公开(公告)号：US11332488B2

公开(公告)日：2022-05-17

申请号：US16996459

申请日：2020-08-18

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Atashi Basu ,  David Thompson ,  Nasrin Kazem

IPC: C07F15/06 ,  C23C16/455 ,  C23C16/18

Abstract: Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: where R1 and R4 are selected from the group consisting of C4-C10 alkyl groups; and R2 and R3 are each independently selected from the group consisting of H, C1-C6 alkyl, cycloalkyl, or aryl groups and the difference in the number of carbons in R2 and R3 is greater than or equal to 2. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US10790287B2

公开(公告)日：2020-09-29

申请号：US16204300

申请日：2018-11-29

Applicant: Applied Materials, Inc.

Inventor： Sung-Kwan Kang ,  Gill Yong Lee ,  Sang Ho Yu ,  Shih Chung Chen ,  Jeffrey W. Anthis

IPC: H01L27/108 ,  H01L29/49 ,  H01L29/423 ,  H01L21/28 ,  H01L21/321 ,  H01L21/02 ,  H01L21/3213

Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise two work-function metal layers, where one work-function layer has a lower work-function than the other work-function layer. The low work-function layer may reduce gate-induced drain leakage current losses. Methods of forming memory devices are also described.

公开(公告)号：US20200176451A1

公开(公告)日：2020-06-04

申请号：US16204300

申请日：2018-11-29

Applicant: Applied Materials, Inc.

Inventor： Sung-Kwan Kang ,  Gill Yong Lee ,  Sang Ho Yu ,  Shih Chung Chen ,  Jeffrey W. Anthis

IPC: H01L27/108 ,  H01L29/49 ,  H01L21/3213 ,  H01L29/423 ,  H01L21/28

Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise two work-function metal layers, where one work-function layer has a lower work-function than the other work-function layer. The low work-function layer may reduce gate-induced drain leakage current losses. Methods of forming memory devices are also described.

公开(公告)号：US20200063263A1

公开(公告)日：2020-02-27

申请号：US16549756

申请日：2019-08-23

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Wei V. Tang ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  David Thompson ,  Jacqueline S. Wrench ,  Naomi Yoshida

IPC: C23C16/455 ,  C23C16/18 ,  H01L21/285 ,  H01L23/532

Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

公开(公告)号：US20190385849A1

公开(公告)日：2019-12-19

申请号：US16522226

申请日：2019-07-25

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan ,  Yihong Chen ,  Kelvin Chan ,  Srinivas Gandikota

IPC: H01L21/033 ,  C23F1/00 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/321

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US10242885B2

公开(公告)日：2019-03-26

申请号：US15606461

申请日：2017-05-26

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson ,  Benjamin Schmiege

IPC: H01L21/302 ,  H01L21/465 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/28

Abstract: A process to selectively etch a substrate surface comprising multiple metal oxides comprising exposing the substrate surface to a halogenation agent, and then exposing the substrate surface to a ligand transfer agent. The etch rate of the metals in the multiple metal oxides is substantially uniform.

公开(公告)号：US20190080904A1

公开(公告)日：2019-03-14

申请号：US16129223

申请日：2018-09-12

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Chang Ke ,  Pratham Jain ,  Benjamin Schmiege ,  Guoqiang Jian ,  Michael S. Jackson ,  Lei Zhou ,  Paul F. Ma ,  Liqi Wu

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/033

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.

公开(公告)号：US20190078203A1

公开(公告)日：2019-03-14

申请号：US16129232

申请日：2018-09-12

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/42 ,  C23C16/52 ,  C23C16/455 ,  C23C16/513

Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

公开(公告)号：US20180366322A1

公开(公告)日：2018-12-20

申请号：US16013884

申请日：2018-06-20

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455

Abstract: Methods of forming a lanthanide-containing film comprising exposing a substrate surface to a lanthanide-containing precursor, a metal halide and a nitrogen precursor are described. The lanthanide-containing precursor has the general formula (CpRx)2Ln(N,N-dialkylamidinate) where Cp is a cyclopentadienyl or 6, 7 or 8 membered ring, R is H, C1-C4 alkyl, x=1 to number of C in Cp, alkyl is C1 to C4 alkyl. The metal halide deposits metal halide on the substrate surface and reacts with lanthanide-containing species to convert the lanthanide-containing species to a lanthanide halide. The nitrogen-containing precursor forms a lanthanide-metal-nitride film on the substrate surface.

公开(公告)号：US10096514B2

公开(公告)日：2018-10-09

申请号：US15658846

申请日：2017-07-25

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson

IPC: H01L21/311 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532

Abstract: Methods for filing a feature on a substrate surface comprising depositing a conformal nitride film on the substrate surface and at least one feature on the surface, oxidizing a portion of the nitride film to form an asymmetric oxide film on top of the nitride film and etching the oxide film from the nitride film to leave a v-shaped nitride film in the at least one feature.