公开(公告)号：US08614458B2

公开(公告)日：2013-12-24

申请号：US12090050

申请日：2006-11-28

Applicant: Yeo Jin Yoon ,  Won Cheol Seo

Inventor： Yeo Jin Yoon ,  Won Cheol Seo

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/005 ,  H01L33/22

Abstract: Disclosed herein are a patterned substrate for a light emitting diode and a light emitting diode employing the patterned substrate. The substrate has top and bottom surfaces. Protrusion patterns are arranged on the top surface of the substrate. Furthermore, recessed regions surround the protrusion patterns. The recessed regions have irregular bottoms. Thus, the protrusion patterns and the recessed regions can prevent light emitted from a light emitting diode from being lost due to the total reflection to thereby improve light extraction efficiency.

Abstract translation: 本文公开了用于发光二极管的图案化衬底和采用图案化衬底的发光二极管。 衬底具有顶表面和底表面。 突出图案布置在基板的顶表面上。 此外，凹陷区域围绕突起图案。 凹陷区域有不规则的底部。 因此，突起图案和凹陷区域可以防止由于全反射而从发光二极管发出的光损失，从而提高光提取效率。

公开(公告)号：US20130146929A1

公开(公告)日：2013-06-13

申请号：US13818267

申请日：2011-04-05

Applicant: Ye Seul Kim ,  Da Yeon Jeong ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh

Inventor： Ye Seul Kim ,  Da Yeon Jeong ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh

IPC: H01L33/60

CPC classification number: H01L33/46 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60

Abstract: Disclosed is a light emitting diode (LED) comprising a light emitting stacked structure and an electrode structure formed to have a pattern on the light emitting stacked structure. The electrode structure of the LED includes a cluster of reflectors disposed along the pattern on the light emitting stacked structure, and a pad material layer formed to entirely cover the reflectors.

公开(公告)号：US20130046001A1

公开(公告)日：2013-02-21

申请号：US13695809

申请日：2011-05-03

Applicant: Cheol Hyoung Park ,  Hye Kyung Min ,  In Suk Park ,  Mi Jung Lim ,  Ji Won Lee ,  Jin Yong Chung ,  Yeo Jin Yoon ,  Joo Young Park

Inventor： Cheol Hyoung Park ,  Hye Kyung Min ,  In Suk Park ,  Mi Jung Lim ,  Ji Won Lee ,  Jin Yong Chung ,  Yeo Jin Yoon ,  Joo Young Park

IPC: A61K31/42 ,  A61P25/16 ,  A61P25/24 ,  A61P25/18 ,  A61P25/08 ,  A61P9/10 ,  A61P25/28 ,  A61P25/00

CPC classification number: C07D261/08 ,  A61K31/4196 ,  A61K31/4245 ,  A61K31/433

Abstract: Provided is a pharmaceutical composition for inhibiting apoptosis of neurons or neurodegeneration. The pharmaceutical composition effectively prevents or treats diseases related to apoptosis of neurons or neurodegeneration.

Abstract translation: 提供了抑制神经元凋亡或神经变性的药物组合物。 药物组合物有效地预防或治疗与神经元凋亡相关的疾病或神经变性。

公开(公告)号：US20130009197A1

公开(公告)日：2013-01-10

申请号：US13617810

申请日：2012-09-14

Applicant: Won Cheol SEO ,  Dae Sung KAL ,  Kyung Hee YE ,  Kyoung Wan KIM ,  Yeo Jin YOON

Inventor： Won Cheol SEO ,  Dae Sung KAL ,  Kyung Hee YE ,  Kyoung Wan KIM ,  Yeo Jin YOON

IPC: H01L33/36

CPC classification number: H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Abstract translation: 本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层 垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电型半导体层。

公开(公告)号：US08049229B2

公开(公告)日：2011-11-01

申请号：US12173383

申请日：2008-07-15

Applicant: Yeo Jin Yoon

Inventor： Yeo Jin Yoon

IPC: H01L33/06

CPC classification number: H01L33/385 ,  H01L24/14 ,  H01L27/15 ,  H01L33/44 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2924/00014 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A light emitting diode includes a current leakage passage electrically connected in parallel to an active layer to better protect the light emitting diode from static electricity. The light emitting diode includes a substrate, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer, a p-type semiconductor layer on the active layer, a p-electrode on the p-type semiconductor layer, and an n-electrode formed from the n-type semiconductor layer, exposed by etching, to a portion of the p-type semiconductor layer.

Abstract translation: 发光二极管包括与有源层并联电连接的电流泄漏通道，以更好地保护发光二极管免受静电。 发光二极管包括衬底，衬底上的n型氮化物半导体层，n型氮化物半导体层上的有源层，有源层上的p型半导体层，p型p型半导体层， 型半导体层和由n型半导体层形成的n电极，通过蚀刻暴露于p型半导体层的一部分。

公开(公告)号：US20110195538A1

公开(公告)日：2011-08-11

申请号：US13089544

申请日：2011-04-19

Applicant: Jun Hee LEE ,  Jong Kyu KIM ,  Yeo Jin YOON

Inventor： Jun Hee LEE ,  Jong Kyu KIM ,  Yeo Jin YOON

IPC: H01L33/06

CPC classification number: H01L33/0095 ,  H01L33/20

Abstract: The present invention provides a method of fabricating a light emitting diode chip having an active layer between an N type semiconductor layer and a P type semiconductor layer. The method comprises the steps of preparing a substrate; laminating the semiconductor layers on the substrate, the semiconductor layers having the active layer between the N type semiconductor layer and the P type semiconductor layer; and forming grooves on the semiconductor layers laminated on the substrate until the substrate is exposed, whereby inclined sidewalls are formed by the grooves in the semiconductor layers divided into a plurality of chips. According to embodiments of the present invention, a sidewall of a semiconductor layer formed on a substrate of a light emitting diode chip is inclined with respect to the substrate, whereby its directional angle is widened as compared with a light emitting diode chip without such inclination. As the directional angle of the light emitting diode chip is wider, when a white light emitting device is fabricated using the light emitting diode chip and a phosphor, light uniformity can be adjusted even though the phosphor is not concentrated at the center of the device. Thus, the overall light emitting efficiency can be enhanced by reducing a light blocking phenomenon caused by the increased amount of the phosphor distributed at the center portion.

Abstract translation: 本发明提供一种制造在N型半导体层和P型半导体层之间具有有源层的发光二极管芯片的方法。 该方法包括以下步骤：制备基底; 在所述基板上层叠所述半导体层，所述半导体层具有在所述N型半导体层和所述P型半导体层之间的有源层; 以及在层叠在基板上的半导体层上形成凹槽，直到基板被暴露，由此通过划分成多个芯片的半导体层中的凹槽形成倾斜的侧壁。 根据本发明的实施例，形成在发光二极管芯片的基板上的半导体层的侧壁相对于基板倾斜，由此与没有倾斜的发光二极管芯片相比，其方向角度变宽。 随着发光二极管芯片的方位角变宽，当使用发光二极管芯片和荧光体制造白色发光器件时，即使荧光体不集中在器件的中心，也可以调整光均匀性。 因此，通过减少由分散在中心部分的荧光体的量增加引起的遮光现象，可以提高整体发光效率。

公开(公告)号：US07994523B2

公开(公告)日：2011-08-09

申请号：US12088999

申请日：2006-11-28

Applicant: Jae Ho Lee ,  Yeo Jin Yoon

Inventor： Jae Ho Lee ,  Yeo Jin Yoon

IPC: H01L33/00

CPC classification number: H01L27/153 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/48

Abstract: Disclosed is an AC light emitting diode having an improved transparent electrode structure. The light emitting diode comprises a plurality of light emitting cells formed on a single substrate, each of the light emitting cells having a first conductive type semiconductor layer, a second conductive type semiconductor layer positioned on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. A transparent electrode structure is positioned on each of the light emitting cells. The transparent electrode structure includes at least two portions separated from each other, or a center portion and branches laterally extending from both sides of the center portion. Meanwhile, wires electrically connect adjacent two of the light emitting cells. Accordingly, a plurality of light emitting cells are electrically connected, whereby a light emitting diode can be provided which can be driven under AC power source. Also, an improved transparent electrode structure is employed, so that the current density can be prevented from being locally increased.

Abstract translation: 公开了具有改进的透明电极结构的AC发光二极管。 发光二极管包括形成在单个基板上的多个发光单元，每个发光单元具有第一导电型半导体层，位于第一导电型半导体层的一个区域上的第二导电型半导体层，以及 插入在第一和第二导电类型半导体层之间的有源层。 透明电极结构位于每个发光单元上。 透明电极结构包括彼此分离的至少两个部分或中心部分，并且从中心部分的两侧侧向延伸。 同时，电线电连接相邻的两个发光单元。 因此，多个发光单体电连接，从而可以提供可在交流电源下驱动的发光二极管。 此外，采用改进的透明电极结构，从而可以防止电流密度局部增加。

公开(公告)号：US07977691B2

公开(公告)日：2011-07-12

申请号：US12630370

申请日：2009-12-03

Applicant: Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

Inventor： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

IPC: H01L27/15

CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

Abstract: The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention is provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.

Abstract translation: 本发明涉及一种发光器件及其制造方法。 根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面 或P型半导体层的水平面为20〜80°的斜率。 此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转 芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体 发光单元的层与水平面的倾斜度为20〜80°。 此外，本发明提供一种制造发光器件的方法。 因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。

公开(公告)号：US07951626B2

公开(公告)日：2011-05-31

申请号：US12613275

申请日：2009-11-05

Applicant: Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

Inventor： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

IPC: H01L27/15

CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

Abstract: The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.

Abstract translation: 本发明涉及一种发光器件及其制造方法。 根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面 或P型半导体层的水平面为20〜80°的斜率。 此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转 芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体 发光单元的层与水平面的倾斜度为20〜80°。 此外，本发明提供一种制造发光器件的方法。 因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。

公开(公告)号：US20110114990A1

公开(公告)日：2011-05-19

申请号：US12941536

申请日：2010-11-08

Applicant: Kyoung Wan KIM ,  Soo Young MOON ,  Kyu Ho LEE ,  Yeo Jin YOON ,  Jeong Hee YANG ,  Won Cheol SEO

Inventor： Kyoung Wan KIM ,  Soo Young MOON ,  Kyu Ho LEE ,  Yeo Jin YOON ,  Jeong Hee YANG ,  Won Cheol SEO

IPC: H01L33/62

CPC classification number: H01L33/38 ,  H01L33/20

Abstract: An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts.

Abstract translation: 本发明的一个示例性实施例公开了一种发光二极管，其包括具有彼此相对的第一边缘和第二边缘的基板，设置在基板上的发光结构，所述发光结构包括第一半导体层和第二半导体 布置在第一半导体层的上表面上的多个第一电极焊盘，布置在第一边缘附近的第一电极焊盘，布置在第二半导体层上的多个第二电极焊盘，布置在第二半导体层上的第二电极焊盘 在第二边缘附近，多个第一延伸部，每个第一延伸部从第一电极焊盘延伸，以及多个第二延伸部，每个第二延伸部从第二电极焊盘延伸。 第一延伸部包括在从第一边缘到第二边缘的方向上延伸的侵入部分，其中入侵部分彼此间隔开并且不与第二电极焊盘连接。 此外，第二延伸部包括在从第二边缘到第一边缘的方向上延伸的侵入部分，其中第一延伸入侵部分各自延伸到两个第二延伸入侵部分之间的区域中。