided on the first electrode and a second electrode provided on the piezoelectric layer. In a direction intersecting with the arrangement direction of the pressure generation chamber, in boundaries between an active section that is a substantial driving section and an inactive section that is not a substantial driving section of the piezoelectric layer of the first electrode, an opening group is provided including at least one opening in the active section and the inactive section.
摘要:
A piezoelectric element comprises a piezoelectric layer consisting a complex oxide having a perovskite structure containing bismuth and iron and electrodes provided to the piezoelectric layer. The complex oxide further contains a first dopant element that is at least one of magnesium and zinc and a second dopant element that is cerium.
摘要:
A liquid ejecting head including a pressure-generating chamber which communicates with a nozzle opening, and a piezoelectric element including a first electrode, a piezoelectric layer formed above the first electrode and having a perovskite structure represented by the general formula ABO3, and a second electrode formed above the piezoelectric layer, wherein the piezoelectric layer, lead, zirconium, and titanium are present at A sites of the perovskite structure, and lead, zirconium, and titanium are present at B sites of the perovskite structure.