公开(公告)号：US20030159769A1

公开(公告)日：2003-08-28

申请号：US10372453

申请日：2003-02-24

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Shinichi Ogimoto ,  Hirokazu Masuda

IPC: B32B031/00

CPC classification number: B32B38/1841 ,  B32B37/0046 ,  B32B37/12 ,  B32B2309/68 ,  B32B2309/70 ,  B32B2315/08 ,  B32B2457/20

Abstract: A substrate laminating apparatus has an upper stage for holding an upper glass substrate and a lower stage for holding a lower glass substrate, and which laminates together the upper glass substrate and the lower glass substrate in a condition that both of the substrates are positioned relative to each other. An image pickup device photographs position detecting marks on the upper and lower glass substrates, and a moving device changes a relative distance between the image pickup device and the upper/lower glass substrates. A data acquiring device acquires data about the relative distance between the upper/lower glass substrates and the image pickup device, and a control device controls the moving device based on data about the relative distance.

Abstract translation: 基板层叠装置具有用于保持上玻璃基板的上台和用于保持下玻璃基板的下台，并且在两个基板相对于两个基板定位的条件下将上玻璃基板和下玻璃基板层叠在一起 彼此。 图像拾取装置拍摄上玻璃基板和下玻璃基板上的位置检测标记，并且移动装置改变图像拾取装置和上/下玻璃基板之间的相对距离。 数据获取装置获取关于上下玻璃基板和图像拾取装置之间的相对距离的数据，并且控制装置基于关于相对距离的数据来控制移动装置。

公开(公告)号：US20020117267A1

公开(公告)日：2002-08-29

申请号：US10060219

申请日：2002-02-01

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Yoshitsugu Ogawa ,  Shinichi Ogimoto ,  Kunihiro Iwanaga

IPC: B31F005/00

CPC classification number: H01L21/67144 ,  H01L21/67092 ,  Y10T156/1744

Abstract: An electric component compression bonding machine for bonding a plurality of electric components arranged in a row to a substrate is described. The bonding machine comprises: a pressure application tool for applying a pressure to the electric components; a pressure receiving tool located opposed to the pressure application tool; a substrate supporting tool for supporting the substrate between the pressure application tool and the pressure receiving tool; a moving unit for moving the substrate supported by the substrate supporting tool relative to the pressure application tool; a control unit connected to the moving unit and taking control of the moving unit in order to adjust the position of the substrate supported by the substrate supporting tool relative to the pressure application tool for compression bonding the electric components to the substrate by the pressure application tool, wherein the control unit controls the moving unit to adjust the position of the substrate supported by the substrate supporting tool relative to the pressure application tool in order that any one of the ends of the pressure application tool is positioned apart from the row of the electric components or positioned between adjacent ones of the electric components.

Abstract translation: 描述了用于将布置成行的多个电气部件接合到基板的电气部件压接机。 粘合机包括：用于向电气部件施加压力的压力施加工具; 与所述压力施加工具相对设置的压力接收工具; 用于在压力施加工具和压力接收工具之间支撑衬底的衬底支撑工具; 移动单元，用于相对于所述压力施加工具移动由所述基板支撑工具支撑的所述基板; 连接到移动单元并且控制移动单元的控制单元，以便调节由基板支撑工具支撑的基板相对于压力施加工具的位置，用于通过压力施加工具将电气部件压接在基板上 ，其中所述控制单元控制所述移动单元以相对于所述压力施加工具调节由所述基板支撑工具支撑的所述基板的位置，以使所述压力施加工具的所述端部中的任一个与所述电力行 部件或位于相邻的电气部件之间。

公开(公告)号：US12165886B2

公开(公告)日：2024-12-10

申请号：US17460566

申请日：2021-08-30

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Kensuke Demura ,  Daisuke Matsushima ,  Masaya Kamiya

IPC: H01L21/67 ,  H01L21/687

Abstract: A substrate processing apparatus according to an embodiment of the present disclosure includes: a stage; a plurality of holders configured to hold a substrate; a liquid supply configured to supply a liquid to a surface of the substrate opposite to the stage; a cooler configured to supply a cooling gas to a space between the stage and the substrate; a mover configured to change a distance between the stage and the substrate; and a controller configured to control the cooler and the mover. The controller performs a cooling process that at least includes a supercooling process and a freezing process (solid-liquid phase), and a thawing process after the cooling process. In the cooling process, the controller controls the mover to set the distance to a first distance, and in the thawing process, the controller controls the mover to set the distance to a second distance longer than the first distance.

公开(公告)号：US20240234173A1

公开(公告)日：2024-07-11

申请号：US18612678

申请日：2024-03-21

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Hiroki KOYAMA

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/6708 ,  H01L21/67051 ,  H01L21/6715 ,  H01L21/68764

Abstract: According to one embodiment of the present disclosure, a substrate processing apparatus includes a rotor that holds and rotates a substrate, a first processing liquid supply unit that supplies a first processing liquid for etching to a processing target surface of the substrate that is being rotated by the rotor, thereby etching the processing target surface of the substrate, and a second processing liquid supply unit that supplies a second processing liquid for oxidation to the processing target surface of the substrate that is being rotated by the rotor, thereby forming an oxide film, consecutively to the etching by the supplying of the first processing liquid.

公开(公告)号：US11955367B2

公开(公告)日：2024-04-09

申请号：US17474403

申请日：2021-09-14

Applicant: Shibaura Mechatronics Corporation

Inventor： Shohei Tanabe ,  Koji Yoshimura ,  Ryo Matsuhashi

IPC: H01L21/687 ,  H01J37/32 ,  H01J37/34 ,  H01L21/02

CPC classification number: H01L21/68764 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32504 ,  H01J37/3435 ,  H01L21/02274 ,  H01J2237/332

Abstract: A film deposition apparatus reduces hillock formation while yielding uniform film thickness distribution. A film deposition apparatus of a present embodiment includes: a chamber; a rotary table that circulates and carries a workpiece W along a circumferential transfer path L; multiple targets that contain a film deposition material, and that are provided in positions at different radial distances from a center of rotation of the rotary table; a shield member that forms a film deposition chamber surrounding a region where the film deposition material scatters, and that has an opening on the side facing the circulated and carried workpiece; and a plasma generator that includes a sputter gas introduction unit for introducing a sputter gas into the film deposition chamber, and a power supply unit for applying power to the target, and that generates plasma in the sputter gas G1 in the film deposition chamber.

公开(公告)号：US20240071744A1

公开(公告)日：2024-02-29

申请号：US18239371

申请日：2023-08-29

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Yotaro FUKUOKA

IPC: H01L21/02 ,  H01L21/304 ,  H01L21/67

CPC classification number: H01L21/02052 ,  H01L21/304 ,  H01L21/67051 ,  H01L21/67253

Abstract: According to one embodiment of the present disclosure, a substrate cleaning apparatus includes a hydrophilization chamber connected to a polishing apparatus and that accommodates a substrate having a polished surface polished by the polishing apparatus; a support provided in the hydrophilization chamber; a liquid supply unit that supplies a cleaning liquid to the polished surface of the substrate to hydrophilize the polished surface; an imaging unit that captures an image of the polished surface supplied with the cleaning liquid; a determination unit that determines whether hydrophilization is achieved on a basis of the image; an adjustment unit that adjusts the supply of the cleaning solution by the liquid supply unit depending on a determination result obtained by the determination unit; and a cleaning chamber connected to the hydrophilization chamber and that cleans the polished surface hydrophilized by the cleaning liquid.

公开(公告)号：US20230326875A1

公开(公告)日：2023-10-12

申请号：US18328892

申请日：2023-06-05

Applicant: Shibaura Mechatronics Corporation

Inventor： Hisashi NISHIGAKI ,  Atsushi FUJITA ,  Shohei TANABE ,  Yoshinao KAMO ,  Shigeki MATSUNAKA

IPC: H01L23/552 ,  H01F10/26 ,  H01F10/30 ,  H01L23/00 ,  H05K9/00

CPC classification number: H01L23/552 ,  H01F10/265 ,  H01F10/30 ,  H01L24/32 ,  H05K9/0088 ,  H01L2924/3025 ,  H01L2224/32225

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

公开(公告)号：US11670522B2

公开(公告)日：2023-06-06

申请号：US15661480

申请日：2017-07-27

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke Hayashi ,  Kunihiro Miyazaki

IPC: H01L21/67

CPC classification number: H01L21/67075 ,  H01L21/6708 ,  H01L21/67017

Abstract: According to one embodiment, a processing liquid generator capable of improving the reliability of the concentration of generated processing liquid is provided.
A processing liquid generator that generates processing liquid having undergone concentration adjustment includes a processing liquid adjuster (11a), which adjusts the concentration of the processing liquid, a first processing liquid path P1, through which the processing liquid flows to the processing liquid adjuster (11a), a second processing liquid path P2, through which the processing liquid flows to the processing liquid adjuster 11a, a first concentration meter 201a, which measures the concentration of the processing liquid flowing through the first processing liquid path P1, the measured concentration being the concentration of a component involved in the concentration adjustment in the processing liquid adjuster (11a), a second concentration meter 201b, which measures the concentration of the processing liquid flowing through the second processing liquid path P2, the measured concentration being the concentration of a component that is involved in the concentration adjustment and should be measured with the first concentration meter 201a in terms of concentration, a first valve mechanism 120a/130a, which opens and closes the first processing liquid path P1, and a second valve mechanism 120b/130b, which opens and closes the second processing liquid path P2.

公开(公告)号：US11505866B2

公开(公告)日：2022-11-22

申请号：US16856650

申请日：2020-04-23

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Daisuke Ono ,  Akihiko Ito

IPC: C23C14/00 ,  C23C14/58 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34 ,  C23C16/50 ,  C23C16/452 ,  C23C16/40 ,  C23C16/24 ,  C23C16/458

Abstract: According to one embodiment, film formation apparatus includes: a carrying unit that includes a rotation table which circulates and carries a workpiece; a film formation process unit which includes a target formed of a silicon material, and a plasma producer that produces plasma of a sputter gas introduced between the target and the rotation table, and which forms a silicon film on the workpiece by sputtering; and a hydrogenation process unit which includes a process gas introducing unit that introduces a process gas containing a hydrogen gas, and a plasma producer that produces plasma of the process gas, and which performs hydrogenation on the silicon film formed on the workpiece. The carrying unit carries the workpiece so as to alternately pass through the film formation process unit and through the hydrogenation process unit.

公开(公告)号：US20220319820A1

公开(公告)日：2022-10-06

申请号：US17657262

申请日：2022-03-30

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Hisashi NISHIGAKI ,  Koji YOSHIMURA

IPC: H01J37/32 ,  C23C14/50 ,  C23C14/34 ,  C23C14/56 ,  C23C14/54

Abstract: According to one embodiment, a film formation apparatus that suppresses effects of pre-processing and enables stable film formation is provided. A film formation apparatus of the present disclosure includes a chamber that can be made vacuum, a transporter that is provided inside the chamber and that circulates and transports a workpiece in a trajectory of a circle, a film formation unit that forms film by sputtering on the workpiece circulated and transported by the transporter, a load-lock room that loads the workpiece into and out of the chamber relative to air space while keeping an interior of the chamber vacuum, and a pre-processing unit that is provided in the chamber at a position adjacent to the load-lock room and that performs pre-processing to the workpiece loaded in from the load-lock room in a state distant from the transporter.