公开(公告)号：US20230056280A1

公开(公告)日：2023-02-23

申请号：US17974859

申请日：2022-10-27

Applicant: Applied Materials, Inc.

Inventor： Jialiang Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/285 ,  H01L23/532 ,  C23C16/26 ,  C01B32/184 ,  C23C16/455 ,  H01L21/02

Abstract: Exemplary methods of semiconductor processing may include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C. The methods may include halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor.

公开(公告)号：US11515163B2

公开(公告)日：2022-11-29

申请号：US17142626

申请日：2021-01-06

Applicant: Applied Materials, Inc.

Inventor： Jialiang Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/285 ,  H01L23/532 ,  C23C16/26 ,  C01B32/184 ,  C23C16/455 ,  H01L21/02

Abstract: Exemplary methods of semiconductor processing may include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C. The methods may include halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor.

公开(公告)号：US20220223409A1

公开(公告)日：2022-07-14

申请号：US17144972

申请日：2021-01-08

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/02

Abstract: Exemplary methods of semiconductor processing may include providing a boron-and-carbon-and-nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include generating a capacitively-coupled plasma of the boron-and-carbon-and-nitrogen-containing precursor. The methods may include forming a boron-and-carbon-and-nitrogen-containing layer on the substrate. The boron-and-carbon-and-nitrogen-containing layer may be characterized by a dielectric constant below or about 3.5.

公开(公告)号：US11004689B2

公开(公告)日：2021-05-11

申请号：US16435910

申请日：2019-06-10

Applicant: Applied Materials, Inc.

Inventor： Zihui Li ,  Rui Cheng ,  Anchuan Wang ,  Nitin K. Ingle ,  Abhijit Basu Mallick

IPC: H01L21/3065 ,  H01L21/311 ,  B81C1/00 ,  H01L21/3213 ,  H01J37/00 ,  H01L27/11582

Abstract: Exemplary methods for selectively removing silicon (e.g. polysilicon) from a patterned substrate may include flowing a fluorine-containing precursor into a substrate processing chamber to form plasma effluents. The plasma effluents may remove silicon (e.g. polysilicon, amorphous silicon or single crystal silicon) at significantly higher etch rates compared to exposed silicon oxide, silicon nitride or other dielectrics on the substrate. The methods rely on the temperature of the substrate in combination with some conductivity of the surface to catalyze the etch reaction rather than relying on a gas phase source of energy such as a plasma.

公开(公告)号：US20190311900A1

公开(公告)日：2019-10-10

申请号：US15949341

申请日：2018-04-10

Applicant: Applied Materials, Inc.

Inventor： Mandar B. Pandit ,  Mang-Mang Ling ,  Tom Choi ,  Nitin K. Ingle

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/67

Abstract: Methods may be performed to limit footing, pitch walking, and other alignment issues. The methods may include forming a treatment gas plasma within a processing region of a semiconductor processing chamber. The methods may further include directing effluents of the treatment gas plasma towards a semiconductor substrate within the processing region of the semiconductor processing chamber, and anisotropically modifying a surface of a first material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may also include passivating a surface of a second material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may further include forming a remote fluorine-containing plasma to produce fluorine-containing plasma effluents, and flowing the fluorine-containing plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include selectively removing the modified surface of the first material from the semiconductor substrate.

公开(公告)号：US20190272998A1

公开(公告)日：2019-09-05

申请号：US16416865

申请日：2019-05-20

Applicant: Applied Materials, Inc.

Inventor： Dongqing Yang ,  Tien Fak Tan ,  Peter Hillman ,  Lala Zhu ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Christopher Snedigar ,  Ming Xia

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3105

Abstract: Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.

公开(公告)号：US10249507B2

公开(公告)日：2019-04-02

申请号：US15496907

申请日：2017-04-25

Applicant: Applied Materials, Inc.

Inventor： Zihui Li ,  Xing Zhong ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/3213 ,  C30B33/12 ,  C09K13/06

Abstract: The present disclosure provides methods for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including chlorine containing gas to remove a silicon material disposed on a substrate.

公开(公告)号：US20190013211A1

公开(公告)日：2019-01-10

申请号：US15972434

申请日：2018-05-07

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Naomi Yoshida ,  Soumendra N. Barman ,  Nitin K. Ingle

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  H01L21/311

Abstract: Methods are described herein for etching tantalum-containing films with various potential additives while still retaining other desirable patterned substrate portions. The methods include exposing a tantalum-containing film to a chlorine-containing precursor (e.g. Cl2) with a concurrent plasma. The plasma-excited chlorine-containing precursor selectively etches the tantalum-containing film and other industrially-desirable additives. Chlorine is then removed from the substrate processing region. A hydrogen-containing precursor (e.g. H2) is delivered to the substrate processing region (also with plasma excitation) to produce a relatively even and residue-free tantalum-containing surface. The methods presented remove tantalum while retaining materials elsewhere on the patterned substrate.

公开(公告)号：US20180195179A1

公开(公告)日：2018-07-12

申请号：US15899234

申请日：2018-02-19

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Nitin K. Ingle ,  Srinivas D. Nemani ,  Jeffrey W. Anthis ,  Xikun Wang ,  Jie Liu ,  David Benjaminson

IPC: C23F1/12 ,  H01J37/32

CPC classification number: C23F1/12 ,  C23F4/00 ,  C30B33/12 ,  H01J37/32009 ,  H01J2237/334

Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.

公开(公告)号：US09966240B2

公开(公告)日：2018-05-08

申请号：US14514222

申请日：2014-10-14

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

IPC: H01J37/32 ,  G01J3/02 ,  C23C16/50 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01J37/32972 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/52 ,  G01J3/0218 ,  G01J3/443 ,  H01J37/32082 ,  H01J37/32532 ,  H01J37/3255

Abstract: In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.